A. Farcy

2.3k citations
102 papers · 944 · h-index 17

Impact in

  • Electrical and Electronic Engineering top 5%
    • Semiconductor materials and devices
    • 3D IC and TSV technologies
    • Electronic Packaging and Soldering Technologies
    • Advancements in Semiconductor Devices and Circuit Design
    • Integrated Circuits and Semiconductor Failure Analysis
    • Ferroelectric and Negative Capacitance Devices
  • Electronic, Optical and Magnetic Materials top 10%
    • Copper Interconnects and Reliability

Papers in

  • Electrical and Electronic Engineering 100
    • 3D IC and TSV technologies 61
    • Semiconductor materials and devices 51
    • Electronic Packaging and Soldering Technologies 26
    • Electromagnetic Compatibility and Noise Suppression 14
    • Advancements in Semiconductor Devices and Circuit Design 11
    • Ferroelectric and Negative Capacitance Devices 7
  • Electronic, Optical and Magnetic Materials 46
    • Copper Interconnects and Reliability 46
Co-authors
J. Torrès (36 shared papers)F. Bœuf (4 shared papers)T. Skotnicki (3 shared papers)B. Fléchet (34 shared papers)S. Chéramy (17 shared papers)C. Bermond (29 shared papers)T. Lacrevaz (24 shared papers)N. Sillon (11 shared papers)
Journals
Microelectronic Engineering (26 papers)IEEE Transactions on Components Packaging and Manufacturing Technology (3 papers)IEEE Transactions on Electron Devices (2 papers)Solid-State Electronics (1 paper)Measurement Science and Technology (1 paper)
Partner nations
FranceSwitzerlandIndia

In The Last Decade

A. Farcy

100 papers receiving 907 citations

Peers

A. Farcy
Comparison fields: 5 of 46
  • Electrical and Electronic Engineering 840
  • Electronic, Optical and Magnetic Materials 200
  • Hardware and Architecture 57
  • Automotive Engineering 57
  • Structural Biology 5
Replace L.W. Schaper with:
L.W. Schaper United States
Ritwik Chatterjee United States
Victor Moroz United States
Armin Klumpp Germany
Wai Tung Ng Canada
N. Sillon France
C.W. Surovic United States
M. Kobrinsky United States
A. Mercha Belgium
J. Maiz United States
A. Farcy relative to L.W. Schaper United States L.W. Schaper's profile →
Citations per field
00.5×2×4×6.2×
L.W. Schaper · 1×
Citations per year

Countries citing papers authored by A. Farcy

Since Specialization
Citations

This map shows the geographic impact of A. Farcy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Farcy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Farcy more than expected).

Fields of papers citing papers by A. Farcy

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Farcy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Farcy. The network helps show where A. Farcy may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Farcy, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Farcy Line = papers co-authored together A. Farcy links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 102 papers — load more, or switch the sort, to bring in the rest.

#Work
1
Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia
IEEE Transactions on Electron Devices ·T. Skotnicki, C. Fenouillet-Béranger, C. Gallon, F. Bœuf, S. Monfray, F. Payet, A. Pouydebasque, M. Szczap, A. Farcy, F. Arnaud, Sylvain Clerc, Manuel Sellier, Augustin Cathignol, Jean-Pierre Schoellkopf, Ernesto Perea, Richard Ferrant, H. Mingam
2008159
2
Investigation on TSV impact on 65nm CMOS devices and circuits
H. Chaabouni, Maxime Rousseau, Philip R. LeDuc, A. Farcy, R. El Farhane, Aurélie Thuaire, G. Haury, Alexandre Valentian, G. Billiot, M. Assous, F. de Crécy, J. Cluzel, A. Toffoli, D. Bouchu, L. Cadix, T. Lacrevaz, P. Ancey, N. Sillon, B. Fléchet
201041
3
EUROSERVER: Energy Efficient Node for European Micro-Servers
Research Explorer (The University of Manchester) ·Yves Durand, Paul Carpenter, Stefano Adami, Angelos Bilas, Denis Dutoit, A. Farcy, Georgi Gaydadjiev, John Goodacre, Manolis Katevenis, Manolis Marazakis, Emil Matúš, Iakovos Mavroidis, John Thomson
201432
4
1μm Pitch direct hybrid bonding with <300nm wafer-to-wafer overlay accuracy
HAL (Le Centre pour la Communication Scientifique Directe) ·A. Jouve, V. Balan, N. Bresson, Catherine Euvrard-Colnat, Frank Fournel, Y. Exbrayat, Gaëlle Mauguen, Monica Säter, C. Beitia, L. Arnaud, S. Chéramy, S. Lhostis, A. Farcy, S. Guillaumet, Sébastien Mermoz
201730
5
On the non-intrusive evaluation of fluid forces with the momentum equation approach
Measurement Science and Technology ·Laurent David, Thierry Jardin, A. Farcy
200928
6
Development and characterisation of a 3D technology including TSV and Cu pillars for high frequency applications
Jean Charbonnier, R. Hida, David Henry, S. Chéramy, P. Chausse, M. Neyret, O. Hajji, G. Garnier, C. Brunet-Manquat, Paul‐Henri Haumesser, L. Vandroux, R. Anciant, N. Sillon, A. Farcy, Maxime Rousseau, J. Cuzzocrea, G. Druais, E. Saugier
201026
7
Advanced Cu interconnects using air gaps
Microelectronic Engineering ·L.G. Gosset, A. Farcy, J. de Pontcharra, Ph. Lyan, R. Daamen, G.J.A.M. Verheijden, V. Arnal, F. Gaillard, D. Bouchu, P.H.L. Bancken, T. Vandeweyer, J. Michelon, V. Nguyen Hoang, R.J.O.M. Hoofman, J. Torrès
200524
8
First integration of Cu TSV using die-to-wafer direct bonding and planarization
Patrick Leduc, M. Assous, L. Di Cioccio, Marc Zussy, Thomas Signamarcheix, (unknown), Maxime Rousseau, S. Verrun, Laurent Bally, D. Bouchu, L. Cadix, A. Farcy, N. Sillon
200920
9
An Evaluation of the CMOS Technology Roadmap From the Point of View of Variability, Interconnects, and Power Dissipation
IEEE Transactions on Electron Devices ·F. Bœuf, Manuel Sellier, A. Farcy, T. Skotnicki
200820
10
Impact of patterning and ashing on electrical properties and reliability of interconnects in a porous SiOCH ultra low-k dielectric material
Microelectronic Engineering ·M. Aimadeddine, V. Arnal, A. Farcy, C. Guedj, T. Chevolleau, N. Possémé, (unknown), M. Assous, O. Louveau, F. Volpi, Jose Luis Chavez Torres
200520
11
RF characterization and modelling of high density Through Silicon Vias for 3D chip stacking
Microelectronic Engineering ·L. Cadix, C. Bermond, C. Fuchs, A. Farcy, Philip R. LeDuc, L. DiCioccio, M. Assous, Maxime Rousseau, F. Lorut, Laurent Chapelon, B. Fléchet, N. Sillon, P. Ancey
200919
12
Electrical Characterization of Advanced MIM Capacitors With ${\rm ZrO}_{2}$ Insulator for High-Density Packaging and RF Applications
IEEE Transactions on Components Packaging and Manufacturing Technology ·T. Bertaud, C. Bermond, S. Blonkowski, C. Vallée, Thierry Lacrevaz, A. Farcy, M. Gros‐Jean, Bernard Flechet
201218
13
Characterization of Fine Pitch Hybrid Bonding Pads using Electrical Misalignment Test Vehicle
HAL (Le Centre pour la Communication Scientifique Directe) ·Imed Jani, Didier Lattard, Pascal Vivet, Lucile Arnaud, S. Chéramy, Édith Beigné, A. Farcy, J. Jourdon, Y. Henrion, E. Deloffre, Halim Bilgen
201917
14
Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
Microelectronic Engineering ·T. Bertaud, C. Bermond, T. Lacrevaz, C. Vallée, Y. Morand, B. Fléchet, A. Farcy, M. Gros‐Jean, S. Blonkowski
200917
15
Integration of high-performance RF passive modules (MIM capacitors and inductors) in advanced BEOL
Microelectronic Engineering ·A. Farcy, J.F. Carpentier, M. Thomas, J. Torrès, P. Ancey
200816
16
Fine pitch 3D interconnections with hybrid bonding technology: From process robustness to reliability
L. Arnaud, S. Moreau, A. Jouve, Imed Jani, Didier Lattard, Frank Fournel, C. Euvrard, Y. Exbrayat, V. Balan, N. Bresson, S. Lhostis, J. Jourdon, E. Deloffre, S. Guillaumet, A. Farcy, Simon Gousseau, M. Arnoux
201816
17
Evaluation of a PECVD advanced barrier (k=3.7) for 32nm CMOS technology and below
Microelectronic Engineering ·L.L. Chapelon, E. Petitprez, P. Brun, A. Farcy, J. Torrès
200716
18
A new damascene architecture for high-performance metal–insulator–metal capacitors integration
Microelectronic Engineering ·A. Farcy, J. Torrès, V. Arnal, M. Fayolle, H. Feldis, Fabrice Jourdan, M. Assous, J.L. Di Maria, V. Vidal
200315
19
Development and characterisation of high electrical performances TSV for 3D applications
David Henry, S. Chéramy, Jean Charbonnier, P. Chausse, M. Neyret, G. Garnier, C. Brunet-Manquat, S. Verrun, N. Sillon, L. Bonnot, A. Farcy, L. Cadix, Maxime Rousseau, E. Saugier
200915
20
Sidewall restoration of porous ultra low-k dielectrics for sub-45nm technology nodes
Microelectronic Engineering ·H. Chaabouni, L.L. Chapelon, M. Aimadeddine, J. Vitiello, A. Farcy, R. Delsol, P. Brun, Davide Fossati, V. Arnal, T. Chevolleau, O. Joubert, J. Torrès
200715

About A. Farcy

A. Farcy is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Automotive Engineering, Biomedical Engineering and Materials Chemistry, having authored 102 papers that have together received 944 indexed citations. Recurring topics across this work include 3D IC and TSV technologies (61 papers), Semiconductor materials and devices (51 papers), Copper Interconnects and Reliability (46 papers), Electronic Packaging and Soldering Technologies (26 papers), Electromagnetic Compatibility and Noise Suppression (14 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), Additive Manufacturing and 3D Printing Technologies (9 papers) and Ferroelectric and Negative Capacitance Devices (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (840 citations), Electronic, Optical and Magnetic Materials (200 citations), Hardware and Architecture (57 citations), Automotive Engineering (57 citations) and Structural Biology (5 citations). A. Farcy has collaborated with scholars based in France, Switzerland and India. Frequent co-authors include J. Torrès, F. Bœuf, T. Skotnicki, B. Fléchet, S. Chéramy, C. Bermond, T. Lacrevaz, N. Sillon, M. Assous and P. Ancey. Their work appears in journals such as Microelectronic Engineering, IEEE Transactions on Components Packaging and Manufacturing Technology, IEEE Transactions on Electron Devices, Solid-State Electronics and Measurement Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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