Y. Morand

1.4k citations

72 papers · 744 · h-index 16

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability

Papers in

Electrical and Electronic Engineering 72
- Semiconductor materials and devices 55
- Advancements in Semiconductor Devices and Circuit Design 31
- Integrated Circuits and Semiconductor Failure Analysis 20
- Silicon and Solar Cell Technologies 10
- Ferroelectric and Negative Capacitance Devices 7
Atomic and Molecular Physics, and Optics 17
- Semiconductor materials and interfaces 14

Co-authors: Benjamin Vincent (9 shared papers)L. Clavelier (10 shared papers)C. Vizioz (7 shared papers)J.-F. Damlencourt (6 shared papers)S. Deleonibus (10 shared papers)T. Poiroux (6 shared papers)D. Lafond (7 shared papers)M. Vinet (11 shared papers)
Journals: Microelectronic Engineering (8 papers)Solid-State Electronics (4 papers)Microelectronics Reliability (3 papers)Semiconductor Science and Technology (2 papers)IEEE Electron Device Letters (2 papers)
Partner nations: France Czechia Switzerland

In The Last Decade

Y. Morand

67 papers receiving 708 citations

Peers

Countries citing papers authored by Y. Morand

Since Specialization

Citations

This map shows the geographic impact of Y. Morand's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Morand with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Morand more than expected).

Fields of papers citing papers by Y. Morand

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Morand. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Morand. The network helps show where Y. Morand may publish in the future.

Co-authors

The 25 scholars most cited alongside Y. Morand, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Y. Morand Line = papers co-authored together Y. Morand links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 72 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Bonded planar double-metal-gate NMOS transistors down to 10 nm IEEE Electron Device Letters ·M. Vinet, T. Poiroux, J. Widiez, J. Lolivier, B. Prévitali, C. Vizioz, B. Guillaumot, Y. Le Tiec, P. Besson, B. Biasse, F. Allain, M. Cassé, D. Lafond, J. M. Hartmann, Y. Morand, Julien Chiaroni, S. Deleonibus	2005	98
2	High quality Germanium-On-Insulator wafers with excellent hole mobility Solid-State Electronics ·Quang Trung Nguyen, J.F. Damlencourt, Benjamin Vincent, L. Clavelier, Y. Morand, Paulo Gentil, S. Cristoloveanu	2007	45
3	Copper metallization for advanced IC: requirements and technological solutions Microelectronic Engineering ·Y. Morand	2000	44
4	50 nm-Gate All Around (GAA)-Silicon On Nothing (SON)-devices: a simple way to co-integration of GAA transistors within bulk MOSFET process S. Monfray, T. Skotnicki, Y. Morand, S. Descombes, P. Coronel, P. Mazoyer, S. Harrison, P. Ribot, A. Talbot, D. Dutartre, M. Haond, R. Palla, Y. Le Friec, F. Leverd, M.E. Nier, C. Vizioz, D. Louis	2003	39
5	Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique Applied Physics Letters ·Benjamin Vincent, J.-F. Damlencourt, V. Delaye, R. Gassilloud, L. Clavelier, Y. Morand	2007	35
6	First 80 nm SON (Silicon-On-Nothing) MOSFETs with perfect morphology and high electrical performance S. Monfray, T. Skotnicki, Y. Morand, S. Descombes, M. Paoli, P. Ribot, A. Talbot, D. Dutartre, F. Leverd, Y. Le-Friec, R. Pantel, M. Haond, D. Renaud, M.E. Nier, C. Vizioz, D. Louis	2002	35
7	Emerging silicon-on-nothing (SON) devices technology Solid-State Electronics ·S. Monfray, T. Skotnicki, C. Fenouillet-Béranger, N. Carriere, D. Chanemougame, Y. Morand, S. Descombes, A. Talbot, D. Dutartre, C. Jenny, P. Mazoyer, R. Palla, F. Leverd, Y. Le Friec, R. Pantel, S. Borel, D. Louis, N. Buffet	2004	34
8	Fabrication of SiGe-on-insulator substrates by a condensation technique: an experimental and modelling study Semiconductor Science and Technology ·Benjamin Vincent, J.-F. Damlencourt, P. Rivallin, E. Nolot, Christophe Licitra, Y. Morand, L. Clavelier	2007	33
9	TiN-CVD process optimization for integration with Cu-CVD Microelectronic Engineering ·P. Motte, M. Proust, J. Torrès, Y. Gobil, Y. Morand, J. Palleau, R. Pantel, M. Juhel	2000	25
10	Electromigration failure modes in damascene copper interconnects Microelectronics Reliability ·L. Arnaud, R. Gonella, G. Tartavel, J. Torrès, C. Gounelle, Y. Gobil, Y. Morand	1998	23
11	55nm high mobility SiGe(:C) pMOSFETs with HfO/sub 2/ gate dielectric and TiN metal gate for advanced CMOS O. Weber, F. Ducroquet, T. Ernst, F. Andrieu, J.-F. Damlencourt, Jean‐Michel Hartmann, B. Guillaumot, A.-M. Papon, H. Dansas, L. Brévard, A. Toffoli, P. Besson, F. Martín, Y. Morand, S. Deleonibus	2004	23
12	W CMP process integration: Consumables evaluation — electrical results and end point detection Microelectronic Engineering ·M. Fayolle, Emmanuel Sicurani, Y. Morand	1997	19
13	The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies? Materials Science in Semiconductor Processing ·Benjamin Vincent, J.-F. Damlencourt, Y. Morand, A. Pouydebasque, C. Le Royer, L. Clavelier, N. Dechoux, P. Rivallin, T. T. T. Nguyên, S. Cristoloveanu, Y. Campidelli, D. Rouchon, Michel Mermoux, S. Deleonibus, D. Bensahel, T. Billon	2008	19
14	SON (Silicon-On-Nothing) P-MOSFETs with totally silicided (CoSi/sub 2/) polysilicon on 5 nm-thick Si-films: the simplest way to integration of metal gates on thin FD channels S. Monfray, T. Skotnicki, B. Tavel, Y. Morand, S. Descombes, A. Talbot, D. Dutartre, C. Jenny, P. Mazoyer, R. Palla, F. Leverd, Y. Le Friec, R. Pantel, M. Haond, C. Charbuillet, C. Vizioz, D. Louis, N. Buffet	2003	18
15	SON (silicon-on-nothing) technological CMOS platform: highly performant devices and SRAM cells S. Monfray, D. Chanemougame, S. Borel, A. Talbot, F. Loverd, N. Planes, D. Delille, D. Dutartre, R. Palla, Y. Morand, S. Descombes, Marie-Pierre Samson, Nathalie Vulliet, T. Sparks, A. Vandooren, T. Skotnicki	2005	17
16	Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors Microelectronic Engineering ·T. Bertaud, C. Bermond, T. Lacrevaz, C. Vallée, Y. Morand, B. Fléchet, A. Farcy, M. Gros‐Jean, S. Blonkowski	2009	17
17	Dual metallic source and drain integration on planar Single and Double Gate SOI CMOS down to 20nm: Performance and scalability assessment Louis Hutin, M. Vinet, T. Poiroux, C. Le Royer, B. Prévitali, C. Vizioz, D. Lafond, Y. Morand, M. Rivoire, F. Nemouchi, V. Carron, T. Billon, S. Deleonibus, O. Faynot	2009	14
18	Dielectric etching for 0.18 μm technologies Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·P. Berruyer, F. Vinet, H. Feldis, R. Blanc, M. Lerme, Y. Morand, T. Poiroux	1998	12
19	Ultrathin (5nm) SiGe-On-Insulator with high compressive strain (−2GPa): From fabrication (Ge enrichment process) to in-depth characterizations Solid-State Electronics ·F. Glowacki, C. Le Royer, Y. Morand, Jean-Michel Pedini, Thibaud Denneulin, David Cooper, Jean‐Paul Barnes, P. Nguyen, D. Rouchon, Jean‐Michel Hartmann, Olivier Gourhant, E. Baylac, Y. Campidelli, D. Barge, Olivier Bonnin, W. Schwarzenbach	2014	12
20	Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- $\kappa$ Dielectrics, and Metallic Source/Drain IEEE Electron Device Letters ·M. Vinet, T. Poiroux, Christophe Licitra, J. Widiez, Jyotshna Bhandari, B. Prévitali, C. Vizioz, D. Lafond, C. Arvet, P. Besson, L. Baud, Y. Morand, M. Rivoire, F. Nemouchi, V. Carron, S. Deleonibus	2009	10

About Y. Morand

Y. Morand is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Biomedical Engineering and Materials Chemistry, having authored 72 papers that have together received 744 indexed citations. Recurring topics across this work include Semiconductor materials and devices (55 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers), Integrated Circuits and Semiconductor Failure Analysis (20 papers), Copper Interconnects and Reliability (17 papers), Semiconductor materials and interfaces (14 papers), Silicon and Solar Cell Technologies (10 papers), Ferroelectric and Negative Capacitance Devices (7 papers) and Nanowire Synthesis and Applications (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (693 citations), Electronic, Optical and Magnetic Materials (95 citations), Biomedical Engineering (192 citations), Atomic and Molecular Physics, and Optics (106 citations) and Materials Chemistry (104 citations). Y. Morand has collaborated with scholars based in France, Czechia and Switzerland. Frequent co-authors include Benjamin Vincent, L. Clavelier, C. Vizioz, J.-F. Damlencourt, S. Deleonibus, T. Poiroux, D. Lafond, M. Vinet, S. Monfray and R. Pantel. Their work appears in journals such as Microelectronic Engineering, Solid-State Electronics, Microelectronics Reliability, Semiconductor Science and Technology and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Y. Morand

Impact in

Papers in i

In The Last Decade

Y. Morand

Peers

Countries citing papers authored by Y. Morand

Fields of papers citing papers by Y. Morand

All Works

About Y. Morand

Explore authors with similar magnitude of impact

Papers in