Jérôme Mitard

5.7k citations

294 papers · 4.7k · 1 hit paper · h-index 32

Impact in

Electrical and Electronic Engineering top 0.5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Thin-Film Transistor Technologies
- Advanced Memory and Neural Computing
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 290
- Semiconductor materials and devices 265
- Advancements in Semiconductor Devices and Circuit Design 256
- Integrated Circuits and Semiconductor Failure Analysis 83
- Ferroelectric and Negative Capacitance Devices 34
- Thin-Film Transistor Technologies 30
- Silicon and Solar Cell Technologies 13
Atomic and Molecular Physics, and Optics 41
- Semiconductor materials and interfaces 26

Co-authors: Liesbeth Johanna Witters (74 shared papers)Geert Eneman (67 shared papers)G. Ghibaudo (12 shared papers)Ben Kaczer (36 shared papers)Jacopo Franco (38 shared papers)G. Groeseneken (39 shared papers)Emmanuel Vincent (1 shared paper)Frederic Monsieur (1 shared paper)
Journals: IEEE Transactions on Electron Devices (28 papers)IEEE Transactions on Nuclear Science (17 papers)Microelectronic Engineering (7 papers)IEEE Transactions on Device and Materials Reliability (7 papers)Solid-State Electronics (6 papers)
Partner nations: Belgium United States France

In The Last Decade

Jérôme Mitard

275 papers receiving 4.6k citations

Jérôme Mitard's Hit Papers

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Review on high-k dielectrics reliability issues 2005 · 433 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2005 IEEE Transactions on Device and Materials Reliability

Peers

Countries citing papers authored by Jérôme Mitard

Since Specialization

Citations

This map shows the geographic impact of Jérôme Mitard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jérôme Mitard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jérôme Mitard more than expected).

Fields of papers citing papers by Jérôme Mitard

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jérôme Mitard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jérôme Mitard. The network helps show where Jérôme Mitard may publish in the future.

Co-authors

The 25 scholars most cited alongside Jérôme Mitard, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Jérôme Mitard Line = papers co-authored together Jérôme Mitard links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 294 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Review on high-k dielectrics reliability issues IEEE Transactions on Device and Materials Reliability ·G. Ribes, Jérôme Mitard, M. Denais, Sylvie Bruyere, Frederic Monsieur, C. Parthasarathy, Emmanuel Vincent, G. Ghibaudo Hit paper breakdown →	2005	433
2	Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance Journal of The Electrochemical Society ·D.P. Brunco, Brice De Jaeger, Geert Eneman, Jérôme Mitard, Geert Hellings, Alessandra Satta, V. Terzieva, Laurent Souriau	2008	232
3	Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM Attilio Belmonte, Hyungrock Oh, Nouredine Rassoul, Gabriele Luca Donadio, Jérôme Mitard, Hendrik F. W. Dekkers, Romain Delhougne, Subhali Subhechha	2020	157
4	Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters IEEE Transactions on Electron Devices ·Mikaël Cassé, L. Thévenod, Bernard Guillaumot, Lucie Tosti, François Martin, Jérôme Mitard, O. Weber, F. Andrieu	2006	109
5	Characterization and modeling of hysteresis phenomena in high K dielectrics Charles R. Leroux, Jérôme Mitard, G. Ghibaud, X. Garros, G. Reimbold, Bernard Guillaumot, François Martin	2005	91
6	SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices—Part I: NBTI IEEE Transactions on Electron Devices ·Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Jérôme Mitard, Moonju Cho, Liesbeth Johanna Witters, Tibor Grasser, G. Groeseneken	2012	90
7	Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors with Reduced Vertical Nanowires Separation, New Work Function Metal Gate Solutions, and DC/AC Performance Optimization R. Ritzenthaler, Hans W. Mertens, V. Peña, G. Santoro, Adrian Vaisman Chasin, Karine Kenis, Katia Devriendt, Geert Mannaert	2018	86
8	Electrical TCAD Simulations of a Germanium pMOSFET Technology IEEE Transactions on Electron Devices ·Geert Hellings, Geert Eneman, Raymond Krom, Brice De Jaeger, Jérôme Mitard, A. De Keersgieter, Thomas Hoffmann, Marc Meuris	2010	84
9	Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs Jacopo Franco, Ben Kaczer, M. Toledano-Luque, Ph. J. Roussel, Jérôme Mitard, Lars-Åke Ragnarsson, Liesbeth Johanna Witters, Thomas M. Chiarella	2012	84
10	An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates Niamh Waldron, Clément Merckling, Weiming Guo, Patrick Ong, Lieve G. Teugels, Sheikh Ansar, Diana Tsvetanova, Farid Sebaai	2014	77
11	Challenges and opportunities in advanced Ge pMOSFETs Materials Science in Semiconductor Processing ·Eddy Roger Simoen, Jérôme Mitard, Geert Hellings, Geert Eneman, Brice De Jaeger, Liesbeth Johanna Witters, Benjamin Vincent, Roger Loo	2012	73
12	Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects IEEE Transactions on Device and Materials Reliability ·Eddy Roger Simoen, Dennis Han-Chung Lin, AliReza Alian, Guy Brammertz, Clément Merckling, Jérôme Mitard, Cor L. Claeys	2013	70
13	Geometry Dependence of Total-Dose Effects in Bulk FinFETs IEEE Transactions on Nuclear Science ·Indranil Chatterjee, En Xia Zhang, Bharat L. Bhuva, Robert A. Reed, Michael L. Alles, Nihaar N. Mahatme, Dennis R. Ball, Ronald Schrimpf	2014	66
14	Understanding and modelling the PBTI reliability of thin-film IGZO transistors Adrian Vaisman Chasin, Jacopo Franco, K. Triantopoulos, Hendrik F. W. Dekkers, Nouredine Rassoul, Attilio Belmonte, Quentin Smets, Subhali Subhechha	2021	56
15	First Demonstration of Vertically Stacked Gate-All-Around Highly Strained Germanium Nanowire pFETs IEEE Transactions on Electron Devices ·Elena Capogreco, Liesbeth Johanna Witters, Hiroaki Arimura, Farid Sebaai, Clément Porret, Andriy Yakovitch Hikavyy, Roger Loo, Alexey P. Milenin	2018	55
16	Advancing CMOS beyond the Si roadmap with Ge and III/V devices Marc Heyns, AliReza Alian, Guy Brammertz, Matty R. Caymax, Y. C. Chang, L. K. Chu, Brice De Jaeger, Geert Eneman	2011	54
17	Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution Document Server@UHasselt (UHasselt) ·Dennis Han-Chung Lin, Guy Brammertz, Sonja Sioncke, Claudia Fleischmann, Annelies Delabie, Koen M. Martens, Hugo Bender, Thierry S. Conard	2009	49
18	Germanium for advanced CMOS anno 2009: a SWOT analysis Matty R. Caymax, Geert Eneman, Florence Bellenger, Clément Merckling, Annelies Delabie, G. Wang, Roger Loo, Eddy Roger Simoen	2009	49
19	Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition IEEE Transactions on Electron Devices ·Liesbeth Johanna Witters, Hiroaki Arimura, Farid Sebaai, Andriy Yakovitch Hikavyy, Alexey P. Milenin, Roger Loo, A. De Keersgieter, Geert Eneman	2017	47
20	Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability Jérôme Mitard, Brice De Jaeger, Frederik E. Leys, Geert Hellings, Koen M. Martens, Geert Eneman, D.P. Brunco, Roger Loo	2008	47

About Jérôme Mitard

Jérôme Mitard is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electronic, Optical and Magnetic Materials and Hardware and Architecture, having authored 294 papers that have together received 4.7k indexed citations. Recurring topics across this work include Semiconductor materials and devices (265 papers), Advancements in Semiconductor Devices and Circuit Design (256 papers), Integrated Circuits and Semiconductor Failure Analysis (83 papers), Nanowire Synthesis and Applications (44 papers), Ferroelectric and Negative Capacitance Devices (34 papers), Thin-Film Transistor Technologies (30 papers), Semiconductor materials and interfaces (26 papers) and Silicon and Solar Cell Technologies (13 papers). The work is most often cited by research in Electrical and Electronic Engineering (4.5k citations), Atomic and Molecular Physics, and Optics (618 citations), Biomedical Engineering (831 citations), Materials Chemistry (568 citations) and Structural Biology (17 citations). Jérôme Mitard has collaborated with scholars based in Belgium, United States and France. Frequent co-authors include Liesbeth Johanna Witters, Geert Eneman, G. Ghibaudo, Ben Kaczer, Jacopo Franco, G. Groeseneken, Emmanuel Vincent, Frederic Monsieur, G. Ribes and C. Parthasarathy. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Transactions on Nuclear Science, Microelectronic Engineering, IEEE Transactions on Device and Materials Reliability and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Jérôme Mitard's Hit Papers

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