A. Alian

1.4k citations

88 papers · 1.0k · h-index 18

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices

Papers in

Electrical and Electronic Engineering 78
- Semiconductor materials and devices 58
- Advancements in Semiconductor Devices and Circuit Design 42
- Radio Frequency Integrated Circuit Design 17
- Ferroelectric and Negative Capacitance Devices 11
- Integrated Circuits and Semiconductor Failure Analysis 9
Condensed Matter Physics 38
- GaN-based semiconductor devices and materials 38

Co-authors: Nadine Collaert (74 shared papers)Dennis Lin (18 shared papers)Guy Brammertz (7 shared papers)Matty Caymax (6 shared papers)Clément Merckling (14 shared papers)Aaron Thean (16 shared papers)Bertrand Parvais (38 shared papers)Uthayasankaran Peralagu (36 shared papers)
Journals: IEEE Transactions on Electron Devices (9 papers)Applied Physics Letters (4 papers)IEEE Electron Device Letters (3 papers)Semiconductor Science and Technology (3 papers)Journal of Applied Physics (2 papers)
Partner nations: Belgium United States Taiwan

In The Last Decade

A. Alian

82 papers receiving 987 citations

Peers

Countries citing papers authored by A. Alian

Since Specialization

Citations

This map shows the geographic impact of A. Alian's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Alian with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Alian more than expected).

Fields of papers citing papers by A. Alian

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Alian. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Alian. The network helps show where A. Alian may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Alian, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Alian Line = papers co-authored together A. Alian links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 88 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ and InP Capacitors IEEE Transactions on Electron Devices ·Guy Brammertz, A. Alian, Dennis Lin, Marc Meuris, Matty Caymax, Wei Wang	2011	91
2	Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects IEEE Transactions on Device and Materials Reliability ·Eddy Simoen, Dennis Lin, A. Alian, Guy Brammertz, Clément Merckling, Jérôme Mitard, Cor Claeys	2013	69
3	CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance VUBIR (Vrije Universiteit Brussel) ·Uthayasankaran Peralagu, A. Alian, V. Putcha, Ahmad Khaled, R. Rodríguez, A. Sibaja-Hernandez, Shu-Chiuan Chang, Eddy Simoen, Simeng E. Zhao, Brice De Jaeger, Daniel M. Fleetwood, Piet Wambacq, Ming Zhao, Bertrand Parvais, Niamh Waldron, Nadine Collaert	2019	64
4	Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics Applied Physics Letters ·Li‐Kang Chu, Clément Merckling, A. Alian, J. Dekoster, J. Kwo, M. Hong, Matty Caymax, Marc Heyns	2011	46
5	An Investigation on Border Traps in III–V MOSFETs With an In_0.53Ga_0.47As Channel IEEE Transactions on Electron Devices ·Zhigang Ji, Xiong Zhang, J. Franco, Rui Gao, (unknown), J. F. Zhang, Weidong Zhang, B. Kaczer, A. Alian, Dimitri Linten, Daisy Zhou, Nadine Collaert, Stefan De Gendt, G. Groeseneken	2015	40
6	Impact of the channel thickness on the performance of ultrathin InGaAs channel MOSFET devices A. Alian, Mohammad Ali Pourghaderi, Yves Mols, Mirco Cantoro, Tsvetan Ivanov, Nadine Collaert, Aaron Thean	2013	36
7	RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs J. Franco, B. Kaczer, Niamh Waldron, Ph. Roussel, A. Alian, Mohammad Ali Pourghaderi, Zhigang Ji, Tibor Grasser, T. Kauerauf, Sonja Sioncke, Nadine Collaert, Aaron Thean, G. Groeseneken	2014	35
8	Beyond interface: The impact of oxide border traps on InGaAs and Ge n-MOSFETs Dennis Lin, A. Alian, Shubhanshu Gupta, Bin Yang, E. Bury, Sonja Sioncke, R. Degraeve, M. L. Toledano, Raymond Krom, Paola Favia, H. Bender, Matty Caymax, Krishna C. Saraswat, Nadine Collaert, Aaron Thean	2012	33
9	BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities G. Groeseneken, J. Franco, M. Cho, B. Kaczer, M. Toledano-Luque, Ph. Roussel, T. Kauerauf, A. Alian, Jérôme Mitard, Hiroaki Arimura, Dennis Lin, Niamh Waldron, Sonja Sioncke, Liesbeth Witters, Hans Mertens, Lars‐Åke Ragnarsson, Marc Heyns, Nadine Collaert, Aaron Thean, An Steegen	2014	32
10	Intrinsic Robustness of TFET Subthreshold Swing to Interface and Oxide Traps: A Comparative PBTI Study of InGaAs TFETs and MOSFETs IEEE Electron Device Letters ·J. Franco, A. Alian, A. Vandooren, Anne S. Verhulst, Dimitri Linten, Nadine Collaert, Aaron Thean	2016	32
11	Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET A. Alian, J. Franco, A. Vandooren, Yves Mols, Anne S. Verhulst, Salim El Kazzi, R. Rooyackers, Devin Verreck, Quentin Smets, A. Mocuta, Nadine Collaert, Dennis Lin, Aaron Thean	2015	28
12	Suitability of high-k gate oxides for III–V devices: A PBTI study in In<inf>0.53</inf>Ga<inf>0.47</inf>As devices with Al<inf>2</inf>O<inf>3</inf> J. Franco, A. Alian, B. Kaczer, Di Lin, T. Ivanov, A. Pourghaderi, Koen Martens, Y. Mols, Dong Zhou, Niamh Waldron, Sonja Sioncke, T. Kauerauf, Nadine Collaert, Aaron Thean, M. Heyns, G. Groeseneken	2014	26
13	Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation IEEE Transactions on Electron Devices ·Kenichiro Takakura, V. Putcha, Eddy Simoen, A. Alian, Uthayasankaran Peralagu, Niamh Waldron, Bertrand Parvais, Nadine Collaert	2020	26
14	Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization IEEE Transactions on Electron Devices ·Anne S. Verhulst, Ali Saeidi, Igor Stolichnov, A. Alian, Hiroshi Iwai, Nadine Collaert, Adrian M. Ionescu	2019	25
15	Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces Applied Physics Letters ·A. Alian, Guy Brammertz, Clément Merckling, Andrea Firrincieli, Wei Wang, H. C. Lin, Matty Caymax, Marc Meuris, K. De Meyer, Marc Heyns	2011	24
16	AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact IEEE Electron Device Letters ·Xiao Sun, Sharon Cui, A. Alian, Guy Brammertz, Clément Merckling, Dennis Lin, T. P.	2012	22
17	GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL VUBIR (Vrije Universiteit Brussel) ·Bertrand Parvais, A. Alian, Uthayasankaran Peralagu, R. Rodríguez, Sachin Yadav, Ahmad Khaled, Rana ElKashlan, V. Putcha, A. Sibaja-Hernandez, Ming Zhao, Piet Wambacq, Nadine Collaert, Niamh Waldron	2020	20
18	Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below <tex>$\mathrm{V}_{\text{DD}}=400\text{mV}$</tex> Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·Ali Saeidi, Anne S. Verhulst, Igor Stolichnov, A. Alian, Hiroshi Iwai, Nadine Collaert, Adrian M. Ionescu	2018	18
19	A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near- and short-wave IR region for lightweight imaging applications APL Materials ·Yida Li, A. Alian, Maheswari Sivan, Li Huang, Kah‐Wee Ang, Dennis Lin, D. Mocuta, Nadine Collaert, Aaron Thean	2019	16
20	Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions 2022 International Electron Devices Meeting (IEDM) ·Hao Yu, Bertrand Parvais, Uthayasankaran Peralagu, Rana ElKashlan, R. Rodríguez, Ahmad Khaled, Sachin Yadav, A. Alian, Manhong Zhao, Nelson de Almeida Braga, J. L. Cobb, J. Fang, P. Cardinael, A. Sibaja-Hernandez, Nadine Collaert	2022	16

About A. Alian

A. Alian is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Biomedical Engineering and Materials Chemistry, having authored 88 papers that have together received 1.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (58 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers), GaN-based semiconductor devices and materials (38 papers), Radio Frequency Integrated Circuit Design (17 papers), Semiconductor Quantum Structures and Devices (16 papers), Ferroelectric and Negative Capacitance Devices (11 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers) and Semiconductor materials and interfaces (8 papers). The work is most often cited by research in Condensed Matter Physics (288 citations), Electrical and Electronic Engineering (933 citations), Atomic and Molecular Physics, and Optics (206 citations), Electronic, Optical and Magnetic Materials (87 citations) and Biomedical Engineering (131 citations). A. Alian has collaborated with scholars based in Belgium, United States and Taiwan. Frequent co-authors include Nadine Collaert, Dennis Lin, Guy Brammertz, Matty Caymax, Clément Merckling, Aaron Thean, Bertrand Parvais, Uthayasankaran Peralagu, Eddy Simoen and Niamh Waldron. Their work appears in journals such as IEEE Transactions on Electron Devices, Applied Physics Letters, IEEE Electron Device Letters, Semiconductor Science and Technology and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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