Quentin Smets

1.5k citations

57 papers · 953 · h-index 18

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
Materials Chemistry top 10%
- 2D Materials and Applications
- MXene and MAX Phase Materials
- Graphene research and applications

Papers in

Electrical and Electronic Engineering 49
- Advancements in Semiconductor Devices and Circuit Design 34
- Ferroelectric and Negative Capacitance Devices 31
- Semiconductor materials and devices 29
Materials Chemistry 25
- 2D Materials and Applications 22
- MXene and MAX Phase Materials 6
- Graphene research and applications 5

Co-authors: Marc Heyns (15 shared papers)Inge Asselberghs (26 shared papers)Iuliana Radu (18 shared papers)Anne S. Verhulst (17 shared papers)Dennis Lin (21 shared papers)Devin Verreck (24 shared papers)Cedric Huyghebaert (5 shared papers)G. Groeseneken (7 shared papers)
Journals: Applied Physics Letters (4 papers)IEEE Transactions on Electron Devices (4 papers)npj 2D Materials and Applications (3 papers)Scientific Reports (1 paper)Chemistry of Materials (1 paper)
Partner nations: Belgium United States Netherlands

In The Last Decade

Quentin Smets

55 papers receiving 930 citations

Peers

Countries citing papers authored by Quentin Smets

Since Specialization

Citations

This map shows the geographic impact of Quentin Smets's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Quentin Smets with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Quentin Smets more than expected).

Fields of papers citing papers by Quentin Smets

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Quentin Smets. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Quentin Smets. The network helps show where Quentin Smets may publish in the future.

Co-authors

The 25 scholars most cited alongside Quentin Smets, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Quentin Smets Line = papers co-authored together Quentin Smets links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 57 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices Nature Communications ·Mario Lanza, Quentin Smets, Cedric Huyghebaert, Lain‐Jong Li	2020	87
2	Figure of merit for and identification of sub-60 mV/decade devices Applied Physics Letters ·William G. Vandenberghe, Anne S. Verhulst, Bart Sorée, Wim Magnus, G. Groeseneken, Quentin Smets, Marc Heyns, Massimo V. Fischetti	2013	86
3	Two-Dimensional Crystal Grain Size Tuning in WS₂ Atomic Layer Deposition: An Insight in the Nucleation Mechanism Chemistry of Materials ·Benjamin Groven, Ankit Nalin Mehta, H. Bender, Johan Meersschaut, Thomas Nuytten, Patrick Verdonck, Thierry Conard, Quentin Smets, T. Schram, Ben Schoenaers, A. Stesmans, Valeri Afanas’ev, Wilfried Vandervorst, Marc Heyns, Matty Caymax, Iuliana Radu, Annelies Delabie	2018	63
4	Ultra-scaled MOCVD MoS₂ MOSFETs with 42nm contact pitch and 250µA/µm drain current Quentin Smets, Goutham Arutchelvan, Julien Jussot, Devin Verreck, Inge Asselberghs, Ankit Nalin Mehta, Abhinav Gaur, Dennis Lin, Salim El Kazzi, Benjamin Groven, Matty Caymax, Iuliana Radu	2019	62
5	MoS₂/MoTe₂ Heterostructure Tunnel FETs Using Gated Schottky Contacts Advanced Functional Materials ·Yashwanth Balaji, Quentin Smets, Áron Szabó, Marco Mascaro, Dennis Lin, Inge Asselberghs, Iuliana Radu, Mathieu Luisier, G. Groeseneken	2019	61
6	Impact of device scaling on the electrical properties of MoS2 field-effect transistors Scientific Reports ·Goutham Arutchelvan, Quentin Smets, Devin Verreck, Zubair Ahmed, Abhinav Gaur, Surajit Sutar, Julien Jussot, Benjamin Groven, Marc Heyns, Dennis Lin, Inge Asselberghs, Iuliana Radu	2021	52
7	Understanding and modelling the PBTI reliability of thin-film IGZO transistors 2021 IEEE International Electron Devices Meeting (IEDM) ·Adrian Chasin, J. Franco, K. Triantopoulos, H.F.W. Dekkers, Nouredine Rassoul, Attilio Belmonte, Quentin Smets, Subhali Subhechha, D. Claes, Michiel J. van Setten, Jérôme Mitard, Romain Delhougne, V. V. Afanas’ev, B. Kaczer, Gouri Sankar Kar	2021	47
8	InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models Journal of Applied Physics ·Quentin Smets, Devin Verreck, Anne S. Verhulst, R. Rooyackers, Clément Merckling, Maarten L. Van de Put, Eddy Simoen, Wilfried Vandervorst, Nadine Collaert, V. Y. Thean, Bart Sorée, G. Groeseneken, Marc Heyns	2014	42
9	WS<inf>2</inf> transistors on 300 mm wafers with BEOL compatibility T. Schram, Quentin Smets, Benjamin Groven, Markus Heyne, E. Kunnen, Arame Thiam, K. Devriendt, Annelies Delabie, Dennis Lin, Marcel Lux, Daniele Chiappe, Inge Asselberghs, S. Brus, Cedric Huyghebaert, Şafak Sayan, A. Juncker, Matty Caymax, Iuliana Radu	2017	39
10	Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Benjamin Groven, Ankit Nalin Mehta, H. Bender, Quentin Smets, Johan Meersschaut, Alexis Franquet, Thierry Conard, Thomas Nuytten, Patrick Verdonck, Wilfried Vandervorst, Marc Heyns, Iuliana Radu, Matty Caymax, Annelies Delabie	2017	36
11	Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers npj 2D Materials and Applications ·Daniil Marinov, Jean‐François de Marneffe, Quentin Smets, Goutham Arutchelvan, Kristof M. Bal, Е. Н. Воронина, Т. В. Рахимова, Yu. A. Mankelevich, Salim El Kazzi, Ankit Nalin Mehta, Pieter‐Jan Wyndaele, Markus Heyne, Jianran Zhang, Patrick C. With, Sreetama Banerjee, Erik C. Neyts, Inge Asselberghs, Dennis Lin, Stefan De Gendt	2021	35
12	Introducing 2D-FETs in Device Scaling Roadmap using DTCO Zubair Ahmed, Aryan Afzalian, T. Schram, Doyoung Jang, Devin Verreck, Quentin Smets, P. Schuddinck, Bilal Chehab, Surajit Sutar, Goutham Arutchelvan, Assawer Soussou, Inge Asselberghs, A. Spessot, Iuliana Radu, Bertrand Parvais, Julien Ryckaert, M. H. Na	2020	33
13	Calibration of Bulk Trap-Assisted Tunneling and Shockley–Read–Hall Currents and Impact on InGaAs Tunnel-FETs IEEE Transactions on Electron Devices ·Quentin Smets, Anne S. Verhulst, Eddy Simoen, David J. Gundlach, Curt A. Richter, Nadine Collaert, Marc Heyns	2017	32
14	Calibration of the Effective Tunneling Bandgap in GaAsSb/InGaAs for Improved TFET Performance Prediction IEEE Transactions on Electron Devices ·Quentin Smets, Anne S. Verhulst, Salim El Kazzi, David J. Gundlach, Curt A. Richter, A. Mocuta, Nadine Collaert, Aaron Thean, Marc Heyns	2016	27
15	Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET A. Alian, J. Franco, A. Vandooren, Yves Mols, Anne S. Verhulst, Salim El Kazzi, R. Rooyackers, Devin Verreck, Quentin Smets, A. Mocuta, Nadine Collaert, Dennis Lin, Aaron Thean	2015	26
16	Perspective of tunnel-FET for future low-power technology nodes Anne S. Verhulst, Devin Verreck, Quentin Smets, Kuo-Hsing Kao, Maarten L. Van de Put, R. Rooyackers, Bart Sorée, A. Vandooren, K. De Meyer, G. Groeseneken, Marc Heyns, A. Mocuta, Nadine Collaert, A. V-Y. Thean	2014	23
17	Dual gate synthetic WS₂ MOSFETs with 120μS/μm Gm 2.7μF/cm² capacitance and ambipolar channel Dennis Lin, Xiangyu Wu, Daire Cott, Devin Verreck, Benjamin Groven, Stephanie Sergeant, Quentin Smets, Surajit Sutar, Inge Asselberghs, Iuliana Radu	2020	19
18	Importance of the substrate’s surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides Nanotechnology ·Jiongjiong Mo, Salim El Kazzi, Wouter Mortelmans, Ankit Nalin Mehta, Stefanie Sergeant, Quentin Smets, Inge Asselberghs, Cedric Huyghebaert	2019	17
19	Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes IEEE Journal of the Electron Devices Society ·Jasper Bizindavyi, Anne S. Verhulst, Quentin Smets, Devin Verreck, Bart Sorée, G. Groeseneken	2018	17
20	Dual gate synthetic MoS₂ MOSFETs with 4.56µF/cm² channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg 2021 IEEE International Electron Devices Meeting (IEDM) ·Xiangyu Wu, Daire Cott, Zaoyang Lin, Yuanyuan Shi, Benjamin Groven, P. Morin, Devin Verreck, Quentin Smets, Henry Medina, Surajit Sutar, Inge Asselberghs, Iuliana Radu, Dennis Lin	2021	16

About Quentin Smets

Quentin Smets is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 57 papers that have together received 953 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (34 papers), Ferroelectric and Negative Capacitance Devices (31 papers), Semiconductor materials and devices (29 papers), 2D Materials and Applications (22 papers), Nanowire Synthesis and Applications (6 papers), MXene and MAX Phase Materials (6 papers), Graphene research and applications (5 papers) and Semiconductor Quantum Structures and Devices (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (739 citations), Materials Chemistry (522 citations), Biomedical Engineering (199 citations), Electronic, Optical and Magnetic Materials (42 citations) and Atomic and Molecular Physics, and Optics (65 citations). Quentin Smets has collaborated with scholars based in Belgium, United States and Netherlands. Frequent co-authors include Marc Heyns, Inge Asselberghs, Iuliana Radu, Anne S. Verhulst, Dennis Lin, Devin Verreck, Cedric Huyghebaert, G. Groeseneken, Benjamin Groven and Mario Lanza. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Electron Devices, npj 2D Materials and Applications, Scientific Reports and Chemistry of Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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