Dennis Lin

2.8k citations

125 papers · 2.0k · h-index 26

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
Materials Chemistry top 5%
- 2D Materials and Applications
- MXene and MAX Phase Materials
- Graphene research and applications

Papers in

Electrical and Electronic Engineering 106
- Semiconductor materials and devices 67
- Advancements in Semiconductor Devices and Circuit Design 54
- Ferroelectric and Negative Capacitance Devices 31
Materials Chemistry 59
- 2D Materials and Applications 38
- Graphene research and applications 18
- MXene and MAX Phase Materials 16

Co-authors: Iuliana Radu (40 shared papers)Matty Caymax (33 shared papers)Inge Asselberghs (38 shared papers)Guy Brammertz (15 shared papers)A. Alian (18 shared papers)Yashwanth Balaji (10 shared papers)Marc Heyns (23 shared papers)Annelies Delabie (19 shared papers)
Journals: IEEE Electron Device Letters (7 papers)Microelectronic Engineering (6 papers)Applied Physics Letters (5 papers)Journal of Applied Physics (4 papers)IEEE Transactions on Electron Devices (4 papers)
Partner nations: Belgium United States Singapore

In The Last Decade

Dennis Lin

121 papers receiving 1.9k citations

Peers

Countries citing papers authored by Dennis Lin

Since Specialization

Citations

This map shows the geographic impact of Dennis Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dennis Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dennis Lin more than expected).

Fields of papers citing papers by Dennis Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dennis Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dennis Lin. The network helps show where Dennis Lin may publish in the future.

Co-authors

The 25 scholars most cited alongside Dennis Lin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Dennis Lin Line = papers co-authored together Dennis Lin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 125 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Germanium surface passivation and atomic layer deposition of high-kdielectrics—a tutorial review on Ge-based MOS capacitors Semiconductor Science and Technology ·Qi Xie, Shaoren Deng, Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, Xin-Ping Qu, Yu-Long Jiang, Davy Deduytsche, Christophe Detavernier	2012	133
2	Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors ACS Nano ·Giovanni V. Resta, Yashwanth Balaji, Dennis Lin, Iuliana Radu, Francky Catthoor, Pierre‐Emmanuel Gaillardon, Giovanni De Micheli	2018	129
3	A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ and InP Capacitors IEEE Transactions on Electron Devices ·Guy Brammertz, A. Alian, Dennis Lin, Marc Meuris, Matty Caymax, Wei Wang	2011	90
4	Polarity control in WSe2 double-gate transistors Scientific Reports ·Giovanni V. Resta, Surajit Sutar, Yashwanth Balaji, Dennis Lin, Praveen Raghavan, Iuliana Radu, Francky Catthoor, Aaron Thean, Pierre‐Emmanuel Gaillardon, Giovanni De Micheli	2016	71
5	Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects IEEE Transactions on Device and Materials Reliability ·Eddy Simoen, Dennis Lin, A. Alian, Guy Brammertz, Clément Merckling, Jérôme Mitard, Cor Claeys	2013	66
6	Ultra-scaled MOCVD MoS₂ MOSFETs with 42nm contact pitch and 250µA/µm drain current Quentin Smets, Goutham Arutchelvan, Julien Jussot, Devin Verreck, Inge Asselberghs, Ankit Nalin Mehta, Abhinav Gaur, Dennis Lin, Salim El Kazzi, Benjamin Groven, Matty Caymax, Iuliana Radu	2019	62
7	MoS₂/MoTe₂ Heterostructure Tunnel FETs Using Gated Schottky Contacts Advanced Functional Materials ·Yashwanth Balaji, Quentin Smets, Áron Szabó, Marco Mascaro, Dennis Lin, Inge Asselberghs, Iuliana Radu, Mathieu Luisier, G. Groeseneken	2019	61
8	Impact of device scaling on the electrical properties of MoS2 field-effect transistors Scientific Reports ·Goutham Arutchelvan, Quentin Smets, Devin Verreck, Zubair Ahmed, Abhinav Gaur, Surajit Sutar, Julien Jussot, Benjamin Groven, Marc Heyns, Dennis Lin, Inge Asselberghs, Iuliana Radu	2021	52
9	Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity Nanotechnology ·Daniele Chiappe, Jonathan Ludwig, Alessandra Leonhardt, Salim El Kazzi, Ankit Nalin Mehta, Thomas Nuytten, Umberto Celano, Surajit Sutar, Geoffrey Pourtois, Matty Caymax, Kristof Paredis, Wilfried Vandervorst, Dennis Lin, Stefan De Gendt, Kathy Barla, Cedric Huyghebaert, Inge Asselberghs, Iuliana Radu	2018	50
10	Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution Dennis Lin, Guy Brammertz, Sonja Sioncke, Claudia Fleischmann, Annelies Delabie, Koen Martens, H. Bender, Thierry Conard, Wei-Hsiung Tseng, Jie Lin, W. -E. Wang, K. Temst, A. Vatomme, Jérôme Mitard, Matty Caymax, Marc Meuris, M. M. Heyns, Thomas Hoffmann	2009	46
11	Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper) Microelectronic Engineering ·Matty Caymax, Guy Brammertz, Annelies Delabie, Sonja Sioncke, Dennis Lin, Marco Scarrozza, Geoffrey Pourtois, Wei Wang, Marc Meuris, Marc Heyns	2009	45
12	InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature Applied Physics Letters ·A. Alian, Y. Mols, Caio Cesar Mendes Bordallo, Devin Verreck, Anne S. Verhulst, A. Vandooren, R. Rooyackers, Paula Ghedini Der Agopian, João Antônio Martino, A. Thean, Dennis Lin, D. Mocuta, Nadine Collaert	2016	40
13	WS<inf>2</inf> transistors on 300 mm wafers with BEOL compatibility T. Schram, Quentin Smets, Benjamin Groven, Markus Heyne, E. Kunnen, Arame Thiam, K. Devriendt, Annelies Delabie, Dennis Lin, Marcel Lux, Daniele Chiappe, Inge Asselberghs, S. Brus, Cedric Huyghebaert, Şafak Sayan, A. Juncker, Matty Caymax, Iuliana Radu	2017	39
14	Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics ACS Nano ·Yuanyuan Shi, Benjamin Groven, Jill Serron, Xiangyu Wu, Ankit Nalin Mehta, Albert Minj, Stefanie Sergeant, Han Han, Inge Asselberghs, Dennis Lin, Steven Brems, Cedric Huyghebaert, P. Morin, Iuliana Radu, Matty Caymax	2021	38
15	Tunneling Transistors Based on MoS₂/MoTe₂ Van der Waals Heterostructures IEEE Journal of the Electron Devices Society ·Yashwanth Balaji, D. Mocuta, G. Groeseneken, Quentin Smets, César Javier Lockhart de la Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis Lin, Cedric Huyghebaert, Iuliana Radu	2018	38
16	Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers npj 2D Materials and Applications ·Daniil Marinov, Jean‐François de Marneffe, Quentin Smets, Goutham Arutchelvan, Kristof M. Bal, Е. Н. Воронина, Т. В. Рахимова, Yu. A. Mankelevich, Salim El Kazzi, Ankit Nalin Mehta, Pieter‐Jan Wyndaele, Markus Heyne, Jianran Zhang, Patrick C. With, Sreetama Banerjee, Erik C. Neyts, Inge Asselberghs, Dennis Lin, Stefan De Gendt	2021	35
17	Beyond interface: The impact of oxide border traps on InGaAs and Ge n-MOSFETs Dennis Lin, A. Alian, Shubhanshu Gupta, Bin Yang, E. Bury, Sonja Sioncke, R. Degraeve, M. L. Toledano, Raymond Krom, Paola Favia, H. Bender, Matty Caymax, Krishna C. Saraswat, Nadine Collaert, Aaron Thean	2012	33
18	Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method Shashank Gupta, Benjamin Vincent, Bin Yang, Dennis Lin, Federica Gencarelli, Jyi-Tsong Lin, R. Chen, Olivier Richard, H. Bender, Blanka Magyari-Köpe, Matty Caymax, J. Dekoster, Yoshio Nishi, Krishna C. Saraswat	2012	33
19	MoS₂ Functionalization with a Sub-nm Thin SiO₂ Layer for Atomic Layer Deposition of High-κ Dielectrics Chemistry of Materials ·Haodong Zhang, Goutham Arutchelvan, Johan Meersschaut, Abhinav Gaur, Thierry Conard, H. Bender, Dennis Lin, Inge Asselberghs, Marc Heyns, Iuliana Radu, Wilfried Vandervorst, Annelies Delabie	2017	33
20	The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate Lirias (KU Leuven) ·Tian‐Li Wu, Denis Marcon, Brice De Jaeger, M. Van Hove, Benoit Bakeroot, Dennis Lin, Steve Stoffels, Xuanwu Kang, Robin Roelofs, G. Groeseneken, Stefaan Decoutere	2015	31

About Dennis Lin

Dennis Lin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics, having authored 125 papers that have together received 2.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (67 papers), Advancements in Semiconductor Devices and Circuit Design (54 papers), 2D Materials and Applications (38 papers), Ferroelectric and Negative Capacitance Devices (31 papers), Nanowire Synthesis and Applications (21 papers), Graphene research and applications (18 papers), Semiconductor materials and interfaces (16 papers) and MXene and MAX Phase Materials (16 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.7k citations), Materials Chemistry (963 citations), Atomic and Molecular Physics, and Optics (321 citations), Biomedical Engineering (362 citations) and Condensed Matter Physics (68 citations). Dennis Lin has collaborated with scholars based in Belgium, United States and Singapore. Frequent co-authors include Iuliana Radu, Matty Caymax, Inge Asselberghs, Guy Brammertz, A. Alian, Yashwanth Balaji, Marc Heyns, Annelies Delabie, Quentin Smets and Francky Catthoor. Their work appears in journals such as IEEE Electron Device Letters, Microelectronic Engineering, Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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