A. Stesmans

13.9k citations

458 papers · 11.9k · 1 hit paper · h-index 55

Impact in

Materials Chemistry top 0.5%
- Silicon Nanostructures and Photoluminescence
- 2D Materials and Applications
- Graphene research and applications
- Electronic and Structural Properties of Oxides
Electrical and Electronic Engineering top 0.2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis

Papers in

Electrical and Electronic Engineering 367
- Semiconductor materials and devices 281
- Advancements in Semiconductor Devices and Circuit Design 67
- Thin-Film Transistor Technologies 59
Materials Chemistry 257
- Silicon Nanostructures and Photoluminescence 89
- Electronic and Structural Properties of Oxides 65
- 2D Materials and Applications 45
- Graphene research and applications 43

Co-authors: V. V. Afanas’ev (193 shared papers)Michel Houssa (106 shared papers)Geoffrey Pourtois (43 shared papers)Emilio Scalise (19 shared papers)V. V. Afanas’ev (17 shared papers)M. M. Heyns (15 shared papers)G. Van Gorp (11 shared papers)Gerhard Pensl (9 shared papers)
Journals: Applied Physics Letters (73 papers)Microelectronic Engineering (37 papers)Journal of Applied Physics (34 papers)Physical review. B, Condensed matter (24 papers)Journal of Physics Condensed Matter (21 papers)
Partner nations: Belgium United States Germany

In The Last Decade

A. Stesmans

444 papers receiving 11.6k citations

A. Stesmans's Hit Papers

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Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 2011 · 599 citations

Peers

Countries citing papers authored by A. Stesmans

Since Specialization

Citations

This map shows the geographic impact of A. Stesmans's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Stesmans with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Stesmans more than expected).

Fields of papers citing papers by A. Stesmans

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Stesmans. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Stesmans. The network helps show where A. Stesmans may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Stesmans, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Stesmans Line = papers co-authored together A. Stesmans links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 458 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 Nano Research ·Emilio Scalise, Michel Houssa, Geoffrey Pourtois, V. V. Afanas’ev, A. Stesmans Hit paper breakdown →	2011	599
2	Classification and control of the origin of photoluminescence from Si nanocrystals Nature Nanotechnology ·S. Godefroo, M. Hayne, M. Jivanescu, A. Stesmans, Margit Zacharias, Oleg I. Lebedev, Gustaaf Van Tendeloo, V. V. Moshchalkov	2008	447
3	Electronic properties of hydrogenated silicene and germanene Applied Physics Letters ·Michel Houssa, Emilio Scalise, Kiroubanand Sankaran, Geoffrey Pourtois, V. V. Afanas’ev, A. Stesmans	2011	395
4	Internal photoemission at interfaces of high-κ insulators with semiconductors and metals Journal of Applied Physics ·V. V. Afanas’ev, A. Stesmans	2007	229
5	Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2 Journal of Applied Physics ·V. V. Afanas’ev, Michel Houssa, A. Stesmans, M. M. Heyns	2002	184
6	Structural relaxation ofPbdefects at the (111)Si/SiO2interface as a function of oxidation temperature: ThePb-generation–stress relationship Physical review. B, Condensed matter ·A. Stesmans	1993	181
7	Internal photoemission of electrons and holes from (100)Si into HfO2 Applied Physics Letters ·V. V. Afanas’ev, A. Stesmans, F. Chen, Xiaoqing Shi, S.A. Campbell	2002	180
8	Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation Applied Physics Letters ·V. V. Afanas’ev, A. Stesmans, Florin Ciobanu, Gerhard Pensl, Kuan Yew Cheong, Sima Dimitrijev	2003	172
9	Vibrational properties of silicene and germanene Nano Research ·Emilio Scalise, Michel Houssa, Geoffrey Pourtois, Bas van den Broek, V. V. Afanas’ev, A. Stesmans	2012	138
10	Passivation of P b0 and P b1 interface defects in thermal (100) Si/SiO2 with molecular hydrogen Applied Physics Letters ·A. Stesmans	1996	134
11	Band alignment and defect states at SiC/oxide interfaces Journal of Physics Condensed Matter ·Vorobeĭchikov Ev, Florin Ciobanu, Sima Dimitrijev, Gerhard Pensl, A. Stesmans	2004	131
12	Shallow electron traps at the 4H–SiC/SiO2 interface Applied Physics Letters ·V. V. Afanas’ev, A. Stesmans, M. Baßler, Gerhard Pensl, Max J. Schulz	2000	127
13	First-principles study of strained 2D MoS2 Physica E Low-dimensional Systems and Nanostructures ·Emilio Scalise, Michel Houssa, G. Pourtois, V. V. Afanas’ev, A. Stesmans	2012	123
14	Interface traps and dangling-bond defects in (100)Ge∕HfO2 Applied Physics Letters ·V. V. Afanas’ev, Yanina Fedorenko, A. Stesmans	2005	122
15	Degradation of sulfamethoxazole by heat-activated persulfate oxidation: Elucidation of the degradation mechanism and influence of process parameters Chemical Engineering Journal ·Hannah Milh, Ben Schoenaers, A. Stesmans, Deirdre Cabooter, Raf Dewil	2019	121
16	Electron energy barriers between (100)Si and ultrathin stacks of SiO2, Al2O3, and ZrO2 insulators Applied Physics Letters ·V. V. Afanas’ev, Michel Houssa, A. Stesmans, M. M. Heyns	2001	120
17	Dissociation kinetics of hydrogen-passivatedPbdefects at the(111)Si/SiO2interface Physical review. B, Condensed matter ·A. Stesmans	2000	118
18	Structure and defects of detonation synthesis nanodiamond Diamond and Related Materials ·Konstantin Iakoubovskii, М. В. Байдакова, Brecht Wouters, A. Stesmans, G.J. Adriaenssens, A. Ya. Vul’, Piet J. Grobet	2000	117
19	Pb1interface defect in thermal(100)Si/SiO2: 29Sihyperfine interaction Physical review. B, Condensed matter ·A. Stesmans, B. Nouwen, V. V. Afanas’ev	1998	112
20	Two-dimensional hexagonal tin: ab initio geometry, stability, electronic structure and functionalization 2D Materials ·Bas van den Broek, Michel Houssa, Emilio Scalise, Geoffrey Pourtois, V. V. Afanas’ev, A. Stesmans	2014	111

About A. Stesmans

A. Stesmans is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Ceramics and Composites, having authored 458 papers that have together received 11.9k indexed citations. Recurring topics across this work include Semiconductor materials and devices (281 papers), Semiconductor materials and interfaces (99 papers), Silicon Nanostructures and Photoluminescence (89 papers), Advancements in Semiconductor Devices and Circuit Design (67 papers), Electronic and Structural Properties of Oxides (65 papers), Thin-Film Transistor Technologies (59 papers), 2D Materials and Applications (45 papers) and Graphene research and applications (43 papers). The work is most often cited by research in Materials Chemistry (6.9k citations), Electrical and Electronic Engineering (8.6k citations), Atomic and Molecular Physics, and Optics (2.8k citations), Ceramics and Composites (496 citations) and Electronic, Optical and Magnetic Materials (1.2k citations). A. Stesmans has collaborated with scholars based in Belgium, United States and Germany. Frequent co-authors include V. V. Afanas’ev, Michel Houssa, Geoffrey Pourtois, Emilio Scalise, V. V. Afanas’ev, M. M. Heyns, G. Van Gorp, Gerhard Pensl, K. Vanheusden and M. Jivanescu. Their work appears in journals such as Applied Physics Letters, Microelectronic Engineering, Journal of Applied Physics, Physical review. B, Condensed matter and Journal of Physics Condensed Matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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