M. Cassé

4.4k citations

179 papers · 2.2k · h-index 24

Impact in

Electrical and Electronic Engineering top 2%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
Biomedical Engineering top 5%
- Nanowire Synthesis and Applications

Papers in

Electrical and Electronic Engineering 175
- Advancements in Semiconductor Devices and Circuit Design 164
- Semiconductor materials and devices 163
- Integrated Circuits and Semiconductor Failure Analysis 40
- Silicon Carbide Semiconductor Technologies 30
- Ferroelectric and Negative Capacitance Devices 12
Biomedical Engineering 43
- Nanowire Synthesis and Applications 42

Co-authors: Sylvain Barraud (65 shared papers)T. Poiroux (16 shared papers)M. Vinet (68 shared papers)T. Ernst (10 shared papers)G. Reimbold (50 shared papers)O. Faynot (25 shared papers)G. Ghibaudo (35 shared papers)R. Coquand (8 shared papers)
Journals: Solid-State Electronics (34 papers)IEEE Transactions on Electron Devices (15 papers)Microelectronic Engineering (8 papers)Journal of Applied Physics (5 papers)Applied Physics Letters (4 papers)
Partner nations: France Brazil Switzerland

In The Last Decade

M. Cassé

164 papers receiving 2.1k citations

Peers

Countries citing papers authored by M. Cassé

Since Specialization

Citations

This map shows the geographic impact of M. Cassé's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Cassé with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Cassé more than expected).

Fields of papers citing papers by M. Cassé

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Cassé. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Cassé. The network helps show where M. Cassé may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Cassé, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Cassé Line = papers co-authored together M. Cassé links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 179 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm IEEE Electron Device Letters ·Sylvain Barraud, Matthieu Berthomé, R. Coquand, M. Cassé, T. Ernst, M.-P. Samson, P. Perreau, K.K. Bourdelle, O. Faynot, T. Poiroux	2012	207
2	Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening IEEE Electron Device Letters ·Heorhii Bohuslavskyi, A. G. M. Jansen, Sylvain Barraud, V. Barral, M. Cassé, Loïck Le Guevel, X. Jehl, Louis Hutin, Benoît Bertrand, G. Billiot, Gaël Pillonnet, F. Arnaud, Philippe Galy, S. De Franceschi, M. Vinet, M. Sanquer	2019	106
3	Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters IEEE Transactions on Electron Devices ·M. Cassé, L. Thévenod, B. Guillaumot, L. Tosti, F. Martín, Jérôme Mitard, O. Weber, F. Andrieu, T. Ernst, G. Reimbold, T. Billon, M. Mouis, F. Boulanger	2006	104
4	Bonded planar double-metal-gate NMOS transistors down to 10 nm IEEE Electron Device Letters ·M. Vinet, T. Poiroux, J. Widiez, J. Lolivier, B. Prévitali, C. Vizioz, B. Guillaumot, Y. Le Tiec, P. Besson, B. Biasse, F. Allain, M. Cassé, D. Lafond, J. M. Hartmann, Y. Morand, Julien Chiaroni, S. Deleonibus	2005	98
5	Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm IEEE Electron Device Letters ·Sylvain Barraud, R. Coquand, M. Cassé, Masahiro Koyama, Jean‐Michel Hartmann, V. Maffini-Alvaro, C. Comboroure, C. Vizioz, F. Aussenac, O. Faynot, T. Poiroux	2012	98
6	7-Levels-Stacked Nanosheet GAA Transistors for High Performance Computing HAL (Le Centre pour la Communication Scientifique Directe) ·Sylvain Barraud, B. Prévitali, C. Vizioz, Jean‐Michel Hartmann, J. A. Sturm, J. Lassarre, C. Perrot, Ph. Rodriguez, V. Loup, A. Magalhaes-Lucas, R. Kies, G. Romano, M. Cassé, Nicolas Bernier, Audrey Jannaud, Adeline Grenier, F. Andrieu	2020	74
7	Strained tunnel FETs with record I<inf>ON</inf>: first demonstration of ETSOI TFETs with SiGe channel and RSD A. Villalon, C. Le Royer, M. Cassé, David Cooper, B. Prévitali, C. Tabone, Jean‐Michel Hartmann, P. Perreau, P. Rivallin, J.F. Damlencourt, F. Allain, F. Andrieu, O. Weber, O. Faynot, T. Poiroux	2012	58
8	Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K IEEE Transactions on Electron Devices ·K. Triantopoulos, M. Cassé, Sylvain Barraud, S. Haendler, Emmanuel Vincent, M. Vinet, F. Gaillard, G. Ghibaudo	2019	53
9	Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric Solid-State Electronics ·F. Lime, K. Oshima, M. Cassé, G. Ghibaudo, S. Cristoloveanu, B. Guillaumot, Hiroshi Iwai	2003	47
10	Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width IEEE Transactions on Electron Devices ·R. Coquand, M. Cassé, Sylvain Barraud, David Cooper, Virginie Maffini-Alvaro, Marie-Pierre Samson, S. Monfray, F. Bœuf, G. Ghibaudo, Olivier Faynot, T. Poiroux	2013	47
11	Spectroscopic charge pumping in Si nanowire transistors with a high-κ/metal gate Applied Physics Letters ·M. Cassé, K. Tachi, Sebastian Thiele, T. Ernst	2010	45
12	Scaling of high-k/metal-gate Trigate SOI nanowire transistors down to 10nm width R. Coquand, Sylvain Barraud, M. Cassé, Paul Leroux, C. Vizioz, C. Comboroure, P. Perreau, E Ernst, Marie-Pierre Samson, V. Maffini-Alvaro, C. Tabone, S. Barnola, Daniela Munteanu, G. Ghibaudo, S. Monfray, (unknown), T. Poiroux	2012	43
13	Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications IEEE Transactions on Electron Devices ·Bruna Cardoso Paz, M. Cassé, Christoforos Theodorou, G. Ghibaudo, Thorsten Kammler, Luca Pirro, M. Vinet, S. De Franceschi, Tristan Meunier, F. Gaillard	2020	43
14	The influence of Coulomb centers located in HfO2/SiO2 gate stacks on the effective electron mobility Journal of Applied Physics ·Sylvain Barraud, O. Bonno, M. Cassé	2008	37
15	Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs F. Andrieu, T. Ernst, F. Lime, F. Rochette, K. Romanjek, Sylvain Barraud, C. Ravit, (unknown), M. Jurczak, M. Cassé, O. Weber, L. Brévard, G. Reimbold, G. Ghibaudo, S. Deleonibus	2005	37
16	Temperature dependence of the Aharonov-Bohm oscillations and the energy spectrum in a single-mode ballistic ring Physical review. B, Condensed matter ·M. Cassé, Z. D. Kvon, G. M. Gusev, E. B. Ol'Shanetskiǐ, L. V. Litvin, A. V. Plotnikov, D. K. Maude, J.C. Portal	2000	34
17	Front- and back-channel mobility in ultrathin SOI-MOSFETs by front-gate split CV method Solid-State Electronics ·Akiko Ohata, M. Cassé, S. Cristoloveanu	2007	30
18	Gate-induced floating-body effect in fully-depleted SOI MOSFETs with tunneling oxide and back-gate biasing Solid-State Electronics ·M. Cassé, J. Pretet, S. Cristoloveanu, T. Poiroux, C. Fenouillet-Béranger, F. Fruleux, C. Raynaud, G. Reimbold	2004	29
19	On the mobility in high-κ/metal gate MOSFETs: Evaluation of the high-κ phonon scattering impact Solid-State Electronics ·O. Weber, M. Cassé, L. Thévenod, F. Ducroquet, T. Ernst, S. Deleonibus	2006	29
20	Guidelines to improve mobility performances and BTI reliability of advanced high-k/metal gate stacks X. Garros, M. Cassé, G. Reimbold, F. Martín, Cédric Leroux, Aurélien Fanton, O. Renault, V. Cosnier, F. Boulanger	2008	26

About M. Cassé

M. Cassé is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry and Condensed Matter Physics, having authored 179 papers that have together received 2.2k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (164 papers), Semiconductor materials and devices (163 papers), Nanowire Synthesis and Applications (42 papers), Integrated Circuits and Semiconductor Failure Analysis (40 papers), Silicon Carbide Semiconductor Technologies (30 papers), Quantum and electron transport phenomena (21 papers), Ferroelectric and Negative Capacitance Devices (12 papers) and Semiconductor Quantum Structures and Devices (11 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.1k citations), Biomedical Engineering (516 citations), Atomic and Molecular Physics, and Optics (301 citations), Structural Biology (9 citations) and Condensed Matter Physics (45 citations). M. Cassé has collaborated with scholars based in France, Brazil and Switzerland. Frequent co-authors include Sylvain Barraud, T. Poiroux, M. Vinet, T. Ernst, G. Reimbold, O. Faynot, G. Ghibaudo, R. Coquand, Jean‐Michel Hartmann and C. Vizioz. Their work appears in journals such as Solid-State Electronics, IEEE Transactions on Electron Devices, Microelectronic Engineering, Journal of Applied Physics and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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