H. Bender

11.6k citations

459 papers · 8.1k · h-index 44

Impact in

Structural Biology top 1%
Electrical and Electronic Engineering top 0.5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices

Papers in

Electrical and Electronic Engineering 361
- Semiconductor materials and devices 208
- Silicon and Solar Cell Technologies 87
- Integrated Circuits and Semiconductor Failure Analysis 83
- Advancements in Semiconductor Devices and Circuit Design 77
Atomic and Molecular Physics, and Optics 178
- Semiconductor materials and interfaces 102
- Semiconductor Quantum Structures and Devices 39

Co-authors: Wilfried Vandervorst (108 shared papers)Olivier Richard (109 shared papers)Matty Caymax (66 shared papers)Marc Heyns (62 shared papers)Paola Favia (76 shared papers)Roger Loo (74 shared papers)Thierry Conard (44 shared papers)M. Jurczak (22 shared papers)
Journals: Journal of Applied Physics (36 papers)Applied Physics Letters (26 papers)Microelectronic Engineering (18 papers)Journal of The Electrochemical Society (17 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (13 papers)
Partner nations: Belgium United States Germany

In The Last Decade

H. Bender

444 papers receiving 7.9k citations

Peers

Countries citing papers authored by H. Bender

Since Specialization

Citations

This map shows the geographic impact of H. Bender's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Bender with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Bender more than expected).

Fields of papers citing papers by H. Bender

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Bender. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Bender. The network helps show where H. Bender may publish in the future.

Co-authors

The 25 scholars most cited alongside H. Bender, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. Bender Line = papers co-authored together H. Bender links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 459 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices Nano Letters ·Umberto Celano, Ludovic Goux, Attilio Belmonte, Karl Opsomer, Alexis Franquet, Andreas Schulze, Christophe Detavernier, Olivier Richard, H. Bender, M. Jurczak, Wilfried Vandervorst	2014	298
2	Nanometer-scale magnetic MnAs particles in GaAs grown by molecular beam epitaxy Applied Physics Letters ·(unknown), R. Oesterholt, A. Van Esch, H. Bender, C. Bruynseraede, Chris Van Hoof, G. Borghs	1996	205
3	Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory Nano Letters ·Umberto Celano, Ludovic Goux, R. Degraeve, A. Fantini, Olivier Richard, H. Bender, M. Jurczak, Wilfried Vandervorst	2015	170
4	Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition Applied Physics Letters ·Benjamin Vincent, Federica Gencarelli, H. Bender, Clément Merckling, Bastien Douhard, Dirch Hjorth Petersen, Ole Hansen, Henrik H. Henrichsen, Johan Meersschaut, Wilfried Vandervorst, Marc Heyns, Roger Loo, Matty Caymax	2011	169
5	Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron Microscopy Physical Review Letters ·F. Hüe, Martin Hÿtch, H. Bender, Florent Houdellier, A. Claverie	2008	150
6	Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy Journal of Applied Physics ·Riikka L. Puurunen, Wilfried Vandervorst, W.F.A. Besling, Olivier Richard, H. Bender, Thierry Conard, Chao Zhao, Annelies Delabie, Matty Caymax, Stefan De Gendt, Marc Heyns, M. Viitanen, M. de Ridder, Hidde H. Brongersma, Y. Tamminga, Thuy Xuan Huynh Dao, Toon de Win, Marcel A. Verheijen, M. Kaiser, M. Tuominen	2004	133
7	Experimental determination of the maximum post-process annealing temperature for standard CMOS wafers IEEE Transactions on Electron Devices ·Sherif Sedky, Ann Witvrouw, H. Bender, Kris Baert	2001	124
8	Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·A. Lauwers, An Steegen, Muriel de Potter, Richard Lindsay, A. Satta, H. Bender, Karen Maex	2001	122
9	Ternary rare-earth metal oxide high-k layers on silicon oxide Applied Physics Letters ·Chao Zhao, T. Witters, Bert Brijs, H. Bender, Olivier Richard, Matty Caymax, T. Heeg, J. Schubert, V. V. Afanas’ev, A. Stesmans, Darrell G. Schlom	2005	120
10	Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn ECS Journal of Solid State Science and Technology ·Federica Gencarelli, Benjamin Vincent, J. Demeulemeester, A. Vantomme, Alain Moussa, Alexis Franquet, A. Kumar, H. Bender, Johan Meersschaut, Wilfried Vandervorst, Roger Loo, Matty Caymax, K. Temst, Marc Heyns	2013	109
11	Investigation of the oxygen-related lattice defects in Czochralski silicon by means of electron microscopy techniques physica status solidi (a) ·H. Bender	1984	103
12	Site Selective Integration of III–V Materials on Si for Nanoscale Logic and Photonic Devices Crystal Growth & Design ·Mohanchand Paladugu, Clément Merckling, Roger Loo, Olivier Richard, H. Bender, J. Dekoster, Wilfried Vandervorst, Matty Caymax, Marc Heyns	2012	93
13	AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility Applied Physics Express ·Kai Cheng, Hu Liang, M. Van Hove, Karen Geens, Brice De Jaeger, Puneet Srivastava, Xuanwu Kang, Paola Favia, H. Bender, Stefaan Decoutere, J. Dekoster, Jose Ignacio del Agua Borniquel, Sung Won Jun, Hua Chung	2011	92
14	In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines Journal of Applied Physics ·V. S. Teodorescu, L. C. Nistor, H. Bender, An Steegen, A. Lauwers, Karen Maex, J. van Landuyt	2001	86
15	Two-step room temperature grain growth in electroplated copper Journal of Applied Physics ·Sywert Brongersma, E. Richard, I. Vervoort, H. Bender, Wilfried Vandervorst, Sébastien Lagrange, Gerald Beyer, K. Maex	1999	82
16	<title>Comparison between wet HF etching and vapor HF etching for sacrificial oxide removal</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Ann Witvrouw, Bert Du Bois, Piet De Moor, Agnes Verbist, Chris Van Hoof, H. Bender, (unknown)	2000	81
17	Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS₂ from WF₆, H₂ Plasma, and H₂S Chemistry of Materials ·Benjamin Groven, Markus Heyne, Ankit Nalin Mehta, H. Bender, Thomas Nuytten, Johan Meersschaut, Thierry Conard, Patrick Verdonck, Sven Van Elshocht, Wilfried Vandervorst, Stefan De Gendt, Marc Heyns, Iuliana Radu, Matty Caymax, Annelies Delabie	2017	76
18	Low temperature deposition of 2D WS₂ layers from WF₆ and H₂S precursors: impact of reducing agents Chemical Communications ·Annelies Delabie, Matty Caymax, Benjamin Groven, Markus Heyne, Karel Haesevoets, Johan Meersschaut, Thomas Nuytten, H. Bender, Thierry Conard, Patrick Verdonck, Sven Van Elshocht, Stefan De Gendt, Marc Heyns, K. Barla, Iuliana Radu, Aaron Thean	2015	75
19	Copper plating for 3D interconnects Microelectronic Engineering ·Aleksandar Radisic, Ole Lühn, Harold Philipsen, Zaid El-Mekki, M. Honoré, Simon Rodet, Silvia Armini, C. Drijbooms, H. Bender, Wouter Ruythooren	2010	73
20	Gettering mechanisms in silicon Journal of Applied Physics ·M. L. Polignano, G. F. Cerofolini, H. Bender, C. Claeys	1988	72

About H. Bender

H. Bender is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Electronic, Optical and Magnetic Materials, having authored 459 papers that have together received 8.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (208 papers), Semiconductor materials and interfaces (102 papers), Silicon and Solar Cell Technologies (87 papers), Integrated Circuits and Semiconductor Failure Analysis (83 papers), Advancements in Semiconductor Devices and Circuit Design (77 papers), Copper Interconnects and Reliability (52 papers), Nanowire Synthesis and Applications (42 papers) and Semiconductor Quantum Structures and Devices (39 papers). The work is most often cited by research in Structural Biology (225 citations), Electrical and Electronic Engineering (6.3k citations), Atomic and Molecular Physics, and Optics (2.6k citations), Materials Chemistry (3.0k citations) and Electronic, Optical and Magnetic Materials (1.0k citations). H. Bender has collaborated with scholars based in Belgium, United States and Germany. Frequent co-authors include Wilfried Vandervorst, Olivier Richard, Matty Caymax, Marc Heyns, Paola Favia, Roger Loo, Thierry Conard, M. Jurczak, Karen Maex and Umberto Celano. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Microelectronic Engineering, Journal of The Electrochemical Society and Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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