D. Mocuta

3.4k citations

91 papers · 1.7k · h-index 23

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces
- Advanced Chemical Physics Studies

Papers in

Electrical and Electronic Engineering 70
- Semiconductor materials and devices 54
- Advancements in Semiconductor Devices and Circuit Design 44
- Integrated Circuits and Semiconductor Failure Analysis 22
- Ferroelectric and Negative Capacitance Devices 16
Atomic and Molecular Physics, and Optics 35
- Advanced Chemical Physics Studies 15
- Semiconductor materials and interfaces 12
- Spectroscopy and Quantum Chemical Studies 7

Co-authors: Joachim Ahner (15 shared papers)John T. Yates (15 shared papers)Naoto Horiguchi (33 shared papers)Nadine Collaert (27 shared papers)Hans Mertens (8 shared papers)A. Mocuta (11 shared papers)Julien Ryckaert (8 shared papers)Rogier Baert (4 shared papers)
Journals: IEEE Transactions on Electron Devices (6 papers)Surface Science (5 papers)IEEE Electron Device Letters (5 papers)The Journal of Chemical Physics (4 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (4 papers)
Partner nations: Belgium United States China

In The Last Decade

D. Mocuta

91 papers receiving 1.6k citations

Peers

Countries citing papers authored by D. Mocuta

Since Specialization

Citations

This map shows the geographic impact of D. Mocuta's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Mocuta with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Mocuta more than expected).

Fields of papers citing papers by D. Mocuta

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Mocuta. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Mocuta. The network helps show where D. Mocuta may publish in the future.

Co-authors

The 25 scholars most cited alongside D. Mocuta, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Mocuta Line = papers co-authored together D. Mocuta links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 91 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	The Complementary FET (CFET) for CMOS scaling beyond N3 Julien Ryckaert, P. Schuddinck, Pieter Weckx, G. Bouche, Benjamin Vincent, Jake Smith, Yasser Sherazi, A. Mallik, Hans Mertens, S. Demuynck, Trong Huynh-Bao, A. Veloso, Naoto Horiguchi, A. Mocuta, D. Mocuta, Juergen Boemmels	2018	159
2	Impact of Wire Geometry on Interconnect <italic>RC</italic> and Circuit Delay IEEE Transactions on Electron Devices ·Ivan Ciofi, Antonino Contino, Philippe Roussel, Rogier Baert, Victor-H. Vega-Gonzalez, Kristof Croes, Mustafa Badaroglu, Christopher J. Wilson, Praveen Raghavan, A. Mercha, Diederik Verkest, G. Groeseneken, D. Mocuta, Aaron Thean	2016	98
3	Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom? Japanese Journal of Applied Physics ·Kenji Ishikawa, Kazuhiro Karahashi, Tatsuo Ishijima, Sung‐Il Cho, Simon D. Elliott, Dennis M. Hausmann, D. Mocuta, Aaron G. Wilson, Keizo Kinoshita	2018	88
4	Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors with Reduced Vertical Nanowires Separation, New Work Function Metal Gate Solutions, and DC/AC Performance Optimization R. Ritzenthaler, Hans Mertens, V. Peña, G. Santoro, Adrian Chasin, Karine Kenis, K. Devriendt, G. Mannaert, Harold Dekkers, Aayushi Dangol, Yongjing Lin, S. Sun, Z. Chen, M. Kim, J. Machillot, Jérôme Mitard, N. Yoshida, N. Kim, D. Mocuta, Naoto Horiguchi	2018	81
5	Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires M. Garcia Bardon, Yasser Sherazi, P. Schuddinck, Doyoung Jang, Dmitry Yakimets, Peter Debacker, Rogier Baert, Hans Mertens, Mustafa Badaroglu, A. Mocuta, Naoto Horiguchi, D. Mocuta, Prasanth Raghavan, Julien Ryckaert, A. Spessot, Diederik Verkest, An Steegen	2016	56
6	Modeling of Via Resistance for Advanced Technology Nodes IEEE Transactions on Electron Devices ·Ivan Ciofi, Philippe Roussel, Yves Saad, Victor Moroz, Chia-Ying Hu, Rogier Baert, Kristof Croes, Antonino Contino, K. Vandersmissen, Weimin Gao, Philippe Matagne, Mustafa Badaroglu, Christopher J. Wilson, D. Mocuta, Zsolt Tökei	2017	51
7	RC Benefits of Advanced Metallization Options IEEE Transactions on Electron Devices ·Ivan Ciofi, Philippe Roussel, Rogier Baert, Antonino Contino, Anshul Gupta, Kristof Croes, Christopher J. Wilson, D. Mocuta, Zsolt Tökei	2019	45
8	Adsorbate–adsorbate repulsions—the coverage dependence of the adsorption structure of CO on Cu(110) as studied by electron-stimulated desorption ion angular distribution The Journal of Chemical Physics ·Joachim Ahner, D. Mocuta, R. D. Ramsier, John T. Yates	1996	45
9	InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature Applied Physics Letters ·A. Alian, Y. Mols, Caio Cesar Mendes Bordallo, Devin Verreck, Anne S. Verhulst, A. Vandooren, R. Rooyackers, Paula Ghedini Der Agopian, João Antônio Martino, A. Thean, Dennis Lin, D. Mocuta, Nadine Collaert	2016	43
10	(Invited) Selective Epitaxial Growth of High-P Si:P for Source/Drain Formation in Advanced Si nFETs ECS Transactions ·Erik Rosseel, Sathish Kumar Dhayalan, Andriy Hikavyy, Roger Loo, Harald B. Profijt, David Kohen, Stefan Kubicek, T. Chiarella, Hao Yu, Naoto Horiguchi, D. Mocuta, Kathy Barla, Aaron Thean, Gregory M. Bartlett, Joe Margetis, Nupur Bhargava, John Tolle	2016	40
11	Tunneling Transistors Based on MoS₂/MoTe₂ Van der Waals Heterostructures IEEE Journal of the Electron Devices Society ·Yashwanth Balaji, D. Mocuta, G. Groeseneken, Quentin Smets, César Javier Lockhart de la Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis Lin, Cedric Huyghebaert, Iuliana Radu	2018	40
12	Holisitic device exploration for 7nm node Prasanth Raghavan, M. Garcia Bardon, Doyoung Jang, P. Schuddinck, Dmitry Yakimets, Julien Ryckaert, A. Mercha, Naoto Horiguchi, Nadine Collaert, A. Mocuta, D. Mocuta, Zs. Tôkei, Diederik Verkest, Aaron Thean, An Steegen	2015	39
13	Adsorption and electron-stimulated dissociation of ammonia on Cu(110): an ESDIAD study Surface Science ·D. Mocuta, Joachim Ahner, John T. Yates	1997	39
14	The impact of sequential-3D integration on semiconductor scaling roadmap VUBIR (Vrije Universiteit Brussel) ·A. Mallik, A. Vandooren, Liesbeth Witters, A. Walke, J. Franco, Yasser Sherazi, Pieter Weckx, Dmitry Yakimets, M. Garcia Bardon, Bertrand Parvais, Peter Debacker, Bon Woong Ku, Sung Kyu Lim, A. Mocuta, D. Mocuta, Julien Ryckaert, Nadine Collaert, Prasanth Raghavan	2017	38
15	Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect Liesbeth Witters, Jérôme Mitard, Roger Loo, S. Demuynck, Soon Aik Chew, T. Schram, (unknown), Andriy Hikavyy, Jianwu Sun, Alexey Milenin, Hans Mertens, C. Vrancken, Paola Favia, Marc Schaekers, H. Bender, Naoto Horiguchi, R. Langer, K. Barla, D. Mocuta, Nadine Collaert, A. V-Y. Thean	2015	37
16	TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ cm2 Contact Resistivities to p-SiGe IEEE Transactions on Electron Devices ·Hao Yu, Marc Schaekers, Jian Zhang, Lin‐Lin Wang, Jean-Luc Everaert, Naoto Horiguchi, Yu-Long Jiang, D. Mocuta, Nadine Collaert, K. De Meyer	2017	34
17	Processing Technologies for Advanced Ge Devices ECS Journal of Solid State Science and Technology ·Roger Loo, Andriy Hikavyy, Liesbeth Witters, Andreas Schulze, Hiroaki Arimura, Daire Cott, Jérôme Mitard, Clément Porret, Hans Mertens, Paul Ryan, J. Wall, Kevin Matney, Matthew Wormington, Paola Favia, Olivier Richard, H. Bender, Aaron Thean, Naoto Horiguchi, D. Mocuta, Nadine Collaert	2016	31
18	Sub-10⁻⁹ Ω·cm² contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation J-L. Everaert, Marc Schaekers, Hao Yu, L.-L. Wang, Andriy Hikavyy, L. Daté, J. del Agua Borniquel, K. Hollar, Fareen Adeni Khaja, W. Aderhold, A. J. Mayur, J. Y. Lee, H. van Meer, Yu-Long Jiang, K. De Meyer, D. Mocuta, Naoto Horiguchi	2017	28
19	Junctionless versus inversion-mode lateral semiconductor nanowire transistors Journal of Physics Condensed Matter ·A. Veloso, Philippe Matagne, Eddy Simoen, B. Kaczer, Geert Eneman, Hans Mertens, Dmitry Yakimets, Bertrand Parvais, D. Mocuta	2018	28
20	Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon Scientific Reports ·Yu Qiu, H. Bender, Olivier Richard, M.-S. Kim, Els Van Besien, Ingrid Vos, Muriel de Potter de ten Broeck, D. Mocuta, Wilfried Vandervorst	2015	27

About D. Mocuta

D. Mocuta is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry and Condensed Matter Physics, having authored 91 papers that have together received 1.7k indexed citations. Recurring topics across this work include Semiconductor materials and devices (54 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers), Integrated Circuits and Semiconductor Failure Analysis (22 papers), Ferroelectric and Negative Capacitance Devices (16 papers), Advanced Chemical Physics Studies (15 papers), Semiconductor materials and interfaces (12 papers), Nanowire Synthesis and Applications (12 papers) and Spectroscopy and Quantum Chemical Studies (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.4k citations), Atomic and Molecular Physics, and Optics (508 citations), Electronic, Optical and Magnetic Materials (149 citations), Hardware and Architecture (51 citations) and Surfaces, Coatings and Films (50 citations). D. Mocuta has collaborated with scholars based in Belgium, United States and China. Frequent co-authors include Joachim Ahner, John T. Yates, Naoto Horiguchi, Nadine Collaert, Hans Mertens, A. Mocuta, Julien Ryckaert, Rogier Baert, R. D. Ramsier and Christopher J. Wilson. Their work appears in journals such as IEEE Transactions on Electron Devices, Surface Science, IEEE Electron Device Letters, The Journal of Chemical Physics and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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