K. Rim

2.7k citations

41 papers · 1.7k · h-index 17

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
Structural Biology top 10%

Papers in

Electrical and Electronic Engineering 40
- Semiconductor materials and devices 35
- Advancements in Semiconductor Devices and Circuit Design 33
- Integrated Circuits and Semiconductor Failure Analysis 14
- Ferroelectric and Negative Capacitance Devices 4
- Silicon Carbide Semiconductor Technologies 4
- Low-power high-performance VLSI design 4
- Radio Frequency Integrated Circuit Design 3
Biomedical Engineering 5
- Nanowire Synthesis and Applications 3

Co-authors: Min Yang (5 shared papers)M. Ieong (8 shared papers)B. Doris (5 shared papers)J. Kedzierski (4 shared papers)Massimo V. Fischetti (3 shared papers)Zhibin Ren (4 shared papers)P. M. Solomon (1 shared paper)K.A. Jenkins (2 shared papers)
Journals: IEEE Electron Device Letters (3 papers)IEEE Transactions on Electron Devices (2 papers)Applied Surface Science (1 paper)Journal of Applied Physics (1 paper)Science (1 paper)
Partner nations: United States South Korea United Kingdom

In The Last Decade

K. Rim

39 papers receiving 1.6k citations

Peers

Countries citing papers authored by K. Rim

Since Specialization

Citations

This map shows the geographic impact of K. Rim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Rim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Rim more than expected).

Fields of papers citing papers by K. Rim

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Rim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Rim. The network helps show where K. Rim may publish in the future.

Co-authors

The 25 scholars most cited alongside K. Rim, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K. Rim Line = papers co-authored together K. Rim links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Silicon Device Scaling to the Sub-10-nm Regime Science ·M. Ieong, B. Doris, J. Kedzierski, K. Rim, Min Yang	2004	466
2	Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness Journal of Applied Physics ·Massimo V. Fischetti, Zhibin Ren, P. M. Solomon, Min Yang, K. Rim	2003	369
3	Measurement of the effect of self-heating in strained-silicon MOSFETs IEEE Electron Device Letters ·K.A. Jenkins, K. Rim	2002	125
4	Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs K. Rim, K. Chan, L. Shi, D. Boyd, J. A. Ott, N. Klymko, F. Cardone, L. Tai, Steven J. Koester, M. Cobb, D. Canaperi, B. To, Elizabeth A. Duch, I. Babich, R. Carruthers, P. Saunders, George Walker, Y. Zhang, M. Steen, M. Ieong	2004	104
5	Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs K. Rim, J. O. Chu, H. Chen, K.A. Jenkins, T. Kanarsky, K. Lee, A. Mocuta, Huilong Zhu, R. Roy, J. Newbury, J. A. Ott, K. Petrarca, P. M. Mooney, D. Lacey, Steven J. Koester, K. Chan, D. Boyd, M. Ieong, H.‐S. Philip Wong	2003	100
6	Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs K. Rim, (unknown), M. Longstreet, A. Mocuta, J. Cai	2003	66
7	Channel doping impact on FinFETs for 22nm and beyond C.-H. Lin, R. Kambhampati, Robert J. Miller, Terence B. Hook, A. Bryant, Wilfried Haensch, P. Oldiges, Isaac Lauer, T. Yamashita, V. Basker, T. Standaert, K. Rim, E. Leobandung, H. Bu, Mukesh Khare	2012	52
8	Transconductance enhancement in deep submicron strained Si n-MOSFETs K. Rim, Judy L. Hoyt, J. F. Gibbons	2002	47
9	The revolution in SiGe: impact on device electronics Applied Surface Science ·D.L. Harame, Steven J. Koester, G. Freeman, P Cottrel, K. Rim, G. Dehlinger, D. Ahlgren, James Dunn, D. Greenberg, Alvin Joseph, F. Anderson, Jae-Sung Rieh, St. Onge, Douglas Coolbaugh, V. Ramachandran, John D. Cressler, S. Subbanna	2004	40
10	Transistor Mismatch Properties in Deep-Submicrometer CMOS Technologies IEEE Transactions on Electron Devices ·Xiaobin Yuan, Takashi Shimizu, U. Mahalingam, Jeffrey S. Brown, Kazi Z. Habib, D. Tekleab, Tai-Chi Su, Satadru Sarkar, C.M. Olsen, Hyun-Woo Lee, Li-Hong Pan, Terence B. Hook, Jin‐Ping Han, Jae-Eun Park, Myung-Hee Na, K. Rim	2011	37
11	80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/ gate dielectric for ULSI applications D. A. Buchanan, E. P. Gusev, E. Cartier, H. Schmidt, K. Rim, M. Gribelyuk, A. Mocuta, A. Ajmera, M. Copel, Supratik Guha, N. A. Bojarczuk, Agnese Callegari, C. D’Emic, P. Kozlowski, K. Chan, R.J. Fleming, P. Jamison, I. Brown, R. A. Arndt	2002	34
12	Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy Yaocheng Liu, Oleg Gluschenkov, Jinghong Li, Anita Madan, Ahmet S. Özcan, Byeong Kim, (unknown), Ashima Chakravarti, K. Chan, C. Lavoie, Irene Popova, Teresa Pinto, N. Rovedo, Zhijiong Luo, Rainer Loesing, W.K. Henson, K. Rim	2007	30
13	Mobility enhancement in strained Si NMOSFETs with HfO/sub 2/ gate dielectrics K. Rim, E. P. Gusev, C. D’Emic, T. Kanarsky, H. Chen, J. O. Chu, J. A. Ott, K. Chan, D. Boyd, V. Mazzeo, B.H. Lee, A. Mocuta, J.J. Welser, Shlomo Cohen, M. Leong, H.‐S. Philip Wong	2003	21
14	An array of 4 complementary LC-VCOs with 51.4% W-Band coverage in 32nm SOI CMOS D.D. Kim, Jonghae Kim, Choongyeun Cho, Jean‐Olivier Plouchart, M. Kumar, Woo-Hyeong Lee, K. Rim	2009	21
15	Electrical characterization of Al₂O₃ n-channel MOSFETs with aluminum gates IEEE Electron Device Letters ·L.-Å. Ragnarsson, Supratik Guha, N. A. Bojarczuk, E. Cartier, Massimo V. Fischetti, K. Rim, J. Karasiński	2001	19
16	Design and Fabrication of MOSFETs with a Reverse Embedded SiGe (Rev. e-SiGe) Structure R. A. Donaton, D. Chidambarrao, J. Johnson, P. Chang, Yaocheng Liu, W.K. Henson, J. Holt, Xi Li, Jinghong Li, A. Domenicucci, Anita Madan, K. Rim, C. Wann	2006	16
17	3D stackable 32nm High-K/Metal Gate SOI embedded DRAM prototype John Golz, John Safran, Bishan He, Derek Leu, Ming Yin, Todd Weaver, Adis Vehabovic, Yan Sun, Alberto Cestero, Ben Himmel, Gary Maier, C. Kothandaraman, Daniel Fainstein, J. Barth, Norman Robson, T. Kirihata, K. Rim, Subramanian S. Iyer	2011	16
18	(Invited) Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations ECS Transactions ·Darsen D. Lu, P. Morin, Bhagawan Sahu, Terence B. Hook, Pouya Hashemi, A. Scholze, Bomsoo Kim, Pranita Kerber, A. Khakifirooz, P. Oldiges, K. Rim, B. Doris	2014	14
19	SOI CMOS Technology with 360GHz f<inf>T</inf> NFET, 260GHz f<inf>T</inf> PFET, and Record Circuit Performance for Millimeter-Wave Digital and Analog System-on-Chip Applications Sungjae Lee, Jonghae Kim, Daeik Kim, B. Jagannathan, Choongyeun Cho, Jim Johnson, B. Dufrene, N. Zamdmer, L. Wagner, R. Williams, David Fried, K. Rim, John J. Pekarik, S. Springer, Jean‐Olivier Plouchart, G. Freeman	2007	14
20	Strained Si surface channel MOSFETs for high-performance CMOS technology K. Rim	2002	9

About K. Rim

K. Rim is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Automotive Engineering, Atomic and Molecular Physics, and Optics and Instrumentation, having authored 41 papers that have together received 1.7k indexed citations. Recurring topics across this work include Semiconductor materials and devices (35 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers), Integrated Circuits and Semiconductor Failure Analysis (14 papers), Ferroelectric and Negative Capacitance Devices (4 papers), Silicon Carbide Semiconductor Technologies (4 papers), Low-power high-performance VLSI design (4 papers), Nanowire Synthesis and Applications (3 papers) and Radio Frequency Integrated Circuit Design (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.5k citations), Structural Biology (13 citations), Atomic and Molecular Physics, and Optics (283 citations), Biomedical Engineering (387 citations) and Materials Chemistry (370 citations). K. Rim has collaborated with scholars based in United States, South Korea and United Kingdom. Frequent co-authors include Min Yang, M. Ieong, B. Doris, J. Kedzierski, Massimo V. Fischetti, Zhibin Ren, P. M. Solomon, K.A. Jenkins, A. Mocuta and K. Chan. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Surface Science, Journal of Applied Physics and Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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