Benjamin Vincent

2.3k citations

87 papers · 1.5k · h-index 20

Impact in

Electrical and Electronic Engineering top 5%
- Photonic and Optical Devices
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Photonic Communication Systems
- Thin-Film Transistor Technologies
- Semiconductor Lasers and Optical Devices
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 78
- Semiconductor materials and devices 49
- Advancements in Semiconductor Devices and Circuit Design 44
- Photonic and Optical Devices 27
- Integrated Circuits and Semiconductor Failure Analysis 15
- Advanced Photonic Communication Systems 6
Biomedical Engineering 29
- Nanowire Synthesis and Applications 20
- Advanced Surface Polishing Techniques 7

Co-authors: Roger Loo (41 shared papers)Federica Gencarelli (20 shared papers)Matty Caymax (27 shared papers)Wilfried Vandervorst (15 shared papers)Marc Heyns (12 shared papers)Yosuke Shimura (11 shared papers)H. Bender (17 shared papers)A. Vantomme (9 shared papers)
Journals: Solid-State Electronics (5 papers)Thin Solid Films (4 papers)ECS Journal of Solid State Science and Technology (3 papers)Applied Physics Letters (3 papers)Journal of Applied Physics (2 papers)
Partner nations: Belgium France United States

In The Last Decade

Benjamin Vincent

80 papers receiving 1.5k citations

Peers

Countries citing papers authored by Benjamin Vincent

Since Specialization

Citations

This map shows the geographic impact of Benjamin Vincent's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Benjamin Vincent with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Benjamin Vincent more than expected).

Fields of papers citing papers by Benjamin Vincent

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Benjamin Vincent. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Benjamin Vincent. The network helps show where Benjamin Vincent may publish in the future.

Co-authors

The 25 scholars most cited alongside Benjamin Vincent, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Benjamin Vincent Line = papers co-authored together Benjamin Vincent links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 87 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition Applied Physics Letters ·Benjamin Vincent, Federica Gencarelli, H. Bender, Clément Merckling, Bastien Douhard, Dirch Hjorth Petersen, Ole Hansen, Henrik H. Henrichsen, Johan Meersschaut, Wilfried Vandervorst, Marc Heyns, Roger Loo, Matty Caymax	2011	159
2	GeSn/Ge heterostructure short-wave infrared photodetectors on silicon Optics Express ·Alban Gassenq, Federica Gencarelli, Joris Van Campenhout, Yosuke Shimura, Roger Loo, G. Narcy, Benjamin Vincent, Günther Roelkens	2012	154
3	The Complementary FET (CFET) for CMOS scaling beyond N3 Julien Ryckaert, P. Schuddinck, Pieter Weckx, G. Bouche, Benjamin Vincent, Jake Smith, Yasser Sherazi, A. Mallik, Hans Mertens, S. Demuynck, Trong Huynh-Bao, A. Veloso, Naoto Horiguchi, A. Mocuta, D. Mocuta, Juergen Boemmels	2018	147
4	Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn ECS Journal of Solid State Science and Technology ·Federica Gencarelli, Benjamin Vincent, J. Demeulemeester, A. Vantomme, Alain Moussa, Alexis Franquet, A. Kumar, H. Bender, Johan Meersschaut, Wilfried Vandervorst, Roger Loo, Matty Caymax, K. Temst, Marc Heyns	2013	106
5	Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors Microelectronic Engineering ·Benjamin Vincent, Yosuke Shimura, Shotaro Takeuchi, Takashi Nishimura, Geert Eneman, Andrea Firrincieli, J. Demeulemeester, A. Vantomme, Trudo Clarysse, Osamu Nakatsuka, Shigeaki Zaima, J. Dekoster, Matty Caymax, Roger Loo	2010	91
6	Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6 Thin Solid Films ·Federica Gencarelli, Benjamin Vincent, Laurent Souriau, Olivier Richard, Wilfried Vandervorst, Roger Loo, Matty Caymax, Marc Heyns	2011	70
7	Challenges and opportunities in advanced Ge pMOSFETs Materials Science in Semiconductor Processing ·Eddy Simoen, Jérôme Mitard, Geert Hellings, Geert Eneman, Brice De Jaeger, Liesbeth Witters, Benjamin Vincent, Roger Loo, Annelies Delabie, Sonja Sioncke, Matty Caymax, Cor Claeys	2012	64
8	High quality Germanium-On-Insulator wafers with excellent hole mobility Solid-State Electronics ·Quang Trung Nguyen, J.F. Damlencourt, Benjamin Vincent, L. Clavelier, Y. Morand, Paulo Gentil, S. Cristoloveanu	2007	44
9	A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options Done by Virtual Fabrication IEEE Journal of the Electron Devices Society ·Benjamin Vincent, Juergen Boemmels, Julien Ryckaert, Joseph Ervin	2020	40
10	Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique Applied Physics Letters ·Benjamin Vincent, J.-F. Damlencourt, V. Delaye, R. Gassilloud, L. Clavelier, Y. Morand	2007	35
11	Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method Shashank Gupta, Benjamin Vincent, Bin Yang, Dennis Lin, Federica Gencarelli, Jyi-Tsong Lin, R. Chen, Olivier Richard, H. Bender, Blanka Magyari-Köpe, Matty Caymax, J. Dekoster, Yoshio Nishi, Krishna C. Saraswat	2012	33
12	Fabrication of SiGe-on-insulator substrates by a condensation technique: an experimental and modelling study Semiconductor Science and Technology ·Benjamin Vincent, J.-F. Damlencourt, P. Rivallin, E. Nolot, Christophe Licitra, Y. Morand, L. Clavelier	2007	33
13	Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond Geert Eneman, D.P. Brunco, Liesbeth Witters, Benjamin Vincent, Paola Favia, Andriy Hikavyy, A. De Keersgieter, Jérôme Mitard, Roger Loo, A. Veloso, Olivier Richard, H. Bender, S. H. Lee, Mark van Dal, Nafees Kabir, Wilfried Vandervorst, Matty Caymax, Naoto Horiguchi, Nadine Collaert, Aaron Thean	2012	29
14	Ge1−Sn stressors for strained-Ge CMOS Solid-State Electronics ·Shotaro Takeuchi, Yosuke Shimura, Takashi Nishimura, Benjamin Vincent, Geert Eneman, Trudo Clarysse, J. Demeulemeester, A. Vantomme, J. Dekoster, Matty Caymax, Roger Loo, Akira Sakai, Osamu Nakatsuka, Shigeaki Zaima	2011	29
15	Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1−xSnx films Journal of Applied Physics ·Federica Gencarelli, D. Grandjean, Yosuke Shimura, Benjamin Vincent, Dipanjan Banerjee, A. Vantomme, Wilfried Vandervorst, Roger Loo, Marc Heyns, K. Temst	2015	28
16	GeSn channel nMOSFETs: Material potential and technological outlook Shubhanshu Gupta, Benjamin Vincent, Dennis Lin, Marika Gunji, Andrea Firrincieli, Federica Gencarelli, Blanka Magyari-Köpe, Bin Yang, Bastien Douhard, J. Delmotte, Alexis Franquet, Matty Caymax, J. Dekoster, Yoshio Nishi, Krishna C. Saraswat	2012	27
17	Ge_1-xSn_xMaterials: Challenges and Applications ECS Journal of Solid State Science and Technology ·Roger Loo, Benjamin Vincent, Federica Gencarelli, Clément Merckling, Archana Praveen Kumar, Geert Eneman, Liesbeth Witters, Wilfried Vandervorst, Matty Caymax, Marc Heyns, Aaron Thean	2012	26
18	Selective Growth of Strained Ge Channel on Relaxed SiGe Buffer in Shallow Trench Isolation for High Mobility Ge Planar and Fin p-FET ECS Transactions ·Benjamin Vincent, Liesbeth Witters, Olivier Richard, Andriy Hikavyy, H. Bender, Roger Loo, Matty Caymax, Aaron Thean	2013	20
19	Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions Solid-State Electronics ·Benjamin Vincent, Roger Loo, W. Vandervorst, J. Delmotte, Bastien Douhard, Ventsislav K. Valev, Maarten Vanbel, Thierry Verbiest, Jens Rip, Bert Brijs, Thierry Conard, Chris Claypool, Shotaro Takeuchi, Shigeaki Zaima, Jérôme Mitard, Brice De Jaeger, J. Dekoster, Matty Caymax	2011	20
20	The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies? Materials Science in Semiconductor Processing ·Benjamin Vincent, J.-F. Damlencourt, Y. Morand, A. Pouydebasque, C. Le Royer, L. Clavelier, N. Dechoux, P. Rivallin, T. T. T. Nguyên, S. Cristoloveanu, Y. Campidelli, D. Rouchon, Michel Mermoux, S. Deleonibus, D. Bensahel, T. Billon	2008	19

About Benjamin Vincent

Benjamin Vincent is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry and Mechanical Engineering, having authored 87 papers that have together received 1.5k indexed citations. Recurring topics across this work include Semiconductor materials and devices (49 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers), Photonic and Optical Devices (27 papers), Nanowire Synthesis and Applications (20 papers), Integrated Circuits and Semiconductor Failure Analysis (15 papers), Semiconductor Quantum Structures and Devices (9 papers), Advanced Surface Polishing Techniques (7 papers) and Advanced Photonic Communication Systems (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.4k citations), Atomic and Molecular Physics, and Optics (473 citations), Biomedical Engineering (436 citations), Materials Chemistry (212 citations) and Structural Biology (5 citations). Benjamin Vincent has collaborated with scholars based in Belgium, France and United States. Frequent co-authors include Roger Loo, Federica Gencarelli, Matty Caymax, Wilfried Vandervorst, Marc Heyns, Yosuke Shimura, H. Bender, A. Vantomme, Geert Eneman and Julien Ryckaert. Their work appears in journals such as Solid-State Electronics, Thin Solid Films, ECS Journal of Solid State Science and Technology, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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