Frederik Leys

1.4k citations

60 papers · 851 · h-index 18

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Photonic and Optical Devices
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 40
- Semiconductor materials and devices 34
- Advancements in Semiconductor Devices and Circuit Design 27
- Integrated Circuits and Semiconductor Failure Analysis 10
- Silicon and Solar Cell Technologies 9
Atomic and Molecular Physics, and Optics 19
- Semiconductor materials and interfaces 10
- Quantum, superfluid, helium dynamics 4

Co-authors: Marc Meuris (18 shared papers)Matty Caymax (25 shared papers)Roger Loo (29 shared papers)Brice De Jaeger (15 shared papers)Marc Heyns (13 shared papers)Gillis Winderickx (6 shared papers)B. Kaczer (8 shared papers)Wilfried Vandervorst (10 shared papers)
Journals: Thin Solid Films (6 papers)Microelectronic Engineering (3 papers)Applied Physics Letters (2 papers)Physical review. B, Condensed matter (2 papers)ECS Transactions (10 papers)
Partner nations: Belgium United Kingdom United States

In The Last Decade

Frederik Leys

57 papers receiving 813 citations

Peers

Countries citing papers authored by Frederik Leys

Since Specialization

Citations

This map shows the geographic impact of Frederik Leys's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Frederik Leys with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Frederik Leys more than expected).

Fields of papers citing papers by Frederik Leys

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Frederik Leys. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Frederik Leys. The network helps show where Frederik Leys may publish in the future.

Co-authors

The 25 scholars most cited alongside Frederik Leys, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Frederik Leys Line = papers co-authored together Frederik Leys links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 60 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	High performance Ge pMOS devices using a Si-compatible process flow Paul Zimmerman, G. Nicholas, Brice De Jaeger, B. Kaczer, A. Stesmans, L-A Ragnarsson, D.P. Brunco, Frederik Leys, Matty Caymax, Gillis Winderickx, Karl Opsomer, Marc Meuris, Marc Heyns	2006	86
2	Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates Microelectronic Engineering ·Brice De Jaeger, Renaud Bonzom, Frederik Leys, Olivier Richard, Jan Van Steenbergen, Gillis Winderickx, E. Van Moorhem, G. Raskin, F. Letertre, T. Billon, Marc Meuris, Marc Heyns	2005	80
3	Record I<inf>ON</inf>/I<inf>OFF</inf> performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability Jérôme Mitard, Brice De Jaeger, Frederik Leys, Geert Hellings, Koen Martens, Geert Eneman, D.P. Brunco, Roger Loo, Jason Lin, Denis Shamiryan, T. Vandeweyer, Gillis Winderickx, Evi Vrancken, C.H. Yu, K. De Meyer, Matty Caymax, L. Pantisano, Marc Meuris, Marc Heyns	2008	43
4	Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality Materials Science in Semiconductor Processing ·Frederik Leys, Renaud Bonzom, B. Kaczer, Tom Janssens, Wilfried Vandervorst, Brice De Jaeger, Jan Van Steenbergen, Koen Martens, David Hellin, Jens Rip, Gabriela Dilliway, Annelies Delabie, Paul Zimmerman, Michel Houssa, Antoon Theuwis, Roger Loo, Marc Meuris, Matty Caymax, Marc Heyns	2006	41
5	Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI Symposium on VLSI Technology ·Jérôme Mitard, Christopher G. Shea, B. DeJaeger, A. Pristera, G. Wang, Michel Houssa, Geert Eneman, Geert Hellings, W.E. Wang, Jason Lin, Frederik Leys, Roger Loo, Gillis Winderickx, Evi Vrancken, A. Stesmans, Kristin DeMeyer, Matty Caymax, L. Pantisano, Marc Meuris, Marc Heyns	2006	35
6	The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge pMOSFETs Journal of The Electrochemical Society ·Matty Caymax, Frederik Leys, Jéro me Mitard, Koen Martens, Lijun Yang, Geoffrey Pourtois, Wilfried Vandervorst, Marc Meuris, Roger Loo	2009	35
7	Germanium: The Past and Possibly a Future Material for Microelectronics ECS Transactions ·D.P. Brunco, Brice De Jaeger, Geert Eneman, A. Satta, V. Terzieva, Laurent Souriau, Frederik Leys, Geoffrey Pourtois, Michel Houssa, Karl Opsomer, G. Nicholas, Marc Meuris, Marc Heyns	2007	31
8	Electrical and reliability characterization of metal-gate/HfO2/Ge FET’s with Si passivation Microelectronic Engineering ·B. Kaczer, Brice De Jaeger, G. Nicholas, Koen Martens, R. Degraeve, Michel Houssa, Geoffrey Pourtois, Frederik Leys, Marc Meuris, G. Groeseneken	2007	30
9	25% drive current improvement for p-type multiple gate FET (MuGFET) devices by the introduction of recessed Si/sub 0.8/Ge/sub 0.2/ in the source and drain regions. Peter Verheyen, Nadine Collaert, R. Rooyackers, Roger Loo, Denis Shamiryan, A. De Keersgieter, Geert Eneman, Frederik Leys, Abhisek Dixit, M. W. Goodwin, Yong Sik Yim, Matty Caymax, K. De Meyer, P. Absil, M. Jurczak, S. Biesemans	2005	30
10	Selective Epitaxial Growth of Germanium on Si Wafers with Shallow Trench Isolation: An Approach for Ge Virtual Substrates ECS Transactions ·Gang Wang, Frederik Leys, Laurent Souriau, Roger Loo, Matty Caymax, D.P. Brunco, J. Geypen, H. Bender, Marc Meuris, Wilfried Vandervorst, Marc Heyns	2008	27
11	Accurate Sheet Resistance Measurement on Ultra-Shallow Profiles MRS Proceedings ·Trudo Clarysse, Alain Moussa, Frederik Leys, Roger Loo, Wilfried Vandervorst, Mark C. Benjamin, Robert Hillard, Vladimir Faifer, Michael Current, Rong Lin, Dirch Hjorth Petersen	2006	26
12	In Situ Phosphorus Doping of Germanium by APCVD ECS Transactions ·Gabriela Dilliway, Ruud van den BOOM, Alain Moussa, Frederik Leys, Benny Van Daele, Brigitte Parmentier, Trudo Clarysse, Eddy Simoen, Christophe Defranoux, M. Meuris, A. Benedetti, Olivier Richard, H. Bender	2006	26
13	Electronic Energy Spectrum of Two-Dimensional Solids and a Chain of C Atoms from a Quantum Network Model Journal of Mathematical Chemistry ·C. Amovilli, Frederik Leys, N. H. March	2004	20
14	Impact of Epi-Si growth temperature on Ge-pFET performance Jérôme Mitard, Koen Martens, B. DeJaeger, J. Franco, Christopher G. Shea, Chelsea Plourde, Frederik Leys, Roger Loo, Geert Hellings, Geert Eneman, Wei Wang, Jason Lin, B. Kaczer, Kristin DeMeyer, Thomas Hoffmann, S. DeGendt, Matty Caymax, Marc Meuris, Marc Heyns	2009	20
15	Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth Thin Solid Films ·Nadine Collaert, R. Rooyackers, Andriy Hikavyy, Abhisek Dixit, Frederik Leys, P. Verheyen, Roger Loo, M. Jurczak, S. Biesemans	2008	19
16	Low Temperature Pre-Epi Treatment: Critical Parameters to Control Interface Contamination Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Roger Loo, Andriy Hikavyy, Frederik Leys, M. Wada, Ken‐Ichi Sano, Brecht De Vos, Antoine Pacco, Mireia Bargalló González, Eddy Simoen, Peter Verheyen, Wendy Vanherle, Matty Caymax	2009	18
17	Vapor Phase Doping with N-type Dopant into Silicon by Atmospheric Pressure Chemical Vapor Deposition ECS Transactions ·Shotaro Takeuchi, Ngoc Duy Nguyen, Frederik Leys, Roger Loo, Thierry Conard, Wilfried Vandervorst, Matty Caymax	2008	18
18	Threshold voltage shifts in Si passivated (100)Ge p-channel field effect transistors: Insights from first-principles modeling Applied Physics Letters ·Geoffrey Pourtois, Michel Houssa, Brice De Jaeger, B. Kaczer, Frederik Leys, Marc Meuris, Matty Caymax, G. Groeseneken, M. M. Heyns	2007	18
19	Experimental and theoretical study of Ge surface passivation Microelectronic Engineering ·Michel Houssa, G. Pourtois, B. Kaczer, Brice De Jaeger, Frederik Leys, Daniël Nelis, Kristof Paredis, A. Vantomme, Matty Caymax, Marc Meuris, Marc Heyns	2007	16
20	Epitaxy solutions for Ge MOS technology Thin Solid Films ·Frederik Leys, Renaud Bonzom, Roger Loo, Olivier Richard, Brice De Jaeger, Jan Van Steenbergen, Kristof Dessein, Thierry Conard, Jens Rip, H. Bender, W. Vandervorst, Marc Meuris, Matty Caymax	2005	16

About Frederik Leys

Frederik Leys is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry and Organic Chemistry, having authored 60 papers that have together received 851 indexed citations. Recurring topics across this work include Semiconductor materials and devices (34 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers), Integrated Circuits and Semiconductor Failure Analysis (10 papers), Semiconductor materials and interfaces (10 papers), Silicon and Solar Cell Technologies (9 papers), Nanowire Synthesis and Applications (7 papers), Quantum, superfluid, helium dynamics (4 papers) and Biomimetic flight and propulsion mechanisms (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (734 citations), Atomic and Molecular Physics, and Optics (239 citations), Biomedical Engineering (216 citations), Materials Chemistry (177 citations) and Condensed Matter Physics (25 citations). Frederik Leys has collaborated with scholars based in Belgium, United Kingdom and United States. Frequent co-authors include Marc Meuris, Matty Caymax, Roger Loo, Brice De Jaeger, Marc Heyns, Gillis Winderickx, B. Kaczer, Wilfried Vandervorst, Michel Houssa and N. H. March. Their work appears in journals such as Thin Solid Films, Microelectronic Engineering, Applied Physics Letters, Physical review. B, Condensed matter and ECS Transactions.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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