Matty Caymax

11.5k citations

473 papers · 9.3k · h-index 50

Impact in

Electrical and Electronic Engineering top 0.2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Photonic and Optical Devices
Atomic and Molecular Physics, and Optics top 0.5%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 438
- Semiconductor materials and devices 319
- Advancements in Semiconductor Devices and Circuit Design 168
- Silicon and Solar Cell Technologies 104
- Integrated Circuits and Semiconductor Failure Analysis 86
- Thin-Film Transistor Technologies 62
- Photonic and Optical Devices 52
Atomic and Molecular Physics, and Optics 160
- Semiconductor materials and interfaces 92
- Semiconductor Quantum Structures and Devices 55

Co-authors: Marc Heyns (151 shared papers)Marc Meuris (92 shared papers)Roger Loo (147 shared papers)Annelies Delabie (91 shared papers)Wilfried Vandervorst (96 shared papers)Michel Houssa (44 shared papers)Thierry Conard (75 shared papers)H. Bender (66 shared papers)
Journals: Applied Physics Letters (51 papers)Thin Solid Films (27 papers)Journal of The Electrochemical Society (25 papers)Microelectronic Engineering (17 papers)Journal of Applied Physics (16 papers)
Partner nations: Belgium United States Germany

In The Last Decade

Matty Caymax

457 papers receiving 9.1k citations

Peers

Countries citing papers authored by Matty Caymax

Since Specialization

Citations

This map shows the geographic impact of Matty Caymax's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Matty Caymax with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Matty Caymax more than expected).

Fields of papers citing papers by Matty Caymax

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Matty Caymax. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Matty Caymax. The network helps show where Matty Caymax may publish in the future.

Co-authors

The 25 scholars most cited alongside Matty Caymax, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Matty Caymax Line = papers co-authored together Matty Caymax links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 473 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide Applied Physics Letters ·Annelies Delabie, Florence Bellenger, Michel Houssa, Thierry Conard, Sven Van Elshocht, Matty Caymax, Marc Heyns, Marc Meuris	2007	246
2	Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition Applied Physics Letters ·Benjamin Vincent, Federica Gencarelli, H. Bender, Clément Merckling, Bastien Douhard, Dirch Hjorth Petersen, Ole Hansen, Henrik H. Henrichsen, Johan Meersschaut, Wilfried Vandervorst, Marc Heyns, Roger Loo, Matty Caymax	2011	169
3	Band alignment between (100)Si and complex rare earth∕transition metal oxides Applied Physics Letters ·V. V. Afanas’ev, A. Stesmans, Chao Zhao, Matty Caymax, T. Heeg, J. Schubert, Yufei Jia, Darrell G. Schlom, G. Lucovsky	2004	136
4	Germanium surface passivation and atomic layer deposition of high-kdielectrics—a tutorial review on Ge-based MOS capacitors Semiconductor Science and Technology ·Qi Xie, Shaoren Deng, Marc Schaekers, Dennis Lin, Matty Caymax, Annelies Delabie, Xin-Ping Qu, Yu-Long Jiang, Davy Deduytsche, Christophe Detavernier	2012	136
5	Hf O 2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition Applied Physics Letters ·A. Dimoulas, G. Mavrou, G. Vellianitis, E. K. Evangelou, Nikos Boukos, Michel Houssa, Matty Caymax	2005	135
6	Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy Journal of Applied Physics ·Riikka L. Puurunen, Wilfried Vandervorst, W.F.A. Besling, Olivier Richard, H. Bender, Thierry Conard, Chao Zhao, Annelies Delabie, Matty Caymax, Stefan De Gendt, Marc Heyns, M. Viitanen, M. de Ridder, Hidde H. Brongersma, Y. Tamminga, Thuy Xuan Huynh Dao, Toon de Win, Marcel A. Verheijen, M. Kaiser, M. Tuominen	2004	133
7	Ternary rare-earth metal oxide high-k layers on silicon oxide Applied Physics Letters ·Chao Zhao, T. Witters, Bert Brijs, H. Bender, Olivier Richard, Matty Caymax, T. Heeg, J. Schubert, V. V. Afanas’ev, A. Stesmans, Darrell G. Schlom	2005	120
8	Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth Nanotechnology ·Francesca Iacopi, Philippe M. Vereecken, Marc Schaekers, Matty Caymax, Nele Moelans, Bart Blanpain, Olivier Richard, Christophe Detavernier, Hefin Griffiths	2007	113
9	Passivation of Ge(100)∕GeO[sub 2]∕high-κ Gate Stacks Using Thermal Oxide Treatments Journal of The Electrochemical Society ·Florence Bellenger, Michel Houssa, Annelies Delabie, Valeri Afanasiev, Thierry Conard, Matty Caymax, Marc Meuris, K. De Meyer, Marc Heyns	2007	111
10	Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn ECS Journal of Solid State Science and Technology ·Federica Gencarelli, Benjamin Vincent, J. Demeulemeester, A. Vantomme, Alain Moussa, Alexis Franquet, A. Kumar, H. Bender, Johan Meersschaut, Wilfried Vandervorst, Roger Loo, Matty Caymax, K. Temst, Marc Heyns	2013	109
11	Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2 Applied Physics Letters ·Michel Houssa, Geoffrey Pourtois, Matty Caymax, Marc Meuris, M. M. Heyns, V. V. Afanas’ev, A. Stesmans	2008	103
12	Capacitance-voltage characterization of GaAs–Al2O3 interfaces Applied Physics Letters ·Guy Brammertz, H. C. Lin, Koen Martens, David Mercier, Sonja Sioncke, Annelies Delabie, W. E. Wang, Matty Caymax, Marc Meuris, Marc Heyns	2008	99
13	On the interface state density at In0.53Ga0.47As/oxide interfaces Applied Physics Letters ·Guy Brammertz, H. C. Lin, Matty Caymax, Marc Meuris, Marc Heyns, M. Passlack	2009	94
14	Site Selective Integration of III–V Materials on Si for Nanoscale Logic and Photonic Devices Crystal Growth & Design ·Mohanchand Paladugu, Clément Merckling, Roger Loo, Olivier Richard, H. Bender, J. Dekoster, Wilfried Vandervorst, Matty Caymax, Marc Heyns	2012	93
15	Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors Microelectronic Engineering ·Benjamin Vincent, Yosuke Shimura, Shotaro Takeuchi, Takashi Nishimura, Geert Eneman, Andrea Firrincieli, J. Demeulemeester, A. Vantomme, Trudo Clarysse, Osamu Nakatsuka, Shigeaki Zaima, J. Dekoster, Matty Caymax, Roger Loo	2010	92
16	Deposition of HfO2 on germanium and the impact of surface pretreatments Applied Physics Letters ·Sven Van Elshocht, Bert Brijs, Matty Caymax, Thierry Conard, T. Chiarella, Stefan De Gendt, Brice De Jaeger, Stefan Kubicek, Marc Meuris, Bart Onsia, Olivier Richard, Ivo Teerlinck, Jan Van Steenbergen, Chao Zhao, Marc Heyns	2004	91
17	A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ and InP Capacitors IEEE Transactions on Electron Devices ·Guy Brammertz, A. Alian, Dennis Lin, Marc Meuris, Matty Caymax, Wei Wang	2011	91
18	Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures Applied Physics Letters ·Guy Brammertz, Koen Martens, Sonja Sioncke, Annelies Delabie, Matty Caymax, Marc Meuris, Marc Heyns	2007	90
19	Atomic layer deposition of hafnium oxide on germanium substrates Journal of Applied Physics ·Annelies Delabie, Riikka L. Puurunen, Bert Brijs, Matty Caymax, Thierry Conard, Bart Onsia, Olivier Richard, Wilfried Vandervorst, Chao Zhao, Marc Heyns, Marc Meuris, M. Viitanen, Hidde H. Brongersma, M. de Ridder, Lyudmila V. Goncharova, Eric Garfunkel, Torgny Gustafsson, Wilman Tsai	2005	89
20	High performance Ge pMOS devices using a Si-compatible process flow Paul Zimmerman, G. Nicholas, Brice De Jaeger, B. Kaczer, A. Stesmans, L-A Ragnarsson, D.P. Brunco, Frederik Leys, Matty Caymax, Gillis Winderickx, Karl Opsomer, Marc Meuris, Marc Heyns	2006	87

About Matty Caymax

Matty Caymax is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Electronic, Optical and Magnetic Materials, having authored 473 papers that have together received 9.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (319 papers), Advancements in Semiconductor Devices and Circuit Design (168 papers), Silicon and Solar Cell Technologies (104 papers), Semiconductor materials and interfaces (92 papers), Integrated Circuits and Semiconductor Failure Analysis (86 papers), Thin-Film Transistor Technologies (62 papers), Semiconductor Quantum Structures and Devices (55 papers) and Photonic and Optical Devices (52 papers). The work is most often cited by research in Electrical and Electronic Engineering (8.5k citations), Atomic and Molecular Physics, and Optics (2.9k citations), Materials Chemistry (3.8k citations), Biomedical Engineering (1.7k citations) and Surfaces, Coatings and Films (207 citations). Matty Caymax has collaborated with scholars based in Belgium, United States and Germany. Frequent co-authors include Marc Heyns, Marc Meuris, Roger Loo, Annelies Delabie, Wilfried Vandervorst, Michel Houssa, Thierry Conard, H. Bender, Guy Brammertz and Sven Van Elshocht. Their work appears in journals such as Applied Physics Letters, Thin Solid Films, Journal of The Electrochemical Society, Microelectronic Engineering and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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