I. Debusschere

1.1k citations

50 papers · 466 · h-index 13

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- 3D IC and TSV technologies
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Electronic Packaging and Soldering Technologies
Materials Chemistry
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 48
- Semiconductor materials and devices 32
- CCD and CMOS Imaging Sensors 12
- Advancements in Semiconductor Devices and Circuit Design 10
- Advanced Memory and Neural Computing 10
- Ferroelectric and Negative Capacitance Devices 5
Materials Chemistry 13

Co-authors: Jan Van Houdt (16 shared papers)A. Cacciato (13 shared papers)C. Vrancken (12 shared papers)G. Declerck (9 shared papers)Cor Claeys (11 shared papers)Pieter Blomme (6 shared papers)L. Breuil (11 shared papers)Gouri Sankar Kar (7 shared papers)
Journals: Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (7 papers)IEEE Electron Device Letters (2 papers)Applied Physics Letters (2 papers)Sensors and Actuators A Physical (1 paper)Microelectronic Engineering (1 paper)
Partner nations: Belgium United States United Kingdom

In The Last Decade

I. Debusschere

43 papers receiving 454 citations

Peers

Countries citing papers authored by I. Debusschere

Since Specialization

Citations

This map shows the geographic impact of I. Debusschere's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Debusschere with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Debusschere more than expected).

Fields of papers citing papers by I. Debusschere

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Debusschere. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Debusschere. The network helps show where I. Debusschere may publish in the future.

Co-authors

The 25 scholars most cited alongside I. Debusschere, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with I. Debusschere Line = papers co-authored together I. Debusschere links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 50 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	3D stacked ICs using Cu TSVs and Die to Wafer Hybrid Collective bonding Guruprasad Katti, Ali Merç, J. Van Olmen, Cedric Huyghebaert, Anne Jourdain, Michele Stucchi, Michał Rakowski, I. Debusschere, P. Soussan, Wim Dehaene, K. De Meyer, Youssef Travaly, Eric Beyne, S. Biesemans, Bart Swinnen	2009	56
2	Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D nand Flash Memory IEEE Electron Device Letters ·G. Van den bosch, Gouri Sankar Kar, Pieter Blomme, A. Arreghini, A. Cacciato, L. Breuil, A. De Keersgieter, Vasile Paraschiv, C. Vrancken, Bastien Douhard, Olivier Richard, Steven Van Aerde, I. Debusschere, Jan Van Houdt	2011	39
3	Copper through silicon via induced keep out zone for 10nm node bulk FinFET CMOS technology Wei Guo, Victor Moroz, Geert Van der Plas, Minkeun Choi, A. Redolfi, Lee Smith, Geert Eneman, Stefaan Van Huylenbroeck, Pin Su, Alojz Ivankoviç, B. De Wachter, I. Debusschere, Kristof Croes, Ingrid De Wolf, A. Mercha, Gerald Beyer, Bart Swinnen, Eric Beyne	2013	31
4	Impact of through silicon via induced mechanical stress on fully depleted Bulk FinFET technology Wei Guo, Geert Van der Plas, Alojz Ivankoviç, Vladimir Cherman, Geert Eneman, B. De Wachter, M. Togo, A. Redolfi, S. Kubicek, Yann Civale, T. Chiarella, Bart Vandevelde, Kristof Croes, Ingrid De Wolf, I. Debusschere, A. Mercha, Aaron Thean, Gerald Beyer, Bart Swinnen, Eric Beyne	2012	30
5	Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodes Applied Physics Letters ·Małgorzata Pawlak, B. Kaczer, M.-S. Kim, M. Popovici, Kazuyuki Tomida, Johan Swerts, Karl Opsomer, W. Polspoel, Paola Favia, C. Vrancken, C. Demeurisse, W.C. Wang, V. V. Afanas’ev, Wilfried Vandervorst, H. Bender, I. Debusschere, L. Altimime, J. A. Kittl	2010	27
6	Temperature dependent electrical characteristics of through-si-via (TSV) interconnections Guruprasad Katti, A. Mercha, Michele Stucchi, Zs. Tôkei, Dimitrios Velenis, J. Van Olmen, Cedric Huyghebaert, Anne Jourdain, Michał Rakowski, I. Debusschere, P. Soussan, Herman Oprins, Wim Dehaene, K. De Meyer, Youssef Travaly, Eric Beyne, S. Biesemans, Bart Swinnen	2010	26
7	Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors Applied Physics Letters ·Małgorzata Pawlak, B. Kaczer, M.-S. Kim, M. Popovici, Johan Swerts, W.-C. Wang, Karl Opsomer, Paola Favia, Kazuyuki Tomida, Attilio Belmonte, B. Govoreanu, C. Vrancken, C. Demeurisse, H. Bender, V. V. Afanas’ev, I. Debusschere, L. Altimime, J. A. Kittl	2011	24
8	Hybrid Floating Gate Cell for Sub-20-nm NAND Flash Memory Technology IEEE Electron Device Letters ·Pieter Blomme, A. Cacciato, D. Wellekens, L. Breuil, M. Rosmeulen, Gouri Sankar Kar, S. Locorotondo, C. Vrancken, Olivier Richard, I. Debusschere, Jan Van Houdt	2012	23
9	A retinal CCD Sensor for fast 2D shape recognition and tracking Sensors and Actuators A Physical ·I. Debusschere, E. Bronckaers, Cor Claeys, G. Kreider, Jan Van der Spiegel, Giulio Sandini, Paolo Dario, F. Fantini, P. Bellutti, G. Soncini	1990	19
10	Novel Bi-Layer Poly-Silicon Channel Vertical Flash Cell for Ultrahigh Density 3D SONOS NAND Technology Gouri Sankar Kar, G. Van den bosch, A. Cacciato, Pieter Blomme, Steven Van Aerde, A. Arreghini, L. Breuil, A. De Keersgieter, Vasile Paraschiv, C. Vrancken, Bastien Douhard, Olivier Richard, I. Debusschere, Jan Van Houdt, B.J. Tang	2011	19
11	<title>Retinalike space variant CCD sensor</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·G. Kreider, Jan Van der Spiegel, Ivan Born, Cor Claeys, I. Debusschere, Giulio Sandini, Paolo Dario, F. Fantini	1990	15
12	New concepts for integrated solid state detector electronics Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·G. Vanstraelen, I. Debusschere, C. Claeys, G. Declerck	1988	12
13	Fully integrated CMOS pixel detector for high energy particles Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·G. Vanstraelen, I. Debusschere, C. Claeys, G. Declerck	1989	12
14	O<inf>2</inf> post deposition anneal of Al<inf>2</inf>O<inf>3</inf> blocking dielectric for higher performance and reliability of TANOS Flash memory A. Rothschild, L. Breuil, G. Van den bosch, Olivier Richard, Thierry Conard, Alexis Franquet, A. Cacciato, I. Debusschere, M. Jurczak, Jan Van Houdt, J. A. Kittl, Udayan Ganguly, L. Daté, Pieter Boelen, R. Schreutelkamp	2009	11
15	Ultra thin hybrid floating gate and high-k dielectric as IGD enabler of highly scaled planar NAND flash technology Gouri Sankar Kar, L. Breuil, Pieter Blomme, Hubert Hody, S. Locorotondo, N. Jossart, Olivier Richard, H. Bender, G. Van den bosch, I. Debusschere, Jan Van Houdt	2012	11
16	An Ultra-Thin Hybrid Floating Gate Concept for Sub-20nm NAND Flash Technologies D. Wellekens, Pieter Blomme, M. Rosmeulen, T. Schram, A. Cacciato, I. Debusschere, Steven Van Aerde, Jan Van Houdt	2011	10
17	Generation lifetime monitoring on high resistivity silicon using gated diodes Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·G. Vanstraelen, K. De Backker, I. Debusschere, C. Claeys, G. Declerck	1990	10
18	(Invited) Plasma Enhanced Atomic Layer Deposited Ruthenium for MIMCAP Applications ECS Transactions ·Johan Swerts, M. Salimullah, M. Popovici, M.-S. Kim, Małgorzata Pawlak, Annelies Delabie, Marc Schaekers, Kazuyuki Tomida, B. Kaczer, Karl Opsomer, C. Vrancken, I. Debusschere, L. Altimime, J. A. Kittl, Sven Van Elshocht	2011	10
19	Ionizing radiation hardening of a CCD technology IEEE Transactions on Nuclear Science ·Alessio Di Simone, I. Debusschere, A. Alaerts, Cor Claeys	1992	9
20	Standard cell level parasitics assessment in 20nm BPL and 14nm BFF P. Schuddinck, Mustafa Badaroglu, Michele Stucchi, S. Demuynck, Andriy Hikavyy, M. García-Bardon, A. Mercha, A. Mallik, T. Chiarella, Stefan Kubicek, Raja Athimulam, Nadine Collaert, Naoto Horiguchi, I. Debusschere, Aaron Thean, L. Altimime, Diederik Verkest	2012	8

About I. Debusschere

I. Debusschere is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Computer Networks and Communications, Aerospace Engineering and Nuclear and High Energy Physics, having authored 50 papers that have together received 466 indexed citations. Recurring topics across this work include Semiconductor materials and devices (32 papers), CCD and CMOS Imaging Sensors (12 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers), Advanced Memory and Neural Computing (10 papers), Advanced Data Storage Technologies (8 papers), Particle Detector Development and Performance (5 papers), Infrared Target Detection Methodologies (5 papers) and Ferroelectric and Negative Capacitance Devices (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (426 citations), Materials Chemistry (97 citations), Nuclear and High Energy Physics (22 citations), Electronic, Optical and Magnetic Materials (31 citations) and Radiation (14 citations). I. Debusschere has collaborated with scholars based in Belgium, United States and United Kingdom. Frequent co-authors include Jan Van Houdt, A. Cacciato, C. Vrancken, G. Declerck, Cor Claeys, Pieter Blomme, L. Breuil, Gouri Sankar Kar, Bart Swinnen and Olivier Richard. Their work appears in journals such as Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, IEEE Electron Device Letters, Applied Physics Letters, Sensors and Actuators A Physical and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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