A. Redolfi

2.2k citations

90 papers · 1.9k · h-index 25

Impact in

Electrical and Electronic Engineering top 2%
- Advanced Memory and Neural Computing
- 3D IC and TSV technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Low-power high-performance VLSI design
- Ferroelectric and Negative Capacitance Devices
- Radiation Effects in Electronics
Hardware and Architecture

Papers in

Electrical and Electronic Engineering 90
- Advanced Memory and Neural Computing 48
- 3D IC and TSV technologies 20
- Semiconductor materials and devices 14
- Advancements in Semiconductor Devices and Circuit Design 12
- Plasma Diagnostics and Applications 2
- Advancements in Photolithography Techniques 2
- Low-power high-performance VLSI design 2
Computational Mechanics 1
- Ion-surface interactions and analysis 1

Co-authors: Małgorzata Jurczak (50 shared papers)Sergiu Clima (26 shared papers)A. Fantini (28 shared papers)Ludovic Goux (25 shared papers)R. Degraeve (19 shared papers)Attilio Belmonte (26 shared papers)G. Groeseneken (16 shared papers)B. Govoreanu (12 shared papers)
Journals: IEEE Electron Device Letters (9 papers)Solid-State Electronics (5 papers)Microelectronic Engineering (5 papers)Applied Physics Letters (2 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: Belgium United States Italy

In The Last Decade

A. Redolfi

87 papers receiving 1.9k citations

Peers

Countries citing papers authored by A. Redolfi

Since Specialization

Citations

This map shows the geographic impact of A. Redolfi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Redolfi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Redolfi more than expected).

Fields of papers citing papers by A. Redolfi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Redolfi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Redolfi. The network helps show where A. Redolfi may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Redolfi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Redolfi Line = papers co-authored together A. Redolfi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 90 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Cu pumping in TSVs: Effect of pre-CMP thermal budget Microelectronics Reliability ·Ingrid De Wolf, Kristof Croes, Olalla Varela Pedreira, Riet Labie, A. Redolfi, Myriam Van De Peer, Kris Vanstreels, Chukwudi A Okoro	2011	124
2	Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession Solid-State Electronics ·T. Chiarella, Liesbeth Johanna Witters, Abdelkarim Mercha, Christoph Kerner, Michał Rakowski, Claude Ortolland, Bertrand Parvais, A. De Keersgieter	2010	107
3	Comprehensive analysis of the impact of single and arrays of through silicon vias induced stress on high-k / metal gate CMOS performance Technical digest - International Electron Devices Meeting/Technical digest ·Abdelkarim Mercha, Geert Van der Plas, Victor Moroz, Ingrid De Wolf, Panagiotis Asimakopoulos, Nikolaos Minas, Shinichi Domae, Dan Perry	2010	105
4	Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current Technical digest - International Electron Devices Meeting/Technical digest ·Yang Yin Chen, Masanori Komura, R. Degraeve, B. Govoreanu, Ludovic Goux, A. Fantini, Nagarajan Raghavan, Sergiu Clima	2013	89
5	Intrinsic program instability in HfO2 RRAM and consequences on program algorithms Technical digest - International Electron Devices Meeting/Technical digest ·A. Fantini, Georgi Gorine, R. Degraeve, Ludovic Goux, C. Y. Chen, A. Redolfi, Sergiu Clima, Alessandro Cabrini	2015	70
6	Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell Technical digest - International Electron Devices Meeting/Technical digest ·B. Govoreanu, A. Redolfi, Lujun Zhang, Christoph Adelmann, Mihaela Ioana Popovici, Sergiu Clima, Hubert Hody, Vasile Paraschiv	2013	69
7	Thermally stable integrated Se-based OTS selectors with >20 MA/cm2 current drive, >3.103 half-bias nonlinearity, tunable threshold voltage and excellent endurance Symposium on VLSI Technology ·B. Govoreanu, Gabriele Luca Donadio, Karl Opsomer, Wouter Devulder, Valery V. Afanas'ev, Thomas Witters, Sergiu Clima, Naga Sruti Avasarala	2017	60
8	Integration of TSVs, wafer thinning and backside passivation on full 300mm CMOS wafers for 3D applications 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC) ·Anne Jourdain, Thibault Buisson, Alain Phommahaxay, A. Redolfi, Sarasvathi Thangaraju, Youssef Travaly, Eric Beyne, Bart Swinnen	2011	52
9	Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current Yang Yin Chen, Masanori Komura, R. Degraeve, B. Govoreanu, Ludovic Goux, A. Fantini, Nagarajan Raghavan, Sergiu Clima	2013	50
10	Implementation of an industry compliant, 5×50μm, via-middle TSV technology on 300mm wafers 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC) ·A. Redolfi, Dimitrios Velenis, Sarasvathi Thangaraju, Philip Nolmans, Patrick Jaenen, Maarten Kostermans, Ulrich Baier, Els Van Besien	2011	46
11	High-Performance Metal-Insulator-Metal Tunnel Diode Selectors IEEE Electron Device Letters ·B. Govoreanu, Christoph Adelmann, A. Redolfi, Leqi Zhang, Sergiu Clima, Małgorzata Jurczak	2014	46
12	Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells Applied Physics Letters ·C. Y. Chen, Ludovic Goux, A. Fantini, Sergiu Clima, R. Degraeve, A. Redolfi, Y. Y. Chen, G. Groeseneken	2015	42
13	Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications IEEE Electron Device Letters ·Leqi Zhang, A. Redolfi, Christoph Adelmann, Sergiu Clima, Iuliana P. Radu, Yangyin Chen, Dirk J. Wouters, G. Groeseneken	2014	38
14	Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM device Symposium on VLSI Technology ·Ludovic Goux, A. Fantini, A. Redolfi, C.Y. Chen, R. Degraeve, Yang Yin Chen, Thomas Witters, G. Groeseneken	2014	35
15	Impact of through silicon via induced mechanical stress on fully depleted Bulk FinFET technology Technical digest - International Electron Devices Meeting/Technical digest ·Weiming Guo, Geert Van der Plas, Vladimir O. Cherman, Geert Eneman, B. De Wachter, Mitsuhiro Togo, A. Redolfi, S. Kubicek	2012	33
16	Copper through silicon via induced keep out zone for 10nm node bulk FinFET CMOS technology Technical digest - International Electron Devices Meeting/Technical digest ·Weiming Guo, Victor Moroz, Geert Van der Plas, Minkeun Choi, A. Redolfi, Lee Smith, Geert Eneman, Stefaan Van Huylenbroeck	2013	33
17	Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory Applied Physics Letters ·Mihaela Ioana Popovici, J. Swerts, A. Redolfi, B. Kaczer, M. Aoulaiche, Iuliana P. Radu, Sergiu Clima, J.-L. Everaert	2014	33
18	Understanding the impact of programming pulses and electrode materials on the endurance properties of scaled Ta2O5 RRAM cells Technical digest - International Electron Devices Meeting/Technical digest ·C.Y. Chen, Ludovic Goux, A. Fantini, A. Redolfi, Sergiu Clima, R. Degraeve, Yang Yin Chen, G. Groeseneken	2014	32
19	Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants Symposium on VLSI Technology ·Y. Y. Chen, R. Roelofs, A. Redolfi, R. Degraeve, Davide Crotti, A. Fantini, Sergiu Clima, B. Govoreanu	2014	31
20	Introduction of WO3 Layer in a Cu-Based Al2O3 Conductive Bridge RAM System for Robust Cycling and Large Memory Window IEEE Journal of the Electron Devices Society ·Jiyong Woo, Attilio Belmonte, A. Redolfi, Hyunsang Hwang, Małgorzata Jurczak, Ludovic Goux	2016	31

About A. Redolfi

A. Redolfi is a scholar working on Electrical and Electronic Engineering, Computational Mechanics, Atomic and Molecular Physics, and Optics, Materials Chemistry and Nuclear Energy and Engineering, having authored 90 papers that have together received 1.9k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (48 papers), 3D IC and TSV technologies (20 papers), Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers), Plasma Diagnostics and Applications (2 papers), Advancements in Photolithography Techniques (2 papers), Low-power high-performance VLSI design (2 papers) and Ion-surface interactions and analysis (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (1.8k citations), Hardware and Architecture (29 citations), Materials Chemistry (85 citations), Electronic, Optical and Magnetic Materials (17 citations) and Atomic and Molecular Physics, and Optics (18 citations). A. Redolfi has collaborated with scholars based in Belgium, United States and Italy. Frequent co-authors include Małgorzata Jurczak, Sergiu Clima, A. Fantini, Ludovic Goux, R. Degraeve, Attilio Belmonte, G. Groeseneken, B. Govoreanu, Eric Beyne and Ludovic Goux. Their work appears in journals such as IEEE Electron Device Letters, Solid-State Electronics, Microelectronic Engineering, Applied Physics Letters and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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