T. Schram
Impact in
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- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Materials Chemistry top 5%
- Electronic and Structural Properties of Oxides
- 2D Materials and Applications
Papers in
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- Semiconductor materials and devices 151
- Advancements in Semiconductor Devices and Circuit Design 109
- Integrated Circuits and Semiconductor Failure Analysis 59
- Ferroelectric and Negative Capacitance Devices 46
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- 2D Materials and Applications 12
- Co-authors
- Stefan De Gendt (39 shared papers)L. Pantisano (22 shared papers)Marc Heyns (15 shared papers)Herman Terryn (10 shared papers)G. Groeseneken (26 shared papers)Naoto Horiguchi (54 shared papers)Michel Houssa (9 shared papers)R. Ritzenthaler (41 shared papers)
- Journals
- Microelectronic Engineering (14 papers)Applied Physics Letters (9 papers)IEEE Electron Device Letters (9 papers)IEEE Transactions on Electron Devices (9 papers)Journal of Applied Physics (6 papers)
- Partner nations
- BelgiumUnited StatesSouth Korea
In The Last Decade
T. Schram
179 papers receiving 2.5k citations
Peers
Comparison fields: 5 of 60
- Electrical and Electronic Engineering 2.2k
- Materials Chemistry 878
- Atomic and Molecular Physics, and Optics 466
- Electronic, Optical and Magnetic Materials 196
- Metals and Alloys 25
Countries citing papers authored by T. Schram
This map shows the geographic impact of T. Schram's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Schram with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Schram more than expected).
Fields of papers citing papers by T. Schram
This network shows the impact of papers produced by T. Schram. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Schram. The network helps show where T. Schram may publish in the future.
Co-authors
The 25 scholars most cited alongside T. Schram, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
Showing the 20 most-cited of 183 papers — load more, or switch the sort, to bring in the rest.
| # | Work | ||
|---|---|---|---|
| 1 | 2006 | 237 | |
| 2 | 2003 | 109 | |
| 3 | 2003 | 93 | |
| 4 | 2001 | 89 | |
| 5 | 2018 | 67 | |
| 6 | 2015 | 65 | |
| 7 | 2006 | 59 | |
| 8 | 2022 | 55 | |
| 9 | 2011 | 53 | |
| 10 | 1995 | 52 | |
| 11 | 2014 | 49 | |
| 12 | 2011 | 49 | |
| 13 | 2009 | 48 | |
| 14 | 2006 | 43 | |
| 15 | 2005 | 43 | |
| 16 | 2005 | 40 | |
| 17 | 2016 | 40 | |
| 18 | 2017 | 39 | |
| 19 | 2015 | 37 | |
| 20 | 2006 | 35 |
About T. Schram
T. Schram is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Mechanics of Materials and Electronic, Optical and Magnetic Materials, having authored 183 papers that have together received 2.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (151 papers), Advancements in Semiconductor Devices and Circuit Design (109 papers), Integrated Circuits and Semiconductor Failure Analysis (59 papers), Ferroelectric and Negative Capacitance Devices (46 papers), Semiconductor materials and interfaces (25 papers), Metal and Thin Film Mechanics (15 papers), 2D Materials and Applications (12 papers) and Copper Interconnects and Reliability (12 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.2k citations), Materials Chemistry (878 citations), Atomic and Molecular Physics, and Optics (466 citations), Electronic, Optical and Magnetic Materials (196 citations) and Metals and Alloys (25 citations). T. Schram has collaborated with scholars based in Belgium, United States and South Korea. Frequent co-authors include Stefan De Gendt, L. Pantisano, Marc Heyns, Herman Terryn, G. Groeseneken, Naoto Horiguchi, Michel Houssa, R. Ritzenthaler, E. Cartier and L.-Å. Ragnarsson. Their work appears in journals such as Microelectronic Engineering, Applied Physics Letters, IEEE Electron Device Letters, IEEE Transactions on Electron Devices and Journal of Applied Physics.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.