D. Wellekens

2.0k citations
87 papers · 1.7k · h-index 22

Impact in

  • Condensed Matter Physics top 1%
    • GaN-based semiconductor devices and materials
  • Electrical and Electronic Engineering top 5%
    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Silicon Carbide Semiconductor Technologies
    • Advanced Memory and Neural Computing
    • Integrated Circuits and Semiconductor Failure Analysis

Papers in

  • Electrical and Electronic Engineering 81
    • Semiconductor materials and devices 71
    • Advancements in Semiconductor Devices and Circuit Design 36
    • Advanced Memory and Neural Computing 19
    • Silicon Carbide Semiconductor Technologies 17
    • Ferroelectric and Negative Capacitance Devices 9
  • Condensed Matter Physics 31
    • GaN-based semiconductor devices and materials 31
Co-authors
Stefaan Decoutere (31 shared papers)G. Groeseneken (31 shared papers)Jan Van Houdt (46 shared papers)Karen Geens (13 shared papers)Brice De Jaeger (13 shared papers)M. Van Hove (10 shared papers)Shuzhen You (11 shared papers)Steve Stoffels (10 shared papers)
Journals
IEEE Transactions on Electron Devices (12 papers)IEEE Electron Device Letters (7 papers)Japanese Journal of Applied Physics (4 papers)Microelectronic Engineering (2 papers)Solid-State Electronics (1 paper)
Partner nations
BelgiumGermanyUnited States

In The Last Decade

D. Wellekens

84 papers receiving 1.6k citations

Peers

D. Wellekens
Comparison fields: 5 of 29
  • Condensed Matter Physics 984
  • Electrical and Electronic Engineering 1.4k
  • Electronic, Optical and Magnetic Materials 447
  • Atomic and Molecular Physics, and Optics 240
  • Materials Chemistry 263
Replace K. Smith with:
K. Smith United States
T. Kishi Japan
Jai Kwang Shin South Korea
C. Ducruet France
T. Nagase Japan
K. Nagahara Japan
Han Wui Then United States
Seung‐heon Chris Baek South Korea
Butsurin Jinnai Japan
Naoharu Shimomura Japan
D. Wellekens relative to K. Smith United States K. Smith's profile →
Citations per field
00.5×2×4×5.9×
K. Smith · 1×
Citations per year

Countries citing papers authored by D. Wellekens

Since Specialization
Citations

This map shows the geographic impact of D. Wellekens's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Wellekens with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Wellekens more than expected).

Fields of papers citing papers by D. Wellekens

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Wellekens. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Wellekens. The network helps show where D. Wellekens may publish in the future.

Co-authors

The 25 scholars most cited alongside D. Wellekens, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Wellekens Line = papers co-authored together D. Wellekens links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 87 papers — load more, or switch the sort, to bring in the rest.

#Work
1
CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon
IEEE Electron Device Letters ·M. Van Hove, S. Boulay, S.R. Bahl, Steve Stoffels, Xuanwu Kang, D. Wellekens, Karen Geens, Annelies Delabie, Stefaan Decoutere
2012182
2
Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination
IEEE Electron Device Letters ·Silvia Lenci, Brice De Jaeger, L. Carbonell, Jie Hu, G. Mannaert, D. Wellekens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere
2013122
3
An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology
Niels Posthuma, Shuzhen You, Steve Stoffels, D. Wellekens, H. Liang, Ming Zhao, Brice De Jaeger, Karen Geens, N. Ronchi, Stefaan Decoutere, P. Moens, Abhishek Banerjee, H. Ziad, M. Tack
201898
4
Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates
Brice De Jaeger, M. Van Hove, D. Wellekens, Xuanwu Kang, Hailian Liang, G. Mannaert, Karen Geens, Stefaan Decoutere
201281
5
Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance
Niels Posthuma, Shuzhen You, H. Liang, N. Ronchi, Xuanwu Kang, D. Wellekens, Y. N. Saripalli, Stefaan Decoutere
201680
6
SILC-related effects in flash E/sup 2/PROM's-Part I: A quantitative model for steady-state SILC
IEEE Transactions on Electron Devices ·J. De Blauwe, J. van Heudt, D. Wellekens, G. Groeseneken, H.E. Maes
199872
7
GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion
Ghent University Academic Bibliography (Ghent University) ·X. Li, Nooshin Amirifar, Karen Geens, Ming Zhao, Weiming Guo, Hailian Liang, Shuzhen You, Niels Posthuma, Brice De Jaeger, Steve Stoffels, Benoit Bakeroot, D. Wellekens, Benjamin Vanhove, Thibault Cosnier, R. Langer, Denis Marcon, G. Groeseneken, Stefaan Decoutere
201968
8
Analytical Percolation Model for Predicting Anomalous Charge Loss in Flash Memories
IEEE Transactions on Electron Devices ·R. Degraeve, F. Schuler, B. Kaczer, M. Lorenzini, D. Wellekens, Paul Hendrickx, M. vanDuuren, G. J. M. Dormans, J. VanHoudt, L. Haspeslagh, G. Groeseneken, G. Tempel
200467
9
Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates
Japanese Journal of Applied Physics ·Andrea Firrincieli, Brice De Jaeger, Shuzhen You, D. Wellekens, M. Van Hove, Stefaan Decoutere
201463
10
Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics
IEEE Transactions on Electron Devices ·M. Van Hove, Xuanwu Kang, Steve Stoffels, D. Wellekens, N. Ronchi, R. Venegas, Karen Geens, Stefaan Decoutere
201360
11
HIM0S-a high efficiency flash E/sup 2/PROM cell for embedded memory applications
IEEE Transactions on Electron Devices ·Jan Van Houdt, L. Haspeslagh, D. Wellekens, L. Deferm, G. Groeseneken, H.E. Maes
199347
12
SILC-related effects in flash E/sup 2/PROM's-Part II: Prediction of steady-state SILC-related disturb characteristics
IEEE Transactions on Electron Devices ·J. De Blauwe, J. van Heudt, D. Wellekens, G. Groeseneken, H.E. Maes
199840
13
Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination
IEEE Transactions on Electron Devices ·Jie Hu, Steve Stoffels, Silvia Lenci, Brice De Jaeger, N. Ronchi, Andrea Natale Tallarico, D. Wellekens, Shuzhen You, Benoit Bakeroot, G. Groeseneken, Stefaan Decoutere
201639
14
Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs
IEEE Transactions on Electron Devices ·Shun‐Wei Tang, Benoit Bakeroot, Zhen-Hong Huang, Szu-Chia Chen, Wei-Syuan Lin, Ting-Chun Lo, Matteo Borga, D. Wellekens, Niels Posthuma, Stefaan Decoutere, Tian‐Li Wu
202234
15
Trading Off between Threshold Voltage and Subthreshold Slope in AlGaN/GaN HEMTs with a p-GaN Gate
Ghent University Academic Bibliography (Ghent University) ·Benoit Bakeroot, Steve Stoffels, Niels Posthuma, D. Wellekens, Stefaan Decoutere
201932
16
Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Denis Marcon, M. Van Hove, Brice De Jaeger, Niels Posthuma, D. Wellekens, Shuzhen You, Xuanwu Kang, Tian‐Li Wu, Maarten Willems, Steve Stoffels, Stefaan Decoutere
201531
17
Analytical model for failure rate prediction due to anomalous charge loss of flash memories
R. Degraeve, F. Schuler, M. Lorenzini, D. Wellekens, Paul Hendrickx, Jan Van Houdt, L. Haspeslagh, G. Groeseneken, G. Tempel
200231
18
A New Scalable Self-Aligned Dual-Bit Split-Gate Charge-Trapping Memory Device
IEEE Transactions on Electron Devices ·L. Breuil, L. Haspeslagh, Pieter Blomme, D. Wellekens, J. DeVos, M. Lorenzini, J. VanHoudt
200527
19
Write/erase degradation in source side injection flash EEPROM's: characterization techniques and wearout mechanisms
IEEE Transactions on Electron Devices ·D. Wellekens, Jan Van Houdt, L. Faraone, G. Groeseneken, H.E. Maes
199526
20
Hybrid Floating Gate Cell for Sub-20-nm NAND Flash Memory Technology
IEEE Electron Device Letters ·Pieter Blomme, A. Cacciato, D. Wellekens, L. Breuil, M. Rosmeulen, Gouri Sankar Kar, S. Locorotondo, C. Vrancken, Olivier Richard, I. Debusschere, Jan Van Houdt
201223

About D. Wellekens

D. Wellekens is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Computer Networks and Communications, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 87 papers that have together received 1.7k indexed citations. Recurring topics across this work include Semiconductor materials and devices (71 papers), Advancements in Semiconductor Devices and Circuit Design (36 papers), GaN-based semiconductor devices and materials (31 papers), Advanced Data Storage Technologies (19 papers), Advanced Memory and Neural Computing (19 papers), Silicon Carbide Semiconductor Technologies (17 papers), Ga2O3 and related materials (13 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). The work is most often cited by research in Condensed Matter Physics (984 citations), Electrical and Electronic Engineering (1.4k citations), Electronic, Optical and Magnetic Materials (447 citations), Atomic and Molecular Physics, and Optics (240 citations) and Materials Chemistry (263 citations). D. Wellekens has collaborated with scholars based in Belgium, Germany and United States. Frequent co-authors include Stefaan Decoutere, G. Groeseneken, Jan Van Houdt, Karen Geens, Brice De Jaeger, M. Van Hove, Shuzhen You, Steve Stoffels, Xuanwu Kang and H.E. Maes. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Japanese Journal of Applied Physics, Microelectronic Engineering and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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