Mathieu Luisier

8.0k citations

266 papers · 6.3k · 2 hit papers · h-index 39

Impact in

Electrical and Electronic Engineering top 0.5%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
Materials Chemistry top 2%
- Graphene research and applications
- 2D Materials and Applications

Papers in

Electrical and Electronic Engineering 223
- Advancements in Semiconductor Devices and Circuit Design 134
- Semiconductor materials and devices 116
- Advanced Memory and Neural Computing 43
- Ferroelectric and Negative Capacitance Devices 31
Atomic and Molecular Physics, and Optics 76
- Quantum and electron transport phenomena 42

Co-authors: Gerhard Klimeck (47 shared papers)Andreas Schenk (32 shared papers)Wolfgang Fichtner (8 shared papers)Áron Szabó (18 shared papers)Mark Lundstrom (6 shared papers)Reto Rhyner (16 shared papers)Aaron D. Franklin (3 shared papers)Lynne M. Gignac (2 shared papers)
Journals: Journal of Applied Physics (19 papers)IEEE Transactions on Electron Devices (17 papers)Applied Physics Letters (17 papers)IEEE Electron Device Letters (11 papers)Nano Letters (10 papers)
Partner nations: Switzerland United States France

In The Last Decade

Mathieu Luisier

251 papers receiving 6.1k citations

Mathieu Luisier's Hit Papers

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The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials 2021 · 300 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2021 Nature Electronics
2012 Nano Letters

Peers

Countries citing papers authored by Mathieu Luisier

Since Specialization

Citations

This map shows the geographic impact of Mathieu Luisier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mathieu Luisier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mathieu Luisier more than expected).

Fields of papers citing papers by Mathieu Luisier

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mathieu Luisier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mathieu Luisier. The network helps show where Mathieu Luisier may publish in the future.

Co-authors

The 25 scholars most cited alongside Mathieu Luisier, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Mathieu Luisier Line = papers co-authored together Mathieu Luisier links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 266 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Sub-10 nm Carbon Nanotube Transistor Nano Letters ·Aaron D. Franklin, Mathieu Luisier, Shu‐Jen Han, George S. Tulevski, Chris M. Breslin, Lynne M. Gignac, Mark Lundstrom, Wilfried E. Haensch Hit paper breakdown →	2012	644
2	Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism: From boundary conditions to strain calculations Physical Review B ·Mathieu Luisier, Andreas Schenk, Wolfgang Fichtner, Gerhard Klimeck	2006	316
3	The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials Nature Electronics ·Theresia Knobloch, Yu. Yu. Illarionov, Fabian Ducry, Christian Schleich, Stefan Wachter, K Watanabe, T. Taniguchi, Thomas Mueller, Michael Waltl, Mario Lanza, Mikhail I. Vexler, Mathieu Luisier, Tibor Grasser Hit paper breakdown →	2021	300
4	Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering Physical Review B ·Mathieu Luisier, Gerhard Klimeck	2009	196
5	Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling Journal of Applied Physics ·Mathieu Luisier, Gerhard Klimeck	2010	152
6	Soft surfaces of nanomaterials enable strong phonon interactions Nature ·Deniz Bozyigit, Nuri A. Yazdani, Maksym Yarema, Olesya Yarema, Weyde M. M. Lin, Sebastian Volk, Kantawong Vuttivorakulchai, Mathieu Luisier, Fanni Jurànyi, Vanessa Wood	2016	146
7	On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients Journal of Applied Physics ·Changwook Jeong, Raseong Kim, Mathieu Luisier, Supriyo Datta, Mark Lundstrom	2010	134
8	Quantum transport in two- and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green’s function formalism Journal of Applied Physics ·Mathieu Luisier, Andreas Schenk, Wolfgang Fichtner	2006	130
9	Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors IEEE Electron Device Letters ·Mathieu Luisier, Gerhard Klimeck	2009	129
10	Atomic Scale Plasmonic Switch Nano Letters ·Alexandros Emboras, Jens Niegemann, Ping Ma, Christian Haffner, Andreas Pedersen, Mathieu Luisier, Christian V. Hafner, Thomas Schimmel, J Leuthold	2015	124
11	Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights ACS Applied Materials & Interfaces ·Mattia Halter, Laura Bégon‐Lours, Valeria Bragaglia, Marilyne Sousa, Bert Jan Offrein, Stefan Abel, Mathieu Luisier, J. Fompeyrine	2020	94
12	Ab initiosimulation of single- and few-layer MoS2 transistors: Effect of electron-phonon scattering Physical Review B ·Áron Szabó, Reto Rhyner, Mathieu Luisier	2015	90
13	Fast Methods for Computing Selected Elements of the Green’s Function in Massively Parallel Nanoelectronic Device Simulations Lecture notes in computer science ·Andrey N. Kuzmin, Mathieu Luisier, Olaf Schenk	2013	89
14	One-Dimensional Edge Contacts to a Monolayer Semiconductor Nano Letters ·Achint Jain, Áron Szabó, Markus Parzefall, Eric Bonvin, T. Taniguchi, K Watanabe, Palash Bharadwaj, Mathieu Luisier, Lukáš Novotný	2019	86
15	Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors IEEE Electron Device Letters ·Samarth Agarwal, Gerhard Klimeck, Mathieu Luisier	2010	86
16	Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures Purdue e-Pubs (Purdue University System) ·Mathieu Luisier, Gerhard Klimeck	2009	81
17	WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake npj 2D Materials and Applications ·Nicolò Oliva, Jonathan Backman, Luca Capua, Matteo Cavalieri, Mathieu Luisier, Adrian Mihai Ionescu	2020	75
18	Light from van der Waals quantum tunneling devices RePEc: Research Papers in Economics ·Markus Parzefall, Áron Szabó, T. Taniguchi, K Watanabe, Mathieu Luisier, Lukáš Novotný	2019	72
19	Tuning Electron–Phonon Interactions in Nanocrystals through Surface Termination Nano Letters ·Nuri A. Yazdani, Deniz Bozyigit, Kantawong Vuttivorakulchai, Mathieu Luisier, Ivan Infante, Vanessa Wood	2018	72
20	Ab-Initio Simulation of van der Waals MoTe2–SnS2 Heterotunneling FETs for Low-Power Electronics IEEE Electron Device Letters ·Áron Szabó, Steven J. Koester, Mathieu Luisier	2015	72

About Mathieu Luisier

Mathieu Luisier is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Cellular and Molecular Neuroscience, having authored 266 papers that have together received 6.3k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (134 papers), Semiconductor materials and devices (116 papers), Nanowire Synthesis and Applications (81 papers), Advanced Memory and Neural Computing (43 papers), Quantum and electron transport phenomena (42 papers), Graphene research and applications (38 papers), 2D Materials and Applications (31 papers) and Ferroelectric and Negative Capacitance Devices (31 papers). The work is most often cited by research in Electrical and Electronic Engineering (4.4k citations), Materials Chemistry (2.8k citations), Atomic and Molecular Physics, and Optics (1.4k citations), Biomedical Engineering (1.7k citations) and Condensed Matter Physics (195 citations). Mathieu Luisier has collaborated with scholars based in Switzerland, United States and France. Frequent co-authors include Gerhard Klimeck, Andreas Schenk, Wolfgang Fichtner, Áron Szabó, Mark Lundstrom, Reto Rhyner, Aaron D. Franklin, Lynne M. Gignac, Shu‐Jen Han and George S. Tulevski. Their work appears in journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices, Applied Physics Letters, IEEE Electron Device Letters and Nano Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Mathieu Luisier

Mathieu Luisier's Hit Papers

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About Mathieu Luisier

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