Devin Verreck

1.2k citations

68 papers · 762 · h-index 16

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
Materials Chemistry
- 2D Materials and Applications
- Graphene research and applications

Papers in

Electrical and Electronic Engineering 67
- Semiconductor materials and devices 51
- Advancements in Semiconductor Devices and Circuit Design 44
- Ferroelectric and Negative Capacitance Devices 25
- Advanced Memory and Neural Computing 7
- Integrated Circuits and Semiconductor Failure Analysis 7
Materials Chemistry 18
- 2D Materials and Applications 14

Co-authors: Anne S. Verhulst (27 shared papers)G. Groeseneken (20 shared papers)Quentin Smets (24 shared papers)Nadine Collaert (19 shared papers)Dennis Lin (14 shared papers)Bart Sorée (16 shared papers)Iuliana Radu (12 shared papers)Aaron Thean (12 shared papers)
Journals: IEEE Transactions on Electron Devices (8 papers)Applied Physics Letters (6 papers)Journal of Applied Physics (6 papers)IEEE Electron Device Letters (2 papers)npj 2D Materials and Applications (2 papers)
Partner nations: Belgium United States Japan

In The Last Decade

Devin Verreck

64 papers receiving 743 citations

Peers

Countries citing papers authored by Devin Verreck

Since Specialization

Citations

This map shows the geographic impact of Devin Verreck's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Devin Verreck with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Devin Verreck more than expected).

Fields of papers citing papers by Devin Verreck

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Devin Verreck. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Devin Verreck. The network helps show where Devin Verreck may publish in the future.

Co-authors

The 25 scholars most cited alongside Devin Verreck, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Devin Verreck Line = papers co-authored together Devin Verreck links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 68 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Ultra-scaled MOCVD MoS₂ MOSFETs with 42nm contact pitch and 250µA/µm drain current Quentin Smets, Goutham Arutchelvan, Julien Jussot, Devin Verreck, Inge Asselberghs, Ankit Nalin Mehta, Abhinav Gaur, Dennis Lin, Salim El Kazzi, Benjamin Groven, Matty Caymax, Iuliana Radu	2019	62
2	Part I: Impact of Field-Induced Quantum Confinement on the Subthreshold Swing Behavior of Line TFETs IEEE Transactions on Electron Devices ·A. Walke, Anne S. Verhulst, A. Vandooren, Devin Verreck, Eddy Simoen, Valipe Ramgopal Rao, G. Groeseneken, Nadine Collaert, Aaron Thean	2013	56
3	Impact of device scaling on the electrical properties of MoS2 field-effect transistors Scientific Reports ·Goutham Arutchelvan, Quentin Smets, Devin Verreck, Zubair Ahmed, Abhinav Gaur, Surajit Sutar, Julien Jussot, Benjamin Groven, Marc Heyns, Dennis Lin, Inge Asselberghs, Iuliana Radu	2021	52
4	Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors IEEE Transactions on Electron Devices ·Devin Verreck, Anne S. Verhulst, Kuo-Hsing Kao, William G. Vandenberghe, K. De Meyer, G. Groeseneken	2013	52
5	InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models Journal of Applied Physics ·Quentin Smets, Devin Verreck, Anne S. Verhulst, R. Rooyackers, Clément Merckling, Maarten L. Van de Put, Eddy Simoen, Wilfried Vandervorst, Nadine Collaert, V. Y. Thean, Bart Sorée, G. Groeseneken, Marc Heyns	2014	42
6	InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature Applied Physics Letters ·A. Alian, Y. Mols, Caio Cesar Mendes Bordallo, Devin Verreck, Anne S. Verhulst, A. Vandooren, R. Rooyackers, Paula Ghedini Der Agopian, João Antônio Martino, A. Thean, Dennis Lin, D. Mocuta, Nadine Collaert	2016	40
7	Introducing 2D-FETs in Device Scaling Roadmap using DTCO Zubair Ahmed, Aryan Afzalian, T. Schram, Doyoung Jang, Devin Verreck, Quentin Smets, P. Schuddinck, Bilal Chehab, Surajit Sutar, Goutham Arutchelvan, Assawer Soussou, Inge Asselberghs, A. Spessot, Iuliana Radu, Bertrand Parvais, Julien Ryckaert, M. H. Na	2020	33
8	Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET A. Alian, J. Franco, A. Vandooren, Yves Mols, Anne S. Verhulst, Salim El Kazzi, R. Rooyackers, Devin Verreck, Quentin Smets, A. Mocuta, Nadine Collaert, Dennis Lin, Aaron Thean	2015	26
9	Perspective of tunnel-FET for future low-power technology nodes Anne S. Verhulst, Devin Verreck, Quentin Smets, Kuo-Hsing Kao, Maarten L. Van de Put, R. Rooyackers, Bart Sorée, A. Vandooren, K. De Meyer, G. Groeseneken, Marc Heyns, A. Mocuta, Nadine Collaert, A. V-Y. Thean	2014	23
10	Understanding the ISPP Slope in Charge Trap Flash Memory and its Impact on 3-D NAND Scaling 2021 IEEE International Electron Devices Meeting (IEDM) ·Devin Verreck, A. Arreghini, F. Schanovsky, G. Rzepa, Zlatan Stanojević, F. Mitterbauer, C. Kernstock, O. Baumgartner, M. Karner, G. Van den bosch, M. Rosmeulen	2021	22
11	Understanding ambipolar transport in MoS ₂ field effect transistors: the substrate is the key Nanotechnology ·Vivek Mootheri, Alessandra Leonhardt, Devin Verreck, Inge Asselberghs, Cedric Huyghebaert, Stefan De Gendt, Iuliana Radu, Dennis Lin, Marc Heyns	2020	21
12	Dual gate synthetic WS₂ MOSFETs with 120μS/μm Gm 2.7μF/cm² capacitance and ambipolar channel Dennis Lin, Xiangyu Wu, Daire Cott, Devin Verreck, Benjamin Groven, Stephanie Sergeant, Quentin Smets, Surajit Sutar, Inge Asselberghs, Iuliana Radu	2020	19
13	Quantum mechanical solver for confined heterostructure tunnel field-effect transistors Journal of Applied Physics ·Devin Verreck, Maarten L. Van de Put, Bart Sorée, Anne S. Verhulst, Wim Magnus, William G. Vandenberghe, Nadine Collaert, Aaron Thean, G. Groeseneken	2014	19
14	Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes IEEE Journal of the Electron Devices Society ·Jasper Bizindavyi, Anne S. Verhulst, Quentin Smets, Devin Verreck, Bart Sorée, G. Groeseneken	2018	17
15	The Role of Nonidealities in the Scaling of MoS₂ FETs IEEE Transactions on Electron Devices ·Devin Verreck, Goutham Arutchelvan, César Javier Lockhart de la Rosa, Alessandra Leonhardt, Daniele Chiappe, Anh Khoa Augustin Lu, Geoffrey Pourtois, Philippe Matagne, Marc Heyns, Stefan De Gendt, A. Mocuta, Iuliana Radu	2018	16
16	Dual gate synthetic MoS₂ MOSFETs with 4.56µF/cm² channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg 2021 IEEE International Electron Devices Meeting (IEDM) ·Xiangyu Wu, Daire Cott, Zaoyang Lin, Yuanyuan Shi, Benjamin Groven, P. Morin, Devin Verreck, Quentin Smets, Henry Medina, Surajit Sutar, Inge Asselberghs, Iuliana Radu, Dennis Lin	2021	16
17	Uniform Strain in Heterostructure Tunnel Field-Effect Transistors IEEE Electron Device Letters ·Devin Verreck, Anne S. Verhulst, Maarten L. Van de Put, Bart Sorée, Nadine Collaert, A. Mocuta, Aaron Thean, G. Groeseneken	2016	14
18	Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic Applied Physics Letters ·Devin Verreck, Anne S. Verhulst, Bart Sorée, Nadine Collaert, A. Mocuta, Aaron Thean, G. Groeseneken	2014	14
19	Large Variation in Temperature Dependence of Band-to-Band Tunneling Current in Tunnel Devices IEEE Electron Device Letters ·Jasper Bizindavyi, Anne S. Verhulst, Devin Verreck, Bart Sorée, G. Groeseneken	2019	14
20	Impact of Mechanical Stress on the Electrical Performance of 3D NAND Anastasiia Kruv, A. Arreghini, Mireia Bargalló González, Devin Verreck, G. Van den bosch, Ingrid De Wolf, A. Furnémont	2019	12

About Devin Verreck

Devin Verreck is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering, Computer Networks and Communications and Atomic and Molecular Physics, and Optics, having authored 68 papers that have together received 762 indexed citations. Recurring topics across this work include Semiconductor materials and devices (51 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers), Ferroelectric and Negative Capacitance Devices (25 papers), 2D Materials and Applications (14 papers), Nanowire Synthesis and Applications (11 papers), Advanced Data Storage Technologies (10 papers), Advanced Memory and Neural Computing (7 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (686 citations), Materials Chemistry (219 citations), Biomedical Engineering (176 citations), Atomic and Molecular Physics, and Optics (65 citations) and Computer Networks and Communications (46 citations). Devin Verreck has collaborated with scholars based in Belgium, United States and Japan. Frequent co-authors include Anne S. Verhulst, G. Groeseneken, Quentin Smets, Nadine Collaert, Dennis Lin, Bart Sorée, Iuliana Radu, Aaron Thean, Inge Asselberghs and Goutham Arutchelvan. Their work appears in journals such as IEEE Transactions on Electron Devices, Applied Physics Letters, Journal of Applied Physics, IEEE Electron Device Letters and npj 2D Materials and Applications.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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