T. Ghani

7.9k citations
34 papers · 2.5k · 1 hit paper · h-index 19

Impact in

  • Electrical and Electronic Engineering top 2%
    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Integrated Circuits and Semiconductor Failure Analysis
    • Ferroelectric and Negative Capacitance Devices
    • Advanced Memory and Neural Computing
    • Low-power high-performance VLSI design
    • Silicon Carbide Semiconductor Technologies
  • Hardware and Architecture top 5%

Papers in

  • Electrical and Electronic Engineering 28
    • Advancements in Semiconductor Devices and Circuit Design 24
    • Semiconductor materials and devices 23
    • Silicon Carbide Semiconductor Technologies 5
    • Integrated Circuits and Semiconductor Failure Analysis 5
    • Advancements in Photolithography Techniques 4
    • Silicon and Solar Cell Technologies 3
  • Biomedical Engineering 7
    • Nanowire Synthesis and Applications 5
Co-authors
M. Bohr (13 shared papers)K. Mistry (14 shared papers)R. Chau (4 shared papers)Scott E. Thompson (9 shared papers)Kaizad Mistry (2 shared papers)S. Tyagi (9 shared papers)A. Murthy (4 shared papers)Dmitri E. Nikonov (3 shared papers)
Journals
Applied Physics Letters (3 papers)IEEE Electron Device Letters (2 papers)Nature (1 paper)IEEE Transactions on Semiconductor Manufacturing (1 paper)Journal of Electronic Materials (1 paper)
Partner nations
United StatesIndiaUnited Kingdom

In The Last Decade

T. Ghani

32 papers receiving 2.4k citations

T. Ghani's Hit Papers

The future transistors 2023 · 346 citations
3460+1+2Years since publication100200300
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

  • it has ≥500 total citations;
  • it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
  • it reaches the top citation threshold in at least one of its specific research topics.
  1. 2023 Nature

Peers

T. Ghani
Comparison fields: 5 of 59
  • Electrical and Electronic Engineering 2.2k
  • Hardware and Architecture 129
  • Atomic and Molecular Physics, and Optics 411
  • Materials Chemistry 507
  • Structural Biology 15
Replace M. Ieong with:
M. Ieong United States
Naoto Horiguchi Belgium
Digh Hisamoto Japan
M. Bohr United States
J. Kavalieros United States
A. Veloso Belgium
S. Biesemans Belgium
Ph. Roussel Belgium
R. Chau United States
Jérôme Mitard Belgium
T. Ghani relative to M. Ieong United States M. Ieong's profile →
Citations per field
00.5×2×3×4.2×
M. Ieong · 1×
Citations per year

Countries citing papers authored by T. Ghani

Since Specialization
Citations

This map shows the geographic impact of T. Ghani's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Ghani with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Ghani more than expected).

Fields of papers citing papers by T. Ghani

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Ghani. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Ghani. The network helps show where T. Ghani may publish in the future.

Co-authors

The 25 scholars most cited alongside T. Ghani, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. Ghani Line = papers co-authored together T. Ghani links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 34 papers — load more, or switch the sort, to bring in the rest.

#Work
1
A Logic Nanotechnology Featuring Strained-Silicon
IEEE Electron Device Letters ·Scott E. Thompson, M Armstrong, C. Auth, S. Cea, R. Chau, G. Glass, T. Hoffman, J. W. Klaus, Zhenqiang Ma, B. McIntyre, A. Murthy, B. Obradovic, L. Shifren, S. Sivakumar, S. Tyagi, T. Ghani, K. Mistry, M. Bohr, Y.A. El-Mansy
2004389
2
A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors
T. Ghani, M Armstrong, C. Auth, M. Bost, P. Charvát, G. Glass, Thomas Hoffmann, Kevin B. Johnson, C. Kenyon, J. W. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, Meredith N. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, Scott E. Thompson, M. Bohr
2004380
3
The future transistors
Nature ·Wei Cao, Huiming Bu, M. Vinet, Min Cao, Shinichi Takagi, Sungwoo Hwang, T. Ghani, Kaustav Banerjee
Hit paper breakdown →		2023346
4
The High-k Solution
IEEE Spectrum ·M. Bohr, R. Chau, T. Ghani, Kaizad Mistry
2007286
5
Effectiveness of reverse body bias for leakage control in scaled dual Vt CMOS ICs
A. Keshavarzi, Shuo Ma, S. Narendra, B. Bloechel, K. Mistry, T. Ghani, Shekhar Borkar, Vivek De
2001132
6
Scaling challenges and device design requirements for high performance sub-50 nm gate length planar CMOS transistors
T. Ghani, K. Mistry, P. Packan, Scott E. Thompson, M. Stettler, S. Tyagi, M. Bohr
2002131
7
Proposal of a Spin Torque Majority Gate Logic
IEEE Electron Device Letters ·Dmitri E. Nikonov, George I. Bourianoff, T. Ghani
2011121
8
In Search of “Forever,” Continued Transistor Scaling One New Material at a Time
IEEE Transactions on Semiconductor Manufacturing ·Scott E. Thompson, R. Chau, T. Ghani, K. Mistry, S. Tyagi, M. Bohr
2005119
9
Delaying forever: Uniaxial strained silicon transistors in a 90nm CMOS technology
K. Mistry, M Armstrong, C. Auth, S. Cea, Tom Coan, T. Ghani, Thomas Hoffmann, A. Murthy, J. Sandford, R. Shaheed, K. Zawadzki, Kedong Zhang, Scott E. Thompson, M. Bohr
2004116
10
13.3 A 7Mb STT-MRAM in 22FFL FinFET Technology with 4ns Read Sensing Time at 0.9V Using Write-Verify-Write Scheme and Offset-Cancellation Sensing Technique
IEEE Conference Proceedings ·Liqiong Wei, Juan G. Alzate, Ümüt Arslan, Justin Brockman, Nilanjan Das, Kevin Fischer, T. Ghani, O. Golonzka, P. Hentges, (unknown), Pulkit Jain, Blake C. Lin, Mesut Meterelliyoz, OrDonnell Jim, Conor Puls, Pedro A. Quintero, Tanaya Sahu, Meenakshi Sekhar, Ajay Vangapaty, C. Wiegand, Fatih Hamzaoglu
2019106
11
Reliability characterization of 32nm high-K and Metal-Gate logic transistor technology
Sangwoo Pae, Ashwin Ashok, (unknown), T. Ghani, Jun He, Seok‐Hee Lee, Karen Lemay, Mark Liu, Ryan Lu, P. Packan, Chris Parker, Richard Purser, A. St. Amour, B. Woolery
201046
12
High performance Hi-K + metal gate strain enhanced transistors on (110) silicon
P. Packan, S. Cea, H. Deshpande, T. Ghani, M.D. Giles, O. Golonzka, M. Hattendorf, R. Kotlyar, Kelin J. Kuhn, A. Murthy, P. Ranade, L. Shifren, C. Weber, K. Zawadzki
200844
13
Effectiveness of reverse body bias for leakage control in scaled dual Vt CMOS ICs
A. Keshavarzi, Shuo Ma, S. Narendra, B. Bloechel, K. Mistry, T. Ghani, Shekhar Borkar, Vivek De
200244
14
Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory
Applied Physics Letters ·Asif Islam Khan, Dmitri E. Nikonov, Sasikanth Manipatruni, T. Ghani, Ian A. Young
201439
15
A high performance 0.25 μm logic technology optimized for 1.8 V operation
M. Bohr, S.S. Ahmed, S. Ahmed, M. Bost, T. Ghani, J. Greason, Robert F. Hainsey, C. Jan, P. Packan, S. Sivakumar, Scott E. Thompson, Jeff Tsung‐Hui Tsai, Shengqi Yang
200232
16
Source/drain extension scaling for 0.1 μm and below channel length MOSFETs
Scott E. Thompson, P. Packan, T. Ghani, M. Stettler, M. Alavi, I. Post, S. Tyagi, S. Ahmed, Shixuan Yang, M. Bohr
200227
17
Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress
Applied Physics Letters ·L. Shifren, X. Wang, Philippe Matagne, B. Obradovic, C. Auth, S. Cea, T. Ghani, Jianli He, T. Hoffman, R. Kotlyar, Zhenqiang Ma, K. Mistry, Ramune Nagisetty, R. Shaheed, M. Stettler, C. Weber, M.D. Giles
200424
18
Effect of oxygen on minority-carrier lifetime and recombination currents in Si1−xGex heterostructure devices
Applied Physics Letters ·T. Ghani, Judy L. Hoyt, D. B. Noble, J. F. Gibbons, J. E. Turner, T. I. Kamins
199123
19
Understanding stress enhanced performance in Intel 90nm CMOS technology
M.D. Giles, M Armstrong, C. Auth, S. Cea, T. Ghani, Thomas Hoffmann, R. Kotlyar, Philippe Matagne, K. Mistry, Ramune Nagisetty, B. Obradovic, R. Shaheed, L. Shifren, M. Stettler, S. Tyagi, Xielin Wang, C. Weber, K. Zawadzki
200421
20
Asymmetric source/drain extension transistor structure for high performance sub-50 nm gate length CMOS devices
T. Ghani, K. Mistry, P. Packan, Marilyn Armstrong, Scott E. Thompson, S. Tyagi, M. Bohr
200218

About T. Ghani

T. Ghani is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics, Anesthesiology and Pain Medicine and Hardware and Architecture, having authored 34 papers that have together received 2.5k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (24 papers), Semiconductor materials and devices (23 papers), Nanowire Synthesis and Applications (5 papers), Silicon Carbide Semiconductor Technologies (5 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Advancements in Photolithography Techniques (4 papers), Silicon and Solar Cell Technologies (3 papers) and Semiconductor materials and interfaces (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.2k citations), Hardware and Architecture (129 citations), Atomic and Molecular Physics, and Optics (411 citations), Materials Chemistry (507 citations) and Structural Biology (15 citations). T. Ghani has collaborated with scholars based in United States, India and United Kingdom. Frequent co-authors include M. Bohr, K. Mistry, R. Chau, Scott E. Thompson, Kaizad Mistry, S. Tyagi, A. Murthy, Dmitri E. Nikonov, C. Auth and M Armstrong. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Nature, IEEE Transactions on Semiconductor Manufacturing and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by M. IeongBreakdown of academic impact, for papers by Naoto HoriguchiBreakdown of academic impact, for papers by Digh HisamotoBreakdown of academic impact, for papers by M. BohrBreakdown of academic impact, for papers by J. KavalierosBreakdown of academic impact, for papers by A. VelosoBreakdown of academic impact, for papers by S. BiesemansBreakdown of academic impact, for papers by Ph. RousselBreakdown of academic impact, for papers by R. ChauBreakdown of academic impact, for papers by Jérôme Mitard