J. E. Turner

1.8k citations

49 papers · 1.6k · h-index 22

Impact in

Catalysis top 5%
- Catalysis and Oxidation Reactions
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces
- Advanced Chemical Physics Studies

Papers in

Electrical and Electronic Engineering 33
- Semiconductor materials and devices 18
- Silicon and Solar Cell Technologies 14
- Advancements in Semiconductor Devices and Circuit Design 6
Atomic and Molecular Physics, and Optics 25
- Semiconductor materials and interfaces 17
- Semiconductor Quantum Structures and Devices 6

Co-authors: M. B. Maple (6 shared papers)B. C. Sales (4 shared papers)Gábor A. Somorjai (5 shared papers)J. F. Gibbons (10 shared papers)Judy L. Hoyt (9 shared papers)T. I. Kamins (8 shared papers)Andrew J. Gellman (1 shared paper)R.C. Yeates (1 shared paper)
Journals: Applied Physics Letters (10 papers)Surface Science (6 papers)IEEE Transactions on Electron Devices (3 papers)Journal of Electronic Materials (3 papers)Journal of The Electrochemical Society (3 papers)
Partner nations: United States Germany Taiwan

In The Last Decade

J. E. Turner

48 papers receiving 1.5k citations

Peers

Countries citing papers authored by J. E. Turner

Since Specialization

Citations

This map shows the geographic impact of J. E. Turner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. E. Turner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. E. Turner more than expected).

Fields of papers citing papers by J. E. Turner

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. E. Turner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. E. Turner. The network helps show where J. E. Turner may publish in the future.

Co-authors

The 25 scholars most cited alongside J. E. Turner, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. E. Turner Line = papers co-authored together J. E. Turner links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 49 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Oscillatory oxidation of CO over Pt, Pd and Ir catalysts: Theory Surface Science ·B. C. Sales, J. E. Turner, M. B. Maple	1982	268
2	Oscillatory oxidation of Co over a Pt catalyst Surface Science ·J. E. Turner, B. C. Sales, M. B. Maple	1981	147
3	The oscillatory behavior of the CO oxidation reaction at atmospheric pressure over platinum single crystals: Surface analysis and pressure dependent mechanisms Surface Science ·R.C. Yeates, J. E. Turner, Andrew J. Gellman, Gábor A. Somorjai	1985	124
4	Effects of strain on boron diffusion in Si and Si1−xGex Applied Physics Letters ·P. Kuo, Judy L. Hoyt, J. F. Gibbons, J. E. Turner, D. Lefforge	1995	94
5	Oscillatory oxidation of co over Pd and Ir catalysts Surface Science ·J. E. Turner, Brian Sales, M. B. Maple	1981	86
6	The Characterization of Doped Iron Oxide Electrodes for the Photodissociation of Water: Stability, Optical, and Electronic Properties Journal of The Electrochemical Society ·J. E. Turner, M. Hendewerk, J. R. Parmeter, David Neiman, Gábor A. Somorjai	1984	78
7	Comparison of boron diffusion in Si and strained Si1−xGex epitaxial layers Applied Physics Letters ·P. Kuo, Judy L. Hoyt, J. F. Gibbons, J. E. Turner, R. D. Jacowitz, T. I. Kamins	1993	75
8	Oxide formation and reduction over Pt, Pd, and Ir; A driving mechanism for oscillations in the co oxidation reaction Surface Science ·J. E. Turner, M. B. Maple	1984	54
9	Admittance spectroscopy measurements of band offsets in Si/Si1−xGex/Si heterostructures Applied Physics Letters ·K. Nauka, T. I. Kamins, J. E. Turner, C. A. King, Judy L. Hoyt, J. F. Gibbons	1992	45
10	Carbon incorporation in AlGaAs grown by CBE Journal of Crystal Growth ·Byeong‐Joo Lee, Y.M. Houng, J. N. Miller, J. E. Turner	1990	45
11	Hole mobility measurements in heavily doped Si/sub 1-x/Ge/sub x/ strained layers IEEE Transactions on Electron Devices ·T. K. Carns, Sang Kook Chun, M. O. Tanner, K.L. Wang, T. I. Kamins, J. E. Turner, Donald Y.C. Lie, M.−A. Nicolet, R. G. Wilson	1994	39
12	The oxidation and co reduction kinetics of a platinum surface Surface Science ·B. C. Sales, J. E. Turner, M. B. Maple	1981	36
13	Compositional non-uniformities in selective area growth of GaInAs on InP grown by OMVPE Journal of Electronic Materials ·James S. Chang, K. W. Carey, J. E. Turner, Lee A. Hodge	1990	36
14	Kinetics of selective epitaxial deposition of Si1−xGex Applied Physics Letters ·T. I. Kamins, D. Vook, Paul K. L. Yu, J. E. Turner	1992	35
15	Role of ions in electron cyclotron resonance plasma-enhanced chemical vapor deposition of silicon dioxide Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·K. L. Seaward, J. E. Turner, K. Nauka, A. M. E. Nel	1995	34
16	A high-speed bipolar technology featuring self-aligned single-poly base and submicrometer emitter contacts IEEE Electron Device Letters ·W.M. Huang, C.I. Drowley, P.J. Vande Voorde, D. Pettengill, J. E. Turner, A. K. Kapoor, Chrong-Jung Lin, G. Burton, S. J. Rosner, Katherine Brigham, H.-S. Fu, Soo‐Young Oh, M. P. Scott, Shang-Yi Chiang, A. Wang	1990	33
17	Junction leakage in titanium self-aligned silicide devices Applied Physics Letters ·Jun Amano, K. Nauka, M. P. Scott, J. E. Turner, Rick Tsai	1986	30
18	The photodissociation of water by doped iron oxides: The unblased p/n assembly Chemical Physics Letters ·J. E. Turner, M. Hendewerk, Gábor A. Somorjai	1984	29
19	Effect of oxygen on minority-carrier lifetime and recombination currents in Si1−xGex heterostructure devices Applied Physics Letters ·T. Ghani, Judy L. Hoyt, D. B. Noble, J. F. Gibbons, J. E. Turner, T. I. Kamins	1991	27
20	Boron Diffusion in Si and Si_1−xGe_x MRS Proceedings ·P. Kuo, Judy L. Hoyt, J. F. Gibbons, J. E. Turner, D. Lefforge	1995	27

About J. E. Turner

J. E. Turner is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Catalysis and Renewable Energy, Sustainability and the Environment, having authored 49 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (18 papers), Semiconductor materials and interfaces (17 papers), Silicon and Solar Cell Technologies (14 papers), Catalysis and Oxidation Reactions (7 papers), Semiconductor Quantum Structures and Devices (6 papers), Catalytic Processes in Materials Science (6 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and Silicon Nanostructures and Photoluminescence (5 papers). The work is most often cited by research in Catalysis (386 citations), Atomic and Molecular Physics, and Optics (655 citations), Materials Chemistry (652 citations), Renewable Energy, Sustainability and the Environment (213 citations) and Condensed Matter Physics (144 citations). J. E. Turner has collaborated with scholars based in United States, Germany and Taiwan. Frequent co-authors include M. B. Maple, B. C. Sales, Gábor A. Somorjai, J. F. Gibbons, Judy L. Hoyt, T. I. Kamins, Andrew J. Gellman, R.C. Yeates, M. Hendewerk and Brian Sales. Their work appears in journals such as Applied Physics Letters, Surface Science, IEEE Transactions on Electron Devices, Journal of Electronic Materials and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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