I. Post

2.0k citations

20 papers · 360 · h-index 9

Impact in

Electrical and Electronic Engineering top 10%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Radio Frequency Integrated Circuit Design
- Thin-Film Transistor Technologies
- Low-power high-performance VLSI design
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 20
- Semiconductor materials and devices 16
- Advancements in Semiconductor Devices and Circuit Design 14
- Radio Frequency Integrated Circuit Design 4
- Integrated Circuits and Semiconductor Failure Analysis 4
- Electrostatic Discharge in Electronics 2
- Thin-Film Transistor Technologies 2
Atomic and Molecular Physics, and Optics 4
- Semiconductor materials and interfaces 4

Co-authors: P. Ashburn (10 shared papers)P. Packan (3 shared papers)Kelin J. Kuhn (4 shared papers)C. J. Gibbings (2 shared papers)D. Becher (1 shared paper)M. Hattendorf (1 shared paper)D. J. Godfrey (2 shared papers)P. Vandervoorn (1 shared paper)
Journals: IEEE Transactions on Electron Devices (3 papers)Microelectronic Engineering (2 papers)IEEE Electron Device Letters (1 paper)Electronics Letters (1 paper)Journal of Applied Physics (1 paper)
Partner nations: United Kingdom United States

In The Last Decade

I. Post

19 papers receiving 349 citations

Peers

Countries citing papers authored by I. Post

Since Specialization

Citations

This map shows the geographic impact of I. Post's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Post with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Post more than expected).

Fields of papers citing papers by I. Post

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Post. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Post. The network helps show where I. Post may publish in the future.

Co-authors

The 25 scholars most cited alongside I. Post, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with I. Post Line = papers co-authored together I. Post links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Polysilicon emitters for bipolar transistors: a review and re-evaluation of theory and experiment IEEE Transactions on Electron Devices ·I. Post, P. Ashburn, G.R. Wolstenholme	1992	87
2	A comparison of state-of-the-art NMOS and SiGe HBT devices for analog/mixed-signal/RF circuit applications Kelin J. Kuhn, R. Basco, D. Becher, M. Hattendorf, P. Packan, I. Post, P. Vandervoorn, Ian A. Young	2004	43
3	A 65nm CMOS SOC Technology Featuring Strained Silicon Transistors for RF Applications I. Post, M.S. Akbar, G. Curello, S. Gannavaram, W. Hafez, U. Jalan, K. Komeyli, Jiefeng Lin, N. Lindert, Jang Hyeok Park, J. Rizk, G. Sacks, C. Tsai, David Yeh, Peng Bai, C.-H. Jan	2006	37
4	Bias temperature instability variation on SiON/Poly, HK/MG and trigate architectures C. Prasad, M. Agostinelli, J. Hicks, S. Ramey, C. Auth, K. Mistry, S. Natarajan, P. Packan, I. Post, Srinivas Bodapati, M.D. Giles, Sarthak Gupta, S. Mudanai, Kelin J. Kuhn	2014	34
5	Investigation of boron diffusion in polysilicon and its application to the design of p-n-p polysilicon emitter bipolar transistors with shallow emitter junctions IEEE Transactions on Electron Devices ·I. Post, P. Ashburn	1991	32
6	Source/drain extension scaling for 0.1 μm and below channel length MOSFETs Scott E. Thompson, P. Packan, T. Ghani, M. Stettler, M. Alavi, I. Post, S. Tyagi, S. Ahmed, Shixuan Yang, M. Bohr	2002	28
7	The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors IEEE Transactions on Electron Devices ·Z.A. Shafi, C. J. Gibbings, P. Ashburn, I. Post, C. G. Tuppen, D. J. Godfrey	1991	28
8	A 1.1GHz 12μA/Mb-Leakage SRAM Design in 65nm Ultra-Low-Power CMOS with Integrated Leakage Reduction for Mobile Applications Yuxiao Wang, Jiefeng Lin, Yat Hon Ng, I. Post, Lin Wei, Yu Zhang, Kedong Zhang, M. Bohr, Hong Jo Ahn, Uma Bhattacharya, Tom Coan, Fatih Hamzaoglu, W. Hafez, C.-H. Jan, P. Kolar, S. Kulkarni	2007	25
9	Analysis and modeling of the base currents of Si/Si1−xGex heterojunction bipolar transistors fabricated in high and low oxygen content material Journal of Applied Physics ·Z.A. Shafi, P. Ashburn, I. Post, David J. Robbins, Wai Yie Leong, C. J. Gibbings, S. Nigrin	1995	9
10	Characterisation of heterojunction bipolar transistors incorporating Si/Si1−xGex epitaxial double layers with n+ emitter implants Microelectronic Engineering ·D L Robbins, WY Leong, J. L. Glasper, A. J. Pidduck, R.M. Jackson, I. Post, Z.A. Shafi, P. Ashburn	1992	5
11	Rapid thermal annealing of metastable and stable Si/Si1−xGex heterojunction bipolar transistors Microelectronic Engineering ·Z.A. Shafi, Audrey Martin, J. S. Whitehurst, P. Ashburn, D. J. Godfrey, C.J. Gibblings, I. Post, C. G. Tuppen, G. R. Booker, Mark Jones	1991	5
12	Reliability studies on a 45nm low power system-on-chip (SoC) dual gate oxide high-k / metal gate (DG HK+MG) technology C. Prasad, Peng Bai, S. Gannavaram, W. Hafez, J. Hicks, C.-H. Jan, Jyi-Tsong Lin, M. Jones, K. Komeyli, R. Kotlyar, K. Mistry, I. Post, C. Tsai	2010	5
13	Electrical method for measuring emitter depth of shallow bipolar transistors Electronics Letters ·I. Post, P. Ashburn	1990	5
14	Modeling and characterization of noise of polysilicon emitter bipolar transistors N. Siabi-Shahrivar, W. Redman-White, P. Ashburn, I. Post	2002	4
15	Scaling challenges for 0.13 μm generation shallow trench isolation Kelin J. Kuhn, Din-how Mei, I. Post, J. Neirynck	2002	4
16	Low frequency noise of npn/pnp polysilicon emitter bipolar transistors ePrints Soton (University of Southampton) ·N. Siabi-Shahrivar, W. Redman-White, P. Ashburn, I. Post	1990	3
17	Si 1-x ,Ge x Heterojunction Bipolar Transistors: the future of silicon bipolar technology or not? European Solid-State Device Research Conference ·P. Ashbum, Z.A. Shafi, I. Post, H.J. Gregory	1993	2
18	ACUTE: a high performance analog complementary polysilicon emitter bipolar technology utilizing SOI/trench full dielectric isolation R. Jerome, I. Post, Tomáš Trávníček, G.M. Wodek, K.E. Huffstater, Dennis R. Williams	2002	2
19	The use of an interface anneal to control the base current and emitter resistance of p-n-p polysilicon emitter bipolar transistors IEEE Electron Device Letters ·I. Post, P. Ashburn	1992	1
20	Future device scaling - Beyond traditional CMOS S. Tyagi, C. Auth, Ibrahim Ban, Peter Chang, R. Chau, T. Ghani, C-H. Jan, J. Kavalieros, Kelin J. Kuhn, J. Maiz, K. Mistry, I. Post	2009	1

About I. Post

I. Post is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Condensed Matter Physics and Computational Mechanics, having authored 20 papers that have together received 360 indexed citations. Recurring topics across this work include Semiconductor materials and devices (16 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers), Radio Frequency Integrated Circuit Design (4 papers), Integrated Circuits and Semiconductor Failure Analysis (4 papers), Semiconductor materials and interfaces (4 papers), Silicon Nanostructures and Photoluminescence (3 papers), Electrostatic Discharge in Electronics (2 papers) and Thin-Film Transistor Technologies (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (354 citations), Atomic and Molecular Physics, and Optics (89 citations), Hardware and Architecture (12 citations), Materials Chemistry (33 citations) and Biomedical Engineering (30 citations). I. Post has collaborated with scholars based in United Kingdom and United States. Frequent co-authors include P. Ashburn, P. Packan, Kelin J. Kuhn, C. J. Gibbings, D. Becher, M. Hattendorf, D. J. Godfrey, P. Vandervoorn, Ian A. Young and C. G. Tuppen. Their work appears in journals such as IEEE Transactions on Electron Devices, Microelectronic Engineering, IEEE Electron Device Letters, Electronics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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