Scott E. Thompson

7.4k citations

92 papers · 4.8k · 3 hit papers · h-index 29

Impact in

Electrical and Electronic Engineering top 0.5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Negative Capacitance Devices
- Low-power high-performance VLSI design
Structural Biology top 5%

Papers in

Electrical and Electronic Engineering 82
- Advancements in Semiconductor Devices and Circuit Design 66
- Semiconductor materials and devices 63
- Integrated Circuits and Semiconductor Failure Analysis 29
- Silicon Carbide Semiconductor Technologies 11
- Ferroelectric and Negative Capacitance Devices 5
Atomic and Molecular Physics, and Optics 13
- Semiconductor materials and interfaces 6

Co-authors: Toshikazu Nishida (45 shared papers)Srivatsan Parthasarathy (4 shared papers)Guangyu Sun (9 shared papers)Yongke Sun (13 shared papers)Yubing Sun (4 shared papers)Youn Sung Choi (7 shared papers)M. Bohr (12 shared papers)T. Ghani (9 shared papers)
Journals: Journal of Applied Physics (13 papers)Applied Physics Letters (7 papers)IEEE Electron Device Letters (7 papers)IEEE Transactions on Nuclear Science (4 papers)IEEE Transactions on Electron Devices (3 papers)
Partner nations: United States United Kingdom Belgium

In The Last Decade

Scott E. Thompson

89 papers receiving 4.5k citations

Scott E. Thompson's Hit Papers

align trajectories log scale

Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors 2007 · 417 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2007 Journal of Applied Physics
2006 Materials Today
2006 IEEE Transactions on Electron Devices

Peers

Countries citing papers authored by Scott E. Thompson

Since Specialization

Citations

This map shows the geographic impact of Scott E. Thompson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Scott E. Thompson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Scott E. Thompson more than expected).

Fields of papers citing papers by Scott E. Thompson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Scott E. Thompson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Scott E. Thompson. The network helps show where Scott E. Thompson may publish in the future.

Co-authors

The 25 scholars most cited alongside Scott E. Thompson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Scott E. Thompson Line = papers co-authored together Scott E. Thompson links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 92 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Moore's law: the future of Si microelectronics Materials Today ·Scott E. Thompson, Srivatsan Parthasarathy Hit paper breakdown →	2006	524
2	Uniaxial-process-induced strained-Si: extending the CMOS roadmap IEEE Transactions on Electron Devices ·Scott E. Thompson, Guangyu Sun, Youn Sung Choi, Toshikazu Nishida Hit paper breakdown →	2006	481
3	Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors Journal of Applied Physics ·Yubing Sun, Scott E. Thompson, Toshikazu Nishida Hit paper breakdown →	2007	417
4	A Logic Nanotechnology Featuring Strained-Silicon IEEE Electron Device Letters ·Scott E. Thompson, M Armstrong, C. Auth, S. Cea, R. Chau, G. Glass, T. Hoffman, J. W. Klaus, Zhenqiang Ma, B. McIntyre, A. Murthy, B. Obradovic, L. Shifren, S. Sivakumar, S. Tyagi, T. Ghani, K. Mistry, M. Bohr, Y.A. El-Mansy	2004	415
5	A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors T. Ghani, M Armstrong, C. Auth, M. Bost, P. Charvát, G. Glass, Thomas Hoffmann, Kevin B. Johnson, C. Kenyon, J. W. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, Meredith N. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, Scott E. Thompson, M. Bohr	2004	406
6	Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs Annual Review of Materials Research ·Min Chu, Yongke Sun, U. Aghoram, Scott E. Thompson	2009	302
7	Comparison of Threshold-Voltage Shifts for Uniaxial and Biaxial Tensile-Stressed n-MOSFETs IEEE Electron Device Letters ·Jong Sung Lim, Scott E. Thompson, J.G. Fossum	2004	158
8	Strain Effect in Semiconductors Yongke Sun, Scott E. Thompson, Toshikazu Nishida	2009	153
9	MOS Scaling: Transistor Challenges for the 21st Century Scott E. Thompson	1998	153
10	In Search of “Forever,” Continued Transistor Scaling One New Material at a Time IEEE Transactions on Semiconductor Manufacturing ·Scott E. Thompson, R. Chau, T. Ghani, K. Mistry, S. Tyagi, M. Bohr	2005	134
11	Scaling challenges and device design requirements for high performance sub-50 nm gate length planar CMOS transistors T. Ghani, K. Mistry, P. Packan, Scott E. Thompson, M. Stettler, S. Tyagi, M. Bohr	2002	133
12	Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs Scott E. Thompson, Guangyu Sun, Kai-Bin Wu, Jung-Hwan Lim, Toshikazu Nishida	2005	122
13	Delaying forever: Uniaxial strained silicon transistors in a 90nm CMOS technology K. Mistry, M Armstrong, C. Auth, S. Cea, Tom Coan, T. Ghani, Thomas Hoffmann, A. Murthy, J. Sandford, R. Shaheed, K. Zawadzki, Kedong Zhang, Scott E. Thompson, M. Bohr	2004	118
14	Strain effect in semiconductors : theory and device applications Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)) ·Yongke Sun, Scott E. Thompson, Toshikazu Nishida	2010	93
15	Hole mobility in silicon inversion layers: Stress and surface orientation Journal of Applied Physics ·Guangyu Sun, Yongke Sun, Toshikazu Nishida, Scott E. Thompson	2007	81
16	Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High ($\sim$1.5 GPa) Channel Stress IEEE Electron Device Letters ·S. Suthram, John C. Ziegert, Toshikazu Nishida, Scott E. Thompson	2007	75
17	Future of Strained Si/Semiconductors in Nanoscale MOSFETs Scott E. Thompson, S. Suthram, Yubing Sun, Guangyu Sun, Srinivasan Parthasarathy, Min Chu, Toshikazu Nishida	2006	67
18	Mobility enhancement IEEE Circuits and Devices Magazine ·Nidhi Mohta, Scott E. Thompson	2005	52
19	Advanced channel engineering achieving aggressive reduction of V<inf>T</inf> variation for ultra-low-power applications K. Fujita, Y. Torii, M. Hori, Jungwoo Oh, L. Shifren, P. Ranade, M. Nakagawa, Kohki Okabe, T. Miyake, K. Ohkoshi, M. Kuramae, Toshihiko Mori, T. Tsuruta, Scott E. Thompson, T. Ema	2011	47
20	Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon Journal of Applied Physics ·Mehmet O. Baykan, Scott E. Thompson, Toshikazu Nishida	2010	46

About Scott E. Thompson

Scott E. Thompson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry and Condensed Matter Physics, having authored 92 papers that have together received 4.8k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (66 papers), Semiconductor materials and devices (63 papers), Integrated Circuits and Semiconductor Failure Analysis (29 papers), Silicon Carbide Semiconductor Technologies (11 papers), Nanowire Synthesis and Applications (11 papers), Semiconductor materials and interfaces (6 papers), Ferroelectric and Negative Capacitance Devices (5 papers) and Electronic and Structural Properties of Oxides (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (4.1k citations), Structural Biology (59 citations), Biomedical Engineering (1.3k citations), Atomic and Molecular Physics, and Optics (785 citations) and Materials Chemistry (852 citations). Scott E. Thompson has collaborated with scholars based in United States, United Kingdom and Belgium. Frequent co-authors include Toshikazu Nishida, Srivatsan Parthasarathy, Guangyu Sun, Yongke Sun, Yubing Sun, Youn Sung Choi, M. Bohr, T. Ghani, Min Chu and K. Mistry. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, IEEE Electron Device Letters, IEEE Transactions on Nuclear Science and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Scott E. Thompson's Hit Papers

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