P. Packan

2.8k citations

34 papers · 1.2k · h-index 19

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Ferroelectric and Negative Capacitance Devices
- Low-power high-performance VLSI design
- Silicon Carbide Semiconductor Technologies
Structural Biology

Papers in

Electrical and Electronic Engineering 34
- Advancements in Semiconductor Devices and Circuit Design 24
- Semiconductor materials and devices 23
- Integrated Circuits and Semiconductor Failure Analysis 12
- Silicon and Solar Cell Technologies 10
- Silicon Carbide Semiconductor Technologies 4
- Low-power high-performance VLSI design 4
- Thin-Film Transistor Technologies 3
Atomic and Molecular Physics, and Optics 4

Co-authors: J.D. Plummer (4 shared papers)T. Ghani (9 shared papers)M. Bohr (8 shared papers)K. Mistry (6 shared papers)Scott E. Thompson (7 shared papers)S. Tyagi (5 shared papers)S. Mudanai (7 shared papers)M. Stettler (2 shared papers)
Journals: Applied Physics Letters (2 papers)MRS Bulletin (1 paper)Journal of Applied Physics (1 paper)Microelectronic Engineering (1 paper)Science (1 paper)
Partner nations: United States Germany

In The Last Decade

P. Packan

32 papers receiving 1.1k citations

Peers

Countries citing papers authored by P. Packan

Since Specialization

Citations

This map shows the geographic impact of P. Packan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Packan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Packan more than expected).

Fields of papers citing papers by P. Packan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Packan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Packan. The network helps show where P. Packan may publish in the future.

Co-authors

The 25 scholars most cited alongside P. Packan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Packan Line = papers co-authored together P. Packan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 34 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Pushing the Limits Science ·P. Packan	1999	337
2	Scaling challenges and device design requirements for high performance sub-50 nm gate length planar CMOS transistors T. Ghani, K. Mistry, P. Packan, Scott E. Thompson, M. Stettler, S. Tyagi, M. Bohr	2002	133
3	Transient diffusion of low-concentration B in Si due to 29Si implantation damage Applied Physics Letters ·P. Packan, J.D. Plummer	1990	73
4	Transistor aging and reliability in 14nm tri-gate technology S. Novak, C. Parker, D. Becher, Miao Liu, M. Agostinelli, Manisha Chahal, P. Packan, P. Nayak, S. Ramey, S. Natarajan	2015	60
5	A comparison of state-of-the-art NMOS and SiGe HBT devices for analog/mixed-signal/RF circuit applications Kelin J. Kuhn, R. Basco, D. Becher, M. Hattendorf, P. Packan, I. Post, P. Vandervoorn, Ian A. Young	2004	48
6	Reliability characterization of 32nm high-K and Metal-Gate logic transistor technology Sangwoo Pae, Ashwin Ashok, (unknown), T. Ghani, Jun He, Seok‐Hee Lee, Karen Lemay, Mark Liu, Ryan Lu, P. Packan, Chris Parker, Richard Purser, A. St. Amour, B. Woolery	2010	48
7	High performance Hi-K + metal gate strain enhanced transistors on (110) silicon P. Packan, S. Cea, H. Deshpande, T. Ghani, M.D. Giles, O. Golonzka, M. Hattendorf, R. Kotlyar, Kelin J. Kuhn, A. Murthy, P. Ranade, L. Shifren, C. Weber, K. Zawadzki	2008	45
8	High sigma measurement of random threshold voltage variation in 14nm Logic FinFET technology M.D. Giles, N. Arkali Radhakrishna, D. Becher, A. Kornfeld, K. Maurice, S. Mudanai, S. Natarajan, P. Newman, P. Packan, Titash Rakshit	2015	40
9	Temperature and time dependence of B and P diffusion in Si during surface oxidation Journal of Applied Physics ·P. Packan, J.D. Plummer	1990	37
10	Bias temperature instability variation on SiON/Poly, HK/MG and trigate architectures C. Prasad, M. Agostinelli, J. Hicks, S. Ramey, C. Auth, K. Mistry, S. Natarajan, P. Packan, I. Post, Srinivas Bodapati, M.D. Giles, Sarthak Gupta, S. Mudanai, Kelin J. Kuhn	2014	36
11	A high performance 0.25 μm logic technology optimized for 1.8 V operation M. Bohr, S.S. Ahmed, S. Ahmed, M. Bost, T. Ghani, J. Greason, Robert F. Hainsey, C. Jan, P. Packan, S. Sivakumar, Scott E. Thompson, Jeff Tsung‐Hui Tsai, Shengqi Yang	2002	36
12	A three-transistor threshold voltage model for halo processes R. Rios, Wei-Kai Shih, A. Shah, S. Mudanai, P. Packan, T. Sandford, K. Mistry	2003	35
13	Source/drain extension scaling for 0.1 μm and below channel length MOSFETs Scott E. Thompson, P. Packan, T. Ghani, M. Stettler, M. Alavi, I. Post, S. Tyagi, S. Ahmed, Shixuan Yang, M. Bohr	2002	29
14	An efficient surface potential solution algorithm for compact MOSFET models R. Rios, S. Mudanai, Wei-Kai Shih, P. Packan	2005	28
15	A general partition scheme for gate leakage current suitable for MOSFET compact models Wei-Kai Shih, R. Rios, P. Packan, K. Mistry, T. Abbott	2002	24
16	Scaling Transistors into the Deep-Submicron Regime MRS Bulletin ·P. Packan	2000	21
17	Linear versus saturated drive current: tradeoffs in super steep retrograde well engineering Scott E. Thompson, P. Packan, M. Bohr	2002	20
18	100 nm gate length high performance/low power CMOS transistor structure T. Ghani, S. Ahmed, P. Aminzadeh, J. Bielefeld, P. Charvát, (unknown), M. Harper, P. Jacob, C. Jan, J. Kavalieros, C. Kenyon, Ramune Nagisetty, P. Packan, J. Sebastián, M.R. Taylor, Jai-Lin Tsai, Sarika Tyagi, Song Yang, M. Bohr	2003	19
19	Analytical Modeling of Output Conductance in Long-Channel Halo-Doped MOSFETs IEEE Transactions on Electron Devices ·S. Mudanai, W.-K. Shih, R. Rios, X. Xi, Jung-Hoon Rhew, Kelin J. Kuhn, P. Packan	2006	18
20	Asymmetric source/drain extension transistor structure for high performance sub-50 nm gate length CMOS devices T. Ghani, K. Mistry, P. Packan, Marilyn Armstrong, Scott E. Thompson, S. Tyagi, M. Bohr	2002	18

About P. Packan

P. Packan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Computational Mechanics, Mechanics of Materials and Hardware and Architecture, having authored 34 papers that have together received 1.2k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (24 papers), Semiconductor materials and devices (23 papers), Integrated Circuits and Semiconductor Failure Analysis (12 papers), Silicon and Solar Cell Technologies (10 papers), Silicon Carbide Semiconductor Technologies (4 papers), Low-power high-performance VLSI design (4 papers), Ion-surface interactions and analysis (4 papers) and Thin-Film Transistor Technologies (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Structural Biology (10 citations), Hardware and Architecture (42 citations), Atomic and Molecular Physics, and Optics (179 citations) and Materials Chemistry (192 citations). P. Packan has collaborated with scholars based in United States and Germany. Frequent co-authors include J.D. Plummer, T. Ghani, M. Bohr, K. Mistry, Scott E. Thompson, S. Tyagi, S. Mudanai, M. Stettler, R. Rios and D. Becher. Their work appears in journals such as Applied Physics Letters, MRS Bulletin, Journal of Applied Physics, Microelectronic Engineering and Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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