H. C. Lin

1.7k citations

40 papers · 1.4k · h-index 19

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 39
- Semiconductor materials and devices 34
- Advancements in Semiconductor Devices and Circuit Design 20
- Integrated Circuits and Semiconductor Failure Analysis 7
- Ferroelectric and Negative Capacitance Devices 5
- Silicon and Solar Cell Technologies 4
- Photonic and Optical Devices 4
Materials Chemistry 12
- Electronic and Structural Properties of Oxides 9

Co-authors: G. D. Wilk (5 shared papers)Yi Xuan (8 shared papers)Guy Brammertz (11 shared papers)Marc Meuris (10 shared papers)Marc Heyns (10 shared papers)P. D. Ye (3 shared papers)Peide D. Ye (3 shared papers)Matty Caymax (9 shared papers)
Journals: Applied Physics Letters (16 papers)Microelectronic Engineering (3 papers)Journal of The Electrochemical Society (2 papers)ECS Journal of Solid State Science and Technology (2 papers)IEEE Transactions on Advanced Packaging (1 paper)
Partner nations: Belgium United States Germany

In The Last Decade

H. C. Lin

40 papers receiving 1.3k citations

Peers

Countries citing papers authored by H. C. Lin

Since Specialization

Citations

This map shows the geographic impact of H. C. Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. C. Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. C. Lin more than expected).

Fields of papers citing papers by H. C. Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. C. Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. C. Lin. The network helps show where H. C. Lin may publish in the future.

Co-authors

The 25 scholars most cited alongside H. C. Lin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H. C. Lin Line = papers co-authored together H. C. Lin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 40 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs Applied Physics Letters ·H. C. Lin, P. D. Ye, G. D. Wilk	2005	205
2	Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric IEEE Electron Device Letters ·Yi Xuan, Yanqing Wu, H. C. Lin, Tian Shen, Peide D. Ye	2007	156
3	Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric Applied Physics Letters ·Yi Xuan, H. C. Lin, P. D. Ye, G. D. Wilk	2006	126
4	Capacitance-voltage characterization of GaAs–Al2O3 interfaces Applied Physics Letters ·Guy Brammertz, H. C. Lin, Koen Martens, David Mercier, Sonja Sioncke, Annelies Delabie, W. E. Wang, Matty Caymax, Marc Meuris, Marc Heyns	2008	94
5	On the interface state density at In0.53Ga0.47As/oxide interfaces Applied Physics Letters ·Guy Brammertz, H. C. Lin, Matty Caymax, Marc Meuris, Marc Heyns, M. Passlack	2009	93
6	Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator Microelectronic Engineering ·H. C. Lin, Wei Wang, Guy Brammertz, Marc Meuris, Marc Heyns	2009	91
7	Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors Applied Physics Letters ·Tian‐Li Wu, Denis Marcon, Benoit Bakeroot, Brice De Jaeger, H. C. Lin, J. Franco, Steve Stoffels, M. Van Hove, Robin Roelofs, G. Groeseneken, Stefaan Decoutere	2015	61
8	Electrical Properties of III-V/Oxide Interfaces ECS Transactions ·Guy Brammertz, H. C. Lin, Koen Martens, Ali-Reza Alian, Clément Merckling, J. Penaud, David Kohen, Wei Wang, Sonja Sioncke, Annelies Delabie, Marc Meuris, Matty Caymax, Marc Heyns	2009	55
9	Capacitance–Voltage Characterization of GaAs–Oxide Interfaces Journal of The Electrochemical Society ·Guy Brammertz, H. C. Lin, Koen Martens, David Mercier, Clément Merckling, J. Penaud, Christoph Adelmann, Sonja Sioncke, W. E. Wang, Matty Caymax, Marc Meuris, M. M. Heyns	2008	50
10	The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces Applied Physics Letters ·H. C. Lin, Guy Brammertz, Koen Martens, G. de Valicourt, Laurent Negre, Wei Wang, Wilman Tsai, Marc Meuris, Marc Heyns	2009	46
11	Characterization of Parylene-N as Flexible Substrate and Passivation Layer for Microwave and Millimeter-Wave Integrated Circuits IEEE Transactions on Advanced Packaging ·Hasan Sharifi, Rosa R. Lahiji, H. C. Lin, Peide D. Ye, L.P.B. Katehi, Saeed Mohammadi	2009	41
12	Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric Applied Physics Letters ·H. C. Lin, Tao Yang, Hasan Sharifi, S. K. Kim, Yi Xuan, Tian Shen, Saeed Mohammadi, P. D. Ye	2007	39
13	Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps Applied Physics Letters ·Abhitosh Vais, H. C. Lin, Chunmeng Dou, Koen Martens, Tsvetan Ivanov, Qi Xie, Fu Tang, Michael Givens, Jan Willem Maes, Nadine Collaert, Jean‐Pierre Raskin, Kristin DeMeyer, Aaron Thean	2015	23
14	Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al2O3 on GaAs Applied Physics Letters ·Yanqing Wu, H. C. Lin, P. D. Ye, G. D. Wilk	2007	23
15	Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces Applied Physics Letters ·A. Alian, Guy Brammertz, Clément Merckling, Andrea Firrincieli, Wei Wang, H. C. Lin, Matty Caymax, Marc Meuris, K. De Meyer, Marc Heyns	2011	23
16	Current-transport properties of atomic-layer-deposited ultrathin Al2O3 on GaAs Solid-State Electronics ·H. C. Lin, P.D. Ye, G. D. Wilk	2006	21
17	VCSELs with monolithic coupling to internal horizontal waveguides using integrated diffraction gratings Electronics Letters ·D.A. Louderback, Gregory Pickrell, H. C. Lin, M.A. Fish, J.J. Hindi, Peter S. Guilfoyle	2004	20
18	Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks Applied Physics Letters ·Abhitosh Vais, J. Franco, H. C. Lin, Nadine Collaert, A. Mocuta, K. De Meyer, Aaron Thean	2015	18
19	Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric Applied Physics Letters ·Yi Xuan, P. D. Ye, H. C. Lin, G. D. Wilk	2006	18
20	Atomic Layer Deposition of High-κ Dielectrics on Sulphur-Passivated Germanium Journal of The Electrochemical Society ·Sonja Sioncke, H. C. Lin, Guy Brammertz, Annelies Delabie, Thierry Conard, Alexis Franquet, Marc Meuris, Herbert Struyf, Stefan De Gendt, Marc Heyns, Claudia Fleischmann, K. Temst, A. Vantomme, Matthias Müller, Michael Kolbe, Burkhard Beckhoff, Matty Caymax	2011	18

About H. C. Lin

H. C. Lin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 40 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (34 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers), Electronic and Structural Properties of Oxides (9 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers), Ferroelectric and Negative Capacitance Devices (5 papers), Silicon and Solar Cell Technologies (4 papers), Semiconductor materials and interfaces (4 papers) and Photonic and Optical Devices (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.3k citations), Atomic and Molecular Physics, and Optics (461 citations), Condensed Matter Physics (113 citations), Materials Chemistry (440 citations) and Electronic, Optical and Magnetic Materials (107 citations). H. C. Lin has collaborated with scholars based in Belgium, United States and Germany. Frequent co-authors include G. D. Wilk, Yi Xuan, Guy Brammertz, Marc Meuris, Marc Heyns, P. D. Ye, Peide D. Ye, Matty Caymax, Yanqing Wu and Tian Shen. Their work appears in journals such as Applied Physics Letters, Microelectronic Engineering, Journal of The Electrochemical Society, ECS Journal of Solid State Science and Technology and IEEE Transactions on Advanced Packaging.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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