Bert Brijs

3.3k citations

118 papers · 2.4k · h-index 25

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
Electronic, Optical and Magnetic Materials top 5%
- Copper Interconnects and Reliability

Papers in

Electrical and Electronic Engineering 101
- Semiconductor materials and devices 71
- Integrated Circuits and Semiconductor Failure Analysis 35
- Silicon and Solar Cell Technologies 22
- Advancements in Semiconductor Devices and Circuit Design 15
Computational Mechanics 34
- Ion-surface interactions and analysis 32

Co-authors: Wilfried Vandervorst (49 shared papers)Karen Maex (15 shared papers)Thierry Conard (36 shared papers)Matty Caymax (27 shared papers)Olivier Richard (26 shared papers)H. Bender (24 shared papers)Annelies Delabie (16 shared papers)M.-Y. Ho (3 shared papers)
Journals: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (23 papers)Applied Physics Letters (11 papers)Journal of The Electrochemical Society (9 papers)Journal of Applied Physics (8 papers)Applied Surface Science (7 papers)
Partner nations: Belgium United States Germany

In The Last Decade

Bert Brijs

116 papers receiving 2.3k citations

Peers

Countries citing papers authored by Bert Brijs

Since Specialization

Citations

This map shows the geographic impact of Bert Brijs's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bert Brijs with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bert Brijs more than expected).

Fields of papers citing papers by Bert Brijs

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bert Brijs. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bert Brijs. The network helps show where Bert Brijs may publish in the future.

Co-authors

The 25 scholars most cited alongside Bert Brijs, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Bert Brijs Line = papers co-authored together Bert Brijs links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 118 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers Journal of Applied Physics ·M. L. Green, M.-Y. Ho, B. Busch, G. D. Wilk, T. Sorsch, T. Conard, Bert Brijs, Wilfried Vandervorst, Petri I. Räisänen, David A. Muller, M. Bude, J. L. Grazul	2002	241
2	Influence of the electron mean free path on the resistivity of thin metal films Microelectronic Engineering ·W. Zhang, Sywert Brongersma, (unknown), Bert Brijs, Roger Palmans, Ludo Froyen, Karen Maex	2004	191
3	Ternary rare-earth metal oxide high-k layers on silicon oxide Applied Physics Letters ·Chao Zhao, T. Witters, Bert Brijs, H. Bender, Olivier Richard, Matty Caymax, T. Heeg, J. Schubert, V. V. Afanas’ev, A. Stesmans, Darrell G. Schlom	2005	114
4	Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon Applied Physics Letters ·Martin M. Frank, Yves J. Chabal, Martin L. Green, Annelies Delabie, Bert Brijs, G. D. Wilk, M.-Y. Ho, E. B. O. da Rosa, I. J. R. Baumvol, F. C. Stedile	2003	104
5	Ion-implantation issues in the formation of shallow junctions in germanium Materials Science in Semiconductor Processing ·Eddy Simoen, A. Satta, A. D’Amore, T. Janssens, Trudo Clarysse, Koen Martens, Brice De Jaeger, A. Benedetti, I. Hoflijk, Bert Brijs, M. Meuris, Wilfried Vandervorst	2006	96
6	Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions Applied Physics Letters ·Bartek Pawlak, R. Surdeanu, B. Colombeau, A. J. Smith, N. E. B. Cowern, Richard Lindsay, W. Vandervorst, Bert Brijs, Olivier Richard, F. Cristiano	2004	86
7	Deposition of HfO2 on germanium and the impact of surface pretreatments Applied Physics Letters ·Sven Van Elshocht, Bert Brijs, Matty Caymax, Thierry Conard, T. Chiarella, Stefan De Gendt, Brice De Jaeger, Stefan Kubicek, Marc Meuris, Bart Onsia, Olivier Richard, Ivo Teerlinck, Jan Van Steenbergen, Chao Zhao, Marc Heyns	2004	86
8	Atomic layer deposition of hafnium oxide on germanium substrates Journal of Applied Physics ·Annelies Delabie, Riikka L. Puurunen, Bert Brijs, Matty Caymax, Thierry Conard, Bart Onsia, Olivier Richard, Wilfried Vandervorst, Chao Zhao, Marc Heyns, Marc Meuris, M. Viitanen, Hidde H. Brongersma, M. de Ridder, Lyudmila V. Goncharova, Eric Garfunkel, Torgny Gustafsson, Wilman Tsai	2005	83
9	Epitaxial NiMnSb films on GaAs(001) Applied Physics Letters ·W. Van Roy, (unknown), Bert Brijs, G. Borghs	2000	77
10	Shallow Junction Ion Implantation in Ge and Associated Defect Control Journal of The Electrochemical Society ·A. Satta, Eddy Simoen, Tom Janssens, Trudo Clarysse, Brice De Jaeger, A. Benedetti, I. Hoflijk, Bert Brijs, Marc Meuris, Wilfried Vandervorst	2006	62
11	Atomic Layer Deposition of Strontium Titanate Films Using Sr([sup t]Bu[sub 3]Cp)[sub 2] and Ti(OMe)[sub 4] Journal of The Electrochemical Society ·M. Popovici, Sven Van Elshocht, N. Menou, Johan Swerts, Dieter Pierreux, Annelies Delabie, Bert Brijs, Thierry Conard, Karl Opsomer, Jan Willem Maes, Dirk J. Wouters, J. A. Kittl	2009	55
12	Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon Applied Physics Letters ·B. J. Pawlak, T. Janssens, Bert Brijs, W. Vandervorst, E. J. H. Collart, Susan B. Felch, N. E. B. Cowern	2006	47
13	Scaling to Sub-1 nm Equivalent Oxide Thickness with Hafnium Oxide Deposited by Atomic Layer Deposition Journal of The Electrochemical Society ·Annelies Delabie, Matty Caymax, Bert Brijs, D.P. Brunco, Thierry Conard, Erik Sleeckx, Sven Van Elshocht, Lars‐Åke Ragnarsson, Stefan De Gendt, Marc Heyns	2006	42
14	Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films Applied Physics Letters ·Riikka L. Puurunen, Annelies Delabie, Sven Van Elshocht, Matty Caymax, Martin L. Green, Bert Brijs, Olivier Richard, H. Bender, Thierry Conard, I. Hoflijk, Wilfried Vandervorst, David Hellin, Danielle Vanhaeren, Chao Zhao, Stefan De Gendt, Marc Heyns	2005	41
15	Low-energy heavy-ion TOF-ERDA setup for quantitative depth profiling of thin films Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Simone Giangrandi, Timo Sajavaara, Bert Brijs, Kai Arstila, A. Vantomme, W. Vandervorst	2008	37
16	Influence of Ti on CoSi2 nucleation Applied Physics Letters ·Christophe Detavernier, R.L. Van Meirhaeghe, F. Cardon, K. Maex, Wilfried Vandervorst, Bert Brijs	2000	36
17	Factors affecting an efficient sealing of porous low-k dielectrics by physical vapor deposition Ta(N) thin films Journal of Applied Physics ·Francesca Iacopi, Zs. Tôkei, Quoc Toan Le, Denis Shamiryan, Thierry Conard, Bert Brijs, U. Kreißig, M. Van Hove, Karen Maex	2002	35
18	Errors in near-surface and interfacial profiling of boron and arsenic Applied Surface Science ·W. Vandervorst, Tom Janssens, Bert Brijs, Thierry Conard, Cedric Huyghebaert, Jens Frühauf, A. Bergmaier, G. Dollinger, Temel Büyüklimanli, (unknown), Kenji Kimura	2004	35
19	Very low chemical disorder in epitaxial NiMnSb films on GaAs(111)B Applied Physics Letters ·W. Van Roy, M. Wójcik, E. Jędryka, S. Nadolski, D. Jalabert, Bert Brijs, G. Borghs, (unknown)	2003	32
20	N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C Applied Surface Science ·P. Meunier-Beillard, Matty Caymax, Kris Van Nieuwenhuysen, Geert Doumen, Bert Brijs, M Hopstaken, Luc Geenen, Wilfried Vandervorst	2003	30

About Bert Brijs

Bert Brijs is a scholar working on Electrical and Electronic Engineering, Computational Mechanics, Atomic and Molecular Physics, and Optics, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 118 papers that have together received 2.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (71 papers), Integrated Circuits and Semiconductor Failure Analysis (35 papers), Ion-surface interactions and analysis (32 papers), Semiconductor materials and interfaces (24 papers), Silicon and Solar Cell Technologies (22 papers), Copper Interconnects and Reliability (19 papers), Electronic and Structural Properties of Oxides (17 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.0k citations), Electronic, Optical and Magnetic Materials (433 citations), Materials Chemistry (986 citations), Atomic and Molecular Physics, and Optics (650 citations) and Computational Mechanics (268 citations). Bert Brijs has collaborated with scholars based in Belgium, United States and Germany. Frequent co-authors include Wilfried Vandervorst, Karen Maex, Thierry Conard, Matty Caymax, Olivier Richard, H. Bender, Annelies Delabie, M.-Y. Ho, G. D. Wilk and Sven Van Elshocht. Their work appears in journals such as Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Applied Physics Letters, Journal of The Electrochemical Society, Journal of Applied Physics and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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