P. Zeitzoff

2.3k citations

83 papers · 1.6k · h-index 19

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 82
- Semiconductor materials and devices 72
- Advancements in Semiconductor Devices and Circuit Design 65
- Integrated Circuits and Semiconductor Failure Analysis 35
- Ferroelectric and Negative Capacitance Devices 18
- Silicon and Solar Cell Technologies 12
- Silicon Carbide Semiconductor Technologies 9
Atomic and Molecular Physics, and Optics 12
- Semiconductor materials and interfaces 11

Co-authors: Ali Razavieh (3 shared papers)G. Bersuker (38 shared papers)Edward J. Nowak (1 shared paper)George Brown (25 shared papers)Chadwin D. Young (26 shared papers)Howard R. Huff (20 shared papers)M.R. Pinto (4 shared papers)V. Ramgopal Rao (2 shared papers)
Journals: IEEE Transactions on Electron Devices (5 papers)IEEE Electron Device Letters (5 papers)Materials Today (2 papers)Applied Physics Letters (2 papers)IEEE Circuits and Devices Magazine (2 papers)
Partner nations: United States Canada Germany

In The Last Decade

P. Zeitzoff

77 papers receiving 1.4k citations

Peers

Countries citing papers authored by P. Zeitzoff

Since Specialization

Citations

This map shows the geographic impact of P. Zeitzoff's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Zeitzoff with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Zeitzoff more than expected).

Fields of papers citing papers by P. Zeitzoff

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Zeitzoff. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Zeitzoff. The network helps show where P. Zeitzoff may publish in the future.

Co-authors

The 25 scholars most cited alongside P. Zeitzoff, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Zeitzoff Line = papers co-authored together P. Zeitzoff links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 83 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs IEEE Transactions on Electron Devices ·Baolei Cheng, Min Cao, V. Ramgopal Rao, A. Inani, Paul Vande Voorde, W. Greene, J.M.C. Stork, Zhiping Yu, P. Zeitzoff, J.C.S. Woo	1999	244
2	Challenges and Limitations of CMOS Scaling for FinFET and Beyond Architectures IEEE Transactions on Nanotechnology ·Ali Razavieh, P. Zeitzoff, Edward J. Nowak	2019	203
3	An improved electron and hole mobility model for general purpose device simulation IEEE Transactions on Electron Devices ·M. Darwish, J.L. Lentz, M.R. Pinto, P. Zeitzoff, T.J. Krutsick, Hong Ha Vuong	1997	134
4	Dielectrics for future transistors Materials Today ·G. Bersuker, P. Zeitzoff, George Brown, Howard R. Huff	2004	74
5	Interfacial Layer-Induced Mobility Degradation in High-kTransistors Japanese Journal of Applied Physics ·G. Bersuker, Joel Barnett, N. Moumen, Brendan Foran, Chadwin D. Young, Patrick Lysaght, Jeff J. Peterson, B. H. Lee, P. Zeitzoff, Howard R. Huff	2004	65
6	Highly Manufacturable Double-Gate FinFET With Gate-Source/Drain Underlap IEEE Transactions on Electron Devices ·Ji‐Woon Yang, P. Zeitzoff, Hsing‐Huang Tseng	2007	55
7	High-k gate stacks for planar, scaled CMOS integrated circuits Microelectronic Engineering ·Howard R. Huff, Tuo‐Hung Hou, C. Lim, Y. Kim, Joel Barnett, G. Bersuker, George Brown, Chadwin D. Young, P. Zeitzoff, J. Gutt, P. Lysaght, Mark I. Gardner, R.W. Murto	2003	51
8	Correcting effective mobility measurements for the presence of significant gate leakage current IEEE Electron Device Letters ·P. Zeitzoff, Chadwin D. Young, George Brown, Yudong Kim	2003	35
9	Mobility evaluation in transistors with charge-trapping gate dielectrics Applied Physics Letters ·G. Bersuker, P. Zeitzoff, J.H. Sim, B. H. Lee, Rino Choi, George Brown, Chadwin D. Young	2005	34
10	A perspective from the 2003 ITRS IEEE Circuits and Devices Magazine ·P. Zeitzoff, J.E. Chung	2005	34
11	Intrinsic mobility evaluation of high-/spl kappa/ gate dielectric transistors using pulsed I/sub d/-V/sub g/ IEEE Electron Device Letters ·Chadwin D. Young, P. Zeitzoff, George Brown, G. Bersuker, (unknown), John R. Hauser	2005	31
12	Highly Manufacturable 45nm LSTP CMOSFETs Using Novel Dual High-k and Dual Metal Gate CMOS Integration Sook‐Keun Song, Z.B. Zhang, M. Mahmood Hussain, C. Huffman, Joel Barnett, Sang-Kon Bae, Haotian Li, P. Majhi, C.S. Park, Bin Ju, H.K. Park, C.Y. Kang, Rino Choi, P. Zeitzoff, H.‐H. Tseng, B.H. Lee, R. Jammy	2006	31
13	Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance MRS Proceedings ·G. Bersuker, J.H. Sim, Chadwin D. Young, Rino Choi, B. H. Lee, Patrick Lysaght, George Brown, P. Zeitzoff, Mark Gardner, R.W. Murto, Howard R. Huff	2004	26
14	Influence of fluorine implant on boron diffusion: Determination of process modeling parameters Journal of Applied Physics ·H.-H. Vuong, H.-J. Gossmann, C.S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, R. Ahrens, T. Boone, P. Zeitzoff	1995	26
15	Modeling and Analysis of Parasitic Resistance in Double-Gate FinFETs IEEE Transactions on Electron Devices ·D. Tekleab, S. Samavedam, P. Zeitzoff	2009	26
16	Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PMOS devices IEEE Transactions on Electron Devices ·H.-H. Vuong, C.S. Rafferty, S. A. Eshraghi, J.L. Lentz, P. Zeitzoff, M.R. Pinto, S.J. Hillenius	1996	25
17	Subnanometer Scaling of HfO[sub 2]/Metal Electrode Gate Stacks Electrochemical and Solid-State Letters ·Jeff J. Peterson, Chadwin D. Young, Joel Barnett, Sundararaman Gopalan, Jim Gutt, Choong-Ho Lee, Hong-Jyh Li, Tuo‐Hung Hou, Yudong Kim, Chan Lim, Nirmal Chaudhary, N. Moumen, Byoung-Hun Lee, G. Bersuker, (unknown), P. Zeitzoff, Mark I. Gardner, R.W. Murto, Howard R. Huff	2004	23
18	Experimental Study of Etched Back Thermal Oxide for Optimization of the Si/High-k Interface MRS Proceedings ·Joel Barnett, N. Moumen, J. Gutt, Mark Gardner, C. Huffman, P. Majhi, Jeff J. Peterson, Sundararaman Gopalan, Brendan Foran, H.-J. Li, B.H. Lee, G. Bersuker, P. Zeitzoff, George Brown, P. Lysaght, Chadwin D. Young, R.W. Murto, Howard R. Huff	2004	22
19	MOSFET scaling trends and challenges through the end of the roadmap P. Zeitzoff	2004	19
20	Conventional poly-Si gate MOS-transistors with a novel, ultra-thin Hf-oxide layer Y. Kim, C. Lim, Chadwin D. Young, K. Matthews, Joel Barnett, Brendan Foran, Aditi Agarwal, George Brown, G. Bersuker, P. Zeitzoff, Mark Gardner, R.W. Murto, Lauren Larson, Craig Metzner, Shreyas S. Kher, Howard R. Huff	2004	18

About P. Zeitzoff

P. Zeitzoff is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 83 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (72 papers), Advancements in Semiconductor Devices and Circuit Design (65 papers), Integrated Circuits and Semiconductor Failure Analysis (35 papers), Ferroelectric and Negative Capacitance Devices (18 papers), Silicon and Solar Cell Technologies (12 papers), Semiconductor materials and interfaces (11 papers), Silicon Carbide Semiconductor Technologies (9 papers) and Copper Interconnects and Reliability (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.5k citations), Atomic and Molecular Physics, and Optics (168 citations), Materials Chemistry (237 citations), Hardware and Architecture (26 citations) and Biomedical Engineering (141 citations). P. Zeitzoff has collaborated with scholars based in United States, Canada and Germany. Frequent co-authors include Ali Razavieh, G. Bersuker, Edward J. Nowak, George Brown, Chadwin D. Young, Howard R. Huff, M.R. Pinto, V. Ramgopal Rao, A. Inani and Baolei Cheng. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Materials Today, Applied Physics Letters and IEEE Circuits and Devices Magazine.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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