Mark van Dal

455 citations

27 papers · 314 · h-index 10

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces
Structural Biology

Papers in

Electrical and Electronic Engineering 22
- Silicon and Solar Cell Technologies 16
- Semiconductor materials and devices 13
- Advancements in Semiconductor Devices and Circuit Design 4
- Ferroelectric and Negative Capacitance Devices 1
Atomic and Molecular Physics, and Optics 20
- Semiconductor materials and interfaces 19

Co-authors: Karen Maex (15 shared papers)J. A. Kittl (16 shared papers)O. Chamirian (12 shared papers)A. Lauwers (15 shared papers)Richard Lindsay (11 shared papers)A. Akheyar (7 shared papers)M. de Potter (5 shared papers)Olivier Richard (5 shared papers)
Journals: Microelectronic Engineering (4 papers)ACS Applied Electronic Materials (1 paper)Materials Science and Engineering B (1 paper)Journal of Crystal Growth (1 paper)Scientific Reports (1 paper)
Partner nations: Belgium United States Netherlands

In The Last Decade

Mark van Dal

25 papers receiving 291 citations

Peers

Countries citing papers authored by Mark van Dal

Since Specialization

Citations

This map shows the geographic impact of Mark van Dal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mark van Dal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mark van Dal more than expected).

Fields of papers citing papers by Mark van Dal

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mark van Dal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mark van Dal. The network helps show where Mark van Dal may publish in the future.

Co-authors

The 25 scholars most cited alongside Mark van Dal, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Mark van Dal Line = papers co-authored together Mark van Dal links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 27 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Ni- and Co-based silicides for advanced CMOS applications Microelectronic Engineering ·J. A. Kittl, A. Lauwers, O. Chamirian, Mark van Dal, A. Akheyar, M. de Potter, Richard Lindsay, Karen Maex	2003	103
2	Thickness scaling issues of Ni silicide Microelectronic Engineering ·O. Chamirian, J. A. Kittl, A. Lauwers, Olivier Richard, Mark van Dal, Karen Maex	2003	31
3	Stress simulations for optimal mobility group IV p- and nMOS FinFETs for the 14 nm node and beyond Geert Eneman, D.P. Brunco, Liesbeth Witters, Benjamin Vincent, Paola Favia, Andriy Hikavyy, A. De Keersgieter, Jérôme Mitard, Roger Loo, A. Veloso, Olivier Richard, H. Bender, S. H. Lee, Mark van Dal, Nafees Kabir, Wilfried Vandervorst, Matty Caymax, Naoto Horiguchi, Nadine Collaert, Aaron Thean	2012	29
4	Applications of Ni-based silicides to 45 nm CMOS and Beyond MRS Proceedings ·J. A. Kittl, A. Lauwers, O. Chamirian, Małgorzata Pawlak, Mark van Dal, A. Akheyar, Muriel de Potter, Anil Kottantharayil, Geoffrey Pourtois, Richard Lindsay, Karen Maex	2004	21
5	Low temperature spike anneal for Ni-silicide formation Microelectronic Engineering ·A. Lauwers, J. A. Kittl, Mark van Dal, O. Chamirian, Richard Lindsay, M. de Potter, C. Demeurisse, C. Vrancken, Karen Maex, Xavier Llimona i Pagès, K. van der Jeugd, Victor P. Kuznetsov, E.H.A. Granneman	2004	20
6	Silicides for 65 nm CMOS and Beyond MRS Proceedings ·J. A. Kittl, A. Lauwers, O. Chamirian, Mark van Dal, A. Akheyar, Olivier Richard, J. G. Lisoni, Muriel de Potter, Richard Lindsay, Karen Maex	2003	19
7	Engineering Strain and Texture in Ferroelectric Scandium-Doped Aluminium Nitride ACS Applied Electronic Materials ·S. R. C. McMitchell, A. Walke, Kaustuv Banerjee, S. Mertens, Xiaoyu Piao, Ming Mao, Kostantine Katcko, G. Vellianitis, Mark van Dal, Yu-Ming Lin, G. Van den bosch, Romain Delhougne, Gouri Sankar Kar	2023	17
8	Nanometer scale characterisation of CoSi2 and NiSi induced strain in Si by convergent beam electron diffraction Materials Science and Engineering B ·A. Benedetti, H. Bender, C. Torregiani, Mark van Dal, Karen Maex	2004	15
9	Reaction of Ni and Si0.8Ge0.2: phase formation and thermal stability Microelectronic Engineering ·O. Chamirian, A. Lauwers, J. A. Kittl, Mark van Dal, M. de Potter, Richard Lindsay, Karen Maex	2004	12
10	Growth of heterostructures on InAs for high mobility device applications Journal of Crystal Growth ·R. Contreras‐Guerrero, S. Wang, M. Edirisooriya, W. Priyantha, Juan Salvador Rojas-Ramírez, Krishna K. Bhuwalka, G. Doornbos, M. Holland, R. Oxland, G. Vellianitis, Mark van Dal, B. Duriez, M. Passlack, C.H. Diaz, Ravi Droopad	2013	10
11	Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration Scientific Reports ·M. Holland, Mark van Dal, B. Duriez, R. Oxland, G. Vellianitis, G. Doornbos, Aryan Afzalian, Ta-Kun Chen, Chih-Hua Hsieh, P. Ramvall, T. Vasen, Yee‐Chia Yeo, M. Passlack	2017	6
12	Ni Silicide Morphology On Small Features MRS Proceedings ·O. Chamirian, A. Lauwers, J. A. Kittl, Mark van Dal, Muriel de Potter, C. Vrancken, Richard Lindsay, Karen Maex	2004	5
13	Advanced PMOS Device Architecture for Highly-Doped Ultra-Shallow Junctions Japanese Journal of Applied Physics ·R. Surdeanu, B. J. Pawlak, Richard Lindsay, Mark van Dal, G. Doornbos, C. Dachs, Y.V. Ponomarev, Josine J. P. Loo, F.N. Cubaynes, K. Henson, Marcel A. Verheijen, M. Kaiser, Xavier Llimona i Pagès, P.A. Stolk, B. Taylor, M. Jurczak	2004	4
14	Demonstration of Ferroelectric FET Memory with Oxide Semiconductor Channel to Achieve Smallest Cell Area 0.009 μm ² and High Endurance for Non-Volatile High-Bandwidth Memory Applications Chun‐Chieh Lu, Yu‐Chuan Shih, Chih‐Yu Chang, Yu-Kai Chang, Yu‐Chien Chiu, Wenzhao Lu, Chih‐Hung Nien, (unknown), Ya-Yun Cheng, (unknown), Huai-Ying Huang, Pei-Jean Liao, Vincent Duen‐Huei Hou, G. Doornbos, G. Vellianitis, Mark van Dal, Jeff Wu, Yu-Ming Lin	2024	4
15	Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge National University of Singapore ·H.Y. Yu, J.D. Chen, M.F. Li, S.J. Lee, D. L. Kwong, Mark van Dal, J. A. Kittl, A. Lauwers, E. Augendre, S. Kubicek, Chao Zhao, H. Bender, Bert Brijs, Luc Geenen, Antonio De Benedetti, P. Absil, M. Jurczak, S. Biesemans	2006	3
16	Ni, Pt and Yb Based Fully Silicided (FUSI) Gates for Scaled CMOS Technologies ECS Transactions ·J. A. Kittl, A. Lauwers, Mark van Dal, Hongyu Yu, A. Veloso, Tom Hoffmann, Małgorzata Pawlak, C. Demeurisse, Stefan Kubicek, M. Niwa, C. Vrancken, Philip Absil, S. Biesemans	2006	2
17	Doping of Sub-50nm SOI Layers MRS Proceedings ·Bartek Pawlak, Ray Duffy, Mark van Dal, F. C. Voogt, R.G.R. Weemaes, F. Roozeboom, P. C. Zalm, Nick S. Bennett, N. E. B. Cowern	2008	2
18	Effects of Alloying on Properties of NiSi for CMOS Applications MRS Proceedings ·Mark van Dal, A. Akheyar, J. A. Kittl, O. Chamirian, Muriel De Pottera, C. Demeurisse, A. Lauwers, Karen Maex	2004	2
19	Ni-based silicides: material issues for advanced CMOS applications J. A. Kittl, A. Lauwers, O. Chamirian, Mark van Dal, A. Akheyar, Olivier Richard, J. G. Lisoni, Muriel de Potter, Richard Lindsay, Karen Maex	2003	2
20	Experimental studies of dose retention and activation in FinFet-based structures Jay Mody, Ray Duffy, Pierre Eyben, Jozefien Goossens, Alain Moussa, W. Polspoel, Bart Berghmans, Mark van Dal, Bartek Pawlak, M. Kaiser, R.G.R. Weemaes, Wilfried Vandervorst	2009	2

About Mark van Dal

Mark van Dal is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Mechanical Engineering and Biomedical Engineering, having authored 27 papers that have together received 314 indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (19 papers), Silicon and Solar Cell Technologies (16 papers), Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers), Aluminum Alloys Composites Properties (2 papers), Silicon Nanostructures and Photoluminescence (2 papers), Advanced Surface Polishing Techniques (1 paper) and Ferroelectric and Negative Capacitance Devices (1 paper). The work is most often cited by research in Atomic and Molecular Physics, and Optics (219 citations), Structural Biology (8 citations), Electrical and Electronic Engineering (276 citations), Biomedical Engineering (65 citations) and Materials Chemistry (65 citations). Mark van Dal has collaborated with scholars based in Belgium, United States and Netherlands. Frequent co-authors include Karen Maex, J. A. Kittl, O. Chamirian, A. Lauwers, Richard Lindsay, A. Akheyar, M. de Potter, Olivier Richard, H. Bender and C. Torregiani. Their work appears in journals such as Microelectronic Engineering, ACS Applied Electronic Materials, Materials Science and Engineering B, Journal of Crystal Growth and Scientific Reports.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Mark van Dal

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Mark van Dal

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