N. E. B. Cowern

1.9k citations

75 papers · 1.5k · h-index 19

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces
Electrical and Electronic Engineering top 5%
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies

Papers in

Electrical and Electronic Engineering 72
- Silicon and Solar Cell Technologies 66
- Integrated Circuits and Semiconductor Failure Analysis 26
- Semiconductor materials and devices 25
- Advancements in Semiconductor Devices and Circuit Design 22
- Thin-Film Transistor Technologies 11
Atomic and Molecular Physics, and Optics 40
- Semiconductor materials and interfaces 36

Co-authors: F. Cristiano (12 shared papers)G. F. A. van de Walle (3 shared papers)A. Claverie (8 shared papers)P.A. Stolk (8 shared papers)H.G.A. Huizing (4 shared papers)K.T.F. Janssen (3 shared papers)Nick S. Bennett (21 shared papers)Giovanni Mannino (7 shared papers)
Journals: Applied Physics Letters (17 papers)Materials Science and Engineering B (7 papers)Journal of Applied Physics (4 papers)Physical Review Letters (3 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (3 papers)
Partner nations: United Kingdom Netherlands Belgium

In The Last Decade

N. E. B. Cowern

73 papers receiving 1.5k citations

Peers

Countries citing papers authored by N. E. B. Cowern

Since Specialization

Citations

This map shows the geographic impact of N. E. B. Cowern's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. E. B. Cowern with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. E. B. Cowern more than expected).

Fields of papers citing papers by N. E. B. Cowern

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. E. B. Cowern. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. E. B. Cowern. The network helps show where N. E. B. Cowern may publish in the future.

Co-authors

The 25 scholars most cited alongside N. E. B. Cowern, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with N. E. B. Cowern Line = papers co-authored together N. E. B. Cowern links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 75 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Energetics of Self-Interstitial Clusters in Si Physical Review Letters ·N. E. B. Cowern, Giovanni Mannino, P.A. Stolk, F. Roozeboom, H.G.A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, M. Jaraı́z	1999	262
2	Impurity diffusion via an intermediate species: The B-Si system Physical Review Letters ·N. E. B. Cowern, K.T.F. Janssen, G. F. A. van de Walle, D. J. Gravesteijn	1990	132
3	Diffusion of boron in germanium at 800–900°C Journal of Applied Physics ·Suresh Uppal, A. F. W. Willoughby, J. M. Bonar, N. E. B. Cowern, T. J. Grasby, R. J. H. Morris, Mark Dowsett	2004	105
4	Diffusion of ion-implanted boron in germanium Journal of Applied Physics ·Suresh Uppal, A. F. W. Willoughby, J. M. Bonar, A G R Evans, N. E. B. Cowern, R. J. H. Morris, Mark Dowsett	2001	91
5	Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions Applied Physics Letters ·Bartek Pawlak, R. Surdeanu, B. Colombeau, A. J. Smith, N. E. B. Cowern, Richard Lindsay, W. Vandervorst, Bert Brijs, Olivier Richard, F. Cristiano	2004	86
6	Formation energies and relative stability of perfect and faulted dislocation loops in silicon Journal of Applied Physics ·F. Cristiano, J. Grisolia, B. Colombeau, M. Omri, B. de Mauduit, A. Claverie, L.F. Giles, N. E. B. Cowern	2000	79
7	Mechanisms of implant damage annealing and transient enhanced diffusion in Si Applied Physics Letters ·N. E. B. Cowern, G. F. A. van de Walle, P. C. Zalm, D. W. E. Vandenhoudt	1994	73
8	Mechanisms of B deactivation control by F co-implantation Applied Physics Letters ·N. E. B. Cowern, B. Colombeau, J. D. Benson, Andrew J. Smith, W. Lerch, S. Paul, T. Graf, F. Cristiano, X. Hebras, D. Bolze	2005	55
9	Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon Applied Physics Letters ·B. J. Pawlak, T. Janssens, Bert Brijs, W. Vandervorst, E. J. H. Collart, Susan B. Felch, N. E. B. Cowern	2006	46
10	Suppression of phosphorus diffusion by carbon co-implantation Applied Physics Letters ·B. J. Pawlak, Ray Duffy, T. Janssens, W. Vandervorst, Susan B. Felch, E. J. H. Collart, N. E. B. Cowern	2006	45
11	Review of electrical characterization of ultra-shallow junctions with micro four-point probes Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Dirch Hjorth Petersen, Ole Hansen, Torben M. Hansen, Peter Bøggild, Rong Lin, Daniel Kjær, Peter F. Nielsen, Trudo Clarysse, Wilfried Vandervorst, Erik Rosseel, Nick S. Bennett, N. E. B. Cowern	2010	40
12	Ultrafast interstitial injection during transient enhanced diffusion of boron in silicon Applied Physics Letters ·H.G.A. Huizing, C.C.G. Visser, N. E. B. Cowern, P.A. Stolk, R.C.M. de Kruif	1996	34
13	Stress effects on impurity solubility in crystalline materials: A general model and density-functional calculations for dopants in silicon Physical Review B ·Chihak Ahn, Nick S. Bennett, Scott T. Dunham, N. E. B. Cowern	2009	29
14	On the analysis of the activation mechanisms of sub-melt laser anneals Materials Science and Engineering B ·Trudo Clarysse, Janusz Bogdanowicz, Jozefien Goossens, Alain Moussa, Erik Rosseel, Wilfried Vandervorst, Dirch Hjorth Petersen, Rong Lin, Peter F. Nielsen, Ole Hansen, Gregory T. Merklin, Nick S. Bennett, N. E. B. Cowern	2008	24
15	Is there an effect of the proximity of a “free-surface” on the formation of End-Of-Range defects? Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·M. Omri, Caroline Bonafos, A. Claverie, A. Nejim, F. Cristiano, Daniel Alquier, A. Martínez, N. E. B. Cowern	1996	24
16	Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic? Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Nick S. Bennett, Andrew J. Smith, R. Gwilliam, R.P. Webb, B.J. Sealy, N. E. B. Cowern, L. O’Reilly, P.J. McNally	2008	21
17	Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon Applied Physics Letters ·Giovanni Mannino, P.A. Stolk, N. E. B. Cowern, W.B. de Boer, A.G. Dirks, F. Roozeboom, J. G. M. van Berkum, P.H. Woerlee, Nguyen Ngoc Toan	2001	19
18	Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·J. J. Hamilton, E. J. H. Collart, B. Colombeau, C. Jeynes, M. Bersani, D. Giubertoni, J. A. Sharp, N. E. B. Cowern, K.J. Kirkby	2005	19
19	Vacancy-engineering implants for high boron activation in silicon on insulator Applied Physics Letters ·Andrew J. Smith, N. E. B. Cowern, R. Gwilliam, B.J. Sealy, B. Colombeau, E. J. H. Collart, S. Gennaro, D. Giubertoni, M. Bersani, Mario Barozzi	2006	18
20	Time scales of transient enhanced diffusion: free and clustered interstitials Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·N. E. B. Cowern, H.G.A. Huizing, P.A. Stolk, C.C.G. Visser, R.C.M. de Kruif, K. Kyllesbech Larsen, V. Privitera, Lis K. Nanver, W. Crans	1996	18

About N. E. B. Cowern

N. E. B. Cowern is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Computational Mechanics, Materials Chemistry and Atmospheric Science, having authored 75 papers that have together received 1.5k indexed citations. Recurring topics across this work include Silicon and Solar Cell Technologies (66 papers), Semiconductor materials and interfaces (36 papers), Integrated Circuits and Semiconductor Failure Analysis (26 papers), Semiconductor materials and devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers), Thin-Film Transistor Technologies (11 papers), Ion-surface interactions and analysis (10 papers) and Silicon Nanostructures and Photoluminescence (7 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (813 citations), Electrical and Electronic Engineering (1.4k citations), Computational Mechanics (301 citations), Materials Chemistry (331 citations) and Biomedical Engineering (117 citations). N. E. B. Cowern has collaborated with scholars based in United Kingdom, Netherlands and Belgium. Frequent co-authors include F. Cristiano, G. F. A. van de Walle, A. Claverie, P.A. Stolk, H.G.A. Huizing, K.T.F. Janssen, Nick S. Bennett, Giovanni Mannino, J. G. M. van Berkum and F. Roozeboom. Their work appears in journals such as Applied Physics Letters, Materials Science and Engineering B, Journal of Applied Physics, Physical Review Letters and Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

N. E. B. Cowern

Impact in

Papers in i

In The Last Decade

N. E. B. Cowern

Peers

Countries citing papers authored by N. E. B. Cowern

Fields of papers citing papers by N. E. B. Cowern

All Works

About N. E. B. Cowern

Explore authors with similar magnitude of impact

Papers in