A. Walke

920 citations

32 papers · 616 · h-index 16

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
Materials Chemistry
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials

Papers in

Electrical and Electronic Engineering 31
- Semiconductor materials and devices 21
- Ferroelectric and Negative Capacitance Devices 15
- Advancements in Semiconductor Devices and Circuit Design 13
- Advanced Memory and Neural Computing 7
- Silicon Carbide Semiconductor Technologies 3
Materials Chemistry 8
- MXene and MAX Phase Materials 4
- Ferroelectric and Piezoelectric Materials 4

Co-authors: Nadine Collaert (13 shared papers)A. Vandooren (10 shared papers)Anne S. Verhulst (7 shared papers)Aaron Thean (6 shared papers)R. Rooyackers (5 shared papers)G. Groeseneken (4 shared papers)Jan Van Houdt (13 shared papers)M. Popovici (11 shared papers)
Journals: IEEE Transactions on Electron Devices (13 papers)IEEE Electron Device Letters (2 papers)ACS Applied Electronic Materials (2 papers)Journal of Crystal Growth (1 paper)physica status solidi (RRL) - Rapid Research Letters (1 paper)
Partner nations: Belgium India United States

In The Last Decade

A. Walke

29 papers receiving 601 citations

Peers

Countries citing papers authored by A. Walke

Since Specialization

Citations

This map shows the geographic impact of A. Walke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Walke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Walke more than expected).

Fields of papers citing papers by A. Walke

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Walke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Walke. The network helps show where A. Walke may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Walke, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Walke Line = papers co-authored together A. Walke links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 32 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Fabrication and Analysis of a ${\rm Si}/{\rm Si}_{0.55}{\rm Ge}_{0.45}$ Heterojunction Line Tunnel FET IEEE Transactions on Electron Devices ·A. Walke, A. Vandooren, R. Rooyackers, Daniele Leonelli, Andriy Hikavyy, Roger Loo, Anne S. Verhulst, Kuo-Hsing Kao, Cedric Huyghebaert, G. Groeseneken, Valipe Ramgopal Rao, Krishna K. Bhuwalka, Marc Heyns, Nadine Collaert, Aaron Thean	2014	120
2	Part I: Impact of Field-Induced Quantum Confinement on the Subthreshold Swing Behavior of Line TFETs IEEE Transactions on Electron Devices ·A. Walke, Anne S. Verhulst, A. Vandooren, Devin Verreck, Eddy Simoen, Valipe Ramgopal Rao, G. Groeseneken, Nadine Collaert, Aaron Thean	2013	56
3	A new complementary hetero-junction vertical Tunnel-FET integration scheme R. Rooyackers, A. Vandooren, Anne S. Verhulst, A. Walke, K. Devriendt, S. Locorotondo, M. Demand, George Bryce, Roger Loo, Andriy Hikavyy, T. Vandeweyer, Cedric Huyghebaert, Nadine Collaert, Aaron Thean	2013	48
4	Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Metal–Ferroelectric–Metal Capacitors IEEE Transactions on Electron Devices ·A. Walke, M. Popovici, Kaustuv Banerjee, Sergiu Clima, Pankaj Kumbhare, J. Desmet, Johan Meersschaut, G. Van den bosch, Romain Delhougne, Gouri Sankar Kar, Jan Van Houdt	2022	36
5	The impact of sequential-3D integration on semiconductor scaling roadmap VUBIR (Vrije Universiteit Brussel) ·A. Mallik, A. Vandooren, Liesbeth Witters, A. Walke, J. Franco, Yasser Sherazi, Pieter Weckx, Dmitry Yakimets, M. Garcia Bardon, Bertrand Parvais, Peter Debacker, Bon Woong Ku, Sung Kyu Lim, A. Mocuta, D. Mocuta, Julien Ryckaert, Nadine Collaert, Prasanth Raghavan	2017	35
6	Ge-Source Vertical Tunnel FETs Using a Novel Replacement-Source Integration Scheme IEEE Transactions on Electron Devices ·R. Rooyackers, A. Vandooren, Anne S. Verhulst, A. Walke, Eddy Simoen, K. Devriendt, S. Locorotondo, M. Demand, George Bryce, Roger Loo, Andriy Hikavyy, T. Vandeweyer, Cedric Huyghebaert, Nadine Collaert, Aaron Thean	2014	35
7	High performance La-doped HZO based ferroelectric capacitors by interfacial engineering 2022 International Electron Devices Meeting (IEDM) ·M. Popovici, Jasper Bizindavyi, Paola Favia, Sergiu Clima, Md Nur K. Alam, R.K. Ramachandran, A. Walke, Umberto Celano, A. Leonhardt, S. Mukherjee, Olivier Richard, A. Illiberi, Michael Givens, Romain Delhougne, Jan Van Houdt, Gouri Sankar Kar	2022	34
8	High-Endurance Ferroelectric (La, Y) and (La, Gd) Co-Doped Hafnium Zirconate Grown by Atomic Layer Deposition ACS Applied Electronic Materials ·M. Popovici, A. Walke, Jasper Bizindavyi, Johan Meersschaut, Kaustuv Banerjee, Goedele Potoms, Kostantine Katcko, G. Van den bosch, Romain Delhougne, Gouri Sankar Kar, Jan Van Houdt	2022	30
9	Investigation of the Subthreshold Swing in Vertical Tunnel-FETs Using ${\rm H}_{2}$ and ${\rm D}_{2}$ Anneals IEEE Transactions on Electron Devices ·A. Vandooren, A. Walke, Anne S. Verhulst, R. Rooyackers, Nadine Collaert, Aaron Thean	2014	22
10	Part II: Investigation of Subthreshold Swing in Line Tunnel FETs Using Bias Stress Measurements IEEE Transactions on Electron Devices ·A. Walke, A. Vandooren, B. Kaczer, Anne S. Verhulst, R. Rooyackers, Eddy Simoen, Marc Heyns, V. Ramgopal Rao, G. Groeseneken, Nadine Collaert, Aaron Thean	2013	22
11	La Doped HZO-Based 3D-Trench Metal-Ferroelectric-Metal Capacitors With High-Endurance (>10¹²) for FeRAM Applications IEEE Electron Device Letters ·A. Walke, M. Popovici, Shamin Houshmand Sharifi, Eyüp Can Demir, Harinarayanan Puliyalil, Jasper Bizindavyi, Farrukh Yasin, Sergiu Clima, A. Fantini, Attilio Belmonte, Gouri Sankar Kar, Jan Van Houdt	2024	19
12	First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering VUBIR (Vrije Universiteit Brussel) ·Abhitosh Vais, Liesbeth Witters, Y. Mols, A. Sibaja Hernandez, A. Walke, Hao Yu, Marina Baryshnikova, G. Mannaert, Veeresh Deshpande, Reynald Alcotte, Mark Ingels, Piet Wambacq, Bertrand Parvais, R. Langer, Bernardette Kunert, Niamh Waldron, Nadine Collaert	2019	18
13	Ferroelectric La‐Doped ZrO₂/Hf_xZr_1−xO₂ Bilayer Stacks with Enhanced Endurance physica status solidi (RRL) - Rapid Research Letters ·M. Popovici, A. Walke, Kaustuv Banerjee, N. Ronchi, Johan Meersschaut, Umberto Celano, S. R. C. McMitchell, Valentina Spampinato, Alexis Franquet, Paola Favia, Johan Swerts, G. Van den bosch, Jan Van Houdt	2021	18
14	Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P–V and I–V in HfO₂-Based Ferroelectric FET IEEE Transactions on Electron Devices ·Y. Higashi, N. Ronchi, B. Kaczer, Md Nur K. Alam, Barry O’Sullivan, Kaustuv Banerjee, S. R. C. McMitchell, L. Breuil, A. Walke, G. Van den bosch, D. Linten, Jan Van Houdt	2021	17
15	Engineering Strain and Texture in Ferroelectric Scandium-Doped Aluminium Nitride ACS Applied Electronic Materials ·S. R. C. McMitchell, A. Walke, Kaustuv Banerjee, S. Mertens, Xiaoyu Piao, Ming Mao, Kostantine Katcko, G. Vellianitis, Mark van Dal, Yu-Ming Lin, G. Van den bosch, Romain Delhougne, Gouri Sankar Kar	2023	16
16	Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors IEEE Transactions on Electron Devices ·Sumi Lee, N. Ronchi, Jasper Bizindavyi, M. Popovici, Kaustuv Banerjee, A. Walke, Romain Delhougne, Jan Van Houdt, Changhwan Shin	2023	16
17	Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering Lirias (KU Leuven) ·Zhuo Chen, N. Ronchi, A. Walke, Kaustuv Banerjee, M. Popovici, Kostantine Katcko, G. Van den bosch, M. Rosmeulen, Valeri Afanas’ev, Jan Van Houdt	2023	11
18	Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications VUBIR (Vrije Universiteit Brussel) ·V. Putcha, E. Bury, J. Franco, A. Walke, Simeng E. Zhao, Uthayasankaran Peralagu, Ming Zhao, A. Alian, B. Kaczer, Niamh Waldron, D. Linten, Bertrand Parvais, Nadine Collaert	2020	9
19	Improving the Electrical Performance of a Quantum Well FET With a Shell Doping Profile by Heterojunction Optimization IEEE Transactions on Electron Devices ·Malkundi Puttaveerappa Vijay Kumar, Chia-Ying Hu, A. Walke, Kuo-Hsing Kao, Tien‐Sheng Chao	2017	7
20	Semiconductor Technologies for next Generation Mobile Communications VUBIR (Vrije Universiteit Brussel) ·Nadine Collaert, A. Alian, S.-H. Chen, Veeresh Deshpande, Mark Ingels, V. Putcha, A. Sibaja-Hernandez, Barend van Liempd, Abhitosh Vais, A. Vandooren, A. Walke, Liesbeth Witters, Hongtao Yu, D. Linten, Bertrand Parvais, Piet Wambacq, Niamh Waldron	2018	7

About A. Walke

A. Walke is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Biomedical Engineering and Condensed Matter Physics, having authored 32 papers that have together received 616 indexed citations. Recurring topics across this work include Semiconductor materials and devices (21 papers), Ferroelectric and Negative Capacitance Devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Advanced Memory and Neural Computing (7 papers), Semiconductor Quantum Structures and Devices (4 papers), MXene and MAX Phase Materials (4 papers), Ferroelectric and Piezoelectric Materials (4 papers) and Silicon Carbide Semiconductor Technologies (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (598 citations), Materials Chemistry (148 citations), Biomedical Engineering (120 citations), Hardware and Architecture (16 citations) and Condensed Matter Physics (17 citations). A. Walke has collaborated with scholars based in Belgium, India and United States. Frequent co-authors include Nadine Collaert, A. Vandooren, Anne S. Verhulst, Aaron Thean, R. Rooyackers, G. Groeseneken, Jan Van Houdt, M. Popovici, Roger Loo and Andriy Hikavyy. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, ACS Applied Electronic Materials, Journal of Crystal Growth and physica status solidi (RRL) - Rapid Research Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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