E. Capogreco

551 citations

26 papers · 204 · h-index 11

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
Computer Networks and Communications
- Advanced Data Storage Technologies

Papers in

Electrical and Electronic Engineering 26
- Semiconductor materials and devices 24
- Advancements in Semiconductor Devices and Circuit Design 16
- Ferroelectric and Negative Capacitance Devices 6
- Integrated Circuits and Semiconductor Failure Analysis 5
- Thin-Film Transistor Technologies 4
- Advanced Memory and Neural Computing 3
Biomedical Engineering 4
- Nanowire Synthesis and Applications 4

Co-authors: A. Arreghini (9 shared papers)G. Van den bosch (9 shared papers)J. G. Lisoni (7 shared papers)Jan Van Houdt (8 shared papers)Andriy Hikavyy (8 shared papers)R. Degraeve (7 shared papers)Hiroaki Arimura (9 shared papers)M. Toledano-Luque (4 shared papers)
Journals: Japanese Journal of Applied Physics (3 papers)Semiconductor Science and Technology (1 paper)IEEE Transactions on Electron Devices (1 paper)ECS Transactions (1 paper)
Partner nations: Belgium United States South Korea

In The Last Decade

E. Capogreco

22 papers receiving 196 citations

Peers

Countries citing papers authored by E. Capogreco

Since Specialization

Citations

This map shows the geographic impact of E. Capogreco's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Capogreco with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Capogreco more than expected).

Fields of papers citing papers by E. Capogreco

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Capogreco. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Capogreco. The network helps show where E. Capogreco may publish in the future.

Co-authors

The 25 scholars most cited alongside E. Capogreco, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. Capogreco Line = papers co-authored together E. Capogreco links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 26 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Analysis of performance/variability trade-off in Macaroni-type 3-D NAND memory G. Congedo, A. Arreghini, Li Liu, E. Capogreco, J. G. Lisoni, K. Huet, I. Toqué‐Tresonne, Steven Van Aerde, M. Toledano-Luque, C.-L. Tan, G. Van den bosch, Jan Van Houdt	2014	19
2	Advantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFET Hiroaki Arimura, Geert Eneman, E. Capogreco, L. Witters, A. De Keersgieter, Paola Favia, Clément Porret, Andriy Hikavyy, Roger Loo, H. Bender, L.-Å. Ragnarsson, Jérôme Mitard, Nadine Collaert, D. Mocuta, Naoto Horiguchi	2018	16
3	Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND A. Subirats, A. Arreghini, E. Capogreco, Romain Delhougne, C.-L. Tan, Andriy Hikavyy, L. Breuil, R. Degraeve, V. Putcha, G. Van den bosch, D. Linten, A. Furnémont	2017	16
4	Laser thermal anneal of polysilicon channel to boost 3D memory performance J. G. Lisoni, A. Arreghini, G. Congedo, M. Toledano-Luque, I. Toqué‐Tresonne, Karim Huet, E. Capogreco, Li Liu, C.-L. Tan, R. Degraeve, G. Van den bosch, Jan Van Houdt	2014	16
5	Toward high-performance and reliable Ge channel devices for 2 nm node and beyond Hiroaki Arimura, E. Capogreco, Anurag Vohra, Clément Porret, Roger Loo, Erik Rosseel, Andriy Hikavyy, Daire Cott, G. Boccardi, Liesbeth Witters, Geert Eneman, Jérôme Mitard, Nadine Collaert, Naoto Horiguchi	2020	15
6	MOVPE In1−xGaxAs high mobility channel for 3-D NAND memory E. Capogreco, J. G. Lisoni, A. Arreghini, A. Subirats, Bernardette Kunert, Weiming Guo, T. Maurice, C.-L. Tan, R. Degraeve, K. De Meyer, G. Van den bosch, Jan Van Houdt	2015	13
7	A record Gm_SAT/SS_SAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation Hiroaki Arimura, Daire Cott, G. Boccardi, Roger Loo, Kurt Wostyn, S. Brus, E. Capogreco, A. Opdebeeck, Liesbeth Witters, Thierry Conard, Samuel Suhard, Dennis H. van Dorp, Karine Kenis, L.-Å. Ragnarsson, Jérôme Mitard, Frank Holsteyns, V. De Heyn, D. Mocuta, Nadine Collaert, Naoto Horiguchi	2019	12
8	Low temperature epitaxial growth of Ge:B and Ge _0.99 Sn _0.01 :B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment Japanese Journal of Applied Physics ·Anurag Vohra, Clément Porret, David Kohen, Steven Folkersma, Janusz Bogdanowicz, Marc Schaekers, John Tolle, Andriy Hikavyy, E. Capogreco, Liesbeth Witters, R. Langer, Wilfried Vandervorst, Roger Loo	2019	11
9	Integration and Electrical Evaluation of Epitaxially Grown Si and SiGe Channels for Vertical NAND Memory Applications E. Capogreco, R. Degraeve, J. G. Lisoni, Vu Luong, A. Arreghini, M. Toledano-Luque, Andriy Hikavyy, Toshinori Numata, K. De Meyer, G. Van den bosch, Jan Van Houdt	2015	11
10	Feasibility of In_{<italic>x</italic>}Ga_{1–<italic>x</italic>}As High Mobility Channel for 3-D NAND Memory IEEE Transactions on Electron Devices ·E. Capogreco, A. Subirats, J. G. Lisoni, A. Arreghini, Bernardette Kunert, Weiming Guo, C.-L. Tan, Romain Delhougne, G. Van den bosch, K. De Meyer, A. Furnémont, Jan Van Houdt	2016	11
11	Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model R. Degraeve, M. Toledano-Luque, A. Arreghini, Bao-Jun Tang, E. Capogreco, J. G. Lisoni, Ph. Roussel, B. Kaczer, G. Van den bosch, G. Groeseneken, Jan Van Houdt	2013	10
12	Ge oxide scavenging and gate stack nitridation for strained Si_0.7Ge_0.3 pFinFETs enabling 35% higher mobility than Si Hiroaki Arimura, Kurt Wostyn, L.-Å. Ragnarsson, E. Capogreco, Adrian Chasin, Thierry Conard, S. Brus, Paola Favia, J. Franco, Jérôme Mitard, S. Demuynck, Naoto Horiguchi	2019	9
13	TEM investigations of gate-all-around nanowire devices Semiconductor Science and Technology ·Paola Favia, Olivier Richard, Geert Eneman, Hans Mertens, Hiroaki Arimura, E. Capogreco, Andriy Hikavyy, Liesbeth Witters, Paromita Kundu, Roger Loo, E. Vancoille, H. Bender	2019	8
14	Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs Stanislav Tyaginov, Al-Moatasem El-Sayed, Alexander Makarov, Adrian Chasin, Hiroaki Arimura, Michiel Vandemaele, Markus Jech, E. Capogreco, Liesbeth Witters, Alexander Grill, A. De Keersgieter, Geert Eneman, D. Linten, B. Kaczer	2019	8
15	80 nm tall thermally stable cost effective FinFETs for advanced dynamic random access memory periphery devices for artificial intelligence/machine learning and automotive applications Japanese Journal of Applied Physics ·A. Spessot, R. Ritzenthaler, E. Dentoni Litta, Emmanuel Dupuy, Barry O’Sullivan, João P. A. Bastos, E. Capogreco, Kenichi Miyaguchi, Vladimir Machkaoutsan, Younggwang Yoon, P. Fazan, Naoto Horiguchi	2021	7
16	Addressing Key Challenges for SiGe-pFin Technologies: Fin Integrity, Low-DIT Si-Cap-Free Gate Stack and Optimizing the Channel Strain Hiroaki Arimura, E. Capogreco, Kurt Wostyn, Geert Eneman, L.-Å. Ragnarsson, S. Brus, S. Baudot, A. Peter, T. Schram, Paola Favia, Olivier Richard, H. Bender, Jérôme Mitard, Naoto Horiguchi	2020	5
17	Understanding the intrinsic reliability behavior of <tex>$\boldsymbol{n}$</tex> -/<tex>$\boldsymbol{p}$</tex>-Si and <tex>$\boldsymbol{p}$</tex>-Ge nanowire FETs utilizing degradation maps Adrian Chasin, E. Bury, J. Franco, B. Kaczer, Michiel Vandemaele, Hiroaki Arimura, E. Capogreco, Liesbeth Witters, R. Ritzenthaler, Hans Mertens, Naoto Horiguchi, Dimitri Linten	2018	5
18	Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery João P. A. Bastos, Barry O’Sullivan, J. Franco, Stanislav Tyaginov, B. Truijen, Adrian Chasin, R. Degraeve, Ben Kaczer, R. Ritzenthaler, E. Capogreco, E. Dentoni Litta, A. Spessot, Y. Higashi, Y. Yoon, Vladimir Machkaoutsan, P. Fazan, Naoto Horiguchi	2022	4
19	Direct three-dimensional observation of the conduction in poly-Si and In<inf>1−x</inf>Ga<inf>x</inf>As 3D NAND vertical channels Umberto Celano, E. Capogreco, J. G. Lisoni, A. Arreghini, B. Kunert, Weiming Guo, G. Van den bosch, Jan Van Houdt, K. De Meyer, A. Furnémont, Wilfried Vandervorst	2016	4
20	Thermally stable, packaged aware LV HKMG platforms benchmark to enable low power I/O for next 3D NAND generations A. Spessot, Shairfe Muhammad Salahuddin, Ricardo Fernández Escobar, R. Ritzenthaler, Yang Xiang, Rahul Budhwani, E. Dentoni Litta, E. Capogreco, João P. A. Bastos, Yangyin Chen, Naoto Horiguchi	2022	2

About E. Capogreco

E. Capogreco is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Computer Networks and Communications, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 26 papers that have together received 204 indexed citations. Recurring topics across this work include Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers), Ferroelectric and Negative Capacitance Devices (6 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Nanowire Synthesis and Applications (4 papers), Thin-Film Transistor Technologies (4 papers), Advanced Memory and Neural Computing (3 papers) and Advanced Data Storage Technologies (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (199 citations), Computer Networks and Communications (41 citations), Structural Biology (2 citations), Biomedical Engineering (30 citations) and Atomic and Molecular Physics, and Optics (20 citations). E. Capogreco has collaborated with scholars based in Belgium, United States and South Korea. Frequent co-authors include A. Arreghini, G. Van den bosch, J. G. Lisoni, Jan Van Houdt, Andriy Hikavyy, R. Degraeve, Hiroaki Arimura, M. Toledano-Luque, Naoto Horiguchi and Roger Loo. Their work appears in journals such as Japanese Journal of Applied Physics, Semiconductor Science and Technology, IEEE Transactions on Electron Devices and ECS Transactions.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

E. Capogreco

Impact in

Papers in i

In The Last Decade

E. Capogreco

Peers

Countries citing papers authored by E. Capogreco

Fields of papers citing papers by E. Capogreco

All Works

About E. Capogreco

Explore authors with similar magnitude of impact

Papers in