Ben Kaczer

1.2k citations
26 papers · 1.0k · 1 hit paper · h-index 11

Impact in

    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Integrated Circuits and Semiconductor Failure Analysis
    • Ferroelectric and Negative Capacitance Devices
    • Silicon Carbide Semiconductor Technologies
    • Advanced Memory and Neural Computing
    • Radiation Effects in Electronics
    • GaN-based semiconductor devices and materials

Papers in

    • Semiconductor materials and devices 23
    • Advancements in Semiconductor Devices and Circuit Design 16
    • Integrated Circuits and Semiconductor Failure Analysis 10
    • Ferroelectric and Negative Capacitance Devices 4
    • Advanced Memory and Neural Computing 3
    • Radiation Effects in Electronics 2
    • Electrostatic Discharge in Electronics 2

Ben Kaczer

25 papers receiving 990 citations

Ben Kaczer's Hit Papers

The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps 2011 · 402 citations
4020+5+10Years since publication100200300400

Peers

Ben Kaczer
Comparison fields: 5 of 36
  • Electrical and Electronic Engineering 996
  • Condensed Matter Physics 59
  • Hardware and Architecture 36
  • Materials Chemistry 111
  • Electronic, Optical and Magnetic Materials 39
Replace T. Nigam with:
T. Nigam United States
J.-L. Ogier France
M. Denais France
F. Monsieur France
M. Aoulaiche Belgium
G. Ribes France
V. Putcha Belgium
E.P. Vandamme Belgium
H. Takauchi Japan
Ben Kaczer relative to T. Nigam United States T. Nigam's profile →
Citations per field
00.5×1.5×2.5×
T. Nigam · 1×
Citations per year

Countries citing papers authored by Ben Kaczer

Since Specialization
Citations

This map shows the geographic impact of Ben Kaczer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ben Kaczer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ben Kaczer more than expected).

Fields of papers citing papers by Ben Kaczer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ben Kaczer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ben Kaczer. The network helps show where Ben Kaczer may publish in the future.

Co-authors

The 25 scholars most cited alongside Ben Kaczer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Ben Kaczer Line = papers co-authored together Ben Kaczer links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 26 papers — load more, or switch the sort, to bring in the rest.

#Work
1
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps
Hit paper breakdown →
2011402
2 1999159
3 2007151
4 201854
5 200851
6 200237
7 200734
8 200730
9 200619
10 200617
11 201110
12 20229
13 20148
14 20077
15 20086
16 20226
17 20095
18 20225
19 20224
20 20154

About Ben Kaczer

Ben Kaczer is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Computer Networks and Communications and Condensed Matter Physics, having authored 26 papers that have together received 1.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers), Integrated Circuits and Semiconductor Failure Analysis (10 papers), Ferroelectric and Negative Capacitance Devices (4 papers), Advanced Memory and Neural Computing (3 papers), Semiconductor materials and interfaces (2 papers), Radiation Effects in Electronics (2 papers) and Electrostatic Discharge in Electronics (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (996 citations), Condensed Matter Physics (59 citations), Hardware and Architecture (36 citations), Materials Chemistry (111 citations) and Electronic, Optical and Magnetic Materials (39 citations). Ben Kaczer has collaborated with scholars based in Belgium, Austria and United States. Frequent co-authors include Tibor Grasser, G. Groeseneken, R. Degraeve, Wolfgang Goes, J. Franco, Wolfgang Gös, Viktor Sverdlov, Philipp Hehenberger, P.-J. Wagner and María Toledano Luque. Their work appears in journals such as Microelectronics Reliability, IEEE Transactions on Electron Devices, IEEE Transactions on Nuclear Science, DSpace - NTUA (National Technical University of Athens) and Lirias (KU Leuven).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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