Hiroaki Arimura

1.3k citations

96 papers · 697 · h-index 16

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Advanced Memory and Neural Computing
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 94
- Semiconductor materials and devices 88
- Advancements in Semiconductor Devices and Circuit Design 71
- Integrated Circuits and Semiconductor Failure Analysis 35
- Ferroelectric and Negative Capacitance Devices 26
- Thin-Film Transistor Technologies 7
Atomic and Molecular Physics, and Optics 10
- Semiconductor materials and interfaces 9

Co-authors: Naoto Horiguchi (55 shared papers)Nadine Collaert (26 shared papers)Jérôme Mitard (31 shared papers)J. Franco (26 shared papers)B. Kaczer (23 shared papers)Heiji Watanabe (17 shared papers)Roger Loo (17 shared papers)Lars‐Åke Ragnarsson (17 shared papers)
Journals: IEEE Transactions on Electron Devices (12 papers)Japanese Journal of Applied Physics (5 papers)Applied Physics Letters (4 papers)ECS Journal of Solid State Science and Technology (4 papers)Microelectronic Engineering (2 papers)
Partner nations: Belgium Japan United States

In The Last Decade

Hiroaki Arimura

84 papers receiving 680 citations

Peers

Countries citing papers authored by Hiroaki Arimura

Since Specialization

Citations

This map shows the geographic impact of Hiroaki Arimura's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hiroaki Arimura with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hiroaki Arimura more than expected).

Fields of papers citing papers by Hiroaki Arimura

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hiroaki Arimura. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hiroaki Arimura. The network helps show where Hiroaki Arimura may publish in the future.

Co-authors

The 25 scholars most cited alongside Hiroaki Arimura, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Hiroaki Arimura Line = papers co-authored together Hiroaki Arimura links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 96 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities G. Groeseneken, J. Franco, M. Cho, B. Kaczer, M. Toledano-Luque, Ph. Roussel, T. Kauerauf, A. Alian, Jérôme Mitard, Hiroaki Arimura, Dennis Lin, Niamh Waldron, Sonja Sioncke, Liesbeth Witters, Hans Mertens, Lars‐Åke Ragnarsson, Marc Heyns, Nadine Collaert, Aaron Thean, An Steegen	2014	32
2	Processing Technologies for Advanced Ge Devices ECS Journal of Solid State Science and Technology ·Roger Loo, Andriy Hikavyy, Liesbeth Witters, Andreas Schulze, Hiroaki Arimura, Daire Cott, Jérôme Mitard, Clément Porret, Hans Mertens, Paul Ryan, J. Wall, Kevin Matney, Matthew Wormington, Paola Favia, Olivier Richard, H. Bender, Aaron Thean, Naoto Horiguchi, D. Mocuta, Nadine Collaert	2016	31
3	NBTI in Replacement Metal Gate SiGe core FinFETs: Impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure anneals J. Franco, B. Kaczer, Adrian Chasin, Hans Mertens, Lars‐Åke Ragnarsson, R. Ritzenthaler, Subhadeep Mukhopadhyay, Hiroaki Arimura, Ph. Roussel, E. Bury, Naoto Horiguchi, D. Linten, G. Groeseneken, Aaron Thean	2016	30
4	Ge nFET with high electron mobility and superior PBTI reliability enabled by monolayer-Si surface passivation and La-induced interface dipole formation Hiroaki Arimura, Sonja Sioncke, Daire Cott, Jérôme Mitard, Thierry Conard, Wendy Vanherle, Roger Loo, Paola Favia, H. Bender, Johan Meersschaut, Liesbeth Witters, Hans Mertens, J. Franco, Lars‐Åke Ragnarsson, Geoffrey Pourtois, Marc Heyns, A. Mocuta, Nadine Collaert, Aaron Thean	2015	28
5	Temperature-dependent La- and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy Applied Physics Letters ·Hiroaki Arimura, Richard Haight, S. Brown, A. J. Kellock, Alessandro Callegari, M. Copel, Heiji Watanabe, Vijay Narayanan, Takashi Ando	2010	22
6	Maximized Benefit of La–Al–O Higher-$k$ Gate Dielectrics by Optimizing the La/Al Atomic Ratio IEEE Electron Device Letters ·Hiroaki Arimura, S. Brown, Alessandro Callegari, A. J. Kellock, J. Bruley, M. Copel, Heiji Watanabe, Vijay Narayanan, Takashi Ando	2011	20
7	BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration J. Franco, Zhicheng Wu, G. Rzepa, A. Vandooren, Hiroaki Arimura, Lars‐Åke Ragnarsson, Geert Hellings, S. Brus, Daire Cott, V. De Heyn, G. Groeseneken, Naoto Horiguchi, Julien Ryckaert, Nadine Collaert, D. Linten, Tibor Grasser, B. Kaczer	2018	20
8	Excellent electrical properties of TiO2∕HfSiO∕SiO2 layered higher-k gate dielectrics with sub-1nm equivalent oxide thickness Applied Physics Letters ·Hiroaki Arimura, Naomu Kitano, Yuichi Naitou, Yudai Oku, T. Minami, Motomu Kosuda, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe	2008	17
9	Advantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFET Hiroaki Arimura, Geert Eneman, E. Capogreco, L. Witters, A. De Keersgieter, Paola Favia, Clément Porret, Andriy Hikavyy, Roger Loo, H. Bender, L.-Å. Ragnarsson, Jérôme Mitard, Nadine Collaert, D. Mocuta, Naoto Horiguchi	2018	17
10	Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects Motoyuki Sato, Naoto Umezawa, J. Shimokawa, Hiroaki Arimura, Seiichi Sugino, Akitomo Tachibana, Mitsutoshi Nakamura, Nobuyuki Mise, Satoshi Kamiyama, T. Morooka, T. Eimori, Kenji Shiraishi, Kikuo Yamabe, Heiji Watanabe, K. Yamada, Takuya Aoyama, Toshihide Nabatame, Yasuo Nara, Yuzuru Ohji	2008	17
11	Charge trapping properties in TiO2∕HfSiO∕SiO2 gate stacks probed by scanning capacitance microscopy Applied Physics Letters ·Yuichi Naitou, Hiroaki Arimura, Naomu Kitano, Shinya Horie, T. Minami, Motomu Kosuda, Hisato Ogiso, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe	2008	16
12	Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures ECS Journal of Solid State Science and Technology ·Roger Loo, Hiroaki Arimura, Daire Cott, Liesbeth Witters, Geoffrey Pourtois, Andreas Schulze, Bastien Douhard, Wendy Vanherle, Geert Eneman, Olivier Richard, Paola Favia, Jérôme Mitard, D. Mocuta, R. Langer, Nadine Collaert	2018	16
13	Toward high-performance and reliable Ge channel devices for 2 nm node and beyond Hiroaki Arimura, E. Capogreco, Anurag Vohra, Clément Porret, Roger Loo, Erik Rosseel, Andriy Hikavyy, Daire Cott, G. Boccardi, Liesbeth Witters, Geert Eneman, Jérôme Mitard, Nadine Collaert, Naoto Horiguchi	2020	16
14	Low-Frequency Noise Characterization of GeO<sub><italic>x</italic></sub> Passivated Germanium MOSFETs IEEE Transactions on Electron Devices ·(unknown), Eddy Simoen, Hiroaki Arimura, Jérôme Mitard, Sonja Sioncke, Hans Mertens, A. Mocuta, Nadine Collaert, Jun Luo, Chao Zhao, Aaron Thean, Cor Claeys	2015	16
15	Dipole-First Gate Stack as a Scalable and Thermal Budget Flexible Multi-Vt Solution for Nanosheet/CFET Devices 2021 IEEE International Electron Devices Meeting (IEDM) ·Hiroaki Arimura, Lars‐Åke Ragnarsson, Yusuke Oniki, J. Franco, A. Vandooren, S. Brus, A. Leonhardt, P. Sippola, T. Ivanova, Giuseppe Alessio Verni, RuoFei CHANG, Qiyuan Xie, Michael Givens, Jérôme Mitard, S. Biesemans, E. Dentoni Litta, Naoto Horiguchi	2021	16
16	Backside Power Delivery: Game Changer and Key Enabler of Advanced Logic Scaling and New STCO Opportunities A. Veloso, Bjorn Vermeersch, Rongmei Chen, P. Matagne, M. Garcia Bardon, Geert Eneman, K. Serbulova, Odysseas Zografos, S. H. Chen, Giuliano Sisto, A. Jourdain, Hiroaki Arimura, Barry O’Sullivan, A. De Keersgieter, Geert Hellings, Eric Beyne, Naoto Horiguchi, Julien Ryckaert	2023	15
17	First demonstration of 15nm-W<inf>FIN</inf> inversion-mode relaxed-Germanium n-FinFETs with Si-cap free RMG and NiSiGe Source/Drain Jérôme Mitard, L. Witters, Hiroaki Arimura, Y. Sasaki, Alexey Milenin, Roger Loo, Andriy Hikavyy, Geert Eneman, Pieter Lagrain, Hans Mertens, Sonja Sioncke, C. Vrancken, H. Bender, K. Barla, Naoto Horiguchi, A. Mocuta, Nadine Collaert, A. V-Y. Thean	2014	14
18	Performance and electrostatic improvement by high-pressure anneal on Si-passivated strained Ge pFinFET and gate all around devices with superior NBTI reliability Hiroaki Arimura, Liesbeth Witters, Daire Cott, Harold Dekkers, Roger Loo, Jérôme Mitard, Lars‐Åke Ragnarsson, Kurt Wostyn, G. Boccardi, E. Chiu, A. Subirats, Paola Favia, E. Vancoille, V. De Heyn, D. Mocuta, Nadine Collaert	2017	14
19	Low-frequency noise assessment of border traps in Al₂O₃ capped DRAM peripheral MOSFETs Semiconductor Science and Technology ·Eddy Simoen, Alejandro Federico, M. Aoulaiche, R. Ritzenthaler, T. Schram, Hiroaki Arimura, Mi-La Cho, T. Kauerauf, G. Groeseneken, Naoto Horiguchi, A. Thean, Felice Crupi, A. Spessot, C. Caillat, P. Fazan, H-J Na, Young Hoon Son, K. B. Noh	2014	13
20	(Invited) Stress Simulations of Fins, Wires, and Nanosheets ECS Transactions ·Geert Eneman, A. Veloso, Paola Favia, Andriy Hikavyy, Clément Porret, Hiroaki Arimura, A. De Keersgieter, Geoffrey Pourtois, Roger Loo, A. Spessot, Philippe Matagne, Julien Ryckaert, Naoto Horiguchi	2020	12

About Hiroaki Arimura

Hiroaki Arimura is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 96 papers that have together received 697 indexed citations. Recurring topics across this work include Semiconductor materials and devices (88 papers), Advancements in Semiconductor Devices and Circuit Design (71 papers), Integrated Circuits and Semiconductor Failure Analysis (35 papers), Ferroelectric and Negative Capacitance Devices (26 papers), Semiconductor materials and interfaces (9 papers), Nanowire Synthesis and Applications (7 papers), Thin-Film Transistor Technologies (7 papers) and Electronic and Structural Properties of Oxides (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (662 citations), Atomic and Molecular Physics, and Optics (84 citations), Biomedical Engineering (98 citations), Materials Chemistry (97 citations) and Structural Biology (3 citations). Hiroaki Arimura has collaborated with scholars based in Belgium, Japan and United States. Frequent co-authors include Naoto Horiguchi, Nadine Collaert, Jérôme Mitard, J. Franco, B. Kaczer, Heiji Watanabe, Roger Loo, Lars‐Åke Ragnarsson, Liesbeth Witters and Hans Mertens. Their work appears in journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics, Applied Physics Letters, ECS Journal of Solid State Science and Technology and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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