J. Kwo

6.3k citations

216 papers · 5.2k · h-index 37

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 165
- Semiconductor materials and devices 157
- Advancements in Semiconductor Devices and Circuit Design 52
Materials Chemistry 100
- Electronic and Structural Properties of Oxides 64
- ZnO doping and properties 22

Co-authors: M. Hong (105 shared papers)M. Hong (51 shared papers)T. D. Lin (30 shared papers)J. P. Mannáerts (23 shared papers)M. L. Huang (18 shared papers)Yen‐Chung Chang (13 shared papers)Mao Lin Huang (19 shared papers)Y. J. Lee (19 shared papers)
Journals: Applied Physics Letters (55 papers)Journal of Crystal Growth (27 papers)Microelectronic Engineering (14 papers)Journal of Applied Physics (14 papers)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (6 papers)
Partner nations: Taiwan United States Belgium

In The Last Decade

J. Kwo

212 papers receiving 5.1k citations

Peers

Countries citing papers authored by J. Kwo

Since Specialization

Citations

This map shows the geographic impact of J. Kwo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Kwo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Kwo more than expected).

Fields of papers citing papers by J. Kwo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Kwo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Kwo. The network helps show where J. Kwo may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Kwo, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Kwo Line = papers co-authored together J. Kwo links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 Applied Physics Letters ·M. L. Huang, Yen‐Chung Chang, Chih‐Ju Chang, Y. J. Lee, P. Chang, J. Kwo, Tai‐Bor Wu, M. Hong	2005	291
2	GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition Applied Physics Letters ·P. D. Ye, G. D. Wilk, Bingzheng Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H.‐J. Gossmann, J. P. Mannáerts, M. Hong, K.K. Ng, J. Bude	2003	261
3	Intrinsic Spin-Dependent Thermal Transport Physical Review Letters ·S. Y. Huang, W. G. Wang, Shang‐Fan Lee, J. Kwo, C. L. Chien	2011	215
4	Zinc-indium-oxide: A high conductivity transparent conducting oxide Applied Physics Letters ·Julia M. Phillips, R. J. Cava, G. A. Thomas, S. A. Carter, J. Kwo, Theo Siegrist, J. J. Krajewski, John Marshall, W. F. Peck, D. H. Rapkine	1995	183
5	Energy-band parameters of atomic-layer-deposition Al2O3∕InGaAs heterostructure Applied Physics Letters ·Mao Lin Huang, Yu‐Cheng Chang, Chia-Yuan Chang, T. D. Lin, J. Kwo, T. B. Wu, M. Hong	2006	165
6	Magnetic and Structural Properties of Single-Crystal Rare-Earth Gd-Y Superlattices Physical Review Letters ·J. Kwo, E. M. Gyorgy, D. B. McWhan, M. Hong, F. J. DiSalvo, C. Vettier, J. E. Bower	1985	157
7	Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition Applied Physics Letters ·P. D. Ye, G. D. Wilk, Bingzheng Yang, J. Kwo, H.‐J. Gossmann, M. Hong, K.K. Ng, J. Bude	2004	126
8	Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN Applied Physics Letters ·Yen‐Chung Chang, H. C. Chiu, Y. J. Lee, M. L. Huang, K. Y. Lee, M. Hong, Y.N. Chiu, J. Kwo, Y. H. Wang	2007	108
9	High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics Applied Physics Letters ·T. D. Lin, H. C. Chiu, Pei-Ching Chang, L. T. Tung, C. P. Chen, M. Hong, J. Kwo, Wilman Tsai, Y. C. Wang	2008	103
10	Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters Applied Physics Letters ·Y. C. Chang, Mao Lin Huang, K. Y. Lee, Y. J. Lee, T. D. Lin, M. Hong, J. Kwo, T. S. Lay, Chao-Sung Liao, K. Y. Cheng	2008	95
11	Structure and properties of epitaxial Ba0.5Sr0.5TiO3/SrRuO3/ZrO2 heterostructure on Si grown by off-axis sputtering Applied Physics Letters ·S. Hou, J. Kwo, R. K. Watts, Jay Cheng, D. K. Fork	1995	94
12	Growth of rare-earth single crystals by molecular beam epitaxy: The epitaxial relationship between hcp rare earth and bcc niobium Applied Physics Letters ·J. Kwo, M. Hong, S. Nakahara	1986	93
13	Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics Microelectronic Engineering ·Y. C. Chang, M. L. Huang, Yu‐Han Chang, Y.J. Lee, H. C. Chiu, J. Kwo, M. Hong	2011	83
14	Dipole-dipole interactions and two-dimensional magnetism Physical review. B, Condensed matter ·Y. Yafet, J. Kwo, E. M. Gyorgy	1986	81
15	Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states Applied Physics Letters ·M. Hong, Zheng‐Hong Lu, J. Kwo, A. R. Kortan, J. P. Mannáerts, J. J. Krajewski, K. C. Hsieh, L. J. Chou, K. Y. Cheng	2000	73
16	Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 films Applied Physics Letters ·J. Kwo, D. W. Murphy, M. Hong, R. L. Opila, J. P. Mannáerts, A. M. Sergent, R. L. Masaitis	1999	69
17	Superconducting tunneling into theA15Nb3Al thin films Physical review. B, Condensed matter ·J. Kwo, T. H. Geballe	1981	68
18	Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces Journal of Crystal Growth ·M. Hong, J. P. Mannáerts, J. E. Bower, J. Kwo, M. Passlack, Wu‐Yuin Hwang, Li-Wei Tu	1997	67
19	Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing Applied Physics Letters ·Yen‐Chung Chang, Clément Merckling, J. Penaud, Chun‐An Lu, Wenlei Wang, J. Dekoster, Marc Meuris, Matty Caymax, Marc Heyns, J. Kwo, M. Hong	2010	64
20	Magnetic x-ray–scattering study of interfacial magnetism in a Gd-Y superlattice Physical Review Letters ·C. Vettier, D. B. McWhan, E. M. Gyorgy, J. Kwo, Bruce Buntschuh, B. W. Batterman	1986	63

About J. Kwo

J. Kwo is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Condensed Matter Physics, having authored 216 papers that have together received 5.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (157 papers), Electronic and Structural Properties of Oxides (64 papers), Ga2O3 and related materials (58 papers), Advancements in Semiconductor Devices and Circuit Design (52 papers), Semiconductor materials and interfaces (32 papers), GaN-based semiconductor devices and materials (28 papers), ZnO doping and properties (22 papers) and Magnetic properties of thin films (21 papers). The work is most often cited by research in Condensed Matter Physics (1.3k citations), Electronic, Optical and Magnetic Materials (1.5k citations), Electrical and Electronic Engineering (3.7k citations), Atomic and Molecular Physics, and Optics (2.0k citations) and Materials Chemistry (2.3k citations). J. Kwo has collaborated with scholars based in Taiwan, United States and Belgium. Frequent co-authors include M. Hong, M. Hong, T. D. Lin, J. P. Mannáerts, M. L. Huang, Yen‐Chung Chang, Mao Lin Huang, Y. J. Lee, H. C. Chiu and P. Chang. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Microelectronic Engineering, Journal of Applied Physics and Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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