Edward Beam

4.8k citations

120 papers · 3.9k · 1 hit paper · h-index 29

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 51
- GaN-based semiconductor devices and materials 50
Electrical and Electronic Engineering 98
- Semiconductor materials and devices 31
- Radio Frequency Integrated Circuit Design 24
- Semiconductor Lasers and Optical Devices 23
- Photonic and Optical Devices 17
- Advancements in Semiconductor Devices and Circuit Design 14

Co-authors: Alan Seabaugh (23 shared papers)P. Saunier (17 shared papers)Yu Cao (22 shared papers)Jan P. A. van der Wagt (6 shared papers)Andy Xie (15 shared papers)Hin-Fai Chau (10 shared papers)W. Liu (9 shared papers)A. Ketterson (14 shared papers)
Journals: IEEE Electron Device Letters (22 papers)Applied Physics Letters (11 papers)IEEE Transactions on Electron Devices (9 papers)Journal of Crystal Growth (4 papers)Journal of Electronic Materials (3 papers)
Partner nations: United States United Kingdom Italy

In The Last Decade

Edward Beam

119 papers receiving 3.8k citations

Edward Beam's Hit Papers

align trajectories log scale

The 2018 GaN power electronics roadmap 2018 · 1.1k citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2018 Journal of Physics D Applied Physics

Peers

Countries citing papers authored by Edward Beam

Since Specialization

Citations

This map shows the geographic impact of Edward Beam's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Edward Beam with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Edward Beam more than expected).

Fields of papers citing papers by Edward Beam

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Edward Beam. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Edward Beam. The network helps show where Edward Beam may publish in the future.

Co-authors

The 25 scholars most cited alongside Edward Beam, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Edward Beam Line = papers co-authored together Edward Beam links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 120 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	The 2018 GaN power electronics roadmap Journal of Physics D Applied Physics ·Hiroshi Amano, Yannick Baines, Edward Beam, Matteo Borga, Thierry Bouchet, Paul Raymond Chalker, Matthew Charles, Kevin Jing Chen Hit paper breakdown →	2018	1091
2	A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter IEEE Journal of Solid-State Circuits ·Tom P. E. Broekaert, Bobby Brar, Jan P. A. van der Wagt, Alan Seabaugh, Frank Morris, THEODORE S. MOISE, Edward Beam, Gary Frazier	1998	175
3	TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs IEEE Electron Device Letters ·U. Chowdhury, Jose Luis Jimenez, C. Lee, Edward Beam, P. Saunier, T. Balistreri, Seong-Yong Park, Tae-Hun Lee	2008	138
4	Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling ACS Applied Materials & Interfaces ·Yan Zhou, J. Anaya, James W. Pomeroy, Huarui Sun, Xing Gu, Andy Xie, Edward Beam, Michael Becker	2017	134
5	MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$ IEEE Electron Device Letters ·Jia Guo, Guowang Li, Faiza Faria, Yu Cao, Ronghua Wang, Jai Kishan Verma, Xiang Gao, Shiping Guo	2012	122
6	ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance IEEE Electron Device Letters ·Andrew J. Green, J. Gillespie, Robert Fitch, Dennis E. Walker, Miles T. Lindquist, Antonio Crespo, Dan Brooks, Edward Beam	2019	114
7	Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$ IEEE Electron Device Letters ·Dong Seup Lee, Han Wang, Allen Hsu, M. Azize, Oleg A. Laboutin, Yu Cao, Edward Beam, A. Ketterson	2013	102
8	RTD/HFET low standby power SRAM gain cell IEEE Electron Device Letters ·Jan P. A. van der Wagt, Alan Seabaugh, Edward Beam	1998	100
9	Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz IEEE Electron Device Letters ·Michael L. Schuette, A. Ketterson, Bo Song, Edward Beam, Tso-Min Chou, Manyam Pilla, Hua-Quen Tserng, Xiang Gao	2013	97
10	High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination Applied Physics Letters ·Jingshan Wang, Lina Cao, Jinqiao Xie, Edward Beam, Robert F. McCarthy, Chris Youtsey, Patrick Fay	2018	84
11	3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination IEEE Electron Device Letters ·Ming Xiao, Yunwei Ma, Kai Cheng, Kai Liu, Andy Xie, Edward Beam, Yu Cao, Yuhao Zhang	2020	84
12	Physical degradation of GaN HEMT devices under high drain bias reliability testing Microelectronics Reliability ·S.Y. Park, Carlo Floresca, Uttiya Chowdhury, Jose Luis Jimenez, Cathy Lee, Edward Beam, P. Saunier, T. Balistreri	2009	81
13	RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band IEEE Electron Device Letters ·Andrew J. Green, Neil Moser, Nicholas Carl Miller, Kyle J. Liddy, Miles T. Lindquist, Michael Elliot, J. Gillespie, Robert Fitch	2020	72
14	Thermal properties and thermal instabilities of InP-based heterojunction bipolar transistors IEEE Transactions on Electron Devices ·W. Liu, Hin-Fai Chau, Edward Beam	1996	54
15	Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation IEEE Electron Device Letters ·Shahadat Hasan Sohel, Mohammad Wahidur Rahman, Andy Xie, Edward Beam, Yongjie Cui, Mark Kruzich, Hao Xue, Towhidur Razzak	2019	52
16	InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF Applications IEEE Transactions on Electron Devices ·P. Saunier, Michael L. Schuette, Tso-Min Chou, Hua-Quen Tserng, A. Ketterson, Edward Beam, Manyam Pilla, Xiang Gao	2013	51
17	The use of tertiarybutylphosphine and tertiarybutylarsine for the metalorganic molecular beam epitaxy of the In0.53Ga0.47As/InP and In0.48Ga0.52P/GaAs materials systems Journal of Crystal Growth ·Edward Beam, T. Henderson, Alan Seabaugh, J.Y. Yang	1992	48
18	Multi-Channel Monolithic-Cascode HEMT (MC2-HEMT): A New GaN Power Switch up to 10 kV The HKU Scholars Hub (University of Hong Kong) ·Ming Xiao, Yunwei Ma, Zhonghao Du, Vasantha Pathirana, Kai Cheng, Ai-Gen Xie, Edward Beam, Yu Cao	2021	47
19	Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN Applied Physics Letters ·Ming Xiao, Zhonghao Du, Jinqiao Xie, Edward Beam, Xiaodong Yan, Kai Cheng, Han Wang, Yuhao Zhang +1 other	2020	46
20	Phonon mode study of near-lattice-matched InxGa1−xAs using micro-Raman spectroscopy Applied Physics Letters ·Joseph P. Estrera, P. D. Stevens, Robert Glosser, Walter M. Duncan, Yung-Chung Kao, H. Y. Liu, Edward Beam	1992	44

About Edward Beam

Edward Beam is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 120 papers that have together received 3.9k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (52 papers), GaN-based semiconductor devices and materials (50 papers), Semiconductor materials and devices (31 papers), Radio Frequency Integrated Circuit Design (24 papers), Ga2O3 and related materials (23 papers), Semiconductor Lasers and Optical Devices (23 papers), Photonic and Optical Devices (17 papers) and Advancements in Semiconductor Devices and Circuit Design (14 papers). The work is most often cited by research in Condensed Matter Physics (2.5k citations), Electronic, Optical and Magnetic Materials (1.1k citations), Electrical and Electronic Engineering (2.8k citations), Atomic and Molecular Physics, and Optics (1.2k citations) and Materials Chemistry (880 citations). Edward Beam has collaborated with scholars based in United States, United Kingdom and Italy. Frequent co-authors include Alan Seabaugh, P. Saunier, Yu Cao, Jan P. A. van der Wagt, Andy Xie, Hin-Fai Chau, W. Liu, A. Ketterson, Cathy Lee and Michael L. Schuette. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Journal of Crystal Growth and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Edward Beam

Impact in

Papers in i

In The Last Decade

Edward Beam

Edward Beam's Hit Papers

Peers

Countries citing papers authored by Edward Beam

Fields of papers citing papers by Edward Beam

All Works

About Edward Beam

Explore authors with similar magnitude of impact

Papers in