Edward Beam

4.6k citations

117 papers · 2.6k · h-index 29

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies

Papers in

Electrical and Electronic Engineering 94
- Semiconductor materials and devices 31
- Radio Frequency Integrated Circuit Design 22
- Semiconductor Lasers and Optical Devices 22
- Photonic and Optical Devices 16
- Advancements in Semiconductor Devices and Circuit Design 14
Atomic and Molecular Physics, and Optics 58
- Semiconductor Quantum Structures and Devices 52

Co-authors: Alan Seabaugh (23 shared papers)Yu Cao (25 shared papers)P. Saunier (17 shared papers)J.P.A. van der Wagt (6 shared papers)Andy Xie (16 shared papers)W. Liu (9 shared papers)Hin-Fai Chau (9 shared papers)A. Ketterson (14 shared papers)
Journals: IEEE Electron Device Letters (22 papers)Applied Physics Letters (11 papers)IEEE Transactions on Electron Devices (9 papers)Journal of Crystal Growth (4 papers)Electronics Letters (3 papers)
Partner nations: United States United Kingdom Taiwan

In The Last Decade

Edward Beam

116 papers receiving 2.5k citations

Peers

Countries citing papers authored by Edward Beam

Since Specialization

Citations

This map shows the geographic impact of Edward Beam's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Edward Beam with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Edward Beam more than expected).

Fields of papers citing papers by Edward Beam

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Edward Beam. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Edward Beam. The network helps show where Edward Beam may publish in the future.

Co-authors

The 25 scholars most cited alongside Edward Beam, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Edward Beam Line = papers co-authored together Edward Beam links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 117 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter IEEE Journal of Solid-State Circuits ·T.P.E. Broekaert, B. Brar, J.P.A. van der Wagt, Alan Seabaugh, Frank Morris, T. S. Moise, Edward Beam, Gary Frazier	1998	173
2	TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs IEEE Electron Device Letters ·U. Chowdhury, J. L. Jiménez, C. Lee, Edward Beam, P. Saunier, T. Balistreri, Seong-Yong Park, Tae-Hun Lee, J. Wang, M.J. Kim, Jungwoo Joh, Jesús A. del Alamo	2008	132
3	Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling ACS Applied Materials & Interfaces ·Yan Zhou, J. Anaya, James W. Pomeroy, Huarui Sun, Xing Gu, Andy Xie, Edward Beam, Michael Becker, T.A. Grotjohn, Cathy Lee, Martin Kuball	2017	120
4	MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$ IEEE Electron Device Letters ·Jia Guo, Guowang Li, Faiza Faria, Yu Cao, Ronghua Wang, Jai Verma, Xiang Gao, Shiping Guo, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier, Mark A. Wistey, Debdeep Jena, Huili Xing	2012	114
5	ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance IEEE Electron Device Letters ·Andrew J. Green, J. Gillespie, Robert Fitch, Dennis E. Walker, Miles Lindquist, Antonio Crespo, Dan Brooks, Edward Beam, Andy Xie, V. Kumar, J. L. Jiménez, Cathy Lee, Yu Cao, Kelson D. Chabak, Gregg H. Jessen	2019	101
6	Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$ IEEE Electron Device Letters ·Dong Seup Lee, Han Wang, Allen Hsu, M. Azize, Oleg Laboutin, Yu Cao, J. W. Johnson, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier, Tomás Palacios	2013	98
7	RTD/HFET low standby power SRAM gain cell IEEE Electron Device Letters ·J.P.A. van der Wagt, Alan Seabaugh, Edward Beam	1998	95
8	Gate-recessed integrated E/D GaN HEMT technology with f_T/f_max >300 GHz IEEE Electron Device Letters ·Michael L. Schuette, A. Ketterson, Bo Song, Edward Beam, Tso-Min Chou, Manyam Pilla, Hua-Quen Tserng, Xiang Gao, Shiping Guo, Patrick Fay, Huili Grace Xing, P. Saunier	2013	92
9	High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination Applied Physics Letters ·Jingshan Wang, Lina Cao, Jinqiao Xie, Edward Beam, Robert McCarthy, C. Youtsey, Patrick Fay	2018	79
10	Physical degradation of GaN HEMT devices under high drain bias reliability testing Microelectronics Reliability ·S.Y. Park, Carlo Floresca, Uttiya Chowdhury, J. L. Jiménez, Cathy Lee, Edward Beam, P. Saunier, T. Balistreri, Moon J. Kim	2009	78
11	3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination IEEE Electron Device Letters ·Ming Xiao, Yunwei Ma, Kai Cheng, Kai Liu, Andy Xie, Edward Beam, Yu Cao, Yuhao Zhang	2020	77
12	RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band IEEE Electron Device Letters ·Andrew J. Green, Neil Moser, Nicholas C. Miller, Kyle J. Liddy, Miles Lindquist, Michael Elliot, J. Gillespie, Robert Fitch, Ryan Gilbert, Dennis E. Walker, Elizabeth Werner, Antonio Crespo, Edward Beam, Andy Xie, Cathy Lee, Yu Cao, Kelson D. Chabak	2020	59
13	Thermal properties and thermal instabilities of InP-based heterojunction bipolar transistors IEEE Transactions on Electron Devices ·W. Liu, Hin-Fai Chau, Edward Beam	1996	51
14	Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiN_x Passivation IEEE Electron Device Letters ·Shahadat H. Sohel, Mohammad Wahidur Rahman, Andy Xie, Edward Beam, Yongjie Cui, Mark Kruzich, Hao Xue, Towhidur Razzak, Sanyam Bajaj, Yu Cao, Wu Lu, Siddharth Rajan	2019	47
15	The use of tertiarybutylphosphine and tertiarybutylarsine for the metalorganic molecular beam epitaxy of the In0.53Ga0.47As/InP and In0.48Ga0.52P/GaAs materials systems Journal of Crystal Growth ·Edward Beam, T. Henderson, Alan Seabaugh, J.Y. Yang	1992	46
16	Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN Applied Physics Letters ·Ming Xiao, Zhonghao Du, Jinqiao Xie, Edward Beam, Xiaodong Yan, Kai Cheng, Han Wang, Yu Cao, Yuhao Zhang	2020	45
17	Phonon mode study of near-lattice-matched InxGa1−xAs using micro-Raman spectroscopy Applied Physics Letters ·Joseph P. Estrera, P. D. Stevens, R. Glosser, W. M. Duncan, Yung-Chung Kao, H. Y. Liu, Edward Beam	1992	44
18	InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF Applications IEEE Transactions on Electron Devices ·P. Saunier, Michael L. Schuette, Tso-Min Chou, Hua-Quen Tserng, A. Ketterson, Edward Beam, Manyam Pilla, Xiang Gao	2013	43
19	Multi-Channel Monolithic-Cascode HEMT (MC²-HEMT): A New GaN Power Switch up to 10 kV 2021 IEEE International Electron Devices Meeting (IEDM) ·Ming Xiao, Yunwei Ma, Zhonghao Du, V. Pathirana, Kai Cheng, Ai-Gen Xie, Edward Beam, Yu Cao, Florin Udrea, Hai Wang, Yuxin Zhang	2021	38
20	Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs IEEE Electron Device Letters ·Dong Seup Lee, Oleg Laboutin, Yu Cao, Wayne Johnson, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier, Tomás Palacios	2012	38

About Edward Beam

Edward Beam is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 117 papers that have together received 2.6k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (52 papers), GaN-based semiconductor devices and materials (50 papers), Semiconductor materials and devices (31 papers), Ga2O3 and related materials (22 papers), Radio Frequency Integrated Circuit Design (22 papers), Semiconductor Lasers and Optical Devices (22 papers), Photonic and Optical Devices (16 papers) and Advancements in Semiconductor Devices and Circuit Design (14 papers). The work is most often cited by research in Condensed Matter Physics (1.5k citations), Electrical and Electronic Engineering (2.0k citations), Electronic, Optical and Magnetic Materials (645 citations), Atomic and Molecular Physics, and Optics (980 citations) and Materials Chemistry (520 citations). Edward Beam has collaborated with scholars based in United States, United Kingdom and Taiwan. Frequent co-authors include Alan Seabaugh, Yu Cao, P. Saunier, J.P.A. van der Wagt, Andy Xie, W. Liu, Hin-Fai Chau, A. Ketterson, Cathy Lee and Michael L. Schuette. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, Journal of Crystal Growth and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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