T. Henderson

3.5k citations

115 papers · 2.9k · h-index 27

Impact in

Atomic and Molecular Physics, and Optics top 1%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
- Semiconductor materials and interfaces
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Semiconductor Detectors and Materials
- Semiconductor Lasers and Optical Devices

Papers in

Electrical and Electronic Engineering 96
- Semiconductor materials and devices 59
- Advancements in Semiconductor Devices and Circuit Design 38
- Radio Frequency Integrated Circuit Design 26
- Advanced Semiconductor Detectors and Materials 11
Atomic and Molecular Physics, and Optics 87
- Semiconductor Quantum Structures and Devices 80
- Semiconductor materials and interfaces 13
- Quantum and electron transport phenomena 13

Co-authors: H. Morkoç̌ (59 shared papers)John F. Klem (35 shared papers)W. T. Masselink (24 shared papers)R. Fischer (24 shared papers)W. Kopp (23 shared papers)H. Morkoç (11 shared papers)U. K. Reddy (7 shared papers)Naresh Chand (4 shared papers)
Journals: Applied Physics Letters (15 papers)IEEE Electron Device Letters (11 papers)Journal of Applied Physics (11 papers)IEEE Transactions on Electron Devices (9 papers)Electronics Letters (7 papers)
Partner nations: United States Taiwan Netherlands

In The Last Decade

T. Henderson

112 papers receiving 2.7k citations

Peers

Countries citing papers authored by T. Henderson

Since Specialization

Citations

This map shows the geographic impact of T. Henderson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Henderson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Henderson more than expected).

Fields of papers citing papers by T. Henderson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Henderson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Henderson. The network helps show where T. Henderson may publish in the future.

Co-authors

The 25 scholars most cited alongside T. Henderson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. Henderson Line = papers co-authored together T. Henderson links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 115 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Comprehensive analysis of Si-dopedAlxGa1−xAs(x=0 to 1): Theory and experiments Physical review. B, Condensed matter ·Naresh Chand, T. Henderson, John F. Klem, W. T. Masselink, Russ Fischer, Yia‐Chung Chang, H. Morkoç	1984	364
2	Optical investigation of highly strained InGaAs-GaAs multiple quantum wells Journal of Applied Physics ·G. Ji, Daming Huang, U. K. Reddy, T. Henderson, R. Houdré, H. Morkoç̌	1987	224
3	Time-resolved Raman scattering in GaAs quantum wells Physical Review Letters ·D. Y. Oberli, D. R. Wake, M. V. Klein, John F. Klem, T. Henderson, H. Morkoç̌	1987	184
4	Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy Journal of Applied Physics ·R. Fischer, W. T. Masselink, John F. Klem, T. Henderson, T. C. McGlinn, M. V. Klein, H. Morkoç̌, J.H. Mazur, J. Washburn	1985	169
5	Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor IEEE Electron Device Letters ·T. Henderson, M.I. Aksun, C. K. Peng, H. Morkoç̌, P.C. Chao, P.M. Smith, K.H.G. Duh, L. F. Lester	1986	99
6	On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures IEEE Transactions on Electron Devices ·R. Fischer, T. J. Drummond, John F. Klem, W. Kopp, T. Henderson, D. Perrachione, H. Morkoç̌	1984	91
7	Optical properties of GaAs on (100) Si using molecular beam epitaxy Applied Physics Letters ·W. T. Masselink, T. Henderson, John F. Klem, R. Fischer, P. J. Pearah, H. Morkoç̌, M. J. Hafich, P. D. Wang, G. Y. Robinson	1984	86
8	Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon Electronics Letters ·R. Fischer, T. Henderson, John F. Klem, W. T. Masselink, W. Kopp, H. Morkoç, C. W. Litton	1984	77
9	Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well Applied Physics Letters ·H. Morkoç̌, J. Chen, U. K. Reddy, T. Henderson, Serge Luryi	1986	70
10	Determination of the valence-band discontinuity between GaAs and (Al,Ga)As by the use of p+-GaAs-(Al,Ga)As-p−-GaAs capacitors Applied Physics Letters ·D. Arnold, A. Ketterson, T. Henderson, J. F. Klem, H. Morkoç̌	1984	64
11	Temperature dependences of current gains in GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors IEEE Transactions on Electron Devices ·W. Liu, Shou-Kong Fan, T. Henderson, D. Davito	1993	63
12	Picosecond imaging of photoexcited carriers in quantum wells: Anomalous lateral confinement at high densities Physical review. B, Condensed matter ·Leigh M. Smith, D. R. Wake, J. P. Wolfe, Dean H. Levi, M. V. Klein, John F. Klem, T. Henderson, H. Morkoç̌	1988	61
13	Electrical characterization of GaAs/AlGaAs semiconductor-insulator-semiconductor capacitors and application to the measurement of the GaAs/AlGaAs band-gap discontinuity Journal of Applied Physics ·D. Arnold, A. Ketterson, T. Henderson, J. F. Klem, H. Morkoç̌	1985	59
14	Phonon-wind-driven transport of photoexcited carriers in a semiconductor quantum well Physical review. B, Condensed matter ·Leigh M. Smith, J. S. Prestón, J. P. Wolfe, D. R. Wake, John F. Klem, T. Henderson, H. Morkoç̌	1989	52
15	The use of tertiarybutylphosphine and tertiarybutylarsine for the metalorganic molecular beam epitaxy of the In0.53Ga0.47As/InP and In0.48Ga0.52P/GaAs materials systems Journal of Crystal Growth ·Edward Beam, T. Henderson, Alan Seabaugh, J.Y. Yang	1992	48
16	Low-temperature optical absorption inAlxGa1−xAs grown by molecular-beam epitaxy Physical review. B, Condensed matter ·P. J. Pearah, W. T. Masselink, John F. Klem, T. Henderson, H. Morkoç̌, C. W. Litton, D. C. Reynolds	1985	47
17	Microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor IEEE Electron Device Letters ·W. Liu, Shou-Kong Fan, T. Henderson, D. Davito	1993	46
18	Monolithic integration of GaAs/AlGaAs modulation-doped field-effect transistors and N-metal-oxide-semiconductor silicon circuits Applied Physics Letters ·R. Fischer, T. Henderson, John F. Klem, W. Kopp, C. K. Peng, H. Morkoç̌, J. Detry, S. Blackstone	1985	41
19	Investigation of GaAs/(Al,Ga)As multiple quantum wells by photoreflectance Journal of Applied Physics ·U. K. Reddy, G. Ji, T. Henderson, H. Morkoç, J. N. Schulman	1987	38
20	Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular-beam epitaxy: Its effect on the device electrical characteristics Journal of Applied Physics ·Navin Chand, John F. Klem, T. Henderson, H. Morkoç̌	1986	38

About T. Henderson

T. Henderson is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry and Biomedical Engineering, having authored 115 papers that have together received 2.9k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (80 papers), Semiconductor materials and devices (59 papers), Advancements in Semiconductor Devices and Circuit Design (38 papers), Radio Frequency Integrated Circuit Design (26 papers), GaN-based semiconductor devices and materials (20 papers), Semiconductor materials and interfaces (13 papers), Quantum and electron transport phenomena (13 papers) and Advanced Semiconductor Detectors and Materials (11 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (2.4k citations), Electrical and Electronic Engineering (2.4k citations), Condensed Matter Physics (429 citations), Surfaces, Coatings and Films (64 citations) and Materials Chemistry (386 citations). T. Henderson has collaborated with scholars based in United States, Taiwan and Netherlands. Frequent co-authors include H. Morkoç̌, John F. Klem, W. T. Masselink, R. Fischer, W. Kopp, H. Morkoç, U. K. Reddy, Naresh Chand, Russ Fischer and G. Ji. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Journal of Applied Physics, IEEE Transactions on Electron Devices and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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