Alan Seabaugh

13.1k citations

201 papers · 10.4k · 4 hit papers · h-index 41

Impact in

Electrical and Electronic Engineering top 0.2%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
Materials Chemistry top 0.5%
- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials

Papers in

Electrical and Electronic Engineering 170
- Semiconductor materials and devices 97
- Advancements in Semiconductor Devices and Circuit Design 90
- Ferroelectric and Negative Capacitance Devices 24
Atomic and Molecular Physics, and Optics 79
- Semiconductor Quantum Structures and Devices 65
- Quantum and electron transport phenomena 29

Co-authors: Qin Zhang (14 shared papers)Gianluca Fiori (1 shared paper)Luigi Colombo (1 shared paper)S. Banerjee (1 shared paper)Francesco Bonaccorso (1 shared paper)Tomás Palacios (1 shared paper)Daniel Neumaier (1 shared paper)Giuseppe Iannaccone (1 shared paper)
Journals: Applied Physics Letters (24 papers)IEEE Electron Device Letters (17 papers)IEEE Transactions on Electron Devices (16 papers)Journal of Applied Physics (6 papers)Solid-State Electronics (4 papers)
Partner nations: United States South Korea Slovenia

In The Last Decade

Alan Seabaugh

197 papers receiving 10.1k citations

Alan Seabaugh's Hit Papers

align trajectories log scale

Electronics based on two-dimensional materials 2014 · 2.6k citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2014 Nature Nanotechnology
2014 IEEE Journal of the Electron Devices Society
2010 Proceedings of the IEEE
2006 IEEE Electron Device Letters

Peers

Countries citing papers authored by Alan Seabaugh

Since Specialization

Citations

This map shows the geographic impact of Alan Seabaugh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Alan Seabaugh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Alan Seabaugh more than expected).

Fields of papers citing papers by Alan Seabaugh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Alan Seabaugh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Alan Seabaugh. The network helps show where Alan Seabaugh may publish in the future.

Co-authors

The 25 scholars most cited alongside Alan Seabaugh, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Alan Seabaugh Line = papers co-authored together Alan Seabaugh links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 201 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Electronics based on two-dimensional materials Nature Nanotechnology ·Gianluca Fiori, Francesco Bonaccorso, Giuseppe Iannaccone, Tomás Palacios, Daniel Neumaier, Alan Seabaugh, S. Banerjee, Luigi Colombo Hit paper breakdown →	2014	2633
2	Low-Voltage Tunnel Transistors for Beyond CMOS Logic Proceedings of the IEEE ·Alan Seabaugh, Qin Zhang Hit paper breakdown →	2010	1273
3	Low-subthreshold-swing tunnel transistors IEEE Electron Device Letters ·Qin Zhang, Wei Zhao, Alan Seabaugh Hit paper breakdown →	2006	500
4	Tunnel Field-Effect Transistors: State-of-the-Art IEEE Journal of the Electron Devices Society ·Hao Lü, Alan Seabaugh Hit paper breakdown →	2014	493
5	Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide Nature Communications ·Huamin Li, Daeyeong Lee, Deshun Qu, Xiaochi Liu, Jungjin Ryu, Alan Seabaugh, Won Jong Yoo	2015	316
6	Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior Applied Physics Letters ·Wan Sik Hwang, Maja Remškar, Rusen Yan, Vladimir Protasenko, Kristof Tahy, Soo Doo Chae, Pei Zhao, Aniruddha Konar, Huili Grace Xing, Alan Seabaugh, Debdeep Jena	2012	245
7	Direct extraction of the electron tunneling effective mass in ultrathin SiO2 Applied Physics Letters ·B. Brar, G. D. Wilk, Alan Seabaugh	1996	236
8	Device and Architecture Outlook for Beyond CMOS Switches Proceedings of the IEEE ·Kerry Bernstein, Ralph K. Cavin, Wolfgang Porod, Alan Seabaugh, Jeff Welser	2010	233
9	Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy Applied Physics Letters ·Rusen Yan, Qin Zhang, Wei Li, Irene Calizo, Tian Shen, Curt A. Richter, Angela R. Hight-Walker, Xuelei Liang, Alan Seabaugh, Debdeep Jena, Huili Grace Xing, David J. Gundlach, Nhan V. Nguyen	2012	179
10	Exfoliated multilayer MoTe2 field-effect transistors Applied Physics Letters ·Sara Fathipour, Nan Ma, Wan Sik Hwang, Vladimir Protasenko, Suresh Vishwanath, Huili Grace Xing, H. Q. Xu, D. Jena, Joerg Appenzeller, Alan Seabaugh	2014	175
11	A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter IEEE Journal of Solid-State Circuits ·T.P.E. Broekaert, B. Brar, J.P.A. van der Wagt, Alan Seabaugh, Frank Morris, T. S. Moise, Edward Beam, Gary Frazier	1998	173
12	Graphene Nanoribbon Tunnel Transistors IEEE Electron Device Letters ·Qin Zhang, Tian Fang, Huili Grace Xing, Alan Seabaugh, Debdeep Jena	2008	170
13	AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V IEEE Electron Device Letters ·Rui Li, Yeqing Lu, Guangle Zhou, Qingmin Liu, Soo Doo Chae, T. Vasen, Wan Sik Hwang, Qin Zhang, Patrick Fay, Tom Kosel, Mark A. Wistey, Huili Grace Xing, Alan Seabaugh	2012	114
14	Reconfigurable Ion Gating of 2H-MoTe₂ Field-Effect Transistors Using Poly(ethylene oxide)-CsClO₄ Solid Polymer Electrolyte ACS Nano ·Huilong Xu, Sara Fathipour, Erich Kinder, Alan Seabaugh, Susan K. Fullerton‐Shirey	2015	112
15	Novel gate-recessed vertical InAs/GaSb TFETs with record high I<inf>ON</inf> of 180 μA/μm at V<inf>DS</inf> = 0.5 V Guangle Zhou, R. Li, T. Vasen, Meng Qi, Seung‐Hoon Chae, Yeqing Lu, Q. Zhang, Hongqiang Zhu, J. M. Kuo, T. Kosel, Mark A. Wistey, Patrick Fay, Alan Seabaugh, Huili Grace Xing	2012	102
16	Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned IEEE Electron Device Letters ·Yeqing Lu, Guangle Zhou, Rui Li, Qingmin Liu, Qin Zhang, T. Vasen, Soo Doo Chae, Thomas Kosel, Mark A. Wistey, Huili Grace Xing, Alan Seabaugh, Patrick Fay	2012	101
17	Switching Dynamics of Ferroelectric Zr-Doped HfO₂ IEEE Electron Device Letters ·Cristobal Alessandri, Pratyush Pandey, A. C. Abusleme Hoffman, Alan Seabaugh	2018	97
18	RTD/HFET low standby power SRAM gain cell IEEE Electron Device Letters ·J.P.A. van der Wagt, Alan Seabaugh, Edward Beam	1998	96
19	Realization of a three-terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor Applied Physics Letters ·Mark A. Reed, William R. Frensley, R. J. Matyi, John N. Randall, Alan Seabaugh	1989	89
20	Nine-state resonant tunneling diode memory IEEE Electron Device Letters ·Alan Seabaugh, Yung-Chung Kao, Huihua Yuan	1992	87

About Alan Seabaugh

Alan Seabaugh is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Condensed Matter Physics, having authored 201 papers that have together received 10.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (97 papers), Advancements in Semiconductor Devices and Circuit Design (90 papers), Semiconductor Quantum Structures and Devices (65 papers), Quantum and electron transport phenomena (29 papers), 2D Materials and Applications (27 papers), Nanowire Synthesis and Applications (26 papers), Ferroelectric and Negative Capacitance Devices (24 papers) and Graphene research and applications (24 papers). The work is most often cited by research in Electrical and Electronic Engineering (7.8k citations), Materials Chemistry (4.9k citations), Atomic and Molecular Physics, and Optics (2.0k citations), Biomedical Engineering (2.0k citations) and Electronic, Optical and Magnetic Materials (473 citations). Alan Seabaugh has collaborated with scholars based in United States, South Korea and Slovenia. Frequent co-authors include Qin Zhang, Gianluca Fiori, Luigi Colombo, S. Banerjee, Francesco Bonaccorso, Tomás Palacios, Daniel Neumaier, Giuseppe Iannaccone, Hao Lü and Wei Zhao. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Applied Physics and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Alan Seabaugh's Hit Papers

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