V. Kumar

2.3k citations

66 papers · 1.9k · h-index 23

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 62
- GaN-based semiconductor devices and materials 62
Electrical and Electronic Engineering 51
- Radio Frequency Integrated Circuit Design 25
- Semiconductor materials and devices 21
- Silicon Carbide Semiconductor Technologies 17
- Advancements in Semiconductor Devices and Circuit Design 6

Co-authors: I. Adesida (51 shared papers)R. Schwindt (23 shared papers)A. Kuliev (16 shared papers)Wu Lu (9 shared papers)D. Selvanathan (7 shared papers)E. L. Piner (4 shared papers)Farid Khan (8 shared papers)J. Yang (4 shared papers)
Journals: Electronics Letters (13 papers)Solid-State Electronics (5 papers)IEEE Microwave and Wireless Components Letters (4 papers)IEEE Electron Device Letters (4 papers)IEEE Transactions on Electron Devices (3 papers)
Partner nations: United States South Korea Türkiye

In The Last Decade

V. Kumar

66 papers receiving 1.8k citations

Peers

Countries citing papers authored by V. Kumar

Since Specialization

Citations

This map shows the geographic impact of V. Kumar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Kumar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Kumar more than expected).

Fields of papers citing papers by V. Kumar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Kumar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Kumar. The network helps show where V. Kumar may publish in the future.

Co-authors

The 25 scholars most cited alongside V. Kumar, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. Kumar Line = papers co-authored together V. Kumar links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 66 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz IEEE Electron Device Letters ·V. Kumar, Wu Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, I. Adesida	2002	191
2	Solar-blind AlGaN photodiodes with very low cutoff wavelength Applied Physics Letters ·D. Walker, V. Kumar, K. Mi, Peter Sandvik, Patrick Kung, X. H. Zhang, Manijeh Razeghi	2000	150
3	Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n–GaN Journal of Applied Physics ·V. Kumar, L. Zhou, D. Selvanathan, I. Adesida	2002	112
4	A comparative study of surface passivation on AlGaN/GaN HEMTs Solid-State Electronics ·Wu Lu, V. Kumar, R. Schwindt, E. L. Piner, I. Adesida	2002	112
5	ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance IEEE Electron Device Letters ·Andrew J. Green, J. Gillespie, Robert Fitch, Dennis E. Walker, Miles Lindquist, Antonio Crespo, Dan Brooks, Edward Beam, Andy Xie, V. Kumar, J. L. Jiménez, Cathy Lee, Yu Cao, Kelson D. Chabak, Gregg H. Jessen	2019	105
6	Bendable GaN high electron mobility transistors on plastic substrates Journal of Applied Physics ·Keon Jae Lee, Matthew Meitl, Jong‐Hyun Ahn, John A. Rogers, Ralph G. Nuzzo, V. Kumar, I. Adesida	2006	92
7	High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate Electronics Letters ·V. Kumar, A. Kuliev, Tsuyoshi Tanaka, Y. Otoki, I. Adesida	2003	85
8	60Co gamma radiation effects on DC, RF, and pulsed I–V characteristics of AlGaN/GaN HEMTs Solid-State Electronics ·Özgür Aktaş, A. Kuliev, V. Kumar, R. Schwindt, S. Toshkov, D. Costescu, James F. Stubbins, I. Adesida	2003	83
9	DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration IEEE Transactions on Electron Devices ·Wu Lu, V. Kumar, E. L. Piner, I. Adesida	2003	66
10	A low gate bias model extraction technique for AlGaN/GaN HEMTs IEEE Transactions on Microwave Theory and Techniques ·Guang Chen, V. Kumar, R. Schwindt, I. Adesida	2006	63
11	Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers IEEE Microwave and Wireless Components Letters ·J.-W. Lee, A. Kuliev, V. Kumar, R. Schwindt, I. Adesida	2004	57
12	Field-plated 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs with varying field-plate length IEEE Transactions on Electron Devices ·V. Kumar, Guang Chen, Shiping Guo, I. Adesida	2006	46
13	Low Resistance Ti/Al/Mo/Au Ohmic Contacts for AlGaN/GaN Heterostructure Field Effect Transistors physica status solidi (a) ·D. Selvanathan, Ling Zhou, V. Kumar, I. Adesida	2002	45
14	Comparative study of thermally cured and electron-beam-exposed hydrogen silsesquioxane resists Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·(unknown), Michael J. Word, V. Kumar, I. Adesida	2008	44
15	High rate etching of AlN using BCl3/Cl2/Ar inductively coupled plasma Materials Science and Engineering B ·Farid Khan, Lei Zhou, V. Kumar, I. Adesida, Robert S. Okojie	2002	38
16	DC, RF, and microwave noise performances of AlGaN/GaN HEMTs on sapphire substrates IEEE Transactions on Microwave Theory and Techniques ·Wu Lu, V. Kumar, R. Schwindt, E. L. Piner, I. Adesida	2002	37
17	High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz Solid-State Electronics ·V. Kumar, A. Kuliev, R. Schwindt, Maya Muir, G. Simin, J. Yang, M. Asif Khan, I. Adesida	2003	31
18	Plasma-induced damage study for n-GaN using inductively coupled plasma reactive ion etching Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Farid Khan, Lei Zhou, V. Kumar, I. Adesida	2001	30
19	AlGaN/InGaN HEMTs for RF current collapse suppression Electronics Letters ·W. Lanford, V. Kumar, R. Schwindt, A. Kuliev, I. Adesida, A. M. Dabiran, A. M. Wowchak, P. P. Chow, J.-W. Lee	2004	27
20	Characterisation of iridium Schottky contacts on n -Al _x Ga _{1− x} N Electronics Letters ·V. Kumar, D. Selvanathan, A. Kuliev, S. Kim, J.S. Flynn, I. Adesida	2003	26

About V. Kumar

V. Kumar is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 66 papers that have together received 1.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (62 papers), Radio Frequency Integrated Circuit Design (25 papers), Semiconductor materials and devices (21 papers), Ga2O3 and related materials (19 papers), Silicon Carbide Semiconductor Technologies (17 papers), Semiconductor Quantum Structures and Devices (12 papers), Metal and Thin Film Mechanics (6 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). The work is most often cited by research in Condensed Matter Physics (1.6k citations), Electronic, Optical and Magnetic Materials (601 citations), Electrical and Electronic Engineering (1.4k citations), Atomic and Molecular Physics, and Optics (544 citations) and Mechanics of Materials (230 citations). V. Kumar has collaborated with scholars based in United States, South Korea and Türkiye. Frequent co-authors include I. Adesida, R. Schwindt, A. Kuliev, Wu Lu, D. Selvanathan, E. L. Piner, Farid Khan, J. Yang, G. Simin and M. Asif Khan. Their work appears in journals such as Electronics Letters, Solid-State Electronics, IEEE Microwave and Wireless Components Letters, IEEE Electron Device Letters and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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V. Kumar

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