B. Brar

1.5k citations

53 papers · 1.2k · h-index 18

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radio Frequency Integrated Circuit Design
- Microwave Engineering and Waveguides
- Integrated Circuits and Semiconductor Failure Analysis

Papers in

Electrical and Electronic Engineering 49
- Radio Frequency Integrated Circuit Design 21
- Semiconductor materials and devices 18
- Advancements in Semiconductor Devices and Circuit Design 17
- Semiconductor Lasers and Optical Devices 10
- Microwave Engineering and Waveguides 10
- Photonic and Optical Devices 9
- Advanced Semiconductor Detectors and Materials 6
Atomic and Molecular Physics, and Optics 30
- Semiconductor Quantum Structures and Devices 28

Co-authors: G. D. Wilk (5 shared papers)Alan Seabaugh (11 shared papers)T.P.E. Broekaert (7 shared papers)Frank Morris (7 shared papers)Gary Frazier (7 shared papers)G. Nagy (10 shared papers)Robert M. Wallace (2 shared papers)Edward Beam (5 shared papers)
Journals: IEEE Electron Device Letters (4 papers)Applied Physics Letters (4 papers)Solid-State Electronics (2 papers)Superlattices and Microstructures (2 papers)IEEE Journal of Solid-State Circuits (1 paper)
Partner nations: United States Germany France

In The Last Decade

B. Brar

53 papers receiving 1.1k citations

Peers

Countries citing papers authored by B. Brar

Since Specialization

Citations

This map shows the geographic impact of B. Brar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Brar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Brar more than expected).

Fields of papers citing papers by B. Brar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Brar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Brar. The network helps show where B. Brar may publish in the future.

Co-authors

The 25 scholars most cited alongside B. Brar, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Brar Line = papers co-authored together B. Brar links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 53 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	SiO 2 film thickness metrology by x-ray photoelectron spectroscopy Applied Physics Letters ·Zhaoming Lu, J. P. McCaffrey, B. Brar, G. D. Wilk, Robert M. Wallace, L. C. Feldman, Sing-Pin Tay	1997	192
2	A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter IEEE Journal of Solid-State Circuits ·T.P.E. Broekaert, B. Brar, J.P.A. van der Wagt, Alan Seabaugh, Frank Morris, T. S. Moise, Edward Beam, Gary Frazier	1998	173
3	Intersubband resonances in InAs/AlSb quantum wells: Selection rules, matrix elements, and the depolarization field Physical review. B, Condensed matter ·Richard J. Warburton, C. Gauer, A. Wixforth, J. P. Kotthaus, B. Brar, H. Kroemer	1996	73
4	Interband impact ionization by terahertz illumination of InAs heterostructures Applied Physics Letters ·Andrea Markelz, N. G. Asmar, B. Brar, E. G. Gwinn	1996	73
5	An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier IEEE Microwave and Wireless Components Letters ·J.B. Hacker, J. Bergman, G. Nagy, Gerard Sullivan, C. Kadow, Heng‐Kuang Lin, A. C. Gossard, M.J.W. Rodwell, B. Brar	2004	64
6	InAs/AlSb HEMT and Its Application to Ultra-Low-Power Wideband High-Gain Low-Noise Amplifiers IEEE Transactions on Microwave Theory and Techniques ·Bob Yintat, Joshua Bergman, Peter Chen, Jonathan B. Hacker, Gerard Sullivan, G. Nagy, B. Brar	2006	56
7	Impact ionization in high performance AlGaN/GaN HEMTs B. Brar, K. S. Boutros, R.E. DeWarnes, V. Tilak, R.J. Shealy, L.F. Eastman	2003	53
8	Electrical characteristics of high-quality sub-25-/spl Aring/ oxides grown by ultraviolet ozone exposure at low temperature IEEE Electron Device Letters ·G. D. Wilk, B. Brar	1999	53
9	An ultra-low power InAs/AlSb HEMT W-band low-noise amplifier IEEE MTT-S International Microwave Symposium Digest, 2005. ·J.B. Hacker, J. Bergman, G. Nagy, Gerard Sullivan, C. Kadow, Heng‐Kuang Lin, A. C. Gossard, M.J.W. Rodwell, B. Brar	2005	32
10	Resonant-tunneling mixed-signal circuit technology Solid-State Electronics ·Alan Seabaugh, B. Brar, T.P.E. Broekaert, Frank Morris, P. van der Wagt, Gary Frazier	1999	29
11	Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory Alan Seabaugh, Xue-Ran Deng, T.G.W. Blake, B. Brar, T.P.E. Broekaert, Roger K. Lake, Frank Morris, Gary Frazier	2002	29
12	Energy-dependant cyclotron mass in InAs/AlSb quantum wells Semiconductor Science and Technology ·C. Gauer, J. Scriba, A. Wixforth, J. P. Kotthaus, C. R. Bolognesi, C. Nguyen, B. Brar, H. Kroemer	1994	26
13	Ultra high frequency static dividers < 150 GHz in a narrow mesa InGaAs/InP DHBT technology Zach Griffith, M. Dablstrom, M.J.W. Rodwell, Miguel Urteaga, R.L. Pierson, Petra Rowell, B. Brar, Sangmin Lee, Nguyen Nguyen, Chanh Nguyen	2004	25
14	InAs/AlSb HFETs with f/sub τ/ and f/sub max/ above 150 GHz for low-power MMICs J. Bergman, G. Nagy, G.J. Sullivan, B. Brar, C. Kadow, Heng‐Kuang Lin, A. C. Gossard, M.J.W. Rodwell	2003	23
15	Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator Applied Physics Letters ·D.-H. Kim, Jesús A. del Alamo, D.A. Antoniadis, J. Li, J. M. Kuo, P. Pinsukanjana, Yung-Chung Kao, P. Chen, A. Papavasiliou, C.A. King, Eric Regan, Miguel Urteaga, B. Brar, T.-W. Kim	2012	22
16	RTD/CMOS nanoelectronic circuits: thin-film InP-based resonant tunneling diodes integrated with CMOS circuits IEEE Electron Device Letters ·J. Bergman, Jae Joon Chang, Young Hoon Joo, B. Matinpour, J. Laskar, N.M. Jokerst, M.A. Brooke, B. Brar, Edward Beam	1999	21
17	A 204.8GHz Static Divide-by-8 Frequency Divider in 250nm InP HBT Zach Griffith, Miguel Urteaga, R.L. Pierson, Petra Rowell, M.J.W. Rodwell, B. Brar	2010	21
18	Low-voltage, high-performance InAs/AlSb HEMTs with power gain above 100 GHz at 100 mV drain bias J. Bergman, G. Nagy, Gerard Sullivan, Amal Ikhlassi, B. Brar, C. Kadow, Heng‐Kuang Lin, A. C. Gossard, M.J.W. Rodwell	2004	20
19	A monolithic 4 bit 2 GSps resonant tunneling analog-to-digital converter T.P.E. Broekaert, B. Brar, J.P.A. van der Wagt, Alan Seabaugh, T. S. Moise, Frank Morris, Edward Beam, Gary Frazier	1997	15
20	Enhancement-Mode Metamorphic HEMT on GaAs Substrate With 2 S/mm $g_{m}$ and 490 GHz $f_{T}$ IEEE Electron Device Letters ·Wonill Ha, K. Shinohara, B. Brar	2008	13

About B. Brar

B. Brar is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Condensed Matter Physics and Biomedical Engineering, having authored 53 papers that have together received 1.2k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (28 papers), Radio Frequency Integrated Circuit Design (21 papers), Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers), Semiconductor Lasers and Optical Devices (10 papers), Microwave Engineering and Waveguides (10 papers), Photonic and Optical Devices (9 papers) and Advanced Semiconductor Detectors and Materials (6 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (641 citations), Electrical and Electronic Engineering (999 citations), Condensed Matter Physics (120 citations), Surfaces, Coatings and Films (61 citations) and Structural Biology (7 citations). B. Brar has collaborated with scholars based in United States, Germany and France. Frequent co-authors include G. D. Wilk, Alan Seabaugh, T.P.E. Broekaert, Frank Morris, Gary Frazier, G. Nagy, Robert M. Wallace, Edward Beam, J. P. McCaffrey and Zhaoming Lu. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Solid-State Electronics, Superlattices and Microstructures and IEEE Journal of Solid-State Circuits.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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