P. Saunier

2.5k citations

92 papers · 1.9k · h-index 24

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 84
- Radio Frequency Integrated Circuit Design 54
- Semiconductor materials and devices 31
- Microwave Engineering and Waveguides 12
- Semiconductor Lasers and Optical Devices 11
- Silicon Carbide Semiconductor Technologies 10
Condensed Matter Physics 54
- GaN-based semiconductor devices and materials 54

Co-authors: Edward Beam (17 shared papers)H.Q. Tserng (28 shared papers)Xiang Gao (13 shared papers)Hua-Quen Tserng (11 shared papers)A. Ketterson (18 shared papers)Cathy Lee (6 shared papers)Michael L. Schuette (13 shared papers)D.C. Dumka (7 shared papers)
Journals: IEEE Electron Device Letters (15 papers)Electronics Letters (9 papers)IEEE Transactions on Microwave Theory and Techniques (3 papers)IEEE Transactions on Electron Devices (3 papers)Applied Physics Letters (2 papers)
Partner nations: United States United Kingdom

In The Last Decade

P. Saunier

89 papers receiving 1.8k citations

Peers

Countries citing papers authored by P. Saunier

Since Specialization

Citations

This map shows the geographic impact of P. Saunier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Saunier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Saunier more than expected).

Fields of papers citing papers by P. Saunier

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Saunier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Saunier. The network helps show where P. Saunier may publish in the future.

Co-authors

The 25 scholars most cited alongside P. Saunier, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Saunier Line = papers co-authored together P. Saunier links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 92 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance IEEE Electron Device Letters ·Ronghua Wang, P. Saunier, Xiu Xing, Chuanxin Lian, Xiang Gao, Shiping Guo, Gregory L. Snider, Patrick Fay, Debdeep Jena, Huili Grace Xing	2010	143
2	TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs IEEE Electron Device Letters ·U. Chowdhury, J. L. Jiménez, C. Lee, Edward Beam, P. Saunier, T. Balistreri, Seong-Yong Park, Tae-Hun Lee, J. Wang, M.J. Kim, Jungwoo Joh, Jesús A. del Alamo	2008	133
3	A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology IEEE Journal of Solid-State Circuits ·Charles F. Campbell, Cathy Lee, Victoria Williams, Ming-Yih Kao, Hua-Quen Tserng, P. Saunier, Tony Balisteri	2009	130
4	MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$ IEEE Electron Device Letters ·Jia Guo, Guowang Li, Faiza Faria, Yu Cao, Ronghua Wang, Jai Verma, Xiang Gao, Shiping Guo, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier, Mark A. Wistey, Debdeep Jena, Huili Xing	2012	118
5	Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$ IEEE Electron Device Letters ·Dong Seup Lee, Han Wang, Allen Hsu, M. Azize, Oleg Laboutin, Yu Cao, (unknown), Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier, Tomás Palacios	2013	100
6	Gate-recessed integrated E/D GaN HEMT technology with f_T/f_max >300 GHz IEEE Electron Device Letters ·Michael L. Schuette, A. Ketterson, Bo Song, Edward Beam, Tso-Min Chou, Manyam Pilla, Hua-Quen Tserng, Xiang Gao, Shiping Guo, Patrick Fay, Huili Grace Xing, P. Saunier	2013	93
7	Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs IEEE Transactions on Nuclear Science ·Jin Chen, Yevgeniy Puzyrev, Rong Jiang, En Xia Zhang, Michael W. McCurdy, Daniel M. Fleetwood, Ronald D. Schrimpf, Sokrates T. Pantelides, Aaron R. Arehart, Steven A. Ringel, P. Saunier, Cathy Lee	2015	92
8	Physical degradation of GaN HEMT devices under high drain bias reliability testing Microelectronics Reliability ·S.Y. Park, Carlo Floresca, Uttiya Chowdhury, J. L. Jiménez, Cathy Lee, Edward Beam, P. Saunier, T. Balistreri, Moon J. Kim	2009	78
9	Enhancement-Mode InAlN/AlN/GaN HEMTs With $ \hbox{10}^{-12}\ \hbox{A/mm}$ Leakage Current and $ \hbox{10}^{12}$ on/off Current Ratio IEEE Electron Device Letters ·Ronghua Wang, P. Saunier, Yong Tang, Tian Fang, Xiang Gao, Shiping Guo, Gregory L. Snider, Patrick Fay, Debdeep Jena, Huili Grace Xing	2011	61
10	AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHz Electronics Letters ·D.C. Dumka, C. Lee, H.Q. Tserng, P. Saunier, Mahesh Kumar	2004	60
11	Effects of AlGaN/GaN HEMT structure on RF reliability Electronics Letters ·C. Lee, L. Witkowski, H.Q. Tserng, P. Saunier, R. Birkhahn, D. T. Olson, Donald B. Olson, G.O. Munns, Shiping Guo, B. Albert	2005	53
12	High-efficiency millimeter-wave GaAs/GaAlAs power HEMT's IEEE Electron Device Letters ·P. Saunier, J.W. Lee	1986	50
13	InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF Applications IEEE Transactions on Electron Devices ·P. Saunier, Michael L. Schuette, Tso-Min Chou, Hua-Quen Tserng, A. Ketterson, Edward Beam, Manyam Pilla, Xiang Gao	2013	46
14	Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs IEEE Electron Device Letters ·Dong Seup Lee, Oleg Laboutin, Yu Cao, Wayne Johnson, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier, Tomás Palacios	2012	39
15	Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates IEEE Transactions on Electron Devices ·Bo Song, Berardi Sensale‐Rodriguez, Ronghua Wang, Jia Guo, Zongyang Hu, Yuanzheng Yue, Faiza Faria, Michael L. Schuette, A. Ketterson, Edward Beam, P. Saunier, Xiang Gao, Shiping Guo, Patrick Fay, Debdeep Jena, Huili Grace Xing	2014	36
16	A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology Charles F. Campbell, Cathy Lee, Victoria Williams, Ming-Yih Kao, Hua-Quen Tserng, P. Saunier	2008	33
17	Ultrafast guided-light beam deflection/switching and modulation using simulated electro-optic prism structures in LiNbO3 waveguides Applied Physics Letters ·C.S. Tsai, P. Saunier	1975	30
18	Progress in GaN Performances and Reliability P. Saunier, C. Lee, Anthony Balistreri, D.C. Dumka, J. L. Jiménez, H.Q. Tserng, Min-Lu Kao, P.C. Chao, K. Chu, Andy Souzis, I. Eliashevich, Shiping Guo, Jesús A. del Alamo, Jungwoo Joh, M. S. Shur	2007	30
19	High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-in GaAs substrates IEEE Electron Device Letters ·D.C. Dumka, H.Q. Tserng, Ming-Yih Kao, Edward Beam, P. Saunier	2003	30
20	Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy physica status solidi (a) ·Jia Guo, Yu Cao, Chuanxin Lian, Tom Zimmermann, Guowang Li, Jai Verma, Xiang Gao, Shiping Guo, P. Saunier, Mark A. Wistey, Debdeep Jena, Huili Xing	2011	29

About P. Saunier

P. Saunier is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 92 papers that have together received 1.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (54 papers), Radio Frequency Integrated Circuit Design (54 papers), Semiconductor Quantum Structures and Devices (32 papers), Semiconductor materials and devices (31 papers), Ga2O3 and related materials (13 papers), Microwave Engineering and Waveguides (12 papers), Semiconductor Lasers and Optical Devices (11 papers) and Silicon Carbide Semiconductor Technologies (10 papers). The work is most often cited by research in Condensed Matter Physics (1.5k citations), Electronic, Optical and Magnetic Materials (564 citations), Electrical and Electronic Engineering (1.6k citations), Atomic and Molecular Physics, and Optics (531 citations) and Materials Chemistry (210 citations). P. Saunier has collaborated with scholars based in United States and United Kingdom. Frequent co-authors include Edward Beam, H.Q. Tserng, Xiang Gao, Hua-Quen Tserng, A. Ketterson, Cathy Lee, Michael L. Schuette, D.C. Dumka, Ming-Yih Kao and Patrick Fay. Their work appears in journals such as IEEE Electron Device Letters, Electronics Letters, IEEE Transactions on Microwave Theory and Techniques, IEEE Transactions on Electron Devices and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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