M. Azize

2.0k citations

35 papers · 1.8k · 1 hit paper · h-index 15

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Biomaterials top 5%
- Electrospun Nanofibers in Biomedical Applications

Papers in

Condensed Matter Physics 29
- GaN-based semiconductor devices and materials 28
Electronic, Optical and Magnetic Materials 15
- Ga2O3 and related materials 15

Co-authors: Tomás Palacios (12 shared papers)Keekyoung Kim (1 shared paper)Mehdi Nikkhah (1 shared paper)Pınar Zorlutuna (1 shared paper)Su Ryon Shin (1 shared paper)Sang Bok Kim (1 shared paper)Kai‐Tak Wan (1 shared paper)Ali Khademhosseini (1 shared paper)
Journals: Journal of Applied Physics (7 papers)Applied Physics Letters (5 papers)Journal of Crystal Growth (4 papers)IEEE Electron Device Letters (3 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: France United States Spain

In The Last Decade

M. Azize

35 papers receiving 1.8k citations

M. Azize's Hit Papers

align trajectories log scale

Carbon-Nanotube-Embedded Hydrogel Sheets for Engineering Cardiac Constructs and Bioactuators 2013 · 856 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2013 ACS Nano

Peers

Countries citing papers authored by M. Azize

Since Specialization

Citations

This map shows the geographic impact of M. Azize's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Azize with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Azize more than expected).

Fields of papers citing papers by M. Azize

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Azize. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Azize. The network helps show where M. Azize may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Azize, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Azize Line = papers co-authored together M. Azize links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 35 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Carbon-Nanotube-Embedded Hydrogel Sheets for Engineering Cardiac Constructs and Bioactuators ACS Nano ·Su Ryon Shin, Sung Mi Jung, Momen Zalabany, Keekyoung Kim, Pınar Zorlutuna, Sang Bok Kim, Mehdi Nikkhah, Masoud Khabiry Hit paper breakdown →	2013	856
2	GaN-on-Si Vertical Schottky and p-n Diodes IEEE Electron Device Letters ·Yuhao Zhang, Min Sun, Daniel Piedra, M. Azize, Xu Zhang, Tatsuya Fujishima, Tomás Palacios	2014	171
3	Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes IEEE Transactions on Electron Devices ·Yuhao Zhang, Min Sun, Hiu Yung Wong, Yuxuan Cosmi Lin, Puneet Srivastava, Christopher Hatem, M. Azize, Daniel Piedra	2015	146
4	Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$ IEEE Electron Device Letters ·Dong Seup Lee, Han Wang, Allen Hsu, M. Azize, Oleg A. Laboutin, Yu Cao, Edward Beam, A. Ketterson	2013	102
5	Effect of substrate-induced strain in the transport properties of AlGaN/GaN heterostructures Journal of Applied Physics ·M. Azize, Tomás Palacios	2010	72
6	Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE physica status solidi (a) ·Zahia Bougrioua, M. Azize, P. Lorenzini, Marguerite Laügt, Heinz Haas	2005	59
7	Top-down fabrication of AlGaN/GaN nanoribbons Applied Physics Letters ·M. Azize, Tomás Palacios	2011	52
8	High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons IEEE Electron Device Letters ·M. Azize, Allen Hsu, Omair I. Saadat, Matthew J. Smith, Xiang Gao, Shiping Guo, Silvija Gradečak, Tomás Palacios	2011	33
9	Impact of Al2O3 Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·Sameer J. Joglekar, M. Azize, Eric J. Jones, Daniel Piedra, Silvija Gradečak, Tomás Palacios	2015	30
10	Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures Journal of Applied Physics ·Philippe Vennéguès, Zahia Bougrioua, Jean-Marc Bethoux, M. Azize, O. Tottereau	2004	29
11	High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Roberto Cuerdo, F. Calle, Alejandro F. Braña, Yvon Cordier, M. Azize, N. Baron, Sébastien Chenot, E. Muñoz	2008	28
12	AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination Journal of Crystal Growth ·Yvon Cordier, M. Azize, N. Baron, Sébastien Chenot, O. Tottereau, J. Massies	2007	27
13	Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Zahia Bougrioua, M. Azize, A. Jiménez, Alejandro F. Braña, P. Lorenzini, Bernard Beaumont, E. Muñoz, Pierre Gibart	2005	23
14	Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates Journal of Crystal Growth ·M. Azize, Zahia Bougrioua, Pierre Gibart	2007	19
15	Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN∕GaN heterostructures Applied Physics Letters ·P. Lorenzini, Zahia Bougrioua, Antoine Tiberj, R. Tauk, M. Azize, M. Sakowicz, Krzysztof Karpierz, W. Knap	2005	18
16	Investigation of AlGaN∕AlN∕GaN heterostructures for magnetic sensor application from liquid helium temperature to 300°C Applied Physics Letters ·L. Bouguen, Sylvie Contreras, B. Jouault, L. Kończewicz, J. Camassel, Yvon Cordier, M. Azize, Sébastien Chenot	2008	15
17	Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures Journal of Crystal Growth ·Yvon Cordier, M. Azize, N. Baron, Zahia Bougrioua, Sébastien Chenot, O. Tottereau, J. Massies, Pierre Gibart	2007	14
18	Low temperature electron mobility and concentration under the gate of AlGaN∕GaN field effect transistors Journal of Applied Physics ·M. Sakowicz, R. Tauk, J. Łusakowski, Antoine Tiberj, W. Knap, Zahia Bougrioua, M. Azize, P. Lorenzini	2006	11
19	Correlating stress generation and sheet resistance in InAlN/GaN nanoribbon high electron mobility transistors Applied Physics Letters ·Eric J. Jones, M. Azize, Matthew J. Smith, Tomás Palacios, Silvija Gradečak	2012	10
20	Carrier profiles in Fe doped GaN layers grown by MOVPE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·M. Azize, Zahia Bougrioua, Patrick Girard, P. Gibart	2005	10

About M. Azize

M. Azize is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 35 papers that have together received 1.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (28 papers), Semiconductor materials and devices (16 papers), Ga2O3 and related materials (15 papers), ZnO doping and properties (7 papers), Silicon Carbide Semiconductor Technologies (6 papers), Metal and Thin Film Mechanics (4 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and Semiconductor Quantum Structures and Devices (2 papers). The work is most often cited by research in Condensed Matter Physics (857 citations), Biomaterials (371 citations), Molecular Medicine (121 citations), Electronic, Optical and Magnetic Materials (441 citations) and Biomedical Engineering (725 citations). M. Azize has collaborated with scholars based in France, United States and Spain. Frequent co-authors include Tomás Palacios, Keekyoung Kim, Mehdi Nikkhah, Pınar Zorlutuna, Su Ryon Shin, Sang Bok Kim, Kai‐Tak Wan, Ali Khademhosseini, Jing Kong and Sung Mi Jung. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Journal of Crystal Growth, IEEE Electron Device Letters and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

M. Azize

Impact in

Papers in i

In The Last Decade

M. Azize

M. Azize's Hit Papers

Peers

Countries citing papers authored by M. Azize

Fields of papers citing papers by M. Azize

All Works

About M. Azize

Explore authors with similar magnitude of impact

Papers in