J.A. Roussos

1.6k citations

49 papers · 1.4k · 1 hit paper · h-index 18

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 39
- Semiconductor materials and devices 22
- Radio Frequency Integrated Circuit Design 12
- Silicon Carbide Semiconductor Technologies 10
- Advancements in Semiconductor Devices and Circuit Design 8
Condensed Matter Physics 31
- GaN-based semiconductor devices and materials 31

Co-authors: S.C. Binari (14 shared papers)D. S. Katzer (23 shared papers)D. D. Koleske (3 shared papers)A. E. Wickenden (3 shared papers)R. L. Henry (2 shared papers)H.B. Dietrich (1 shared paper)Doewon Park (1 shared paper)David F. Storm (17 shared papers)
Journals: IEEE Electron Device Letters (6 papers)Electronics Letters (4 papers)Journal of Crystal Growth (3 papers)Applied Physics Letters (3 papers)IEEE Transactions on Nuclear Science (3 papers)
Partner nations: United States Italy Greece

In The Last Decade

J.A. Roussos

47 papers receiving 1.3k citations

J.A. Roussos's Hit Papers

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Trapping effects and microwave power performance in AlGaN/GaN HEMTs 2001 · 548 citations

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Countries citing papers authored by J.A. Roussos

Since Specialization

Citations

This map shows the geographic impact of J.A. Roussos's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.A. Roussos with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.A. Roussos more than expected).

Fields of papers citing papers by J.A. Roussos

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.A. Roussos. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.A. Roussos. The network helps show where J.A. Roussos may publish in the future.

Co-authors

The 25 scholars most cited alongside J.A. Roussos, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.A. Roussos Line = papers co-authored together J.A. Roussos links everyone, so they are left out of the graph.

All Works

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#	Work
1	Trapping effects and microwave power performance in AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·S.C. Binari, K. Ikossi, J.A. Roussos, W. Kruppa, Doewon Park, H.B. Dietrich, D. D. Koleske, A. E. Wickenden, R. L. Henry Hit paper breakdown →	2001	548
2	Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation IEEE Electron Device Letters ·Andrew Edwards, J. Mittereder, S.C. Binari, D. S. Katzer, David F. Storm, J.A. Roussos	2005	111
3	Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress Applied Physics Letters ·J. Mittereder, S.C. Binari, P. B. Klein, J.A. Roussos, D. S. Katzer, David F. Storm, D. D. Koleske, A. E. Wickenden, R. L. Henry	2003	68
4	<inline-formula> <tex-math notation="TeX">${\rm SiN}_{x}$ </tex-math></inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <tex-math notation="TeX">${\rm THz}\cdot{\rm V}$ </tex-math></inline-formula> Johnson Figure of Merit IEEE Electron Device Letters ·Brian P. Downey, David J. Meyer, D. S. Katzer, J.A. Roussos, Ming Pan, Xiang Gao	2014	66
5	Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates IEEE Electron Device Letters ·Kelson D. Chabak, J. Gillespie, V. Miller, Antonio Crespo, J.A. Roussos, Manuel Trejo, Dennis E. Walker, G. D. Via, Gregg H. Jessen, J. Wasserbauer, Firooz Faili, D.I. Babic, Daniel Francis, Felix Ejeckam	2009	55
6	High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates IEEE Electron Device Letters ·David J. Meyer, David A. Deen, David F. Storm, Mario G. Ancona, D. S. Katzer, Robert B. Bass, J.A. Roussos, Brian P. Downey, Steven C. Binari, Theodosia Gougousi, Tanya Paskova, Edward A. Preble, K. R. Evans	2013	49
7	Ion induced charge collection in GaAs MESFETs IEEE Transactions on Nuclear Science ·A.B. Campbell, A.R. Knudson, Dale McMorrow, Warren D. Anderson, J.A. Roussos, S. Espy, S. Büchner, Keith Kang, D.V. Kerns, S. Kens	1989	45
8	X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors IEEE Electron Device Letters ·Shahadat H. Sohel, Andy Xie, Edward Beam, Hao Xue, J.A. Roussos, Towhidur Razzak, Sanyam Bajaj, Yu Cao, David J. Meyer, Wu Lu, Siddharth Rajan	2018	40
9	AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization Journal of Crystal Growth ·David F. Storm, D. S. Katzer, J.A. Roussos, J. Mittereder, Robert B. Bass, S.C. Binari, Drew Hanser, Edward A. Preble, K. R. Evans	2007	34
10	Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors IEEE Electron Device Letters ·David J. Meyer, Andrew D. Koehler, Karl D. Hobart, (unknown), Tatyana I. Feygelson, Travis J. Anderson, J.A. Roussos, Marko J. Tadjer, Brian P. Downey, D. S. Katzer, Bradford B. Pate, Mario G. Ancona	2014	32
11	Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes Applied Physics Letters ·Tyler A. Growden, David F. Storm, Evan M. Cornuelle, E. R. Brown, Weidong Zhang, Brian P. Downey, J.A. Roussos, Nicholas Cronk, Laura B. Ruppalt, James G. Champlain, Paul R. Berger, David J. Meyer	2020	28
12	Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs Journal of Crystal Growth ·D. S. Katzer, David F. Storm, S.C. Binari, J.A. Roussos, B. V. Shanabrook, E. R. Glaser	2003	28
13	Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping Applied Physics Letters ·David F. Storm, D. S. Katzer, S.C. Binari, E. R. Glaser, B. V. Shanabrook, J.A. Roussos	2002	26
14	MBE growth of AlGaN/GaN HEMTs with high power density Electronics Letters ·D. S. Katzer, S.C. Binari, David F. Storm, J.A. Roussos, B. V. Shanabrook, E. R. Glaser	2002	26
15	Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates Electronics Letters ·David F. Storm, J.A. Roussos, D. S. Katzer, J. Mittereder, Robert B. Bass, S.C. Binari, Drew Hanser, Edward A. Preble, K. R. Evans	2006	22
16	Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures Solid-State Electronics ·David F. Storm, D. S. Katzer, David A. Deen, Robert B. Bass, David J. Meyer, J.A. Roussos, S.C. Binari, T. Paskova, Edward A. Preble, K. R. Evans	2010	19
17	AlN/GaN insulated gate HEMTs with HfO ₂ gate dielectric Electronics Letters ·David A. Deen, S.C. Binari, David F. Storm, D. S. Katzer, J.A. Roussos, Justin C. Hackley, Theodosia Gougousi	2009	18
18	Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates Journal of Crystal Growth ·David F. Storm, D. S. Katzer, J.A. Roussos, J. Mittereder, Robert B. Bass, S.C. Binari, Lin Zhou, David J. Smith, Drew Hanser, Edward A. Preble, K. R. Evans	2007	18
19	Epitaxial Single-Crystal ScAlN on 4H-SiC for High-Velocity, Low-Loss SAW Devices Vikrant J. Gokhale, Brian P. Downey, Matthew T. Hardy, Eric N. Jin, J.A. Roussos, David J. Meyer	2020	17
20	Passive High Power RF Comb Filters Using Epitaxial GaN/NbN/SiC HBARs IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control ·Vikrant J. Gokhale, Brian P. Downey, J.A. Roussos, D. S. Katzer, David J. Meyer	2021	13

About J.A. Roussos

J.A. Roussos is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Biomedical Engineering and Electronic, Optical and Magnetic Materials, having authored 49 papers that have together received 1.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (31 papers), Semiconductor materials and devices (22 papers), Radio Frequency Integrated Circuit Design (12 papers), Silicon Carbide Semiconductor Technologies (10 papers), Semiconductor Quantum Structures and Devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers), Acoustic Wave Resonator Technologies (6 papers) and Ga2O3 and related materials (6 papers). The work is most often cited by research in Condensed Matter Physics (1.2k citations), Electronic, Optical and Magnetic Materials (509 citations), Electrical and Electronic Engineering (1.0k citations), Atomic and Molecular Physics, and Optics (305 citations) and Materials Chemistry (334 citations). J.A. Roussos has collaborated with scholars based in United States, Italy and Greece. Frequent co-authors include S.C. Binari, D. S. Katzer, D. D. Koleske, A. E. Wickenden, R. L. Henry, H.B. Dietrich, Doewon Park, David F. Storm, W. Kruppa and K. Ikossi. Their work appears in journals such as IEEE Electron Device Letters, Electronics Letters, Journal of Crystal Growth, Applied Physics Letters and IEEE Transactions on Nuclear Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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J.A. Roussos

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