J. Gillespie

2.1k citations

79 papers · 1.7k · h-index 25

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 66
- Semiconductor materials and devices 34
- Radio Frequency Integrated Circuit Design 21
- Silicon Carbide Semiconductor Technologies 13
Condensed Matter Physics 58
- GaN-based semiconductor devices and materials 58

Co-authors: Robert Fitch (50 shared papers)Antonio Crespo (42 shared papers)G. D. Via (38 shared papers)Gregg H. Jessen (27 shared papers)Manuel Trejo (15 shared papers)Kelson D. Chabak (21 shared papers)Dennis E. Walker (20 shared papers)S. J. Pearton (26 shared papers)
Journals: IEEE Electron Device Letters (12 papers)Applied Physics Letters (10 papers)Solid-State Electronics (10 papers)Journal of The Electrochemical Society (3 papers)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (3 papers)
Partner nations: United States United Kingdom Japan

In The Last Decade

J. Gillespie

71 papers receiving 1.6k citations

Peers

Countries citing papers authored by J. Gillespie

Since Specialization

Citations

This map shows the geographic impact of J. Gillespie's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Gillespie with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Gillespie more than expected).

Fields of papers citing papers by J. Gillespie

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Gillespie. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Gillespie. The network helps show where J. Gillespie may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Gillespie, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Gillespie Line = papers co-authored together J. Gillespie links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 79 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices IEEE Transactions on Electron Devices ·Gregg H. Jessen, Robert Fitch, J. Gillespie, G. D. Via, Antonio Crespo, Derrick Langley, Daniel J. Denninghoff, Manuel Trejo, Eric R. Heller	2007	272
2	AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation Applied Physics Letters ·R. Mehandru, B. Luo, J. Kim, F. Ren, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo	2003	116
3	ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance IEEE Electron Device Letters ·Andrew J. Green, J. Gillespie, Robert Fitch, Dennis E. Walker, Miles Lindquist, Antonio Crespo, Dan Brooks, Edward Beam, Andy Xie, V. Kumar, J. L. Jiménez, Cathy Lee, Yu Cao, Kelson D. Chabak, Gregg H. Jessen	2019	105
4	High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier IEEE Electron Device Letters ·Antonio Crespo, Mark Bellot, Kelson D. Chabak, J. Gillespie, Gregg H. Jessen, V. Miller, Manuel Trejo, G. D. Via, Dennis E. Walker, B. Winningham, H. E. SMITH, Tim Cooper, Xiaoqin Gao, Shiping Guo	2009	89
5	Wet Chemical Digital Etching of GaAs at Room Temperature Journal of The Electrochemical Society ·G. DeSalvo, C. Bozada, J. Ebel, D. C. Look, J. Barrette, Charles Cerny, R. Dettmer, J. Gillespie, C. Havasy, (unknown), K. Nakano, C. Pettiford, T. Quach, J. Sewell, G. D. Via	1996	67
6	RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band IEEE Electron Device Letters ·Andrew J. Green, Neil Moser, Nicholas C. Miller, Kyle J. Liddy, Miles Lindquist, Michael Elliot, J. Gillespie, Robert Fitch, Ryan Gilbert, Dennis E. Walker, Elizabeth Werner, Antonio Crespo, Edward Beam, Andy Xie, Cathy Lee, Yu Cao, Kelson D. Chabak	2020	64
7	Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates IEEE Electron Device Letters ·Kelson D. Chabak, J. Gillespie, V. Miller, Antonio Crespo, J.A. Roussos, Manuel Trejo, Dennis E. Walker, G. D. Via, Gregg H. Jessen, J. Wasserbauer, Firooz Faili, D.I. Babic, Daniel Francis, Felix Ejeckam	2009	54
8	Implementation of High-Power-Density <inline-formula> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula>-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process IEEE Electron Device Letters ·Robert Fitch, Dennis E. Walker, Andrew J. Green, Stephen E. Tetlak, J. Gillespie, Ryan Gilbert, K. Sutherlin, William Gouty, James P. Theimer, G. D. Via, Kelson D. Chabak, Gregg H. Jessen	2015	53
9	AlGaN/GaN HEMT on Diamond Technology Demonstration Gregg H. Jessen, J. Gillespie, G. D. Via, Antonio Crespo, (unknown), J. Wasserbauer, Firooz Faili, Daniel Francis, D.I. Babic, Felix Ejeckam, Shiping Guo, I. Eliashevich	2006	49
10	Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates IEEE Electron Device Letters ·N. Killat, (unknown), James W. Pomeroy, T. Paskova, K. R. Evans, Jacob H. Leach, X. Li, (unknown), H. Morkoç̌, Kelson D. Chabak, Antonio Crespo, J. Gillespie, Robert Fitch, Mauricio Kossler, Dennis E. Walker, Manuel Trejo, G. D. Via, J. D. Blevins, Martin Kuball	2012	48
11	Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors Applied Physics Letters ·Hung-Ta Wang, B. S. Kang, F. Ren, Robert Fitch, J. Gillespie, Neil Moser, Gregg H. Jessen, T. Jenkins, R. Dettmer, D. Via, A. Crespo, (unknown), C. R. Abernathy, S. J. Pearton	2005	43
12	Effects of Sc₂O₃ and MgO passivation layers on the output power of AlGaN/GaN HEMTs IEEE Electron Device Letters ·J. Gillespie, Robert Fitch, J. Sewell, R. Dettmer, G. D. Via, A. Crespo, T. Jenkins, B. Luo, R. Mehandru, J. Kim, F. Ren, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton	2002	40
13	Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors Journal of The Electrochemical Society ·B. Luo, R. Mehandru, J. Kim, F. Ren, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, Yoshihiro Irokawa	2002	38
14	Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization Applied Physics Letters ·B. Luo, F. Ren, Robert Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, Albert G. Baca, R. D. Briggs, D. Gotthold, R. Birkhahn, B. Peres, S. J. Pearton	2003	35
15	Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors Applied Physics Letters ·B. Luo, Jihyun Kim, F. Ren, J. Gillespie, Robert Fitch, J. Sewell, R. Dettmer, G. D. Via, Antonio Crespo, T. Jenkins, (unknown), A. H. Onstine, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins	2003	33
16	High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator IEEE Electron Device Letters ·Kelson D. Chabak, Dennis E. Walker, Michael R. Johnson, Antonio Crespo, A. M. Dabiran, David J. Smith, A. M. Wowchak, Stephen K. Tetlak, Mauricio Kossler, J. Gillespie, Robert Fitch, Manuel Trejo	2011	32
17	Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Lu Liu, Chien-Fong Lo, Yuyin Xi, Yuxi Wang, F. Ren, S. J. Pearton, Hong-Yeol Kim, Jihyun Kim, Robert Fitch, Dennis E. Walker, Kelson D. Chabak, J. Gillespie, Stephen E. Tetlak, G. D. Via, Antonio Crespo, Ivan I. Kravchenko	2013	30
18	Wafer‐scale GaN HEMT performance enhancement by diamond substrate integration Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·G. D. Via, Jonathan Felbinger, J. D. Blevins, Kelson D. Chabak, Gregg H. Jessen, J. Gillespie, Robert Fitch, Antonio Crespo, K. Sutherlin, Brian Poling, Stephen E. Tetlak, Ryan Gilbert, Tim Cooper, Roland Baranyai, James W. Pomeroy, M. Kuball, Joseph Maurer, Avram Bar‐Cohen	2014	29
19	Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors Solid-State Electronics ·B. Luo, F. Ren, K. K. Allums, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins, Robert Fitch, J. Gillespie, T. Jenkins, R. Dettmer, J. Sewell, G. D. Via, Antonio Crespo, Albert G. Baca, R. J. Shul	2003	28
20	Effective Suppression of IV Knee Walk-Out in AlGaN/GaN HEMTs for Pulsed-IV Pulsed-RF With a Large Signal Network Analyzer IEEE Microwave and Wireless Components Letters ·Seok Joo Doo, Patrick Roblin, Gregg H. Jessen, Robert Fitch, J. Gillespie, Neil Moser, Antonio Crespo, Gary Simpson, J.P. King	2006	27

About J. Gillespie

J. Gillespie is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials and Atomic and Molecular Physics, and Optics, having authored 79 papers that have together received 1.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (58 papers), Semiconductor materials and devices (34 papers), Ga2O3 and related materials (25 papers), Radio Frequency Integrated Circuit Design (21 papers), Silicon Carbide Semiconductor Technologies (13 papers), Metal and Thin Film Mechanics (11 papers), Semiconductor Quantum Structures and Devices (9 papers) and Acoustic Wave Resonator Technologies (8 papers). The work is most often cited by research in Condensed Matter Physics (1.4k citations), Electronic, Optical and Magnetic Materials (586 citations), Electrical and Electronic Engineering (1.3k citations), Atomic and Molecular Physics, and Optics (327 citations) and Mechanics of Materials (250 citations). J. Gillespie has collaborated with scholars based in United States, United Kingdom and Japan. Frequent co-authors include Robert Fitch, Antonio Crespo, G. D. Via, Gregg H. Jessen, Manuel Trejo, Kelson D. Chabak, Dennis E. Walker, S. J. Pearton, F. Ren and T. Jenkins. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Solid-State Electronics, Journal of The Electrochemical Society and Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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