Patrick Fay

9.2k citations

326 papers · 5.9k · h-index 39

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 0.5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radio Frequency Integrated Circuit Design
- Silicon Carbide Semiconductor Technologies

Papers in

Electrical and Electronic Engineering 287
- Semiconductor materials and devices 93
- Radio Frequency Integrated Circuit Design 56
- Advancements in Semiconductor Devices and Circuit Design 52
- Terahertz technology and applications 47
- Photonic and Optical Devices 46
- Microwave Engineering and Waveguides 43
Atomic and Molecular Physics, and Optics 115
- Semiconductor Quantum Structures and Devices 93

Co-authors: Huili Grace Xing (62 shared papers)Debdeep Jena (44 shared papers)Xiang Gao (15 shared papers)I. Adesida (40 shared papers)Gregory L. Snider (23 shared papers)Ronghua Wang (17 shared papers)Shiping Guo (10 shared papers)Yu Cao (23 shared papers)
Journals: IEEE Electron Device Letters (36 papers)Applied Physics Letters (22 papers)Electronics Letters (16 papers)IEEE Transactions on Electron Devices (12 papers)IEEE Photonics Technology Letters (10 papers)
Partner nations: United States Chile France

In The Last Decade

Patrick Fay

313 papers receiving 5.7k citations

Peers

Countries citing papers authored by Patrick Fay

Since Specialization

Citations

This map shows the geographic impact of Patrick Fay's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Patrick Fay with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Patrick Fay more than expected).

Fields of papers citing papers by Patrick Fay

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Patrick Fay. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Patrick Fay. The network helps show where Patrick Fay may publish in the future.

Co-authors

The 25 scholars most cited alongside Patrick Fay, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Patrick Fay Line = papers co-authored together Patrick Fay links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 326 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz IEEE Electron Device Letters ·Yuanzheng Yue, Zongyang Hu, Jia Guo, Berardi Sensale‐Rodriguez, Guowang Li, Ronghua Wang, Faiza Faria, Tian Fang, Bo Song, Xiang Gao, Shiping Guo, Thomas Kosel, Gregory L. Snider, Patrick Fay, Debdeep Jena, Huili Grace Xing	2012	288
2	300-GHz InAlN/GaN HEMTs With InGaN Back Barrier IEEE Electron Device Letters ·Dong Seup Lee, Xiang Gao, Shiping Guo, David Kopp, Patrick Fay, Tomás Palacios	2011	223
3	AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance IEEE Electron Device Letters ·Tom Zimmermann, David A. Deen, Yu Cao, John Simon, Patrick Fay, Debdeep Jena, Huili Grace Xing	2008	144
4	Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance IEEE Electron Device Letters ·Ronghua Wang, P. Saunier, Xiu Xing, Chuanxin Lian, Xiang Gao, Shiping Guo, Gregory L. Snider, Patrick Fay, Debdeep Jena, Huili Grace Xing	2010	143
5	245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment IEEE Electron Device Letters ·Dong Seup Lee, Jinwook Chung, Han Wang, Xiang Gao, Shiping Guo, Patrick Fay, Tomás Palacios	2011	134
6	AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V IEEE Electron Device Letters ·Rui Li, Yeqing Lu, Guangle Zhou, Qingmin Liu, Soo Doo Chae, T. Vasen, Wan Sik Hwang, Qin Zhang, Patrick Fay, Tom Kosel, Mark A. Wistey, Huili Grace Xing, Alan Seabaugh	2012	114
7	Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures Physical Review Letters ·John Simon, Ze Zhang, Kevin Goodman, Huili Grace Xing, Thomas Kosel, Patrick Fay, Debdeep Jena	2009	109
8	Novel gate-recessed vertical InAs/GaSb TFETs with record high I<inf>ON</inf> of 180 μA/μm at V<inf>DS</inf> = 0.5 V Guangle Zhou, R. Li, T. Vasen, Meng Qi, Seung‐Hoon Chae, Yeqing Lu, Q. Zhang, Hongqiang Zhu, J. M. Kuo, T. Kosel, Mark A. Wistey, Patrick Fay, Alan Seabaugh, Huili Grace Xing	2012	102
9	Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned IEEE Electron Device Letters ·Yeqing Lu, Guangle Zhou, Rui Li, Qingmin Liu, Qin Zhang, T. Vasen, Soo Doo Chae, Thomas Kosel, Mark A. Wistey, Huili Grace Xing, Alan Seabaugh, Patrick Fay	2012	101
10	Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates Applied Physics Letters ·Lina Cao, Jingshan Wang, Galen Harden, Hansheng Ye, Roy A. Stillwell, Anthony J. Hoffman, Patrick Fay	2018	95
11	Gate-recessed integrated E/D GaN HEMT technology with f_T/f_max >300 GHz IEEE Electron Device Letters ·Michael L. Schuette, A. Ketterson, Bo Song, Edward Beam, Tso-Min Chou, Manyam Pilla, Hua-Quen Tserng, Xiang Gao, Shiping Guo, Patrick Fay, Huili Grace Xing, P. Saunier	2013	93
12	210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation IEEE Electron Device Letters ·Ronghua Wang, Guowang Li, Oleg Laboutin, Yu Cao, Wayne Johnson, Gregory L. Snider, Patrick Fay, Debdeep Jena, Huili Grace Xing	2011	89
13	Thermal infrared detection using dipole antenna-coupled metal-oxide-metal diodes Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Jeffrey A. Bean, Badri Tiwari, Gary H. Bernstein, Patrick Fay, Wolfgang Porod	2009	88
14	Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz Japanese Journal of Applied Physics ·Yuanzheng Yue, Zongyang Hu, Jia Guo, Berardi Sensale‐Rodriguez, Guowang Li, Ronghua Wang, Faiza Faria, Bo Song, Xiang Gao, Shiping Guo, Thomas Kosel, Gregory L. Snider, Patrick Fay, Debdeep Jena, Huili Grace Xing	2013	80
15	High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination Applied Physics Letters ·Jingshan Wang, Lina Cao, Jinqiao Xie, Edward Beam, Robert McCarthy, C. Youtsey, Patrick Fay	2018	80
16	Breaking the Efficiency Barrier for Ambient Microwave Power Harvesting With Heterojunction Backward Tunnel Diodes IEEE Transactions on Microwave Theory and Techniques ·Carlos H. P. Lorenz, Simon Hemour, Wenjun Li, Yaqin Xie, Jules Gauthier, Patrick Fay, Ke Wu	2015	77
17	Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design physica status solidi (a) ·Debdeep Jena, John Simon, Albert Wang, Yu Cao, Kevin Goodman, Jai Verma, Satyaki Ganguly, Guowang Li, Kamal Karda, Vladimir Protasenko, Chuanxin Lian, Thomas Kosel, Patrick Fay, Huili Xing	2011	76
18	InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$ IEEE Electron Device Letters ·Guangle Zhou, Yeqing Lu, Rui Li, Qin Zhang, Qingmin Liu, T. Vasen, Haijun Zhu, J. M. Kuo, Tom Kosel, Mark A. Wistey, Patrick Fay, Alan Seabaugh, Huili Grace Xing	2012	75
19	220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs IEEE Electron Device Letters ·Ronghua Wang, Guowang Li, Jai Verma, Berardi Sensale‐Rodriguez, Fang Tian, Jia Guo, Zongyang Hu, Oleg Laboutin, Yu Cao, Wayne Johnson, Gregory L. Snider, Patrick Fay, Debdeep Jena, Huili Grace Xing	2011	70
20	Sub-Micron Area Heterojunction Backward Diode Millimeter-Wave Detectors With 0.18 ${\rm pW/Hz}^{1/2}$ Noise Equivalent Power IEEE Microwave and Wireless Components Letters ·Ze Zhang, R. Rajavel, Peter W. Deelman, Patrick Fay	2011	69

About Patrick Fay

Patrick Fay is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Biomedical Engineering and Electronic, Optical and Magnetic Materials, having authored 326 papers that have together received 5.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (108 papers), Semiconductor Quantum Structures and Devices (93 papers), Semiconductor materials and devices (93 papers), Radio Frequency Integrated Circuit Design (56 papers), Advancements in Semiconductor Devices and Circuit Design (52 papers), Terahertz technology and applications (47 papers), Photonic and Optical Devices (46 papers) and Microwave Engineering and Waveguides (43 papers). The work is most often cited by research in Condensed Matter Physics (2.9k citations), Electrical and Electronic Engineering (4.6k citations), Electronic, Optical and Magnetic Materials (1.4k citations), Atomic and Molecular Physics, and Optics (1.7k citations) and Biomedical Engineering (973 citations). Patrick Fay has collaborated with scholars based in United States, Chile and France. Frequent co-authors include Huili Grace Xing, Debdeep Jena, Xiang Gao, I. Adesida, Gregory L. Snider, Ronghua Wang, Shiping Guo, Yu Cao, Alan Seabaugh and Guowang Li. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Electronics Letters, IEEE Transactions on Electron Devices and IEEE Photonics Technology Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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