Patrick Fay

9.3k citations

341 papers · 7.7k · 2 hit papers · h-index 42

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 0.5%
- Advancements in Semiconductor Devices and Circuit Design
- Terahertz technology and applications
- Semiconductor materials and devices
- Advanced Semiconductor Detectors and Materials
- Ferroelectric and Negative Capacitance Devices

Papers in

Condensed Matter Physics 110
- GaN-based semiconductor devices and materials 110
Electrical and Electronic Engineering 215
- Advancements in Semiconductor Devices and Circuit Design 58
- Advanced Semiconductor Detectors and Materials 44
- Terahertz technology and applications 31
- Microwave Engineering and Waveguides 28
- Semiconductor Lasers and Optical Devices 26
- Radio Frequency Integrated Circuit Design 23

Co-authors: Huili Grace Xing (62 shared papers)Debdeep Jena (45 shared papers)Xiang Gao (15 shared papers)I. Adesida (41 shared papers)Gregory L. Snider (24 shared papers)Ronghua Wang (17 shared papers)Shiping Guo (10 shared papers)Yu Cao (23 shared papers)
Journals: IEEE Electron Device Letters (37 papers)Applied Physics Letters (22 papers)Electronics Letters (16 papers)IEEE Transactions on Electron Devices (12 papers)IEEE Photonics Technology Letters (10 papers)
Partner nations: United States France Chile

In The Last Decade

Patrick Fay

331 papers receiving 7.5k citations

Patrick Fay's Hit Papers

align trajectories log scale

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors 2022 · 290 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2022 Nature
2018 Journal of Physics D Applied Physics

Peers

Countries citing papers authored by Patrick Fay

Since Specialization

Citations

This map shows the geographic impact of Patrick Fay's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Patrick Fay with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Patrick Fay more than expected).

Fields of papers citing papers by Patrick Fay

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Patrick Fay. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Patrick Fay. The network helps show where Patrick Fay may publish in the future.

Co-authors

The 25 scholars most cited alongside Patrick Fay, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Patrick Fay Line = papers co-authored together Patrick Fay links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 341 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	The 2018 GaN power electronics roadmap Journal of Physics D Applied Physics ·Hiroshi Amano, Yannick Baines, Edward Beam, Matteo Borga, Thierry Bouchet, Paul Raymond Chalker, Matthew Charles, Kevin Jing Chen Hit paper breakdown →	2018	1105
2	InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz IEEE Electron Device Letters ·Jia Guo, Berardi Sensale‐Rodriguez, Guowang Li, Ronghua Wang, Faiza Faria, Tian Fang, Bo Song, Xiang Gao	2012	305
3	Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors Nature ·Suraj Cheema, Nirmaan Shanker, Li‐Chen Wang, Cheng‐Hsiang Hsu, Shang‐Lin Hsu, Yu-Hung Liao, Matthew San Jose, Jorge Tomás Gómez Mir Hit paper breakdown →	2022	290
4	300-GHz InAlN/GaN HEMTs With InGaN Back Barrier IEEE Electron Device Letters ·Dong Seup Lee, Xiang Gao, Shiping Guo, David Kopp, Patrick Fay, Tomás Palacios	2011	233
5	AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance IEEE Electron Device Letters ·Tom Zimmermann, David A. Deen, Yu Cao, John Simon, Patrick Fay, Debdeep Jena, Huili Grace Xing	2008	157
6	Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance IEEE Electron Device Letters ·Ronghua Wang, P. Saunier, Xiu Xing, Chuanxin Lian, Xiang Gao, Shiping Guo, Gregory L. Snider, Patrick Fay	2010	149
7	245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment IEEE Electron Device Letters ·Dong Seup Lee, Jinwook Chung, Han Wang, Xiang Gao, Shiping Guo, Patrick Fay, Tomás Palacios	2011	138
8	Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures Physical Review Letters ·John Simon, Ze Zhang, Kevin Goodman, Huili Grace Xing, Thomas Kosel, Patrick Fay, Debdeep Jena	2009	121
9	AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V IEEE Electron Device Letters ·Yeqing Lu, Guangle Zhou, Soo Doo Chae, T. Vasen, Wan Sik Hwang, Qin Zhang, Patrick Fay, Tom Kosel	2012	121
10	Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned IEEE Electron Device Letters ·Yeqing Lu, Guangle Zhou, Qingmin Liu, Qin Zhang, T. Vasen, Soo Doo Chae, Thomas Kosel, Mark A. Wistey	2012	109
11	Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V Technical digest - International Electron Devices Meeting/Technical digest ·Guangle Zhou, Ruoxuan Li, T. Vasen, Meng Qi, Yeqing Lu, Q. Zhang, Hongqiang Zhu, J. M. Kuo	2012	106
12	Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates Applied Physics Letters ·Lina Cao, Jingshan Wang, Galen H. Harden, Hansheng Ye, Roy A. Stillwell, Anthony J. Hoffman, Patrick Fay	2018	103
13	Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz IEEE Electron Device Letters ·Michael L. Schuette, A. Ketterson, Bo Song, Edward Beam, Tso-Min Chou, Manyam Pilla, Hua Quen Tserng, Xiang Gao	2013	97
14	Thermal infrared detection using dipole antenna-coupled metal-oxide-metal diodes Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Jeffrey A. Bean, Badri Tiwari, Gary H. Bernstein, Patrick Fay, Wolfgang Porod Y	2009	95
15	210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation IEEE Electron Device Letters ·Ronghua Wang, Guowang Li, Oleg A. Laboutin, Yu Cao, Wayne J. Johnson, Gregory L. Snider, Patrick Fay, Debdeep Jena	2011	94
16	Breaking the Efficiency Barrier for Ambient Microwave Power Harvesting With Heterojunction Backward Tunnel Diodes IEEE Transactions on Microwave Theory and Techniques ·Carlos H. P. Lorenz, Simon Hemour, Wenjun Li, Yaqin Xie, Jules Gauthier, Patrick Fay, Ke Wu	2015	87
17	High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination Applied Physics Letters ·Jingshan Wang, Lina Cao, Jinqiao Xie, Edward Beam, Robert F. McCarthy, Chris Youtsey, Patrick Fay	2018	85
18	InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$ IEEE Electron Device Letters ·Guangle Zhou, Yeqing Lu, Qin Zhang, T. Vasen, Haijun Zhu, J. M. Kuo, Tom Kosel, Mark A. Wistey	2012	84
19	Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz Japanese Journal of Applied Physics ·Yuanzheng Yue, Jia Guo, Berardi Sensale‐Rodriguez, Guowang Li, Ronghua Wang, Faiza Faria, Bo Song, Xiang Gao	2013	83
20	Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design physica status solidi (a) ·Debdeep Jena, John Simon, Albert Wang, Yu Cao, Kevin Goodman, Jai Kishan Verma, Satyaki Ganguly, Guowang Li	2011	76

About Patrick Fay

Patrick Fay is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Astronomy and Astrophysics, Atomic and Molecular Physics, and Optics and Aerospace Engineering, having authored 341 papers that have together received 7.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (110 papers), Advancements in Semiconductor Devices and Circuit Design (58 papers), Advanced Semiconductor Detectors and Materials (44 papers), Superconducting and THz Device Technology (33 papers), Terahertz technology and applications (31 papers), Microwave Engineering and Waveguides (28 papers), Semiconductor Lasers and Optical Devices (26 papers) and Radio Frequency Integrated Circuit Design (23 papers). The work is most often cited by research in Condensed Matter Physics (4k citations), Electrical and Electronic Engineering (3.3k citations), Atomic and Molecular Physics, and Optics (492 citations), Astronomy and Astrophysics (293 citations) and Electronic, Optical and Magnetic Materials (153 citations). Patrick Fay has collaborated with scholars based in United States, France and Chile. Frequent co-authors include Huili Grace Xing, Debdeep Jena, Xiang Gao, I. Adesida, Gregory L. Snider, Ronghua Wang, Shiping Guo, Yu Cao, Alan Seabaugh and Gary H. Bernstein. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Electronics Letters, IEEE Transactions on Electron Devices and IEEE Photonics Technology Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Patrick Fay's Hit Papers

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About Patrick Fay

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