Yuji Ando

2.7k citations

125 papers · 2.1k · 1 hit paper · h-index 24

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design

Papers in

Electrical and Electronic Engineering 99
- Semiconductor materials and devices 35
- Radio Frequency Integrated Circuit Design 34
- Silicon Carbide Semiconductor Technologies 25
- Advancements in Semiconductor Devices and Circuit Design 22
Condensed Matter Physics 76
- GaN-based semiconductor devices and materials 76

Co-authors: Tomohiro Itoh (3 shared papers)Yasuhiro Okamoto (34 shared papers)Hiroyuki Miyamoto (28 shared papers)Tatsuo Nakayama (38 shared papers)Masaaki Kuzuhara (24 shared papers)Takafumi Inoue (18 shared papers)Tetsuji Itoh (4 shared papers)Akio Wakejima (36 shared papers)
Journals: IEEE Transactions on Electron Devices (19 papers)Electronics Letters (14 papers)Japanese Journal of Applied Physics (7 papers)Applied Physics Express (6 papers)Tribology Letters (6 papers)
Partner nations: Japan United States France

In The Last Decade

Yuji Ando

118 papers receiving 2.0k citations

Yuji Ando's Hit Papers

align trajectories log scale

Calculation of transmission tunneling current across arbitrary potential barriers 1987 · 384 citations

Peers

Countries citing papers authored by Yuji Ando

Since Specialization

Citations

This map shows the geographic impact of Yuji Ando's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yuji Ando with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yuji Ando more than expected).

Fields of papers citing papers by Yuji Ando

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yuji Ando. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yuji Ando. The network helps show where Yuji Ando may publish in the future.

Co-authors

The 25 scholars most cited alongside Yuji Ando, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Yuji Ando Line = papers co-authored together Yuji Ando links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 125 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Calculation of transmission tunneling current across arbitrary potential barriers Journal of Applied Physics ·Yuji Ando, Tomohiro Itoh Hit paper breakdown →	1987	384
2	10-W/mm AlGaN-GaN HFET with a field modulating plate IEEE Electron Device Letters ·Yuji Ando, Yasuhiro Okamoto, Hiroyuki Miyamoto, Tatsuo Nakayama, Takafumi Inoue, Masaaki Kuzuhara	2003	225
3	Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate IEEE Transactions on Microwave Theory and Techniques ·Yasuhiro Okamoto, Yuji Ando, K. Hataya, Tatsuo Nakayama, Hiroyuki Miyamoto, Takafumi Inoue, M. Senda, Koji Hirata, Masayoshi Kosaki, Naoki Shibata, Masaaki Kuzuhara	2004	89
4	A normally-off GaN FET with high threshold voltage uniformity using a novel piezo neutralization technique K. Ota, Kazuhiko Endo, Yasuhiro Okamoto, Yuji Ando, Hiroyuki Miyamoto, H. Shimawaki	2009	78
5	Effects of postmetallization annealing on interface properties of Al₂O₃/GaN structures Applied Physics Express ·Tamotsu Hashizume, Shota Kaneki, Tatsuya Oyobiki, Yuji Ando, Shota Sasaki, Kenya Nishiguchi	2018	73
6	High-Power Recessed-Gate AlGaN–GaN HFET With a Field-Modulating Plate IEEE Transactions on Electron Devices ·Yasuhiro Okamoto, Yuji Ando, Tatsuo Nakayama, K. Hataya, Hiroyuki Miyamoto, Takafumi Inoue, M. Senda, Koji Hirata, Masayoshi Kosaki, Naoki Shibata, Masaaki Kuzuhara	2004	54
7	Improved operation stability of Al₂O₃/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates Applied Physics Express ·Yuji Ando, Shota Kaneki, Tamotsu Hashizume	2019	48
8	30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs IEEE Transactions on Microwave Theory and Techniques ·Takafumi Inoue, Yuji Ando, Hiroyuki Miyamoto, Tatsuo Nakayama, Yasuhiro Okamoto, K. Hataya, Masaaki Kuzuhara	2005	47
9	Analysis of charge control in pseudomorphic two-dimensional electron gas field-effect transistors IEEE Transactions on Electron Devices ·Yuji Ando, Tetsuji Itoh	1988	41
10	Development of three-dimensional electrostatic stages for scanning probe microscope Sensors and Actuators A Physical ·Yuji Ando	2004	39
11	DC, small-signal, and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristics IEEE Transactions on Electron Devices ·Yuji Ando, Tetsuji Itoh	1990	37
12	A 110-W AlGaN/GaN heterojunction FET on thinned sapphire substrate Yuji Ando, Yasuhiro Okamoto, Hiroyuki Miyamoto, N. Hayama, Tatsuo Nakayama, Kenji Kasahara, Masaaki Kuzuhara	2002	34
13	New Resonant Tunneling Diode with a Deep Quantum-Well Japanese Journal of Applied Physics ·Hideo Toyoshima, Yuji Ando, Akihiko Okamoto, Tomohiro Itoh	1986	33
14	100 W C-band single-chip GaN FET power amplifier Electronics Letters ·Yasuhiro Okamoto, Akio Wakejima, Yuji Ando, Tatsuo Nakayama, K. Matsunaga, Hiroyuki Miyamoto	2006	33
15	T-Shaped Gate GaN HFETs on Si With Improved Breakdown Voltage and <inline-formula> <tex-math notation="TeX">$f_{\rm MAX}$ </tex-math></inline-formula> IEEE Electron Device Letters ·Yasuhiro Murase, Kazunori Asano, I. Takenaka, Yuji Ando, H. Takahashi, Chiaki Sasaoka	2014	33
16	Ka-band 2.3W power AlGaN/GaN heterojunction FET K. Kasahara, Hiroyuki Miyamoto, Yuji Ando, Yasuhiro Okamoto, Tatsuo Nakayama, Masaaki Kuzuhara	2003	30
17	Polarization Engineering on Buffer Layer in GaN-Based Heterojunction FETs IEEE Transactions on Electron Devices ·Takashi Inoue, Tatsuo Nakayama, Yuji Ando, Masayoshi Kosaki, Hiroshi Miwa, Koji Hirata, Toshiya Uemura, Hironobu Miyamoto	2008	30
18	Analysis of electric field distribution in GaAs metal–semiconductor field effect transistor with a field-modulating plate Journal of Applied Physics ·Y. Hori, Masaaki Kuzuhara, Yuji Ando, M. Mizuta	2000	27
19	High-Efficiency and High-Power Microwave Amplifier Using GaN-on-Si FET With Improved High-Temperature Operation Characteristics IEEE Transactions on Microwave Theory and Techniques ·I. Takenaka, Kohji Ishikura, Kazunori Asano, Shinnosuke Takahashi, Yasuhiro Murase, Yuji Ando, H. Takahashi, Chiaki Sasaoka	2014	27
20	Low-contact-resistance and smooth-surface Ti∕Al∕Nb∕Au ohmic electrode on AlGaN∕GaN heterostructure Applied Physics Letters ·Tatsuo Nakayama, Hiroyuki Miyamoto, Yuji Ando, Yasuhiro Okamoto, Takafumi Inoue, K. Hataya, Masaaki Kuzuhara	2004	26

About Yuji Ando

Yuji Ando is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 125 papers that have together received 2.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (76 papers), Semiconductor materials and devices (35 papers), Radio Frequency Integrated Circuit Design (34 papers), Semiconductor Quantum Structures and Devices (26 papers), Silicon Carbide Semiconductor Technologies (25 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers), Ga2O3 and related materials (18 papers) and ZnO doping and properties (12 papers). The work is most often cited by research in Condensed Matter Physics (1.3k citations), Electrical and Electronic Engineering (1.6k citations), Electronic, Optical and Magnetic Materials (507 citations), Atomic and Molecular Physics, and Optics (764 citations) and Materials Chemistry (361 citations). Yuji Ando has collaborated with scholars based in Japan, United States and France. Frequent co-authors include Tomohiro Itoh, Yasuhiro Okamoto, Hiroyuki Miyamoto, Tatsuo Nakayama, Masaaki Kuzuhara, Takafumi Inoue, Tetsuji Itoh, Akio Wakejima, K. Hataya and Tamotsu Hashizume. Their work appears in journals such as IEEE Transactions on Electron Devices, Electronics Letters, Japanese Journal of Applied Physics, Applied Physics Express and Tribology Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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