Neil Moser

1.5k citations

42 papers · 1.2k · h-index 16

Impact in

Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials
Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials

Papers in

Electronic, Optical and Magnetic Materials 27
- Ga2O3 and related materials 27
Electrical and Electronic Engineering 26
- Semiconductor materials and devices 18
- Radio Frequency Integrated Circuit Design 6

Co-authors: Kelson D. Chabak (22 shared papers)Gregg H. Jessen (23 shared papers)Antonio Crespo (23 shared papers)Kevin Leedy (14 shared papers)Robert Fitch (24 shared papers)Andrew J. Green (14 shared papers)Jonathan P. McCandless (6 shared papers)Dennis E. Walker (7 shared papers)
Journals: Applied Physics Letters (9 papers)IEEE Electron Device Letters (4 papers)Semiconductor Science and Technology (3 papers)IEEE Transactions on Electron Devices (2 papers)Solid-State Electronics (2 papers)
Partner nations: United States Germany

In The Last Decade

Neil Moser

42 papers receiving 1.2k citations

Peers

Countries citing papers authored by Neil Moser

Since Specialization

Citations

This map shows the geographic impact of Neil Moser's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Neil Moser with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Neil Moser more than expected).

Fields of papers citing papers by Neil Moser

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Neil Moser. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Neil Moser. The network helps show where Neil Moser may publish in the future.

Co-authors

The 25 scholars most cited alongside Neil Moser, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Neil Moser Line = papers co-authored together Neil Moser links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 42 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage Applied Physics Letters ·Kelson D. Chabak, Neil Moser, Andrew J. Green, Dennis E. Walker, Stephen E. Tetlak, Eric R. Heller, Antonio Crespo, Robert Fitch, Jonathan P. McCandless, Kevin Leedy, M. Baldini, G. Wagner, Zbigniew Galazka, Xiuling Li, Gregg H. Jessen	2016	311
2	Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition Applied Physics Letters ·Kevin Leedy, Kelson D. Chabak, Vladimir Vasilyev, D. C. Look, John Boeckl, Jeff L. Brown, Stephen E. Tetlak, Andrew J. Green, Neil Moser, Antonio Crespo, Darren B. Thomson, Robert Fitch, Jonathan P. McCandless, Gregg H. Jessen	2017	143
3	Lateral β-Ga₂O₃ field effect transistors Semiconductor Science and Technology ·Kelson D. Chabak, Kevin Leedy, Andrew J. Green, Shin Mou, Adam T. Neal, Thaddeus J. Asel, Eric R. Heller, Nolan S. Hendricks, Kyle J. Liddy, Antonio Crespo, Nicholas C. Miller, Miles Lindquist, Neil Moser, Robert Fitch, Dennis E. Walker, Donald L. Dorsey, Gregg H. Jessen	2019	101
4	High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge Applied Physics Letters ·Neil Moser, Jonathan P. McCandless, Antonio Crespo, Kevin Leedy, Andrew J. Green, Eric R. Heller, Kelson D. Chabak, Nathalia Peixoto, Gregg H. Jessen	2017	72
5	RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band IEEE Electron Device Letters ·Andrew J. Green, Neil Moser, Nicholas C. Miller, Kyle J. Liddy, Miles Lindquist, Michael Elliot, J. Gillespie, Robert Fitch, Ryan Gilbert, Dennis E. Walker, Elizabeth Werner, Antonio Crespo, Edward Beam, Andy Xie, Cathy Lee, Yu Cao, Kelson D. Chabak	2020	64
6	Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors Applied Physics Letters ·Hung-Ta Wang, B. S. Kang, F. Ren, Robert Fitch, J. Gillespie, Neil Moser, Gregg H. Jessen, T. Jenkins, R. Dettmer, D. Via, A. Crespo, (unknown), C. R. Abernathy, S. J. Pearton	2005	43
7	Thin channel β-Ga₂O₃ MOSFETs with self-aligned refractory metal gates Applied Physics Express ·Kyle J. Liddy, Andrew J. Green, Nolan S. Hendricks, Eric R. Heller, Neil Moser, Kevin Leedy, Andreas Popp, Miles Lindquist, Stephen E. Tetlak, G. Wagner, Kelson D. Chabak, Gregg H. Jessen	2019	41
8	Sub-Micron Gallium Oxide Radio Frequency Field-Effect Transistors Kelson D. Chabak, Dennis E. Walker, A.J. Green, Antonio Crespo, Miles Lindquist, Kevin Leedy, Stephen E. Tetlak, Ryan Gilbert, Neil Moser, Gregg H. Jessen	2018	41
9	Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band IEEE Electron Device Letters ·Neil Moser, Tadj Asel, Kyle J. Liddy, Miles Lindquist, Nicholas C. Miller, Shin Mou, Adam T. Neal, Dennis E. Walker, Steve Tetlak, Kevin Leedy, Gregg H. Jessen, Andrew J. Green, Kelson D. Chabak	2020	40
10	Toward high voltage radio frequency devices in β-Ga2O3 Applied Physics Letters ·Neil Moser, Kyle J. Liddy, Ahmad E. Islam, Nicholas C. Miller, Kevin Leedy, Thaddeus J. Asel, Shin Mou, Andrew Green, Kelson D. Chabak	2020	38
11	Improved oxide passivation of AlGaN∕GaN high electron mobility transistors Applied Physics Letters ·(unknown), M. Hlad, A. H. Onstine, R. M. Frazier, G. T. Thaler, Andrew M. Herrero, E. S. Lambers, C. R. Abernathy, S. J. Pearton, Travis J. Anderson, Soohwan Jang, F. Ren, Neil Moser, Robert Fitch, M. M. Freund	2005	33
12	Effective Suppression of IV Knee Walk-Out in AlGaN/GaN HEMTs for Pulsed-IV Pulsed-RF With a Large Signal Network Analyzer IEEE Microwave and Wireless Components Letters ·Seok Joo Doo, Patrick Roblin, Gregg H. Jessen, Robert Fitch, J. Gillespie, Neil Moser, Antonio Crespo, Gary Simpson, J.P. King	2006	27
13	Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors Applied Physics Letters ·B. S. Kang, R. Mehandru, S. Kim, F. Ren, Robert Fitch, J. Gillespie, Neil Moser, Gregg H. Jessen, T. Jenkins, R. Dettmer, D. Via, A. Crespo, (unknown), C. R. Abernathy, S. J. Pearton	2004	24
14	Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors Applied Physics Letters ·Robert Fitch, J. Gillespie, Neil Moser, T. Jenkins, J. Sewell, D. Via, Antonio Crespo, A. M. Dabiran, P. P. Chow, A. Osinsky, J. R. La Roche, F. Ren, S. J. Pearton	2004	22
15	Scaled T-Gate β-Ga₂O₃ MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit IEEE Electron Device Letters ·Daniel M. Dryden, Kyle J. Liddy, Ahmad E. Islam, Jeremiah C. Williams, Dennis E. Walker, Nolan S. Hendricks, Neil Moser, Andrea Arias-Purdue, Nicholas P. Sepelak, Kursti DeLello, Kelson D. Chabak, Andrew J. Green	2022	19
16	Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors Applied Physics Letters ·Neil Moser, J. Gillespie, G. D. Via, A. Crespo, Mark Yannuzzi, Gregg H. Jessen, Robert Fitch, B. Luo, F. Ren, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton	2003	16
17	High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC IEEE Electron Device Letters ·Gregg H. Jessen, Robert Fitch, J. Gillespie, G. D. Via, Neil Moser, Mark Yannuzzi, Antonio Crespo, J. Sewell, R. Dettmer, T. Jenkins, R. F. Davis, Jinwei Yang, M.A. Khan, S.C. Binari	2003	15
18	Toward realization of Ga<inf>2</inf>O<inf>3</inf> for power electronics applications Gregg H. Jessen, Kelson D. Chabak, (unknown), Jonathan P. McCandless, Steve Tetlak, Kevin Leedy, Robert Fitch, Shin Mou, Eric R. Heller, Ştefan C. Bǎdescu, Antonio Crespo, Neil Moser	2017	15
19	Defect Engineering at the Al₂O₃/(010)β-Ga₂O₃Interface via Surface Treatments and Forming Gas Post-Deposition Anneals IEEE Transactions on Electron Devices ·Ahmad E. Islam, Chenyu Zhang, Kursti DeLello, David A. Muller, Kevin Leedy, Sabyasachi Ganguli, Neil Moser, Rachel Kahler, Jeremiah C. Williams, Daniel M. Dryden, Stephen E. Tetlak, Kyle J. Liddy, Andrew J. Green, Kelson D. Chabak	2022	15
20	Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation Solid-State Electronics ·B. Luo, R. Mehandru, Jihyun Kim, F. Ren, (unknown), A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, Robert Fitch, Neil Moser, J. Gillespie, Gregg H. Jessen, T. Jenkins, M.J. Yannuzi, G. D. Via, Antonio Crespo	2003	15

About Neil Moser

Neil Moser is a scholar working on Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry and Renewable Energy, Sustainability and the Environment, having authored 42 papers that have together received 1.2k indexed citations. Recurring topics across this work include Ga2O3 and related materials (27 papers), GaN-based semiconductor devices and materials (22 papers), ZnO doping and properties (18 papers), Semiconductor materials and devices (18 papers), Electronic and Structural Properties of Oxides (10 papers), Radio Frequency Integrated Circuit Design (6 papers), Advanced Photocatalysis Techniques (5 papers) and Metal and Thin Film Mechanics (4 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (927 citations), Condensed Matter Physics (372 citations), Renewable Energy, Sustainability and the Environment (395 citations), Materials Chemistry (876 citations) and Electrical and Electronic Engineering (444 citations). Neil Moser has collaborated with scholars based in United States and Germany. Frequent co-authors include Kelson D. Chabak, Gregg H. Jessen, Antonio Crespo, Kevin Leedy, Robert Fitch, Andrew J. Green, Jonathan P. McCandless, Dennis E. Walker, Stephen E. Tetlak and Eric R. Heller. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Semiconductor Science and Technology, IEEE Transactions on Electron Devices and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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