Sergiu Clima

5.4k citations

150 papers · 3.7k · h-index 36

Impact in

Electrical and Electronic Engineering top 1%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
Materials Chemistry top 5%
- Phase-change materials and chalcogenides
- Electronic and Structural Properties of Oxides
- MXene and MAX Phase Materials

Papers in

Electrical and Electronic Engineering 133
- Advanced Memory and Neural Computing 91
- Ferroelectric and Negative Capacitance Devices 75
- Semiconductor materials and devices 66
Materials Chemistry 90
- Phase-change materials and chalcogenides 36
- Electronic and Structural Properties of Oxides 23
- Ferroelectric and Piezoelectric Materials 18

Co-authors: M. Jurczak (53 shared papers)R. Degraeve (58 shared papers)B. Govoreanu (46 shared papers)Geoffrey Pourtois (48 shared papers)A. Fantini (53 shared papers)Gouri Sankar Kar (65 shared papers)Dirk J. Wouters (30 shared papers)L. Goux (29 shared papers)
Journals: IEEE Electron Device Letters (17 papers)Applied Physics Letters (9 papers)Microelectronic Engineering (8 papers)IEEE Transactions on Electron Devices (8 papers)The Journal of Physical Chemistry A (4 papers)
Partner nations: Belgium United Kingdom United States

In The Last Decade

Sergiu Clima

148 papers receiving 3.6k citations

Peers

Countries citing papers authored by Sergiu Clima

Since Specialization

Citations

This map shows the geographic impact of Sergiu Clima's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sergiu Clima with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sergiu Clima more than expected).

Fields of papers citing papers by Sergiu Clima

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sergiu Clima. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sergiu Clima. The network helps show where Sergiu Clima may publish in the future.

Co-authors

The 25 scholars most cited alongside Sergiu Clima, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Sergiu Clima Line = papers co-authored together Sergiu Clima links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 150 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight Applied Physics Letters ·Sergiu Clima, Dirk J. Wouters, Christoph Adelmann, Tony Schenk, Uwe Schroeder, M. Jurczak, Geoffrey Pourtois	2014	208
2	Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM IEEE Transactions on Electron Devices ·Yang Yin Chen, Ludovic Goux, Sergiu Clima, B. Govoreanu, R. Degraeve, Gouri Sankar Kar, A. Fantini, G. Groeseneken, Dirk J. Wouters, M. Jurczak	2013	208
3	Causes and consequences of the stochastic aspect of filamentary RRAM Microelectronic Engineering ·R. Degraeve, A. Fantini, Nagarajan Raghavan, L. Goux, Sergiu Clima, B. Govoreanu, Attilio Belmonte, D. Linten, M. Jurczak	2015	111
4	Heterospin Systems Constructed from [Cu₂Ln]³⁺and [Ni(mnt)₂]¹^-^,2^-Tectons: First 3p−3d−4f Complexes (mnt = Maleonitriledithiolato) Inorganic Chemistry ·Augustin M. Mădălan, Narcis Avarvari, Marc Fourmigué, Rodolphe Clérac, Liviu F. Chibotaru, Sergiu Clima, Marius Andruh	2008	106
5	Improvement of data retention in HfO<inf>2</inf>/Hf 1T1R RRAM cell under low operating current Yang Yin Chen, Masanori Komura, R. Degraeve, B. Govoreanu, Ludovic Goux, A. Fantini, Nagarajan Raghavan, Sergiu Clima, Leqi Zhang, Attilio Belmonte, A. Redolfi, Gouri Sankar Kar, G. Groeseneken, Dirk J. Wouters, M. Jurczak	2013	85
6	First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism Applied Physics Letters ·Sergiu Clima, Y. Y. Chen, R. Degraeve, Maarten Mees, Kiroubanand Sankaran, B. Govoreanu, M. Jurczak, Stefan De Gendt, Geoffrey Pourtois	2012	84
7	Understanding of the endurance failure in scaled HfO<inf>2</inf>-based 1T1R RRAM through vacancy mobility degradation Yang Yin Chen, R. Degraeve, Sergiu Clima, B. Govoreanu, Ludovic Goux, A. Fantini, Gouri Sankar Kar, Geoffrey Pourtois, G. Groeseneken, Dirk J. Wouters, M. Jurczak	2012	70
8	Dynamic ‘hour glass’ model for SET and RESET in HfO<inf>2</inf> RRAM R. Degraeve, A. Fantini, Sergiu Clima, B. Govoreanu, L. Goux, Y.Y. Chen, Dirk J. Wouters, Ph. Roussel, Gouri Sankar Kar, Geoffrey Pourtois, Stefan Cosemans, J. A. Kittl, G. Groeseneken, M. Jurczak, L. Altimime	2012	69
9	Ovonic Threshold‐Switching Ge_xSe_y Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles physica status solidi (RRL) - Rapid Research Letters ·Sergiu Clima, Daniele Garbin, Karl Opsomer, Naga Sruti Avasarala, Wouter Devulder, I. Shlyakhov, Jonas Keukelier, Gabriele Luca Donadio, T. Witters, Shreya Kundu, B. Govoreanu, Ludovic Goux, Christophe Detavernier, Valeri Afanas’ev, Gouri Sankar Kar, Geoffrey Pourtois	2020	66
10	Intrinsic program instability in HfO2 RRAM and consequences on program algorithms A. Fantini, Georgi Gorine, R. Degraeve, L. Goux, C. Y. Chen, A. Redolfi, Sergiu Clima, A. Cabrini, G. Torelli, M. Jurczak	2015	61
11	Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell B. Govoreanu, A. Redolfi, L. Zhang, Christoph Adelmann, M. Popovici, Sergiu Clima, Hubert Hody, Vasile Paraschiv, Iuliana Radu, Alexis Franquet, J.-C. Liu, Johan Swerts, Olivier Richard, H. Bender, L. Altimime, M. Jurczak	2013	60
12	Thermally stable integrated Se-based OTS selectors with >20 MA/cm² current drive, >3.10³ half-bias nonlinearity, tunable threshold voltage and excellent endurance B. Govoreanu, Gabriele Luca Donadio, Karl Opsomer, Wouter Devulder, V. V. Afanas’ev, T. Witters, Sergiu Clima, Naga Sruti Avasarala, A. Redolfi, Shreya Kundu, Olivier Richard, D. Tsvetanova, Geoffrey Pourtois, C. Detavemier, L. Goux, Gouri Sankar Kar	2017	58
13	Intrinsic Tailing of Resistive States Distributions in Amorphous HfO<sub><italic>x</italic></sub> and TaO<sub><italic>x</italic></sub> Based Resistive Random Access Memories IEEE Electron Device Letters ·Sergiu Clima, Y. Y. Chen, A. Fantini, L. Goux, R. Degraeve, B. Govoreanu, Geoffrey Pourtois, M. Jurczak	2015	52
14	Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations Applied Physics Letters ·Liang Zhao, Sergiu Clima, Blanka Magyari-Köpe, M. Jurczak, Yoshio Nishi	2015	51
15	Ultralow sub-500nA operating current high-performance TiN\Al<inf>2</inf>O<inf>3</inf>\HfO<inf>2</inf>\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering L. Goux, A. Fantini, Gouri Sankar Kar, Y.-Y. Chen, N. Jossart, R. Degraeve, Sergiu Clima, B. Govoreanu, G. Lorenzo, Geoffrey Pourtois, Dirk J. Wouters, J. A. Kittl, L. Altimime, M. Jurczak	2012	51
16	Exploring Alternative Metals to Cu and W for Interconnects Applications Using Automated First-Principles Simulations ECS Journal of Solid State Science and Technology ·Kiroubanand Sankaran, Sergiu Clima, Maarten Mees, Geoffrey Pourtois	2014	51
17	Embedding Fragment ab Initio Model Potentials in CASSCF/CASPT2 Calculations of Doped Solids: Implementation and Applications Journal of Chemical Theory and Computation ·Ben Swerts, Liviu F. Chibotaru, Roland Lindh, Luis Seijo, Zoila Barandiarán, Sergiu Clima, Kristine Pierloot, Marc Hendrickx	2008	49
18	Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory ACS Applied Materials & Interfaces ·Umberto Celano, Jonathan Op de Beeck, Sergiu Clima, Michael Luebben, P. M. Koenraad, Ludovic Goux, Ilia Valov, Wilfried Vandervorst	2017	48
19	Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current Yang Yin Chen, Masanori Komura, R. Degraeve, B. Govoreanu, Ludovic Goux, A. Fantini, Nagarajan Raghavan, Sergiu Clima, Leqi Zhang, Attilio Belmonte, A. Redolfi, Gouri Sankar Kar, G. Groeseneken, Dirk J. Wouters, M. Jurczak	2013	48
20	Composition Optimization and Device Understanding of Si-Ge-As-Te Ovonic Threshold Switch Selector with Excellent Endurance Ghent University Academic Bibliography (Ghent University) ·Daniele Garbin, Wouter Devulder, R. Degraeve, Gabriele Luca Donadio, Sergiu Clima, Karl Opsomer, A. Fantini, D. Cellier, W. G. Kim, Mahendra Pakala, Andrew Cockburn, Christophe Detavernier, Romain Delhougne, L. Goux, Gouri Sankar Kar	2019	44

About Sergiu Clima

Sergiu Clima is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Polymers and Plastics, having authored 150 papers that have together received 3.7k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (91 papers), Ferroelectric and Negative Capacitance Devices (75 papers), Semiconductor materials and devices (66 papers), Phase-change materials and chalcogenides (36 papers), Electronic and Structural Properties of Oxides (23 papers), Ferroelectric and Piezoelectric Materials (18 papers), Semiconductor materials and interfaces (11 papers) and Transition Metal Oxide Nanomaterials (11 papers). The work is most often cited by research in Electrical and Electronic Engineering (3.2k citations), Materials Chemistry (1.7k citations), Polymers and Plastics (428 citations), Cellular and Molecular Neuroscience (468 citations) and Electronic, Optical and Magnetic Materials (282 citations). Sergiu Clima has collaborated with scholars based in Belgium, United Kingdom and United States. Frequent co-authors include M. Jurczak, R. Degraeve, B. Govoreanu, Geoffrey Pourtois, A. Fantini, Gouri Sankar Kar, Dirk J. Wouters, L. Goux, Ludovic Goux and G. Groeseneken. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Microelectronic Engineering, IEEE Transactions on Electron Devices and The Journal of Physical Chemistry A.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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