Lain‐Jong Li

84.7k citations
502 papers · 68.9k · 35 hit papers · h-index 123

Impact in

    • 2D Materials and Applications
    • Graphene research and applications
    • MXene and MAX Phase Materials
    • Perovskite Materials and Applications
    • Advancements in Battery Materials
    • Chalcogenide Semiconductor Thin Films

Papers in

    • 2D Materials and Applications 233
    • Graphene research and applications 191
    • MXene and MAX Phase Materials 87
    • Carbon Nanotubes in Composites 66
    • Perovskite Materials and Applications 65
    • Advancements in Battery Materials 39
    • Chalcogenide Semiconductor Thin Films 39

Lain‐Jong Li

492 papers receiving 67.9k citations

Lain‐Jong Li's Hit Papers

Transistors based on two-dimensional materials for future integrated circuits 2021 · 714 citations
7140+4+8Years since publication50010001.5k

Peers

Lain‐Jong Li
Comparison fields: 5 of 164
  • Materials Chemistry 53.9k
  • Electrical and Electronic Engineering 34.1k
  • Renewable Energy, Sustainability and the Environment 9.2k
  • Electronic, Optical and Magnetic Materials 7.8k
  • Polymers and Plastics 3.9k
Replace Zheng Liu with:
Zheng Liu China
Mauricio Terrones United States
Kian Ping Loh Singapore
Manish Chhowalla United States
Zhongfan Liu China
Andrey L. Rogach Hong Kong
Dmitri Golberg Japan
Young Hee Lee South Korea
Mark C. Hersam United States
Yu Huang United States
Lain‐Jong Li relative to Zheng Liu China Zheng Liu's profile →
Citations per field
00.5×1.5×
Zheng Liu · 1×
Citations per year

Countries citing papers authored by Lain‐Jong Li

Since Specialization
Citations

This map shows the geographic impact of Lain‐Jong Li's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lain‐Jong Li with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lain‐Jong Li more than expected).

Fields of papers citing papers by Lain‐Jong Li

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lain‐Jong Li. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lain‐Jong Li. The network helps show where Lain‐Jong Li may publish in the future.

Co-authors

The 25 scholars most cited alongside Lain‐Jong Li, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Lain‐Jong Li Line = papers co-authored together Lain‐Jong Li links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 502 papers — load more, or switch the sort, to bring in the rest.

#Work
1
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Hit paper breakdown →
20138655
2
Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition
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20123043
3
Janus monolayers of transition metal dichalcogenides
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20171971
4
Integrated Circuits Based on Bilayer MoS2 Transistors
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20121528
5
Graphene and two-dimensional materials for silicon technology
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20191297
6
Monolayer MoS2 Heterojunction Solar Cells
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20141130
7
Synthesis of Few-Layer Hexagonal Boron Nitride Thin Film by Chemical Vapor Deposition
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20101084
8
Epitaxial growth of a monolayer WSe 2 -MoS 2 lateral p-n junction with an atomically sharp interface
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20151062
9
Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications
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2013951
10
High‐Gain Phototransistors Based on a CVD MoS2 Monolayer
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2013936
11
High-Quality Thin Graphene Films from Fast Electrochemical Exfoliation
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2011911
12
van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates
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2012896
13
Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures
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2014822
14
Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques
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2014758
15
Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
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2012752
16
Transistors based on two-dimensional materials for future integrated circuits
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2021714
17
Highly Efficient Electrocatalytic Hydrogen Production by MoSx Grown on Graphene‐Protected 3D Ni Foams
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2012712
18
Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3
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2018678
19
Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization
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2012640
20
Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments
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2013608

About Lain‐Jong Li

Lain‐Jong Li is a scholar working on Materials Chemistry, Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics and Renewable Energy, Sustainability and the Environment, having authored 502 papers that have together received 68.9k indexed citations. Recurring topics across this work include 2D Materials and Applications (233 papers), Graphene research and applications (191 papers), MXene and MAX Phase Materials (87 papers), Carbon Nanotubes in Composites (66 papers), Perovskite Materials and Applications (65 papers), Advancements in Battery Materials (39 papers), Chalcogenide Semiconductor Thin Films (39 papers) and Nanowire Synthesis and Applications (36 papers). The work is most often cited by research in Materials Chemistry (53.9k citations), Electrical and Electronic Engineering (34.1k citations), Renewable Energy, Sustainability and the Environment (9.2k citations), Electronic, Optical and Magnetic Materials (7.8k citations) and Polymers and Plastics (3.9k citations). Lain‐Jong Li has collaborated with scholars based in Taiwan, Saudi Arabia and China. Frequent co-authors include Yumeng Shi, Hua Zhang, Goki Eda, Manish Chhowalla, Hyeon Suk Shin, Kian Ping Loh, Wenjing Zhang, Chang‐Hsiao Chen, Yi‐Hsien Lee and Jing‐Kai Huang. Their work appears in journals such as ACS Nano, Advanced Materials, Nano Letters, Nature Communications and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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