Hugo Bender

11.7k citations

497 papers · 10.1k · 1 hit paper · h-index 47

Impact in

Structural Biology top 1%
Electrical and Electronic Engineering top 0.2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies

Papers in

Electrical and Electronic Engineering 401
- Semiconductor materials and devices 249
- Advancements in Semiconductor Devices and Circuit Design 105
- Integrated Circuits and Semiconductor Failure Analysis 88
- Silicon and Solar Cell Technologies 87
Atomic and Molecular Physics, and Optics 179
- Semiconductor materials and interfaces 103
- Semiconductor Quantum Structures and Devices 39

Co-authors: Wilfried Vandervorst (108 shared papers)Olivier Richard (110 shared papers)Matty R. Caymax (65 shared papers)Marc Heyns (62 shared papers)Paola Favia (71 shared papers)Roger Loo (70 shared papers)Thierry S. Conard (44 shared papers)Małgorzata Jurczak (22 shared papers)
Journals: Journal of Applied Physics (38 papers)Applied Physics Letters (26 papers)Microelectronic Engineering (19 papers)Journal of The Electrochemical Society (17 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (13 papers)
Partner nations: Belgium United States Netherlands

In The Last Decade

Hugo Bender

484 papers receiving 9.8k citations

Hugo Bender's Hit Papers

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10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation 2011 · 545 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2011 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation

Peers

Countries citing papers authored by Hugo Bender

Since Specialization

Citations

This map shows the geographic impact of Hugo Bender's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hugo Bender with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hugo Bender more than expected).

Fields of papers citing papers by Hugo Bender

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hugo Bender. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hugo Bender. The network helps show where Hugo Bender may publish in the future.

Co-authors

The 25 scholars most cited alongside Hugo Bender, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Hugo Bender Line = papers co-authored together Hugo Bender links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 497 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B. Govoreanu, Gouri Sankar Kar, YY Chen, Vasile Paraschiv, Stefan Kubicek, A. Fantini, Iuliana P. Radu, Ludovic Goux Hit paper breakdown →	2011	545
2	Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices Nano Letters ·Umberto Celano, Ludovic Goux, Attilio Belmonte, Karl Opsomer, Alexis Franquet, Andreas Schulze, Christophe Detavernier, Olivier Richard	2014	306
3	High-k dielectrics for future generation memory devices (Invited Paper) Microelectronic Engineering ·J. A. Kittl, Karl Opsomer, Mihaela Ioana Popovici, N. Menou, Ben Kaczer, X. P. Wang, Christoph Adelmann, Małgorzata Pawlak	2009	217
4	Nanometer-scale magnetic MnAs particles in GaAs grown by molecular beam epitaxy Applied Physics Letters ·R. Oesterholt, Ann Van Esch, Hugo Bender, Christophe Bruynseraede, Chris A. Van Hoof, G. Borghs +1 other	1996	207
5	Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory Nano Letters ·Umberto Celano, Ludovic Goux, Robin Degraeve, A. Fantini, Olivier Richard, Hugo Bender, Małgorzata Jurczak, Wilfried Vandervorst	2015	175
6	Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition Applied Physics Letters ·Benjamin Vincent, Federica Gencarelli, Hugo Bender, Clément Merckling, Bastien Douhard, Dirch Hjorth Petersen, Ole Per Hansen, Henrik H. Henrichsen	2011	171
7	Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates Hans W. Mertens, R. Ritzenthaler, Andriy Yakovitch Hikavyy, M. S. Kim, Kurt L. Wostyn, Soon Aik Chew, A. De Keersgieter, Geert Mannaert	2016	171
8	Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron Microscopy Physical Review Letters ·Florian Hue, Martin Hÿtch, Hugo Bender, Florent Houdellier, A. Claverie	2008	154
9	Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates Hans W. Mertens, R. Ritzenthaler, Adrian Vaisman Chasin, Tom Schram, Eddy Kunnen, Andriy Yakovitch Hikavyy, Lars-Åke Ragnarsson, Hendrik F. W. Dekkers	2016	137
10	Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy Journal of Applied Physics ·Riikka L. Puurunen, Wilfried Vandervorst, Wim F. A. Besling, Olivier Richard, Hugo Bender, Thierry S. Conard, Chao Zhao, Annelies Delabie	2004	135
11	Experimental determination of the maximum post-process annealing temperature for standard CMOS wafers IEEE Transactions on Electron Devices ·Sherif M. Sedky, Ann Witvrouw, Hugo Bender, Kris Baert	2001	128
12	Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·A. Lauwers, An Steegen, Muriel de Potter, Richard Lindsay, Alessandra Satta, Hugo Bender, Karen Maex	2001	123
13	Ternary rare-earth metal oxide high-k layers on silicon oxide Applied Physics Letters ·Chao Zhao, Thomas Witters, Bert Brijs, Hugo Bender, Olivier Richard, Matty R. Caymax, Tassilo Heeg, Jürgen Schubert	2005	119
14	Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn ECS Journal of Solid State Science and Technology ·Federica Gencarelli, Benjamin Vincent, Jelle Demeulemeester, A. Vantomme, Alain Moussa, Alexis Franquet, Aswathi Kumar, Hugo Bender	2013	108
15	Vertically stacked gate-all-around Si nanowire transistors: Key Process Optimizations and Ring Oscillator Demonstration Hans W. Mertens, R. Ritzenthaler, V. Peña, G. Santoro, Karine Kenis, Andreas Schulze, Eugenio Dentoni Litta, Soon Aik Chew	2017	104
16	Investigation of the oxygen-related lattice defects in Czochralski silicon by means of electron microscopy techniques physica status solidi (a) ·Hugo Bender	1984	101
17	Site Selective Integration of III–V Materials on Si for Nanoscale Logic and Photonic Devices Crystal Growth & Design ·Mohanchand Paladugu, Clément Merckling, Roger Loo, Olivier Richard, Hugo Bender, Johan Dekoster, Wilfried Vandervorst, Matty R. Caymax	2012	95
18	AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility Applied Physics Express ·Kai Cheng, Hu Liang, Marleen Van Hove, Karen Geens, Brice De Jaeger, Puneet Srivastava, Xuanwu Kang, Paola Favia	2011	94
19	In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines Journal of Applied Physics ·Valentin Serban Teodorescu, Leona Cristina Nistor, Hugo Bender, An Steegen, A. Lauwers, Karen Maex, Jef Van Landuyt	2001	86
20	Two-step room temperature grain growth in electroplated copper Journal of Applied Physics ·Sywert H. Brongersma, Emmanuel Richard, I. Vervoort, Hugo Bender, Wilfried Vandervorst, Sébastien Lagrange, Gerald Beyer, K. Maex	1999	82

About Hugo Bender

Hugo Bender is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Surfaces, Coatings and Films, having authored 497 papers that have together received 10.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (249 papers), Advancements in Semiconductor Devices and Circuit Design (105 papers), Semiconductor materials and interfaces (103 papers), Integrated Circuits and Semiconductor Failure Analysis (88 papers), Silicon and Solar Cell Technologies (87 papers), Copper Interconnects and Reliability (54 papers), Nanowire Synthesis and Applications (52 papers) and Semiconductor Quantum Structures and Devices (39 papers). The work is most often cited by research in Structural Biology (237 citations), Electrical and Electronic Engineering (8.2k citations), Atomic and Molecular Physics, and Optics (2.7k citations), Materials Chemistry (3.4k citations) and Electronic, Optical and Magnetic Materials (1.0k citations). Hugo Bender has collaborated with scholars based in Belgium, United States and Netherlands. Frequent co-authors include Wilfried Vandervorst, Olivier Richard, Matty R. Caymax, Marc Heyns, Paola Favia, Roger Loo, Thierry S. Conard, Małgorzata Jurczak, Karen Maex and Umberto Celano. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Microelectronic Engineering, Journal of The Electrochemical Society and Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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About Hugo Bender

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